TIP31 ... TIP31C TIP31 ... TIP31C General Purpose Silicon Power Transistors Silizium Leistungs-Transistoren für universellen Einsatz NPN NPN Version 2006-07-12 Max. power dissipation with cooling Max. Verlustleistung mit Kühlung 4 3 3.8 Type Typ 13.2 1 2 3 3.4 15.7 10±0.2 1.5 0.9 2.54 Dimensions - Maße [mm] 1=B 2/4 = C 3=E 40 W Collector current Kollektorstrom 3A Plastic case Kunststoffgehäuse TO-220AB Weight approx. Gewicht ca. 2.2 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) TIP31 TIP31A TIP31B TIP31C Collector-Emitter-voltage B open VCEO 40 V 60 V 80 V 100 V Collector-Emitter-voltage E open VCES 40 V 60 V 80 V 100 V Emitter-Base-voltage C open VEBO 5V TA = 25°C TC = 25°C Ptot Ptot 2 W 1) 40 W Collector current – Kollektorstrom (dc) IC 3A Peak Collector current – Kollektor-Spitzenstrom ICM 5A Base current – Basisstrom (dc) IB 1A Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Power dissipation – Verlustleistung without cooling – ohne Kühlung with cooling – mit Kühlung Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. 25 10 – – – 50 VCEsat – – 1.2 V VBE – – 1.8 V DC current gain – Kollektor-Basis-Stromverhältnis ) 2 VCE = 4 V, IC = 1 A VCE = 4 V, IC = 3 A hFE hFE Collector-Emitter saturation volt. – Kollektor-Emitter-Sättigungsspg. 2) IC = 3 A, IB = 375 mA Base-Emitter voltage – Basis-Emitter-Spannung ) 2 VCE = 4 V, IC = 3 A 1 2 Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gültig wenn die Anschlussdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 TIP31 ... TIP31C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom VCE = 30 V (B open) TIP31 TIP31A ICE0 ICE0 – – – – 300 nA 300 nA VCE = 60 V (B open) TIP31B TIP31C ICE0 ICE0 – – – – 300 nA 300 nA VCE = 40 V (B-E short) VCE = 60 V (B-E short) TIP31 TIP31A ICES ICES – – – – 200 nA 200 nA VCE = 80 V (B-E short) VCE = 100 V (B-E short) TIP31B TIP31C ICES ICES – – – – 200 nA 200 nA IEB0 – – 1 mA fT 3 MHz – – hfe hfe 20 3 – – – – ton – 300 ns – toff – 1 µs – Emitter-Base cutoff current VEB = 5 V, (C open) Gain-Bandwidth Product – Transitfrequenz VCE = 10 V, IC = 0.5 A, f = 1 MHz Small signal current gain – Kleinsignal-Stromverstärkung VCE = 10 V, IC = 0.5 A, f = 1 kHz VCE = 10 V, IC = 0.5 A, f = 1 MHz Switching times – Schaltzeiten (between 10% and 90% levels) turn-on time turn-off time ICon = 1 A IBon = - IBoff = 100 mA Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 63 K/W 1) Thermal resistance junction to case Wärmewiderstand Sperrschicht – Gehäuse RthC < 3 K/W Admissible torque for mounting Zulässiges Anzugsdrehmoment M4 9 ± 10% lb.in. 1 ± 10% Nm Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren 1 2 TIP32 ... TIP32C Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gültig wenn die Anschlussdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden http://www.diotec.com/ © Diotec Semiconductor AG