BC 327 / BC 328 PNP General Purpose Transistors Si-Epitaxial PlanarTransistors PNP Power dissipation – Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92 (10D3) Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard Pinning 1=C 2=B 3=E Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BC 327 BC 328 Collector-Emitter-voltage B open - VCE0 45 V 25 V Collector-Emitter-voltage B shorted - VCES 50 V 30 V Emitter-Base-voltage C open - VEB0 5V Power dissipation – Verlustleistung Ptot 625 mW 1) Collector current – Kollektorstrom (DC) - IC 800 mA Peak Coll. current – Kollektor-Spitzenstrom - ICM 1A Base current – Basisstrom - IB 100 mA Junction temp. – Sperrschichttemperatur Tj 150/C Storage temperature – Lagerungstemperatur TS - 65…+ 150/C Characteristics, Tj = 25/C Kennwerte, Tj = 25/C Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis - VCE = 1 V, - IC = 100 mA - VCE = 1 V, - IC = 300 mA 1 Group -16 hFE 100 160 250 Group -25 hFE 160 250 400 Group -40 hFE 250 400 630 Group -16 hFE 60 130 – Group -25 hFE 100 200 – Group -40 hFE 170 320 – ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 2 01.11.2003 General Purpose Transistors BC 327 / BC 328 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Collector-Emitter cutoff current – Kollektorreststrom - VCE = 45 V BC 327 - ICES – 2 nA 100 nA - VCE = 25 V BC 328 - ICES – 2 nA 100 nA - VCE = 45 V, Tj = 125/C BC 327 - ICES – – 10 :A - VCE = 25 V, Tj = 125/C BC 328 - ICES – – 10 :A Collector-Emitter breakdown voltage Collector-Emitter Durchbruchspannung - IC = 10 mA - IC = 0.1 mA BC 327 - V(BR)CES 20 V – – BC 328 - V(BR)CES 45 V – – BC 327 - V(BR)CES 30 V – – BC 328 - V(BR)CES 50 V – – - V(BR)EB0 5V – – - VCEsat – – 0.7 V - VBE – – 1.2 V fT – 100 MHz – – 12 pF – Emitter-Base breakdown voltage Emitter-Basis-Durchbruchspannung - IE = 0.1 mA Collector saturation volt. – Kollektor-Sättigungsspannung - IC = 500 mA, - IB = 50 mA Base-Emitter voltage – Basis-Emitter-Spannung - VCE = 1 V, - IC = 300 mA Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 50 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren Available current gain groups per type Lieferbare Stromverstärkungsgruppen pro Typ 200 K/W 1) RthA BC 337 / BC 338 BC 327-16 BC 328-16 BC 327-25 BC 328-25 BC327-40 BC328-40 1 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 01.11.2003 3