INFRA-RED Item No.: 131234 1. This specification applies to GaAs / GaAs LED Chips with GaAlAs window - layer 2. Structure 2.1 Mesa structure 2.2 Electrodes 3. Outlines (dimensions in microns) p-side (anode) n-side (cathode) Au alloy Au alloy p-Electrode p-GaAlAs p-Epitaxy GaAs 120 365 280 typ. n-Epitaxy GaAs n-Substrate GaAs 365 n-Electrode Wire bond contacts can also have a spider shape 4. Electrical and optical characteristics (T=25°C) Parameter Symbol Forward voltage Reverse current Conditions min max IF = 20 mA 1,20 1,40 IR = 5 V 10 IF = 20 mA 2,0 2,4 output Power * Φe IF = 50 mA 5,0 6,0 Switching time tr, tf IF = 20 mA 500 Peak wavelength IF = 20 mA 950 λP * On request, wafers will be delivered according to output power classes Power measurement at OSA on gold plate 5. VF IR typ Unit V µA mW ns nm Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. Φe typ min max Quantity © 2004 OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 [email protected]