ISL9V5045S3S / ISL9V5045S3
EcoSPARKTM N-Channel Ignition IGBT
500mJ, 450V
Features
General Description
SCIS Energy = 500mJ at TJ =
25oC
The ISL9V5045S3S and ISL9V5045S3 are next generation
ignition IGBTs that offer outstanding SCIS capability in the
industry standard D²-Pak (TO-263) plastic package. This
device is intended for use in automotive ignition circuits,
specifically as a coil drivers. Internal diodes provide voltage
clamping without the need for external components.
Logic Level Gate Drive
Applications
Automotive Ignition Coil Driver Circuits
EcoSPARK™ devices can be custom made to specific
clamp voltages. Contact your nearest Fairchild sales office
for more information.
Coil - On Plug Applications
Package
Symbol
COLLECTOR
EMMITER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
GATE
R1
GATE
EMITTER
R2
COLLECTOR
(FLANGE)
JEDEC TO-263AB
D2-Pak
JEDEC TO-262AA
1
ISL9V5045S3S / ISL9V5045S3 Rev. A
EMITTER
www.fairchildsemi.com
ISL9V5045S3S / ISL9V5045S3 N-Channel Ignition IGBT
August 2005
Symbol
BVCER
Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)
Ratings
480
Units
V
BVECS
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)
24
V
ESCIS25
At Starting TJ = 25°C, ISCIS = 39.2A, L = 650 µHy
500
mJ
ESCIS150
At Starting TJ = 150°C, ISCIS = 31.1A, L = 650 µHy
315
mJ
IC25
Collector Current Continuous, At TC = 25°C, See Fig 9
51
A
IC110
Collector Current Continuous, At TC = 110°C, See Fig 9
43
A
VGEM
Gate to Emitter Voltage Continuous
±10
V
PD
Power Dissipation Total TC = 25°C
300
W
Power Dissipation Derating TC > 25°C
2
W/°C
Operating Junction Temperature Range
-40 to 175
°C
Storage Junction Temperature Range
-40 to 175
°C
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
300
°C
Tpkg
Max Lead Temp for Soldering (Package Body for 10s)
260
°C
ESD
Electrostatic Discharge Voltage at 100pF, 1500Ω
4
kV
TJ
TSTG
TL
Package Marking and Ordering Information
Device Marking
V5045S
Device
ISL9V5045S3ST
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800
V5045S
ISL9V5045S3
TO-262AA
Tube
N/A
50
V5045S
ISL9V5045S3S
TO-263AB
Tube
N/A
50
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
BVCER
Collector to Emitter Breakdown Voltage
IC = 2mA, VGE = 0,
RG = 1KΩ, See Fig. 15
TJ = -40 to 150°C
420
450
480
V
BVCES
Collector to Emitter Breakdown Voltage
IC = 10mA, VGE = 0,
RG = 0, See Fig. 15
TJ = -40 to 150°C
445
475
505
V
BVECS
Emitter to Collector Breakdown Voltage
IC = -75mA, VGE = 0V,
TC = 25°C
30
-
-
V
BVGES
Gate to Emitter Breakdown Voltage
IGES = ± 2mA
±12
±14
-
V
Collector to Emitter Leakage Current
VCER = 320V, TC = 25°C
RG = 1KΩ, See T = 150°C
C
Fig. 11
-
-
25
µA
-
-
1
mA
VEC = 24V, See TC = 25°C
Fig. 11
TC = 150°C
-
-
1
mA
-
-
40
mA
-
100
-
Ω
10K
-
30K
Ω
ICER
IECS
Emitter to Collector Leakage Current
R1
Series Gate Resistance
R2
Gate to Emitter Resistance
On State Characteristics
VCE(SAT)
Collector to Emitter Saturation Voltage
IC = 10A,
VGE = 4.0V
TC = 25°C,
See Fig. 4
-
1.25
1.60
V
VCE(SAT)
Collector to Emitter Saturation Voltage
IC = 15A,
VGE = 4.5V
TC = 150°C
-
1.47
1.80
V
2
ISL9V5045S3S / ISL9V5045S3 Rev. A
www.fairchildsemi.com
ISL9V5045S3S / ISL9V5045S3 N-Channel Ignition IGBT
Device Maximum Ratings TA = 25°C unless otherwise noted
QG(ON)
Gate Charge
IC = 10A, VCE = 12V,
VGE = 5V, See Fig. 14
VGE(TH)
Gate to Emitter Threshold Voltage
IC = 1.0mA,
VCE = VGE,
See Fig. 10
VGEP
Gate to Emitter Plateau Voltage
-
32
-
nC
TC = 25°C
1.3
-
2.2
V
TC = 150°C
0.75
-
1.8
V
-
3.0
-
V
IC = 10A,
VCE = 12V
Switching Characteristics
td(ON)R
trR
td(OFF)L
tfL
SCIS
Current Turn-On Delay Time-Resistive
Current Rise Time-Resistive
Current Turn-Off Delay Time-Inductive
Current Fall Time-Inductive
Self Clamped Inductive Switching
VCE = 14V, RL = 1Ω,
VGE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 12
-
0.7
4
µs
-
2.1
7
µs
VCE = 300V, L = 2mH,
VGE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 12
-
10.8
15
µs
-
2.8
15
µs
TJ = 25°C, L = 650 µH,
RG = 1KΩ, VGE = 5V, See
Fig. 1 & 2
-
-
500
mJ
TO-263, TO-262
-
-
0.5
°C/W
Thermal Characteristics
RθJC
Thermal Resistance Junction-Case
Typical Characteristics
40
RG = 1KΩ, VGE = 5V,Vdd = 14V
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
40
35
TJ = 25°C
30
25
20
15
TJ = 150°C
10
5
SCIS Curves valid for Vclamp Voltages of <480V
0
RG = 1KΩ, VGE = 5V,Vdd = 14V
35
30
TJ = 25°C
25
20
15
TJ = 150°C
10
5
SCIS Curves valid for Vclamp Voltages of <480V
0
0
25
50
75
100
125
150
175
200
0
tCLP, TIME IN CLAMP (µS)
2
3
4
5
6
7
8
9
10
L, INDUCTANCE (mHy)
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
3
ISL9V5045S3S / ISL9V5045S3 Rev. A
1
www.fairchildsemi.com
ISL9V5045S3S / ISL9V5045S3 N-Channel Ignition IGBT
Dynamic Characteristics
1.25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
1.10
ICE = 6A
1.05
VGE = 3.7V
VGE = 4.0V
1.00
0.95
VGE = 4.5V
VGE = 5.0V
VGE = 8.0V
0.90
0.85
-50
-25
0
25
50
75
100
125
150
175
ICE = 10A
1.20
VGE = 3.7V
1.15
1.10
VGE = 4.5V
VGE = 5.0V
1.05
VGE = 8.0V
1.00
-50
-25
0
TJ, JUNCTION TEMPERATURE (°C)
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
75
100
125
150
175
50
VGE = 8.0V
VGE = 5.0V
40
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
30
20
10
TJ = - 40°C
0
1.0
2.0
3.0
VGE = 8.0V
VGE = 5.0V
40
VGE = 4.0V
VGE = 3.7V
30
20
10
TJ = 25°C
0
4.0
VGE = 4.5V
0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector Current vs Collector to Emitter
On-State Voltage
1.0
2.0
3.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
4.0
Figure 6. Collector Current vs Collector to Emitter
On-State Voltage
50
50
VGE = 8.0V
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
50
Figure 4.Collector to Emitter On-State Voltage vs
Junction Temperature
50
VGE = 5.0V
40
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
30
20
10
TJ = 175°C
0
25
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
0
VGE = 4.0V
0
1.0
2.0
3.0
40
30
TJ = 175°C
20
TJ = 25°C
10
TJ = -40°C
0
1.0
4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
1.5
2.5
3.5
2.0
3.0
VGE, GATE TO EMITTER VOLTAGE (V)
4.0
4.5
Figure 8. Transfer Characteristics
4
ISL9V5045S3S / ISL9V5045S3 Rev. A
DUTY CYCLE < 0.5%, VCE = 5V
PULSE DURATION = 250µs
www.fairchildsemi.com
ISL9V5045S3S / ISL9V5045S3 N-Channel Ignition IGBT
Typical Characteristics (Continued)
55
2.0
VGE = 4.0V
VCE = VGE
45
VTH, THRESHOLD VOLTAGE (V)
ICE, DC COLLECTOR CURRENT (A)
50
40
35
30
25
20
15
10
ICE = 1mA
1.8
1.6
1.4
1.2
1.0
5
0
25
50
75
100
125
150
0.8
-50
175
-25
0
TC, CASE TEMPERATURE (°C)
25
50
75
100
125
Figure 9. DC Collector Current vs Case
Temperature
175
Figure 10. Threshold Voltage vs Junction
Temperature
10000
20
ICE = 6.5A, VGE = 5V, RG = 1KΩ
VECS = 24V
Resistive tOFF
18
1000
16
SWITCHING TIME (µS)
LEAKAGE CURRENT (µA)
150
TJ, JUNCTION TEMPERATURE (°C)
100
VCES = 300V
10
VCES = 250V
14
Inductive tOFF
12
10
8
6
1
Resistive tON
4
0.1
-50
-25
0
25
50
75
100
125
150
2
25
175
50
Figure 11. Leakage Current vs Junction
Temperature
125
150
175
8
IG(REF) = 1mA, RL = 0.6Ω, TJ = 25°C
VGE, GATE TO EMITTER VOLTAGE (V)
FREQUENCY = 1 MHz
2500
C, CAPACITANCE (pF)
100
Figure 12. Switching Time vs Junction
Temperature
3000
CIES
2000
1500
1000
CRES
500
0
0
75
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
COES
5
10
15
20
6
5
VCE = 12V
4
3
2
VCE = 6V
1
0
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0
10
20
30
40
50
QG, GATE CHARGE (nC)
Figure 13. Capacitance vs Collector to Emitter
Voltage
Figure 14. Gate Charge
5
ISL9V5045S3S / ISL9V5045S3 Rev. A
7
www.fairchildsemi.com
ISL9V5045S3S / ISL9V5045S3 N-Channel Ignition IGBT
Typical Characteristics (Continued)
475
BVCER, BREAKDOWN VOLTAGE (V)
ICER = 10mA
TJ = - 40°C
470
465
460
455
TJ = 25°C
TJ = 175°C
450
445
440
435
430
10
100
RG, SERIES GATE RESISTANCE (Ω)
1000
5000
ZthJC, NORMALIZED THERMAL RESPONSE
Figure 15. Breakdown Voltage vs Series Gate Resistance
100
0.5
0.2
0.1
10-1
0.05
0.02
t1
10-2
PD
0.01
t2
SINGLE PULSE
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3 -6
10
10-5
10-4
10-3
10-2
T1, RECTANGULAR PULSE DURATION (s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
Test Circuits and Waveforms
L
VCE
R
or
L
C
PULSE
GEN
LOAD
C
RG
RG = 1KΩ
DUT
G
G
DUT
+
VCE
-
5V
E
E
Figure 17. Inductive Switching Test Circuit
Figure 18. tON and tOFF Switching Test Circuit
6
ISL9V5045S3S / ISL9V5045S3 Rev. A
www.fairchildsemi.com
ISL9V5045S3S / ISL9V5045S3 N-Channel Ignition IGBT
Typical Characteristics (Continued)
VCE
BVCES
tP
VCE
L
IAS
VDD
VARY tP TO OBTAIN
REQUIRED PEAK IAS
+
RG
VDD
-
VGS
DUT
tP
0V
IAS
0
0.01Ω
tAV
Figure 19. Energy Test Circuit
Figure 20. Energy Waveforms
7
ISL9V5045S3S / ISL9V5045S3 Rev. A
www.fairchildsemi.com
ISL9V5045S3S / ISL9V5045S3 N-Channel Ignition IGBT
Test Circuits and Waveforms (Continued)
th
JUNCTION
REV 27 May 2005
ISL9V5045S3S / ISL9V5045S3
CTHERM1 th 6 82e-4
CTHERM2 6 5 105e-4
CTHERM3 5 4 12e-3
CTHERM4 4 3 33e-3
CTHERM5 3 2 55e-3
CTHERM6 2 tl 170e-3
RTHERM1
CTHERM1
6
RTHERM1 th 6 3e-3
RTHERM2 6 5 20e-3
RTHERM3 5 4 50e-3
RTHERM4 4 3 60e-3
RTHERM5 3 2 100e-3
RTHERM6 2 tl 127e-3
RTHERM2
CTHERM2
5
SABER Thermal Model
SABER thermal model
ISL9V5045S3S / ISL9V5045S3
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 82e-4
ctherm.ctherm2 6 5 = 105e-4
ctherm.ctherm3 5 4 = 12e-3
ctherm.ctherm4 4 3 = 33e-3
ctherm.ctherm5 3 2 = 55e-3
ctherm.ctherm6 2 tl = 170e-3
RTHERM3
CTHERM3
4
RTHERM4
rtherm.rtherm1 th 6 = 3e-3
rtherm.rtherm2 6 5 = 20e-3
rtherm.rtherm3 5 4 = 50e-3
rtherm.rtherm4 4 3 = 60e-3
rtherm.rtherm5 3 2 = 100e-3
rtherm.rtherm6 2 tl = 127e-3
}
CTHERM4
3
RTHERM5
CTHERM5
2
RTHERM6
CTHERM6
tl
8
ISL9V5045S3S / ISL9V5045S3 Rev. A
CASE
www.fairchildsemi.com
ISL9V5045S3S / ISL9V5045S3 N-Channel Ignition IGBT
SPICE Thermal Model
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST®
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
Across the board. Around the world.™
The Power Franchise®
Programmable Active Droop™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench®
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC™
UltraFET®
UniFET™
VCX™
Wire™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
9
ISL9V5045S3S / ISL9V5045S3 Rev. A
www.fairchildsemi.com
ISL9V5045S3S / ISL9V5045S3 N-Channel Ignition IGBT
TRADEMARKS