EIC ABR810

ABR800 - ABR810
AVALANCHE BRIDGE
RECTIFIERS
BR6
PRV : 50 - 1000 Volts
Io : 8.0 Amperes
0.445 (11.30)
0.405 (10.30)
FEATURES :
*
*
*
*
*
*
*
0.158 (4.00)
0.142 (3.60)
High case dielectric strength
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
ldeal for printed circuit board
Pb / RoHS Free
AC
0.62 (15.75)
0.58 (14.73)
0.127 (3.20)
0.047 (1.20)
AC
0.042 (1.06)
0.038 (0.96)
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 6.1 grams
0.75 (19.1)
Min.
0.27 (6.9)
0.23 (5.8)
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Recurrent Peak Reverse Voltage
VRRM
ABR
800
50
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Minimum Avalanche Breakdown Voltage at 100 µA
VBO(min.)
100
150
250
450
700
900
1100
V
Maximum Avalanche Breakdown Voltage at 100 µA
VBO(max.)
550
600
700
900
1150
1350
1550
V
RATING
SYMBOL
Maximum Average Forward Current Tc = 50°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Rating for fusing at ( t < 8.3 ms. )
Maximum Forward Voltage per Diode at IF = 4.0 A
ABR
801
100
ABR
802
200
ABR
804
400
ABR
806
600
ABR
808
800
ABR
810
1000
UNIT
V
IF(AV)
8.0
A
IFSM
300
A
It
VF
2
160
A 2S
1.0
V
Maximum DC Reverse Current
Ta = 25 °C
IR
10
µA
at Rated DC Blocking Voltage
Ta = 100 °C
IR(H)
10.0
mA
RθJC
TJ
2.5
°C/W
Operating Junction Temperature Range
- 50 to + 150
°C
Storage Temperature Range
TSTG
- 50 to + 150
°C
Typical Thermal Resistance
( Note 1 )
Note :
1 ) Thermal resistance from Junction to case with units mounted on a 3.2" x 3.2" x 0.12" ( 8.2 x 8.2 x 0.3 cm ) Al. plate. heatsink.
Page 1 of 2
Rev. 02 :March 24, 2005
RATING AND CHARACTERISTIC CURVES ( ABR800 - ABR810)
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
300
PEAK FORWARD SURGE
CURRENT, AMPERES
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
10
HEAT-SINK MOUNTED ON
3.2" x 3.2" x0.12"
(8.2x8.2x0.3 cm.) Al. PLATE
8.0
6.0
4.0
2.0
0
0
25
50
75
100
125
150
240
180
120
8.3 ms SINGLE SINE WAVE
JEDEC METHOD
60
0
175
1
CASE TEMPERATURE, ( °C)
2
4
6
10
20
40
60
100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
10
TJ = 100 °C
REVERSE CURRENT,
MICROAMPERES
FORWARD CURRENT, AMPERES
100
TJ = 25 °C
10
1.0
Pulse Width = 300 µs
1% Duty Cycle
0.1
1.0
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 02 :March 24, 2005