UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15Ω Features Description • RDS(on) = 1.0Ω ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( Typ. 15nC) • Low Crss ( Typ. 6.3pF) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant D D G G S D-PAK FDD Series G D S I-PAK FDU Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage -Continuous (TC = 25oC) Ratings 500 Units V ±30 V 5.5 ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 5.5 A EAR Repetitive Avalanche Energy (Note 1) 8.9 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns -Continuous (TC = 100oC) - Pulsed (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL - Derate above 25oC A 2.4 (Note 1) 22 A (Note 2) 270 mJ 89 W 0.71 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter Ratings RθJC Thermal Resistance, Junction to Case 1.4 RθJA Thermal Resistance, Junction to Ambient 83 Units o C/W *When mounted on the minimum pad size recommended (PCB Mount) ©2007 Fairchild Semiconductor Corporation FDD6N50F / FDU6N50F Rev. A 1 www.fairchildsemi.com FDD6N50F / FDU6N50F N-Channel MOSFET June 2007 Device Marking FDD6N50F Device FDD6N50FTM Package D-PAK Reel Size 380mm Tape Width 16mm Quantity 2500 FDD6N50F FDD6N50FTF D-PAK 380mm 16mm 2000 FDU6N50F FDU6N50FTU I-PAK - - 70 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units ID = 250μA, VGS = 0V, TJ = 25oC 500 - - V ID = 250μA, Referenced to 25oC - 0.15 - V/oC VDS = 500V, VGS = 0V Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current - - 10 VDS = 400V, TC = 125oC - - 100 VGS = ±30V, VDS = 0V - - ±100 μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA 3.0 - 5.0 V Static Drain to Source On Resistance VGS = 10V, ID = 2.75A - 1.0 1.15 Ω gFS Forward Transconductance VDS = 40V, ID = 2.75A - 4.3 - S (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 400V, ID = 6A VGS = 10V (Note 4, 5) - 720 960 pF - 85 115 pF - 6.3 9.5 pF - 15 19.8 nC - 4.4 - nC - 6.1 - nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250V, ID = 6A RG = 25Ω (Note 4, 5) - 17 44 ns - 28.3 66.6 ns - 33.4 76.7 ns - 20.5 51 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 5.5 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 22 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 5.5A - - 1.5 V trr Reverse Recovery Time - 85 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 5.5A dIF/dt = 100A/μs - 0.15 - μC (Note 4) Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 16mH, IAS = 5.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 5.5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDD6N50F / FDU6N50F Rev. A 2 www.fairchildsemi.com FDD6N50F / FDU6N50F N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 1. On-Region Characteristics 28 20 VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 ID,Drain Current[A] 10 ID,Drain Current[A] Figure 2. Transfer Characteristics 1 o o 150 C 25 C *Notes: 1. 250μs Pulse Test 0.1 *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 2. TC = 25 C 0.04 0.1 1 VDS,Drain-Source Voltage[V] 10 1 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 6 7 8 9 VGS,Gate-Source Voltage[V] IS, Reverse Drain Current [A] 100 1.8 VGS = 10V 1.2 VGS = 20V o 150 C 10 o 25 C 1 *Notes: 1. VGS = 0V o 0.6 *Note: TJ = 25 C 0 4 8 12 ID, Drain Current [A] 0.1 0.0 16 Figure 5. Capacitance Characteristics 2.0 10 Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VGS, Gate-Source Voltage [V] Coss 1200 *Note: 1. VGS = 0V 2. f = 1MHz 900 600 Crss 300 0 0.1 2. 250μs Pulse Test 0.5 1.0 1.5 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 1500 Capacitances [pF] 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 2.4 RDS(ON) [Ω], Drain-Source On-Resistance 5 1 10 VDS, Drain-Source Voltage [V] FDD6N50F / FDU6N50F Rev. A 6 4 2 0 30 3 VDS = 100V VDS = 250V VDS = 400V 8 *Note: ID = 6A 0 4 8 12 Qg, Total Gate Charge [nC] 16 www.fairchildsemi.com FDD6N50F / FDU6N50F N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. Maximum Safe Operating Area 50 ID, Drain Current [A] BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 30μs 100μs 10 1ms 10ms 1 Operation in This Area is Limited by R DS(on) 0.1 0.9 DC *Notes: o *Notes: 1. VGS = 0V 2. ID = 250μA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 1. TC = 25 C o 0.01 200 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 9. Maximum Drain Current vs. Case Temperature 6.0 ID, Drain Current [A] 4.8 3.6 2.4 1.2 0.0 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 10. Transient Thermal Response Curve Thermal Response [ZθJC] 3 1 0.5 0.2 0.1 0.1 0.02 0.01 0.01 t1 t2 *Notes: Single pulse 1E-3 -5 10 FDD6N50F / FDU6N50F Rev. A PDM 0.05 o 1. ZθJC(t) = 1.4 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 0 10 1 10 www.fairchildsemi.com FDD6N50F / FDU6N50F N-Channel MOSFET Typical Performance Characteristics (Continued) FDD6N50F / FDU6N50F N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDD6N50F / FDU6N50F Rev. A 5 www.fairchildsemi.com FDD6N50F / FDU6N50F N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDD6N50F / FDU6N50F Rev. A 6 www.fairchildsemi.com FDD6N50F / FDU6N50F N-Channel MOSFET Mechanical Dimensions D-PAK Dimensions in Millimeters FDD6N50F / FDU6N50F Rev. A 7 www.fairchildsemi.com FDD6N50F / FDU6N50F N-Channel MOSFET Mechanical Dimensions I-PAK Dimensions in Millimeters FDD6N50F / FDU6N50F Rev. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Rev. I29 FDD6N50F / FDU6N50F Rev. A 9 www.fairchildsemi.com FDD6N50F / FDU6N50F N-Channel MOSFET tm