BR600 - BR610 SILICON BRIDGE RECTIFIERS BR6 PRV : 50 - 1000 Volts Io : 6.0 Amperes 0.445 (11.30) 0.405 (10.30) 0.158 (4.00) 0.142 (3.60) AC FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board 0.62 (15.75) 0.58 (14.73) 0.127 (3.20) 0.047 (1.20) AC 0.042 (1.06) 0.038 (0.96) * Pb / RoHS Free MECHANICAL DATA : 0.75 (19.1) Min. * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL - STD 202 , Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 3.6 grams 0.27 (6.9) 0.23 (5.8) Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 ° C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING SYMBOL BR600 BR601 BR602 BR604 BR606 BR608 BR610 UNIT Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Current Tc=50°C IF(AV) 6.0 A IFSM 200 A Peak Forward Surge Current, Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. I t 2 64 A S Maximum Forward Voltage per Diode at I F =3 A. VF 1.0 V IR 10 µA IR(H) 200 µA Rθ JC 8.0 °C/W TJ - 40 to + 150 °C TSTG - 40 to + 150 °C Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range 2 Notes : 1. Thermal Resistance from junction to case with units mounted on a 2.6" x 1.4" x 0.06" THK (6.5cm.x 3.5cm.x 0.15cm.) Al. Plate. Heatsink. Page 1 of 2 Rev. 02 : March 24, 2005 RATING AND CHARACTERISTIC CURVES ( BR600 - BR610 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES 6.0 5.0 4.0 3.0 2.0 1.0 HEAT-SINK MOUNTING, Tc 2.6" x 1.4" x 0.06" THK. (6.5cm x 3.5cm x 0.15cm ) Al.-PLATE 240 200 120 80 8.3 m s S INGLE HALF SINE W A V E JEDEC METHOD 40 0 0 0 25 50 75 100 125 150 175 1 CASE TEMPERATURE, ( ° C) 4 6 10 20 40 60 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS REVERSE CURRENT, MICROAMPERES PER DIODE 100 10 Pulse W idth = 300 µs 1 % Duty Cycle 1.0 2 NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FORWARD CURRENT, AMPERES T J = 50 °C 160 T J = 25 °C 0.1 PER DIODE 10 T J = 100 °C 1.0 0.1 0.01 T J = 25 °C 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 02 : March 24, 2005