INFRA-RED Item No.: 126284 1. This specification applies to GaAlAs / GaAlAs Chips (substrate removed) 2. Structure 2.1 Mesa structure 2.2 Electrodes 3. Outlines (dimensions in microns) p-side (anode) n-side (cathode) Au alloy Au alloy p-Electrode p-Epitaxy GaAlAs 120 365 180 typ. Active Layer n-Epitaxy GaAlAs n-Electrode 365 Wire bond contact can also be square 4. Electrical and optical characteristics (T=25°C) Parameter Symbol Conditions min Forward voltage Reverse voltage VF VR IF = 20 mA IR = 10 µA 5 output Power * Φe IF = 20 mA 3,7 Switching time tr, tf IF = 20 mA Peak wavelength IF = 20 mA λP Power measurement at OSA on gold plate 5. typ max Unit 1,35 1,60 V V 4,5 mW 20 870 ns nm Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. Φe typ min max Quantity © 2004 OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 [email protected]