FAIRCHILD FDMA7628

Single N-Channel 1.5 V Specified PowerTrench® MOSFET
20 V, 9.4 A, 14.5 mΩ
Features
General Description
„ Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 9.4 A
This Single N-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench® process to
optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET
leadframe.
„ Max rDS(on) = 18.2 mΩ at VGS = 2.5 V, ID = 8.3 A
„ Max rDS(on) = 23.3 mΩ at VGS = 1.8 V, ID = 7.3 A
„ Max rDS(on) = 32.3 mΩ at VGS = 1.5 V, ID = 6.2 A
„ Low Profile-0.8 mm maximum in the new package MicroFET
2x2 mm
Applications
„ Li-lon Battery Pack
„ RoHS Compliant
„ DC-DC Buck Converters
Pin 1
D
D
Drain
G
Bottom Drain Contact
D
D
D
D
G
S
Source
D
D
S
MicroFET 2X2 (Bottom View)
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
-Continuous
ID
TA = 25 °C
(Note 1a)
-Pulsed
PD
TJ, TSTG
Ratings
20
Units
V
±8
V
9.4
54
Power Dissipation
TA = 25 °C
(Note 1a)
1.9
Power Dissipation
TA = 25 °C
(Note 1b)
0.7
Operating and Storage Junction Temperature Range
-55 to +150
A
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
65
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
180
°C/W
Package Marking and Ordering Information
Device Marking
104
Device
FDMA7628
©2012 Fairchild Semiconductor Corporation
FDMA7628 Rev.C
Package
MicroFET 2X2
1
Reel Size
7 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMA7628 Single N-Channel 1.5 V Specified PowerTrench® MOSFET
May 2012
FDMA7628
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 16 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±8 V, VDS = 0 V
±100
nA
1.0
V
20
V
15
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
0.4
0.6
-3
mV/°C
VGS = 4.5 V, ID = 9.4 A
11.3
14.5
VGS = 2.5 V, ID = 8.3 A
12.7
18.2
VGS = 1.8 V, ID = 7.3 A
15.0
23.3
VGS = 1.5 V, ID = 6.2 A
18.3
32.3
VGS = 4.5 V, ID = 9.4 A,
TJ = 125 °C
14.7
18.3
VDD = 5 V, ID = 9.4 A
56
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 10 V, VGS = 0 V,
f = 1 MHz
1260
1680
pF
180
240
pF
122
185
pF
Ω
1.9
Switching Characteristics
td(on)
Turn-On Delay Time
9
17
ns
tr
Rise Time
6
11
ns
td(off)
Turn-Off Delay Time
37
58
ns
tf
Fall Time
6
11
ns
Qg
VDD = 10 V, ID = 9.4 A,
VGS = 4.5 V, RGEN = 6 Ω
Total Gate Charge
VGS = 0 V to 4.5 V
17.5
nC
Total Gate Charge
VGS = 0 V to 2.5 V
10.0
nC
Total Gate Charge
VGS = 0 V to 1.8 V VDD = 10 V,
VGS = 0 V to 1.5 V ID = 9.4 A
7.4
nC
Total Gate Charge
6.2
nC
Qgs
Gate to Source Charge
1.7
nC
Qgd
Gate to Drain “Miller” Charge
2.7
nC
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
©2012 Fairchild Semiconductor Corporation
FDMA7628 Rev.C
VGS = 0 V, IS = 2.0 A
2.0
(Note 2)
IF = 9.4 A, di/dt = 100 A/μs
2
A
0.63
1.2
V
16
29
ns
5
10
nC
www.fairchildsemi.com
FDMA7628 Single N-Channel 1.5 V Specified PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
a.65 °C/W when mounted
on a 1 in2 pad of 2 oz copper.
b. 180 °C/W when mounted on a
minimum pad of 2 oz copper.
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
©2012 Fairchild Semiconductor Corporation
FDMA7628 Rev.C
3
www.fairchildsemi.com
FDMA7628 Single N-Channel 1.5 V Specified PowerTrench® MOSFET
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by
the user's board design.
TJ = 25 °C unless otherwise noted
4
ID, DRAIN CURRENT (A)
VGS = 4.5 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
54
VGS = 1.8 V
45
36
VGS = 2.5 V
VGS = 1.5 V
27
18
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
9
VGS = 1.2 V
VGS = 1.2 V
VGS = 1.5 V
3
VGS = 1.8 V
2
VGS = 2.5 V
1
0
0
0
0.5
1.0
1.5
2.0
2.5
0
3.0
9
18
Figure 1. On Region Characteristics
60
rDS(on), DRAIN TO
1.2
1.0
0.8
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID = 9.4 A
VGS = 4.5 V
-50
45
54
50
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
40
30
TJ = 125 oC
20
10
TJ = 25 oC
1.8
2.7
3.6
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
100
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
IS, REVERSE DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
45
ID = 9.4 A
0
0.9
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
54
36
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
0.6
-75
27
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.4
VGS = 4.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VDS = 5 V
36
27
18
TJ = 25 oC
TJ = 125 oC
9
TJ = -55 oC
0
0.5
1.0
1.5
2.0
10
TJ = 125 oC
1
TJ = 25 oC
0.1
0.01
TJ = -55 oC
0.001
0.0
2.5
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
©2012 Fairchild Semiconductor Corporation
FDMA7628 Rev.C
VGS = 0 V
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
4
www.fairchildsemi.com
FDMA7628 Single N-Channel 1.5 V Specified PowerTrench® MOSFET
Typical Characteristics
TJ = 25 °C unless otherwise noted
5000
ID = 9.4 A
Ciss
3.6
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
4.5
VDD = 8 V
2.7
VDD = 10 V
1.8
VDD = 12 V
1000
Coss
100
Crss
0.9
f = 1 MHz
VGS = 0 V
0.0
0
3
6
9
12
15
10
0.1
18
1
Figure 7. Gate Charge Characteristics
20
Figure 8. Capacitance vs Drain
to Source Voltage
1000
P(PK), PEAK TRANSIENT POWER (W)
100
ID, DRAIN CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
100 us
10
1 ms
1
10 ms
THIS AREA IS
LIMITED BY rDS(on)
100 ms
SINGLE PULSE
TJ = MAX RATED
0.1
1s
10 s
DC
RθJA = 180 oC/W
TA = 25 oC
0.01
0.01
0.1
1
10
100
SINGLE PULSE
RθJA = 180 oC/W
100
TA = 25 oC
10
1
0.1
-4
10
-3
10
-2
10
-1
10
1
100
10
1000
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum
Power Dissipation
Figure 9. Forward Bias Safe
Operating Area
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
0.001
-4
10
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 180 C/W
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 11. Junction-to-Ambient Transient Thermal Response Curve
©2012 Fairchild Semiconductor Corporation
FDMA7628 Rev.C
5
www.fairchildsemi.com
FDMA7628 Single N-Channel 1.5 V Specified PowerTrench® MOSFET
Typical Characteristics
2.00
0.15 C
(0.20)
A
1.00
B
2X
6
No Traces or Vias
Allowed in this Area
4
1.35
1.05
2.00
2.30
(0.48)
0.15 C
PIN #1 LOCATION
1
2X
TOP VIEW
3
0.40 TYP
0.65 TYP
RECOMMENDED LAND PATTERN OPT 1
0.8 MAX
0.10 C
(0.20)
0.08 C
0.05
0.00
C
SIDE VIEW
SEATING
P LANE
(0.15)
(0.45)
(0.50)
(0.30)
1.00
0.80
1
PIN #1 IDENT
6X 0.33
0.20
(0.20)
1.00
3
0.66
0.56
6
1.05
0.95
(0.50)
6
4
0.65
0.10
0.05
1.35
0.66
2.30
1.05
(0.48)
0.35 6X
0.25
1.30
4
1
C A B
C
0.65 TYP
BOTTOM VIEW
3
0.40 TYP
RECOMMENDED LAND PATTERN OPT 2
A. DOES NOT FULLY CONFORM TO JEDEC REGISTRATION
MO-229 DATED AUG/2003
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 1994
D. DRAWING FILENAME: MKT-MLP06Prev1.
©2012 Fairchild Semiconductor Corporation
FDMA7628 Rev.C
6
www.fairchildsemi.com
FDMA7628 Single N-Channel 1.5 V Specified PowerTrench® MOSFET
Dimensional Outline and Pad Layout
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
©2012 Fairchild Semiconductor Corporation
FDMA7628 Rev.C
7
www.fairchildsemi.com
FDMA7628 Single N-Channel 1.5 V Specified PowerTrench® MOSFET
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
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