RBV1000D - RBV1010D SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 10 Amperes 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1 FEATURES : ~ ~ + 1.0 ± 0.1 17.5 ± 0.5 11 ± 0.2 20 ± 0.3 High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC Ideal for printed circuit board Very good heat dissipation 13.5 ± 0.3 * * * * * * * * MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.7 grams 10 2.0 ± 0.2 7.5 7.5 ±0.2 ±0.2 ±0.2 0.7 ± 0.1 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING SYMBOL RBV RBV RBV RBV RBV RBV RBV 1000D 1001D 1002D 1004D 1006D 1008D 1010D 50 100 200 400 600 800 1000 Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 Maximum Average Forward Current Tc = 55°C IF(AV) UNIT Volts Volts Volts 10 Amps. IFSM 300 Amps. Current Squared Time at t < 8.3 ms. 2 It 166 A2S Maximum Forward Voltage per Diode at IF = 10 Amps. VF 1.0 Volts Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Maximum DC Reverse Current Ta = 25 °C IR 10 µA at Rated DC Blocking Voltage Ta = 100 °C IR(H) 200 µA RθJC 2.2 °C/W TJ - 40 to + 150 °C TSTG - 40 to + 150 °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range Notes : 1. Thermal Resistance from junction to case w ith units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate. UPDATE : NOVEMBER 1,1998 FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT AMPERES RATING AND CHARACTERISTIC CURVES ( RBV1000D - RBV1010D ) 12 10 8 6 4 HEAT-SINK MOUNTING, Tc 3.2" x 3.2" x 0.12" THK. (8.2cm x 8.2cm x 0.3cm) Al.-FINNED PLATE 2 0 0 25 50 75 100 125 150 300 250 TJ = 50 °C 200 150 100 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 50 0 175 1 CASE TEMPERATURE, ( °C) FIG.3 - TYPICAL FORWARD CHARACTERISTICS 4 6 10 20 40 60 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE PER DIODE 10 REVERSE CURRENT, MICROAMPERES 100 FORWARD CURRENT, AMPERES 2 NUMBER OF CYCLES AT 60Hz 10 Pulse Width = 300 µs 1 % Duty Cycle 1.0 TJ = 100 °C 1.0 TJ = 25 °C 0.1 TJ = 25 °C 0.1 0.01 0 20 40 60 80 100 120 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 FORWARD VOLTAGE, VOLTS 1.8 140