2N3903, 2N3904 NPN Switching Transistors Si-Epitaxial PlanarTransistors NPN Version 2004-01-20 Power dissipation – Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92 (10D3) Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard Pinning 1=C 2=B 3=E Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) 2N3903, 2N3904 Collector-Emitter-voltage B open VCE0 40 V Collector-Base-voltage E open VCE0 60 V Emitter-Base-voltage C open VEB0 6V Power dissipation – Verlustleistung Ptot 625 mW 1) Collector current – Kollektorstrom (dc) IC 600 mA Junction temp. – Sperrschichttemperatur Tj 150/C Storage temperature – Lagerungstemperatur TS - 55…+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. – – – – 200 mV 300 mV VBEsat VBEsat – – – – 850 mV 950 mV ICEV – – 50 nA IEBV – – 50 nA Collector saturation volt. – Kollektor-Sättigungsspannung IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VCEsat VCEsat Base saturation voltage – Basis-Sättigungsspannung IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA Collector cutoff current – Kollektorreststrom VCE = 30 V, VEB = 3 V Emitter cutoff current – Emitterreststrom VCE = 30 V, VEB = 3 V 1 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 30 General Purpose Transistors 2N3903, 2N3904 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis VCE = 1 V, IC = 0.1 mA 2N3903 2N3904 hFE hFE 20 40 – – – – VCE = 1 V, IC = 1 mA 2N3903 2N3904 hFE hFE 35 70 – – – – VCE = 1 V, IC = 10 mA 2N3903 2N3904 hFE hFE 50 100 – – 150 300 VCE = 1 V, IC = 50 mA 2N3903 2N3904 hFE hFE 30 60 – – – – VCE = 1 V, IC = 510 mA 2N3903 2N3904 hFE hFE 15 30 – – – – fT fT 250 MHz 300 MHz – – – – – – 4 pF CEB0 – – 8 pF F F – – – – 6 dB 5 dB ton toff – – – – 70 250 Gain-Bandwidth Product – Transitfrequenz VCE = 20 V, IC = 10 mA, f = 100 MHz 2N3903 2N3904 Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 5 V, IE = ie = 0, f = 100 kHz CCB0 Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, IC = ic = 0, f = 100 kHz Noise figure – Rauschzahl VCE = 5 V, IC = 100 :A 2N3903 RG = 1 kS f = 10 Hz ...15.7 kHz 2N3904 Switching times – Schaltzeiten turn-on time turn-off time ICon = 10 mA, IBon = - IBoff = 1 mA Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren 1 RthA 200 K/W 1) 2N3905, 2N3906 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 31