FDME1024NZT Dual N-Channel PowerTrench® MOSFET 20 V, 3.8 A, 66 mΩ Features General Description Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9 A Max rDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5 A Max rDS(on) = 160 mΩ at VGS = 1.5 V, ID = 2.1 A Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications. Free from halogenated compounds and antimony oxides Applications HBM ESD protection level > 1600 V (Note 3) Baseband Switch RoHS Compliant Load Switch D2 G1 S1 D2 Pin 1 D1 S2 G2 D1 BOTTOM TOP MicroFET 1.6x1.6 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID TA = 25 °C (Note 1a) -Pulsed PD TJ, TSTG Ratings 20 Units V ±8 V 3.8 6 Power Dissipation for Single Operation TA = 25 °C (Note 1a) 1.4 Power Dissipation for Single Operation TA = 25 °C (Note 1b) 0.6 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Single Operation) (Note 1a) 90 RθJA Thermal Resistance, Junction to Ambient (Single Operation) (Note 1b) 195 °C/W Package Marking and Ordering Information Device Marking 4T Device FDME1024NZT ©2010 Fairchild Semiconductor Corporation FDME1024NZT Rev.C1 Package MicroFET 1.6x1.6 Thin 1 Reel Size 7 ’’ Tape Width 8 mm Quantity 5000 units www.fairchildsemi.com FDME1024NZT Dual N-Channel PowerTrench® MOSFET July 2010 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V ±10 μA 1.0 V 20 V 16 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C -3 VGS = 4.5 V, ID = 3.4 A 55 VGS = 2.5 V, ID = 2.9 A 68 86 VGS = 1.8 V, ID = 2.5 A 85 113 VGS = 1.5 V, ID = 2.1 A 106 160 VGS = 4.5 V, ID = 3.4 A, TJ = 125 °C 76 112 VDD = 4.5 V, ID = 3.4 A 9 rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance 0.4 0.7 mV/°C 66 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 10 V, VGS = 0 V, f = 1 MHz 225 300 pF 40 55 pF 25 40 pF 4.5 10 ns 2 10 ns 15 27 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω VDD = 10 V, ID = 3.4 A, VGS = 4.5 V 1.7 10 ns 3 4.2 nC 0.4 nC 0.6 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 0.9 A (Note 2) IF = 3.4 A, di/dt = 100 A/μs 0.7 1.2 V 8.5 17 ns 1.4 10 nC NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 90 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 195 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied. FDME1024NZT Rev.C1 2 www.fairchildsemi.com FDME1024NZT Dual N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted VGS = 4.5 V VGS = 3 V VGS = 2.5 V VGS = 1.8 V 4 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 6 VGS = 1.5 V 2 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 0.5 1.0 3.0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 2.5 VGS = 1.5 V 2.0 VGS = 1.8 V 1.5 1.0 VGS = 4.5 V 0.5 1.5 0 2 VDS, DRAIN TO SOURCE VOLTAGE (V) 6 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 300 ID = 3.4 A VGS = 4.5 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 4 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics 6 IS, REVERSE DRAIN CURRENT (A) TJ = 150 oC 2 TJ = 25 oC TJ = -55 oC 1.5 50 TJ = 25 oC 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS = 0 V 1 TJ = 150 oC TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.0 2.0 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics FDME1024NZT Rev.C1 TJ = 125 oC 100 10 VDS = 5 V 1.0 150 Figure 4. On-Resistance vs Gate to Source Voltage 4 0.5 ID = 3.4 A 200 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 250 0 1.0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature ID, DRAIN CURRENT (A) VGS = 3 V VGS = 2.5 V Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDME1024NZT Dual N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 500 ID = 3.4 A Ciss CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 4.5 VDD = 8 V 3.0 VDD = 10 V VDD = 12 V 1.5 100 Coss 0.0 0 1 2 10 0.1 3 1 10 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 10 -1 10 Ig, GATE LEAKAGE CURRENT (A) 100 μs ID, DRAIN CURRENT (A) Crss f = 1 MHz VGS = 0 V 1 ms 1 10 ms THIS AREA IS LIMITED BY rDS(on) 0.1 100 ms SINGLE PULSE TJ = MAX RATED 1s 10 s DC RθJA = 195 oC/W o TA = 25 C 0.01 0.1 1 10 -2 VGS = 0 V 10 -3 10 -4 10 TJ = 125 oC -5 10 -6 10 -7 10 -8 TJ = 25 oC 10 -9 50 10 VDS, DRAIN to SOURCE VOLTAGE (V) 0 3 6 9 12 15 VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area Figure 10. Gate Leakage Current vs Gate to Source Voltage P(PK), PEAK TRANSIENT POWER (W) 100 SINGLE PULSE o RθJA = 195 C/W o TA = 25 C 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (s) Figure 11. Single Pulse Maximum Power Dissipation FDME1024NZT Rev.C1 4 www.fairchildsemi.com FDME1024NZT Dual N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE 0.01 0.005 -4 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 195 C/W -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Junction-to-Ambient Transient Thermal Response Curve FDME1024NZT Rev.C1 5 www.fairchildsemi.com FDME1024NZT Dual N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDME1024NZT Dual N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout FDME1024NZT Rev.C1 6 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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