BR800 - BR810 SILICON BRIDGE RECTIFIERS BR10 PRV : 50 - 1000 Volts Io : 8.0 Amperes 0.520 (13.20) 0.480 (12.20) 0.158 (4.00) 0.142 (3.60) FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board AC 0.77 (19.56) 0.73 (18.54) 0.290 (7.36) 0.210 (5.33) AC 0.052 (1.32) 0.048 (1.22) MECHANICAL DATA : 0.75 (19.1) Min. * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL - STD 202 , Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 6.1 grams 0.30 (7.62) 0.25 (6.35) Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING SYMBOL BR800 BR801 BR802 BR804 BR806 BR808 BR810 UNIT Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts Maximum Average Forward Current Tc=50°C IF(AV) 8.0 Amps. IFSM 300 Amps. Current Squared Time at t < 8.3 ms. 2 It 160 AS Maximum Forward Voltage per Diode at I F = 4.0 Amp. VF 1.0 Volts IR 10 µA I R(H) 200 µA RθJC 2.5 °C/W TJ - 40 to + 150 °C TSTG - 40 to + 150 °C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range 2 Notes : 1. Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" THK (8.2cm.x 8.2cm.x 0.3cm.) Al. Plate. heatsink. UPDATE : APRIL 23, 1998 RATING AND CHARACTERISTIC CURVES ( BR800 - BR810 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 300 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT AMPERES 12 HEAT-SINK MOUNTING, Tc 3.2" x 3.2" x 0.12" THK. (8.2cm x 8.2cm x 0.3cm) Al.-PLATE 10 8 6 4 2 0 0 25 50 75 100 125 150 250 T J = 50 ° C 200 150 100 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 50 0 175 1 CASE TEMPERATURE, ( °C) FIG.3 - TYPICAL FORWARD CHARACTERISTICS 4 6 10 20 40 REVERSE CURRENT, MICROAMPERES Pulse Width = 300 µs 1 % Duty Cycle 1.0 T J = 25 °C 0.1 10 T J = 100 °C 1.0 T J = 25 ° C 0.1 0.01 0 20 40 60 80 100 120 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.6 0.8 100 PER DIODE 10 0.01 0.4 60 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 10 FORWARD CURRENT, AMPERES 2 NUMBER OF CYCLES AT 60Hz 1.0 1.2 1.4 1.6 FORWARD VOLTAGE, VOLTS 1.8 140