FDME905PT P-Channel PowerTrench® MOSFET -12 V, -8 A, 22 mΩ Features General Description Max rDS(on) = 22 mΩ at VGS = -4.5 V, ID = -8 A This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. Max rDS(on) = 26 mΩ at VGS = -2.5 V, ID = -7.3 A Max rDS(on) = 97 mΩ at VGS = -1.8 V, ID = -3.8 A The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications. Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin Free from halogenated compounds and antimony oxides RoHS Compliant G Bottom Drain Contact D Pin 1 D S D 1 6 D D 2 5 D G 3 4 S S D D TOP BOTTOM MicroFET 1.6x1.6 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous TA = 25 °C (Note 1a) -Pulsed PD TJ, TSTG Ratings -12 Units V ±8 V -8 -30 Power Dissipation TA = 25 °C (Note 1a) 2.1 Power Dissipation TA = 25 °C (Note 1b) 0.7 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient (Note 1a) 4.5 60 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 175 °C/W Package Marking and Ordering Information Device Marking E95 Device FDME905PT ©2011 Fairchild Semiconductor Corporation FDME905PT Rev.C4 Package MicroFET 1.6x1.6 Thin 1 Reel Size 7 ’’ Tape Width 8 mm Quantity 5000 units www.fairchildsemi.com FDME905PT P-Channel PowerTrench® MOSFET October 2013 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = -9.6 V, VGS = 0 V IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V -12 V -8.7 mV/°C -1 μA ±100 nA -1.0 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C 2.5 rDS(on) Drain to Source On Resistance gFS Forward Transconductance -0.4 -0.7 mV/°C VGS = -4.5 V, ID = -8 A 18 VGS = -2.5 V, ID = -7.3 A 22 22 26 VGS = -1.8 V, ID = -3.8 A 28 97 VGS = -4.5 V, ID = -8 A, TJ = 125 °C 23 32 VDS = -5 V, ID = -8 A 38 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -6 V, VGS = 0 V, f = 1 MHz 1740 2315 pF 350 525 pF 311 465 pF Switching Characteristics td(on) Turn-On Delay Time tr Rise Time VDD = -6 V, ID = -8 A, VGS = -4.5 V, RGEN = 6 Ω 9.5 19 ns 8 16 ns ns td(off) Turn-Off Delay Time 90 144 tf Fall Time 42 67 ns Qg Total Gate Charge 14 20 nC Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = -6 V, ID = -8 A, VGS = -4.5 V 2.4 nC 3 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -8 A (Note 2) -0.8 -1.2 VGS = 0 V, IS = -1.8 A (Note 2) -0.7 -1.2 IF = -8 A, di/dt = 100 A/μs V 17 31 ns 4.5 10 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 60 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 175 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. ©2011 Fairchild Semiconductor Corporation FDME905PT Rev.C4 2 www.fairchildsemi.com FDME905PT P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 3 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 30 -ID, DRAIN CURRENT (A) VGS = -4.5 V VGS = -3 V 20 VGS = -2.5 V VGS = -1.8 V 10 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 0.5 1.0 2 VGS = -1.8 V VGS = -2.5 V 1 VGS = -3 V VGS = -4.5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 1.5 10 20 -ID, DRAIN CURRENT (A) 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 80 ID = -8 A VGS = -4.5 V rDS(on), DRAIN TO 1.3 1.2 1.1 1.0 0.9 0.8 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 60 ID = -8 A 40 TJ = 125 oC 20 TJ = 25 oC 0 1.0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 50 -IS, REVERSE DRAIN CURRENT (A) 30 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX -ID, DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VDS = -5 V 20 TJ = 150 oC 10 TJ = 25 oC TJ = -55 oC 0 0.0 0.5 1.0 1.5 VGS = 0 V 10 1 TJ = 25 oC 0.1 0.01 0.001 0.0 2.0 TJ = 150 oC TJ = -55 oC 0.2 0.4 0.6 0.8 1.0 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2011 Fairchild Semiconductor Corporation FDME905PT Rev.C4 3 1.2 www.fairchildsemi.com FDME905PT P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 3000 ID = -8 A Ciss VDD = -5 V CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE (V) 4.5 3.0 VDD = -6 V VDD = -7 V 1.5 1000 Coss Crss f = 1 MHz VGS = 0 V 0.0 0 4 8 12 100 0.1 16 1 Figure 7. Gate Charge Characteristics 20 Figure 8. Capacitance vs Drain to Source Voltage 100 300 P(PK), PEAK TRANSIENT POWER (W) -ID, DRAIN CURRENT (A) 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 100 μs 10 1 ms 1 10 ms THIS AREA IS LIMITED BY rDS(on) 0.1 100 ms 1s 10 s DC SINGLE PULSE TJ = MAX RATED RθJA = 175 oC/W TA = 25 oC 0.01 0.001 0.1 1 10 SINGLE PULSE o RθJA = 175 C/W 100 o TA = 25 C 10 1 0.5 -4 10 30 -3 10 -2 -1 10 10 1 100 10 1000 t, PULSE WIDTH (s) -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 175 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 11. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDME905PT Rev.C4 4 www.fairchildsemi.com FDME905PT P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDME905PT P-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDME905PT Rev.C4 5 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2011 Fairchild Semiconductor Corporation FDME905PT Rev.C4 6 www.fairchildsemi.com FDME905PT P-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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