DIOTEC TIP31_07

TIP31 ... TIP31C
TIP31 ... TIP31C
General Purpose Silicon Power Transistors
Silizium Leistungs-Transistoren für universellen Einsatz
NPN
NPN
Version 2006-07-12
Max. power dissipation with cooling
Max. Verlustleistung mit Kühlung
4
3
3.8
Type
Typ
13.2
1 2 3
3.4
15.7
10±0.2
1.5
0.9
2.54
Dimensions - Maße [mm]
1=B
2/4 = C
3=E
40 W
Collector current
Kollektorstrom
3A
Plastic case
Kunststoffgehäuse
TO-220AB
Weight approx.
Gewicht ca.
2.2 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging in tubes
Standard Lieferform in Stangen
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
TIP31
TIP31A
TIP31B
TIP31C
Collector-Emitter-voltage
B open
VCEO
40 V
60 V
80 V
100 V
Collector-Emitter-voltage
E open
VCES
40 V
60 V
80 V
100 V
Emitter-Base-voltage
C open
VEBO
5V
TA = 25°C
TC = 25°C
Ptot
Ptot
2 W 1)
40 W
Collector current – Kollektorstrom (dc)
IC
3A
Peak Collector current – Kollektor-Spitzenstrom
ICM
5A
Base current – Basisstrom (dc)
IB
1A
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Power dissipation – Verlustleistung
without cooling – ohne Kühlung
with cooling – mit Kühlung
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
25
10
–
–
–
50
VCEsat
–
–
1.2 V
VBE
–
–
1.8 V
DC current gain – Kollektor-Basis-Stromverhältnis )
2
VCE = 4 V, IC = 1 A
VCE = 4 V, IC = 3 A
hFE
hFE
Collector-Emitter saturation volt. – Kollektor-Emitter-Sättigungsspg. 2)
IC = 3 A, IB = 375 mA
Base-Emitter voltage – Basis-Emitter-Spannung )
2
VCE = 4 V, IC = 3 A
1
2
Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig wenn die Anschlussdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
TIP31 ... TIP31C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
VCE = 30 V (B open)
TIP31
TIP31A
ICE0
ICE0
–
–
–
–
300 nA
300 nA
VCE = 60 V (B open)
TIP31B
TIP31C
ICE0
ICE0
–
–
–
–
300 nA
300 nA
VCE = 40 V (B-E short)
VCE = 60 V (B-E short)
TIP31
TIP31A
ICES
ICES
–
–
–
–
200 nA
200 nA
VCE = 80 V (B-E short)
VCE = 100 V (B-E short)
TIP31B
TIP31C
ICES
ICES
–
–
–
–
200 nA
200 nA
IEB0
–
–
1 mA
fT
3 MHz
–
–
hfe
hfe
20
3
–
–
–
–
ton
–
300 ns
–
toff
–
1 µs
–
Emitter-Base cutoff current
VEB = 5 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
VCE = 10 V, IC = 0.5 A, f = 1 MHz
Small signal current gain – Kleinsignal-Stromverstärkung
VCE = 10 V, IC = 0.5 A, f = 1 kHz
VCE = 10 V, IC = 0.5 A, f = 1 MHz
Switching times – Schaltzeiten (between 10% and 90% levels)
turn-on time
turn-off time
ICon = 1 A
IBon = - IBoff = 100 mA
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 63 K/W 1)
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
RthC
< 3 K/W
Admissible torque for mounting
Zulässiges Anzugsdrehmoment
M4
9 ± 10% lb.in.
1 ± 10% Nm
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
1
2
TIP32 ... TIP32C
Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig wenn die Anschlussdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
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© Diotec Semiconductor AG