CENTRAL CZT3055NPN

Central
CZT2955 PNP
CZT3055 NPN
TM
Semiconductor Corp.
2.0W SURFACE MOUNT
COMPLEMENTARY SILICON
POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT2955
and CZT3055 types are surface mount epoxy
molded complementary silicon transistors
manufactured by the epitaxial base process,
designed for surface mounted power amplifier
applications up to 6.0 amps.
MARKING CODE: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCER
VCEO
70
V
Collector-Emitter Voltage
60
V
Emitter-Base Voltage
VEBO
7.0
V
Collector Current
IC
6.0
A
Base Current
IB
PD
3.0
A
2.0
W
TJ,Tstg
-65 to +150
°C
ΘJA
62.5
°C/W
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICEO
ICEV
IEBO
BVCER
BVCEO
VCE=30V
VCE=100V, VEB=1.5V
VEB=7.0V
IC=30mA, RBE=100Ω
IC=30mA
* VCE(SAT) IC=4.0A, IB=400mA
* VBE(ON) VCE=4.0V, IC=4.0A
* hFE
VCE=4.0V, IC=4.0A
* hFE
fT
VCE=4.0V, IC=6.0A
VCE=10V, IC=500mA, f=1.0MHz
MAX
700
µA
1.0
mA
5.0
mA
70
V
60
20
UNITS
V
1.1
V
1.5
V
70
5.0
2.5
MHz
* Pulsed, 2% D.C.
R3 (17-June 2004)
Central
TM
CZT2955 PNP
CZT3055 NPN
Semiconductor Corp.
2.0W SURFACE MOUNT
COMPLEMENTARY SILICON
POWER TRANSISTOR
SOT-223 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) BASE
2) COLLECTOR
3) EMITTER
4) COLLECTOR
MARKING CODE:
FULL PART NUMBER
SYMBOL
A
B
C
D
E
F
G
H
I
J
K
L
M
DIMENSIONS
INCHES
MILLIMETERS
MIN
MAX
MIN
MAX
0°
10°
0°
10°
0.059
0.071
1.50
1.80
0.018
--0.45
--0.000
0.004
0.00
0.10
15°
15°
0.009
0.014
0.23
0.35
0.248
0.264
6.30
6.70
0.114
0.122
2.90
3.10
0.130
0.146
3.30
3.70
0.264
0.287
6.70
7.30
0.024
0.033
0.60
0.85
0.091
2.30
0.181
4.60
SOT-223 (REV: R3)
R3 (17-June 2004)