Single N-Channel 1.5 V Specified PowerTrench® MOSFET 20 V, 9.4 A, 14.5 mΩ Features General Description Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 9.4 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe. Max rDS(on) = 18.2 mΩ at VGS = 2.5 V, ID = 8.3 A Max rDS(on) = 23.3 mΩ at VGS = 1.8 V, ID = 7.3 A Max rDS(on) = 32.3 mΩ at VGS = 1.5 V, ID = 6.2 A Low Profile-0.8 mm maximum in the new package MicroFET 2x2 mm Applications Li-lon Battery Pack RoHS Compliant DC-DC Buck Converters Pin 1 D D Drain G Bottom Drain Contact D D D D G S Source D D S MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage -Continuous ID TA = 25 °C (Note 1a) -Pulsed PD TJ, TSTG Ratings 20 Units V ±8 V 9.4 54 Power Dissipation TA = 25 °C (Note 1a) 1.9 Power Dissipation TA = 25 °C (Note 1b) 0.7 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 65 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 180 °C/W Package Marking and Ordering Information Device Marking 104 Device FDMA7628 ©2012 Fairchild Semiconductor Corporation FDMA7628 Rev.C Package MicroFET 2X2 1 Reel Size 7 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMA7628 Single N-Channel 1.5 V Specified PowerTrench® MOSFET May 2012 FDMA7628 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V ±100 nA 1.0 V 20 V 15 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance 0.4 0.6 -3 mV/°C VGS = 4.5 V, ID = 9.4 A 11.3 14.5 VGS = 2.5 V, ID = 8.3 A 12.7 18.2 VGS = 1.8 V, ID = 7.3 A 15.0 23.3 VGS = 1.5 V, ID = 6.2 A 18.3 32.3 VGS = 4.5 V, ID = 9.4 A, TJ = 125 °C 14.7 18.3 VDD = 5 V, ID = 9.4 A 56 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 10 V, VGS = 0 V, f = 1 MHz 1260 1680 pF 180 240 pF 122 185 pF Ω 1.9 Switching Characteristics td(on) Turn-On Delay Time 9 17 ns tr Rise Time 6 11 ns td(off) Turn-Off Delay Time 37 58 ns tf Fall Time 6 11 ns Qg VDD = 10 V, ID = 9.4 A, VGS = 4.5 V, RGEN = 6 Ω Total Gate Charge VGS = 0 V to 4.5 V 17.5 nC Total Gate Charge VGS = 0 V to 2.5 V 10.0 nC Total Gate Charge VGS = 0 V to 1.8 V VDD = 10 V, VGS = 0 V to 1.5 V ID = 9.4 A 7.4 nC Total Gate Charge 6.2 nC Qgs Gate to Source Charge 1.7 nC Qgd Gate to Drain “Miller” Charge 2.7 nC Drain-Source Diode Characteristics IS Maximum Continuous Drain-Source Diode Forward Current VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ©2012 Fairchild Semiconductor Corporation FDMA7628 Rev.C VGS = 0 V, IS = 2.0 A 2.0 (Note 2) IF = 9.4 A, di/dt = 100 A/μs 2 A 0.63 1.2 V 16 29 ns 5 10 nC www.fairchildsemi.com FDMA7628 Single N-Channel 1.5 V Specified PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted a.65 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 180 °C/W when mounted on a minimum pad of 2 oz copper. SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ©2012 Fairchild Semiconductor Corporation FDMA7628 Rev.C 3 www.fairchildsemi.com FDMA7628 Single N-Channel 1.5 V Specified PowerTrench® MOSFET NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. TJ = 25 °C unless otherwise noted 4 ID, DRAIN CURRENT (A) VGS = 4.5 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 54 VGS = 1.8 V 45 36 VGS = 2.5 V VGS = 1.5 V 27 18 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 9 VGS = 1.2 V VGS = 1.2 V VGS = 1.5 V 3 VGS = 1.8 V 2 VGS = 2.5 V 1 0 0 0 0.5 1.0 1.5 2.0 2.5 0 3.0 9 18 Figure 1. On Region Characteristics 60 rDS(on), DRAIN TO 1.2 1.0 0.8 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID = 9.4 A VGS = 4.5 V -50 45 54 50 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 40 30 TJ = 125 oC 20 10 TJ = 25 oC 1.8 2.7 3.6 4.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage 100 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 45 ID = 9.4 A 0 0.9 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On Resistance vs Junction Temperature 54 36 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 0.6 -75 27 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) 1.4 VGS = 4.5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VDS = 5 V 36 27 18 TJ = 25 oC TJ = 125 oC 9 TJ = -55 oC 0 0.5 1.0 1.5 2.0 10 TJ = 125 oC 1 TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.0 2.5 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDMA7628 Rev.C VGS = 0 V Figure 6. Source to Drain Diode Forward Voltage vs Source Current 4 www.fairchildsemi.com FDMA7628 Single N-Channel 1.5 V Specified PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 5000 ID = 9.4 A Ciss 3.6 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 4.5 VDD = 8 V 2.7 VDD = 10 V 1.8 VDD = 12 V 1000 Coss 100 Crss 0.9 f = 1 MHz VGS = 0 V 0.0 0 3 6 9 12 15 10 0.1 18 1 Figure 7. Gate Charge Characteristics 20 Figure 8. Capacitance vs Drain to Source Voltage 1000 P(PK), PEAK TRANSIENT POWER (W) 100 ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 100 us 10 1 ms 1 10 ms THIS AREA IS LIMITED BY rDS(on) 100 ms SINGLE PULSE TJ = MAX RATED 0.1 1s 10 s DC RθJA = 180 oC/W TA = 25 oC 0.01 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 180 oC/W 100 TA = 25 oC 10 1 0.1 -4 10 -3 10 -2 10 -1 10 1 100 10 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation Figure 9. Forward Bias Safe Operating Area 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 0.001 -4 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 180 C/W -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 11. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMA7628 Rev.C 5 www.fairchildsemi.com FDMA7628 Single N-Channel 1.5 V Specified PowerTrench® MOSFET Typical Characteristics 2.00 0.15 C (0.20) A 1.00 B 2X 6 No Traces or Vias Allowed in this Area 4 1.35 1.05 2.00 2.30 (0.48) 0.15 C PIN #1 LOCATION 1 2X TOP VIEW 3 0.40 TYP 0.65 TYP RECOMMENDED LAND PATTERN OPT 1 0.8 MAX 0.10 C (0.20) 0.08 C 0.05 0.00 C SIDE VIEW SEATING P LANE (0.15) (0.45) (0.50) (0.30) 1.00 0.80 1 PIN #1 IDENT 6X 0.33 0.20 (0.20) 1.00 3 0.66 0.56 6 1.05 0.95 (0.50) 6 4 0.65 0.10 0.05 1.35 0.66 2.30 1.05 (0.48) 0.35 6X 0.25 1.30 4 1 C A B C 0.65 TYP BOTTOM VIEW 3 0.40 TYP RECOMMENDED LAND PATTERN OPT 2 A. DOES NOT FULLY CONFORM TO JEDEC REGISTRATION MO-229 DATED AUG/2003 B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994 D. DRAWING FILENAME: MKT-MLP06Prev1. ©2012 Fairchild Semiconductor Corporation FDMA7628 Rev.C 6 www.fairchildsemi.com FDMA7628 Single N-Channel 1.5 V Specified PowerTrench® MOSFET Dimensional Outline and Pad Layout tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Definition Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 ©2012 Fairchild Semiconductor Corporation FDMA7628 Rev.C 7 www.fairchildsemi.com FDMA7628 Single N-Channel 1.5 V Specified PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ F-PFS™ PowerTrench® The Power Franchise® ® PowerXS™ AccuPower™ FRFET® Global Power ResourceSM Programmable Active Droop™ AX-CAP™* Green Bridge™ QFET® BitSiC® TinyBoost™ Build it Now™ QS™ Green FPS™ TinyBuck™ CorePLUS™ Quiet Series™ Green FPS™ e-Series™ TinyCalc™ CorePOWER™ RapidConfigure™ Gmax™ TinyLogic® CROSSVOLT™ GTO™ ™ TINYOPTO™ CTL™ IntelliMAX™ TinyPower™ Saving our world, 1mW/W/kW at a time™ Current Transfer Logic™ ISOPLANAR™ TinyPWM™ DEUXPEED® Marking Small Speakers Sound Louder SignalWise™ TinyWire™ Dual Cool™ SmartMax™ and Better™ TranSiC® EcoSPARK® SMART START™ MegaBuck™ TriFault Detect™ EfficentMax™ Solutions for Your Success™ MICROCOUPLER™ TRUECURRENT®* ESBC™ SPM® MicroFET™ μSerDes™ STEALTH™ MicroPak™ ® SuperFET® MicroPak2™ SuperSOT™-3 MillerDrive™ Fairchild® UHC® SuperSOT™-6 MotionMax™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 Motion-SPM™ FACT Quiet Series™ UniFET™ SupreMOS® mWSaver™ FACT® VCX™ SyncFET™ OptoHiT™ FAST® VisualMax™ Sync-Lock™ OPTOLOGIC® FastvCore™ VoltagePlus™ OPTOPLANAR® ®* FETBench™ XS™ FlashWriter® * ® FPS™