BC546 ... BC549 BC546 ... BC549 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2006-05-31 Power dissipation – Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 500 mW Plastic case Kunststoffgehäuse TO-92 (10D3) Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BC546 BC547 BC548/549 Collector-Emitter-voltage E-B short VCES 85 V 50 V 30 V Collector-Emitter-voltage B open VCEO 65 V 45 V 30 V Collector-Base-voltage E open VCBO 80 V 50 V 30 V Emitter-Base-voltage C open VEB0 5V Power dissipation – Verlustleistung Ptot 500 mW 1) Collector current – Kollektorstrom (dc) IC 100 mA Peak Collector current – Kollektor-Spitzenstrom ICM 200 mA Peak Base current – Basis-Spitzenstrom IBM 200 mA - IEM 200 mA Tj TS -55...+150°C -55…+150°C Peak Emitter current – Emitter-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Group A Group B Group C DC current gain – Kollektor-Basis-Stromverhältnis 2) VCE = 5 V, IC = 10 µA hFE typ. 90 typ. 150 typ. 270 VCE = 5 V, IC = 2 mA hFE 110 ... 220 200 ... 450 420 ... 800 VCE = 5 V, IC = 100 mA hFE typ. 120 typ. 200 typ. 400 Small signal current gain Kleinsignal-Stromverstärkung hfe typ. 220 typ. 330 typ. 600 Input impedance – Eingangs-Impedanz hie 1.6 ... 4.5 kΩ 3.2 ...8.5 kΩ 6 ... 15 kΩ Output admittance – Ausgangs-Leitwert hoe 18 < 30 µS 30 < 60 µS 60 < 110 µS Reverser voltage transfer ratio Spannungsrückwirkung hre typ. 1.5*10-4 typ. 2*10-4 typ. 3*10-4 h-Parameters at/bei VCE = 5 V, IC = 2 mA, f = 1 kHz 1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden © Diotec Semiconductor AG http://www.diotec.com/ 1 BC546 ... BC549 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom VCE = 80 V, (B-E short) VCE = 50 V, (B-E short) VCE = 30 V, (B-E short) BC546 BC547 BC548 / BC549 ICES ICES ICES – – – 0.2 nA 0.2 nA 0.2 nA 15 nA 15 nA 15 nA VCE = 80 V, Tj = 125°C, (B-E short) VCE = 50 V, Tj = 125°C, (B-E short) VCE = 30 V, Tj = 125°C, (B-E short) BC546 BC547 BC548 / BC549 ICES ICES ICES – – – – – – 4 µA 4 µA 4 µA VCEsat VCEsat – – 80 mV 200 mV 200 mV 600 mV VBEsat VBEsat – – 700 mV 900 mV – – VBE VBE 580 mV – 660 mV – 700 mV 720 mV fT – 300 MHz – CCBO – 3.5 pF 6 pF CEB0 – 9 pF – F F – – 2 dB 1.2 dB 10 dB 4 dB Collector-Emitter saturation voltage – Kollektor-EmitterSättigungsspg. 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base saturation voltage – Basis-Sättigungsspannung 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-Emitter-voltage – Basis-Emitter-Spannung 2) VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 10 mA Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE =ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure – Rauschzahl VCE = 5 V, IC = 200 µA, RG = 2 kΩ f = 1 kHz, Δf = 200 Hz BC546 / BC547 BC548 / BC549 Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren Available current gain groups per type Lieferbare Stromverstärkungsgruppen pro Typ 2 1 2 RthA < 200 K/W 1) BC556 ... BC559 BC546A BC547A BC548A BC546B BC547B BC548B BC549B BC547C BC548C BC549C Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden http://www.diotec.com/ © Diotec Semiconductor AG