2N5550 / 2N5551 NPN NPN

2N5550 / 2N5551
2N5550 / 2N5551
General Purpose Si-Epitaxial Planar Transistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
NPN
NPN
Version 2006-06-17
Power dissipation
Verlustleistung
18
9
16
CBE
2 x 2.54
Dimensions - Maße [mm]
625 mW
Plastic case
Kunststoffgehäuse
TO-92
(10D3)
Weight approx. – Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
2N5550
2N5551
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
B open
VCEO
140 V
160 V
Collector-Base-voltage – Kollektor-Basis-Spannung
E open
VCBO
160 V
180 V
Emitter-Base-voltage – Emitter-Basis-Spannung
C open
VEBO
6V
Power dissipation – Verlustleistung
Ptot
625 mW 1)
Collector current – Kollektorstrom (dc)
IC
600 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis 2)
VCE = 5 V, IC = 1 mA
VCE = 5 V, IC = 10 mA
VCE = 5 V, IC = 50 mA
2N5550
hFE
hFE
hFE
60
60
20
–
–
–
–
250
–
VCE = 5 V, IC = 1 mA
VCE = 5 V, IC = 10 mA
VCE = 5 V, IC = 50 mA
2N5551
hFE
hFE
hFE
80
80
30
–
–
–
–
250
–
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
1
2
IC = 10 mA, IB = 1 mA
2N5550
2N5551
VCEsat
VCEsat
–
–
–
–
0.15 V
0.15 V
IC = 50 mA, IB = 5 mA
2N5550
2N5551
VCEsat
VCEsat
–
–
–
–
0.25 V
0.20 V
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
2N5550 / 2N5551
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
2N5550
VBEsat
VBEsat
–
–
–
–
1.0 V
1.2 V
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
2N5551
VBEsat
VBEsat
–
–
–
–
1.0 V
1.0 V
ICBO
ICBO
–
–
–
–
100 nA
50 nA
IEBO
–
–
50 nA
fT
100 MHz
–
300 MHz
CCBO
–
–
6 pF
F
F
–
–
–
–
10 dB
8 dB
Collector-Base cutoff current – Kollektor-Base-Reststrom
VCB = 100 V, (E open)
VCB = 120 V, (E open)
2N5550
2N5551
Emitter-Base cutoff current – Emitter-Basis-Reststrom
VEB = 4 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
IC = 10 mA, VCE = 10 V, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz
Noise figure – Rauschzahl
VCE = 5 V, IC = 200 µA, RG = 2 kΩ,
f = 30 Hz ... 15 kHz
2N5550
2N5551
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 200 K/W 1)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
2N5400 / 2N5401
120
[%]
100
80
60
40
20
Ptot
0
0
TA
50
100
150
[°C]
Power dissipation versus ambient temperature 1)
Verlustleistung in Abh. von d. Umgebungstemp.1)
1
2
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
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© Diotec Semiconductor AG