RBV2500D - RBV2510D SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 25 Amperes 3.9 ± 0.2 30 ± 0.3 C3 4.9 ± 0.2 ∅ 3.2 ± 0.1 FEATURES : ~ ~ + 1.0 ± 0.1 17.5 ± 0.5 11 ± 0.2 20 ± 0.3 High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 V DC Ideal for printed circuit board Very good heat dissipation 13.5 ± 0.3 * * * * * * * * MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.7 grams 2.0 ± 0.2 10 7.5 7.5 ±0.2 ±0.2 ±0.2 0.7 ± 0.1 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING SYMBOL RBV RBV RBV RBV RBV RBV RBV 2500D 2501D 2502D 2504D 2506D 2508D 2510D Maximum Recurrent Peak Reverse Voltage V RRM 50 Maximum RMS Voltage 100 200 400 600 800 UNIT 1000 Volts V RMS 35 70 140 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts Maximum Average Forward Current Tc = 55 °C Peak Forward Surge Current Single half sine wave IF(AV) 25 Amps. Superimposed on rated load (JEDEC Method) IFSM 400 Amps. Current Squared Time at t < 8.3 ms. 2 I t 375 Maximum Forward Voltage per Diode at I F = 25 Amps. Maximum DC Reverse Current Ta = 25 °C VF 1.1 at Rated DC Blocking Voltage Ta = 100 °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range IR 10 A2S Volts µA IR(H) 200 µA RθJC 1.2 °C/W TJ - 40 to + 150 °C TSTG - 40 to + 150 °C Notes : 1. Thermal Resistance from junction to case with units mounted on a 5" x 6" x 4.9" (12.8cm.x 15.2cm.x 12.4cm.) Al.-Finned Plate UPDATE : NOVEMBER 1,1998 FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 30 300 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES RATING AND CHARACTERISTIC CURVES ( RBV2500D - RBV2510D ) 25 20 15 10 HEAT-SINK MOUNTING, Tc 5" x 6" x 4.9" THK. (12.8cm x 15.2cm x 12.4cm) Al.-Finned plate 5 0 0 25 50 75 100 125 150 250 TJ = 50 °C 200 150 100 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 50 0 175 1 CASE TEMPERATURE, ( °C) 2 4 6 10 20 40 60 100 NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE PER DIODE 100 10 REVERSE CURRENT, MICROAMPERES FORWARD CURRENT, AMPERES TJ = 100 °C 10 Pulse Width = 300 µs 1 % Duty Cycle 1.0 1.0 TJ = 25 °C 0.1 TJ = 25 °C 0.1 0.01 0 20 40 60 80 100 120 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 FORWARD VOLTAGE, VOLTS 1.8 140