Central CZT2955 PNP CZT3055 NPN TM Semiconductor Corp. 2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2955 and CZT3055 types are surface mount epoxy molded complementary silicon transistors manufactured by the epitaxial base process, designed for surface mounted power amplifier applications up to 6.0 amps. MARKING CODE: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCER VCEO 70 V Collector-Emitter Voltage 60 V Emitter-Base Voltage VEBO 7.0 V Collector Current IC 6.0 A Base Current IB PD 3.0 A 2.0 W TJ,Tstg -65 to +150 °C ΘJA 62.5 °C/W Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEO ICEV IEBO BVCER BVCEO VCE=30V VCE=100V, VEB=1.5V VEB=7.0V IC=30mA, RBE=100Ω IC=30mA * VCE(SAT) IC=4.0A, IB=400mA * VBE(ON) VCE=4.0V, IC=4.0A * hFE VCE=4.0V, IC=4.0A * hFE fT VCE=4.0V, IC=6.0A VCE=10V, IC=500mA, f=1.0MHz MAX 700 µA 1.0 mA 5.0 mA 70 V 60 20 UNITS V 1.1 V 1.5 V 70 5.0 2.5 MHz * Pulsed, 2% D.C. R3 (17-June 2004) Central TM CZT2955 PNP CZT3055 NPN Semiconductor Corp. 2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR MARKING CODE: FULL PART NUMBER SYMBOL A B C D E F G H I J K L M DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0° 10° 0° 10° 0.059 0.071 1.50 1.80 0.018 --0.45 --0.000 0.004 0.00 0.10 15° 15° 0.009 0.014 0.23 0.35 0.248 0.264 6.30 6.70 0.114 0.122 2.90 3.10 0.130 0.146 3.30 3.70 0.264 0.287 6.70 7.30 0.024 0.033 0.60 0.85 0.091 2.30 0.181 4.60 SOT-223 (REV: R3) R3 (17-June 2004)