FDMA1027PT tm Dual P-Channel PowerTrench® MOSFET –20 V, –3 A, 120 mΩ Features General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. Max rDS(on) = 120 mΩ at VGS = -4.5 V, ID = -3.0 A Max rDS(on) = 160 mΩ at VGS = -2.5 V, ID = -2.5 A Max rDS(on) = 240 mΩ at VGS = -1.8 V, ID = -1.0 A Low profile - 0.55 mm maximum - in the new package MicroFET 2x2 Thin The MicroFET 2x2 Thin package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications. RoHS Compliant Applications Battery management Load switch Battery protection 1 6 G1 2 5 G2 D2 3 3 G2 S1 4 S2 4 D1 D2 2 D1 D2 5 G1 1 S1 6 PIN 1 D1 S2 MicroFET 2X2 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage ID Drain Current -Continuous TA = 25 °C (Note 1a) -Pulsed PD TJ, TSTG Ratings -20 Units V ±8 V -3 -6 Power Dissipation for Single Operation TA = 25 °C (Note 1a) 1.4 Power Dissipation for Single Operation TA = 25 °C (Note 1b) 0.7 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Single Operation) (Note 1a) 86 RθJA Thermal Resistance, Junction to Ambient (Single Operation) (Note 1b) 173 RθJA Thermal Resistance, Junction to Ambient (Dual Operation) 69 RθJA Thermal Resistance, Junction to Ambient (Dual Operation) 151 °C/W Package Marking and Ordering Information Device Marking 27 Device FDMA1027PT ©2008 Fairchild Semiconductor Corporation FDMA1027PT Rev.B1 Package MicroFET 2x2 Thin 1 Reel Size 7 ’’ Tape Width 8 mm Quantity 3000 units www.fairchildsemi.com FDMA1027PT Dual P-Channel PowerTrench® MOSFET September 2008 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 µA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V -20 V -12 mV/°C -1 µA ±100 nA -1.3 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250 µA, referenced to 25 °C rDS(on) Drain to Source On Resistance -0.4 -0.7 2 mV/°C VGS = -4.5 V, ID = -3.0 A 90 120 VGS = -2.5 V, ID = -2.5 A 120 160 VGS = -1.8 V, ID = -1.0 A 172 240 VGS = -4.5 V, ID = -3.0 A , TJ = 125 °C 118 160 ID(on) On to State Drain Current VGS = -4.5 V, VDS = -5 V gFS Forward Transconductance VDS = -5 V, ID = -3.0 A -20 mΩ A 7 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -10 V, VGS = 0 V, f = 1 MHz 435 pF 80 pF 45 pF Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = -10 V, ID = -1.0 A VGS = -4.5 V, RGEN = 6 Ω VDD = -10 V, ID = -3.0 A VGS = -4.5 V 9 18 ns 11 19 ns 15 27 ns 6 12 ns 4 6 nC 0.8 nC 0.9 nC Drain-Source Diode Characteristics IS Maximum continuous Drain-Source Diode Forward Current VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -1.1 A -1.1 (Note 2) IF = -3.0 A, di/dt = 100 A/µs -0.8 -1.2 A V 17 ns 6 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 86 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 173 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. ©2008 Fairchild Semiconductor Corporation FDMA1027PT Rev.B1 2 www.fairchildsemi.com FDMA1027PT Dual P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 6 3.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS = -4.5 V 5 VGS = -2 V VGS = -3.5 V 4 3 VGS = -1.8 V VGS = -3 V VGS = -2.5 V 2 1 PULSE DURATION = 300 µs DUTY CYCLE = 2% MAX VGS = -1.5 V 0 0 0.5 1.0 1.5 2.0 2.5 PULSE DURATION = 300 µs DUTY CYCLE = 2%MAX 2.5 VGS = -1.5 V VGS = -1.8 V 2.0 VGS = -2.5 V 1.5 1.0 0 VGS = -4.5 V 1 2 3 4 5 6 -ID, DRAIN CURRENT (A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage Figure 1. On Region Characteristics 1.4 0.28 ID = -3 A VGS = -4.5 V rDS(on), DRAIN TO 1.3 1.2 1.1 1.0 0.9 SOURCE ON-RESISTANCE (Ω) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -3.5 V VGS = -3 V 0.5 -VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 300 µs DUTY CYCLE = 2% MAX 0.24 ID = -1.5 A 0.20 0.16 TJ = 125 oC 0.12 0.08 TJ = 25 oC 0.8 -50 -25 0 25 50 75 100 125 0.04 150 0 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage Figure 3. Normalized On Resistance vs Junction Temperature 10 6 PULSE DURATION = 300 µs DUTY CYCLE = 2% MAX 5 -IS, REVERSE DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = -2 V VDS = -5 V 4 3 2 TJ = 125 oC TJ = 25 oC 1 TJ = -55 oC 0 VGS = 0 V 1 TJ = 125 oC 0.1 TJ = 25 oC 0.01 TJ = -55 oC 0.001 0.0001 0 0.5 1.0 1.5 2.0 2.5 0 Figure 5. Transfer Characteristics ©2008 Fairchild Semiconductor Corporation FDMA1027PT Rev.B1 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMA1027PT Dual P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE (V) 5 700 ID = -3 A 600 4 CAPACITANCE (pF) VDD = -5 V 3 VDD = -10 V 2 VDD = -15 V 1 500 Ciss 400 300 200 100 0 0 1 2 3 4 0 0 5 Crss 4 8 12 16 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 100 1000 P(PK), PEAK TRANSIENT POWER (W) -ID, DRAIN CURRENT (A) f = 1 MHz VGS = 0 V Coss THIS AREA IS LIMITED BY rDS(on) 10 100 us 1 ms 1 10 ms SINGLE PULSE TJ = MAX RATED 0.1 100 ms 1s 10 s DC RθJA = 173 oC/W TA = 25 oC 0.01 0.1 1 10 100 100 VGS = -10 V SINGLE PULSE RθJA = 173 oC/W 10 TA = 25 oC 1 0.2 -4 10 -3 10 -VDS, DRAIN to SOURCE VOLTAGE (V) -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 9. Forward Bias Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 173 C/W 0.01 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 11. Junction-to-Ambient Transient Thermal Response Curve ©2008 Fairchild Semiconductor Corporation FDMA1027PT Rev.B1 4 www.fairchildsemi.com FDMA1027PT Dual P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMA1027PT Dual P-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2008 Fairchild Semiconductor Corporation FDMA1027PT Rev.B1 5 www.fairchildsemi.com Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ ™ TinyPower™ Saving our world, 1mW /W /kW at a time™ TinyPWM™ SmartMax™ TinyWire™ SMART START™ µSerDes™ SPM® STEALTH™ SuperFET™ UHC® SuperSOT™-3 Ultra FRFET™ SuperSOT™-6 UniFET™ SuperSOT™-8 VCX™ SupreMOS™ VisualMax™ SyncFET™ ® ® tm PDP SPM™ Power-SPM™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I36 ©2008 Fairchild Semiconductor Corporation FDMA1027PT Rev.B1 6 www.fairchildsemi.com FDMA1027PT Dual P-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.