BC556xBK ... BC559xBK BC556xBK ... BC559xBK General Purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2009-12-07 Power dissipation – Verlustleistung ±0.1 C BE min 12.5 4.6 ±0.1 4.6 2 x 1.27 500 mW Plastic case Kunststoffgehäuse TO-92 (10D3) Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Special packaging bulk Sonder-Lieferform Schüttgut Dimensions - Maße [mm] Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BC556 BC557 BC558/559 Collector-Emitter-voltage E-B short - VCES 80 V 50 V 30 V Collector-Emitter-voltage B open - VCEO 65 V 45 V 30 V Collector-Base-voltage E open - VCBO 80 V 50 V 30 V Emitter-Base-voltage C open - VEB0 5V Power dissipation – Verlustleistung Ptot 500 mW 1) Collector current – Kollektorstrom (dc) - IC 100 mA Peak Collector current – Kollektor-Spitzenstrom - ICM 200 mA Peak Base current – Basis-Spitzenstrom - IBM 200 mA Peak Emitter current – Emitter-Spitzenstrom IEM 200 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Group A Group B Group C DC current gain – Kollektor-Basis-Stromverhältnis 2) - VCE = 5 V, - IC = 10 µA hFE typ. 90 typ. 150 typ. 270 - VCE = 5 V, - IC = 2 mA hFE 110 ... 220 200 ... 450 420 ... 800 - VCE = 5 V, - IC = 100 mA hFE typ. 120 typ. 200 typ. 400 h-Parameters at/bei - VCE = 5 V, - IC = 2 mA, f = 1 kHz 1 Small signal current gain Kleinsignal-Stromverstärkung hfe typ. 220 typ. 330 typ. 600 Input impedance – Eingangs-Impedanz hie 1.6 ... 4.5 kΩ 3.2 ...8.5 kΩ 6 ... 15 kΩ Output admittance – Ausgangs-Leitwert hoe 18 < 30 µS 30 < 60 µS 60 < 110 µS Reverse voltage transfer ratio Spannungsrückwirkung hre typ. 1.5*10-4 typ. 2*10-4 typ. 3*10-4 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden © Diotec Semiconductor AG http://www.diotec.com/ 1 BC556xBK ... BC559xBK Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom - VCE = 80 V, (B-E short) - VCE = 50 V, (B-E short) - VCE = 30 V, (B-E short) BC546 BC547 BC548 / BC549 - ICES - ICES - ICES – – – 0.2 nA 0.2 nA 0.2 nA 15 nA 15 nA 15 nA - VCE = 80 V, Tj = 125°C, (B-E short) - VCE = 50 V, Tj = 125°C, (B-E short) - VCE = 30 V, Tj = 125°C, (B-E short) BC546 BC547 BC548 / BC549 - ICES - ICES - ICES – – – – – – 4 µA 4 µA 4 µA – – 80 mV 250 mV 300 mV 650 mV - VBEsat - VBEsat – – 700 mV 900 mV – – - VBE - VBE 600 mV – 660 mV – 750 mV 800 mV fT – 150 MHz – CCBO – 3.5 pF 6 pF CEB0 – 10 pF – F F – – 2 dB 1 dB 10 dB 4 dB Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg 2) - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA - VCEsat - VCEsat Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2) - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA Base-Emitter-voltage – Basis-Emitter-Spannung 2) - VCE = 5 V, - IC = 2 mA - VCE = 5 V, - IC = 10 mA Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE =ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure – Rauschzahl - VCE = 5 V, - IC = 200 µA, RG = 2 kΩ f = 1 kHz, Δf = 200 Hz BC556 ... BC558 BC559 Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren Available current gain groups per type Lieferbare Stromverstärkungsgruppen pro Typ 2 1 2 RthA < 200 K/W 1) BC546 ... BC549 BC556A BC557A BC558A BC556B BC557B BC558B BC559B BC557C BC558C BC559C Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden http://www.diotec.com/ © Diotec Semiconductor AG