ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 /
ISL9V3040S3
EcoSPARK® 300mJ, 400V, N-Channel Ignition IGBT
General Description
Formerly Developmental Type 49362
The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and
ISL9V3040S3 are the next generation ignition IGBTs that offer
outstanding SCIS capability in the space saving D-Pak (TO-252), as
well as the industry standard D²-Pak (TO-263), and TO-262 and TO220 plastic packages. This device is intended for use in automotive
ignition circuits, specifically as a coil driver. Internal diodes provide
voltage clamping without the need for external components.
Applications
• Automotive Ignition Coil Driver Circuits
• Coil- On Plug Applications
Features
EcoSPARK® devices can be custom made to specific clamp
voltages. Contact your nearest Fairchild sales office for more
information.
• Space saving D-Pak package availability
• SCIS Energy = 300mJ at TJ = 25oC
• Logic Level Gate Drive
Package
Symbol
JEDEC TO-263AB
D²-Pak
JEDEC TO-220AB
E
C
G
COLLECTOR
G
E
R1
JEDEC TO-252AA
D-Pak
JEDEC TO-262AA
E
GATE
R2
C
G
G
EMITTER
E
COLLECTOR
(FLANGE)
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
BVCER
Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)
Ratings
430
Units
V
BVECS
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)
24
V
ESCIS25
At Starting TJ = 25°C, ISCIS = 14.2A, L = 3.0 mHy
300
mJ
ESCIS150
At Starting TJ = 150°C, ISCIS = 10.6A, L = 3.0 mHy
170
mJ
IC25
Collector Current Continuous, At TC = 25°C, See Fig 9
21
A
IC110
Collector Current Continuous, At TC = 110°C, See Fig 9
17
A
VGEM
Gate to Emitter Voltage Continuous
±10
V
Power Dissipation Total TC = 25°C
150
W
Power Dissipation Derating TC > 25°C
1.0
W/°C
PD
TJ
TSTG
TL
Operating Junction Temperature Range
-40 to 175
°C
Storage Junction Temperature Range
-40 to 175
°C
°C
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
300
Tpkg
Max Lead Temp for Soldering (Package Body for 10s)
260
°C
ESD
Electrostatic Discharge Voltage at 100pF, 1500Ω
4
kV
©2013 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. C2, Oct 2013
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
October 2013
Device Marking
V3040D
Device
ISL9V3040D3ST
V3040S
V3040P
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500
ISL9V3040S3ST
TO-263AB
330mm
24mm
800
ISL9V3040P3
TO-220AB
Tube
N/A
50
V3040S
ISL9V3040S3
TO-262AA
Tube
N/A
50
V3040D
ISL9V3040D3S
TO-252AA
Tube
N/A
75
V3040S
ISL9V3040S3S
TO-263AB
Tube
N/A
50
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
IC = 2mA, VGE = 0,
RG = 1KΩ, See Fig. 15
TJ = -40 to 150°C
370
400
430
V
IC = 10mA, VGE = 0,
RG = 0, See Fig. 15
TJ = -40 to 150°C
390
420
450
V
IC = -75mA, VGE = 0V,
TC = 25°C
30
-
-
V
IGES = ± 2mA
±12
±14
-
V
-
-
25
µA
TC = 150°C
-
-
1
mA
VEC = 24V, See TC = 25°C
Fig. 11
TC = 150°C
-
-
1
mA
-
-
40
mA
-
70
-
Ω
10K
-
26K
Ω
Off State Characteristics
BVCER
Collector to Emitter Breakdown Voltage
BVCES
Collector to Emitter Breakdown Voltage
BVECS
Emitter to Collector Breakdown Voltage
BVGES
Gate to Emitter Breakdown Voltage
ICER
Collector to Emitter Leakage Current
IECS
Emitter to Collector Leakage Current
R1
R2
Series Gate Resistance
VCER = 250V,
RG = 1KΩ,
See Fig. 11
TC = 25°C
Gate to Emitter Resistance
On State Characteristics
VCE(SAT)
Collector to Emitter Saturation Voltage
VCE(SAT)
Collector to Emitter Saturation Voltage
VCE(SAT)
Collector to Emitter Saturation Voltage
IC = 6A,
VGE = 4V
TC = 25°C,
See Fig. 3
-
1.25
1.60
V
IC = 10A,
VGE = 4.5V
TC = 150°C,
See Fig. 4
-
1.58
1.80
V
IC = 15A,
VGE = 4.5V
TC = 150°C
-
1.90
2.20
V
-
17
-
nC
Dynamic Characteristics
QG(ON)
Gate Charge
VGE(TH)
Gate to Emitter Threshold Voltage
VGEP
Gate to Emitter Plateau Voltage
IC = 10A, VCE = 12V,
VGE = 5V, See Fig. 14
IC = 1.0mA,
VCE = VGE,
See Fig. 10
TC = 25°C
TC = 150°C
IC = 10A, VCE = 12V
1.3
-
2.2
V
0.75
-
1.8
V
-
3.0
-
V
Switching Characteristics
td(ON)R
Current Turn-On Delay Time-Resistive
td(OFF)L
Current Turn-Off Delay Time-Inductive
trR
tfL
SCIS
Current Rise Time-Resistive
Current Fall Time-Inductive
Self Clamped Inductive Switching
VCE = 14V, RL = 1Ω,
VGE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 12
-
0.7
4
µs
-
2.1
7
µs
VCE = 300V, L = 500µHy,
VGE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 12
-
4.8
15
µs
-
2.8
15
µs
TJ = 25°C, L = 3.0 mHy,
RG = 1KΩ, VGE = 5V, See
Fig. 1 & 2
-
-
300
mJ
All packages
-
-
1.0
°C/W
Thermal Characteristics
RθJC
Thermal Resistance Junction-Case
©2013 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. C2, Oct 2013
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
Package Marking and Ordering Information
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
30
RG = 1kΩ, VGE = 5V,Vdd = 14V
25
20
15
TJ = 25°C
TJ = 150°C
10
5
SCIS Curves valid for Vclamp Voltages of <430V
0
0
25
50
75
100
125
150
175
200
30
RG = 1kΩ, VGE = 5V,Vdd = 14V
25
20
15
TJ = 25°C
10
TJ = 150°C
5
SCIS Curves valid for Vclamp Voltages of <430V
0
0
2
4
tCLP, TIME IN CLAMP (µS)
VGE = 3.7V
VGE = 4.0V
1.26
1.22
VGE = 4.5V
1.18
VGE = 5.0V
VGE = 8.0V
1.14
-75
-50
-25
0
25
50
75
100
125
150
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE = 6A
1.8
ICE = 10A
1.7
VGE = 3.7V
VGE = 4.0V
1.6
1.5
1.4
VGE = 4.5V
VGE = 5.0V
1.3
VGE = 8.0V
1.2
-75
175
-50
-25
0
TJ, JUNCTION TEMPERATURE (°C)
VGE = 5.0V
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
15
10
5
TJ = - 40°C
0
0
1.0
2.0
3.0
4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage vs
Collector Current
©2013 Fairchild Semiconductor Corporation
50
75
100
125
150
175
Figure 4. Collector to Emitter On-State Voltage
vs Junction Temperature
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
VGE = 8.0V
20
25
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
25
10
8
L, INDUCTANCE (mHy)
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp
1.30
6
25
VGE = 8.0V
VGE = 5.0V
20
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
15
10
5
TJ = 25°C
0
0
1.0
2.0
3.0
4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector to Emitter On-State Voltage
vs Collector Current
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. C2, Oct 2013
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
Typical Performance Curves
VGE = 8.0V
VGE = 5.0V
20
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
15
10
5
TJ = 175°C
0
0
1.0
2.0
3.0
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
25
25
20
15
TJ = 150°C
10
TJ = 25°C
5
TJ = -40°C
0
4.0
DUTY CYCLE < 0.5%, VCE = 5V
PULSE DURATION = 250µs
1.0
1.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
3.0
3.5
2.2
VTH, THRESHOLD VOLTAGE (V)
20
15
10
5
25
50
75
100
125
150
2.0
1.8
1.6
1.4
1.2
1.0
175
-50
-25
0
25
12
SWITCHING TIME (µS)
100
10
VCES = 300V
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Leakage Current vs Junction
Temperature
©2013 Fairchild Semiconductor Corporation
175
Inductive tOFF
8
6
4
VCES = 250V
25
150
Resistive tOFF
10
1000
0
125
ICE = 6.5A, VGE = 5V, RG = 1KΩ
VECS = 24V
-25
100
75
Figure 10. Threshold Voltage vs Junction
Temperature
10000
-50
50
TJ JUNCTION TEMPERATURE (°C)
Figure 9. DC Collector Current vs Case
Temperature
0.1
4.5
ICE = 1mA
TC, CASE TEMPERATURE (°C)
1
4.0
VCE = VGE
VGE = 4.0V
0
LEAKAGE CURRENT (µA)
2.5
Figure 8. Transfer Characteristics
25
ICE, DC COLLECTOR CURRENT (A)
2.0
VGE, GATE TO EMITTER VOLTAGE (V)
175
2
Resistive tON
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Switching Time vs Junction
Temperature
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. C2, Oct 2013
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
Typical Performance Curves (Continued)
8
FREQUENCY = 1 MHz
VGE, GATE TO EMITTER VOLTAGE (V)
C, CAPACITANCE (pF)
1600
1200
CIES
800
CRES
400
COES
6
5
0
5
10
15
20
VCE = 12V
4
3
2
VCE = 6V
1
0
0
IG(REF) = 1mA, RL = 1.25Ω, TJ = 25°C
7
25
0
4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
BVCER, BREAKDOWN VOLTAGE (V)
12
16
20
24
28
32
QG, GATE CHARGE (nC)
Figure 13. Capacitance vs Collector to Emitter
Voltage
430
8
Figure 14. Gate Charge
ICER = 10mA
425
420
TJ = - 40°C
TJ = 175°C
415
TJ = 25°C
410
405
400
395
390
10
100
1000
2000
3000
RG, SERIES GATE RESISTANCE (kΩ)
ZthJC, NORMALIZED THERMAL RESPONSE
Figure 15. Breakdown Voltage vs Series Gate Resistance
100
0.5
0.2
10-1
0.1
0.05
t1
0.02
PD
0.01
t2
10-2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
10-3
10-6
10-5
10-4
10-3
10-2
10-1
T1, RECTANGULAR PULSE DURATION (s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
©2013 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. C2, Oct 2013
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
Typical Performance Curves (Continued)
L
VCE
R
or
L
C
PULSE
GEN
RG
G
C
RG = 1KΩ
DUT
G
Figure 18. tON and tOFF Switching Test Circuit
BVCES
VCE
tP
VCE
L
VGE
0V
tP
IAS
C
RG
DUT
-
VDD
E
IAS
0
0.01Ω
Figure 19. Energy Test Circuit
©2013 Fairchild Semiconductor Corporation
VDD
+
G
VCE
E
Figure 17. Inductive Switching Test Circuit
REQUIRED PEAK IAS
+
DUT
5V
E
VARY tP TO OBTAIN
LOAD
tAV
Figure 20. Energy Waveforms
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. C2, Oct 2013
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
Test Circuit and Waveforms
REV 7 March 2002
th
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 /
ISL9V3040S3
CTHERM1 th 6 2.1e -3
CTHERM2 6 5 1.4e -1
CTHERM3 5 4 7.3e -3
CTHERM4 4 3 2.1e -1
CTHERM5 3 2 1.1e -1
CTHERM6 2 tl 6.2e +6
RTHERM1 th 6 1.2e -1
RTHERM2 6 5 1.9e -1
RTHERM3 5 4 2.2e -1
RTHERM4 4 3 6.0e -2
RTHERM5 3 2 5.8e -2
RTHERM6 2 tl 1.6e -3
RTHERM1
rtherm.rtherm1 th 6 = 1.2e -1
rtherm.rtherm2 6 5 = 1.9e -1
rtherm.rtherm3 5 4 = 2.2e -1
rtherm.rtherm4 4 3 = 6.0e -2
rtherm.rtherm5 3 2 = 5.8e -2
rtherm.rtherm6 2 tl = 1.6e -3
}
CTHERM1
6
CTHERM2
RTHERM2
5
SABER Thermal Model
SABER thermal model
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 /
ISL9V3040S3
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 2.1e -3
ctherm.ctherm2 6 5 = 1.4e -1
ctherm.ctherm3 5 4 = 7.3e -3
ctherm.ctherm4 4 3 = 2.2e -1
ctherm.ctherm5 3 2 =1.1e -1
ctherm.ctherm6 2 tl = 6.2e +6
JUNCTION
CTHERM3
RTHERM3
4
RTHERM4
CTHERM4
3
CTHERM5
RTHERM5
2
CTHERM6
RTHERM6
tl
©2013 Fairchild Semiconductor Corporation
CASE
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. C2, Oct 2013
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
SPICE Thermal Model
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower
AX-CAP®*
BitSiC
Build it Now
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ESBC
F-PFS
FRFET®
SM
Global Power Resource
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Green FPS
Green FPS e-Series
Gmax
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ISOPLANAR
Making Small Speakers Sound Louder
and Better™
MegaBuck
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MicroFET
MicroPak
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®
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FETBench
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Sync-Lock™
®
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Quiet Series
RapidConfigure
Saving our world, 1mW/W/kW at a time™
SignalWise
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SMART START
Solutions for Your Success
SPM®
STEALTH
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SuperSOT-3
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SyncFET
®*
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TinyLogic®
TINYOPTO
TinyPower
TinyPWM
TinyWire
TranSiC
TriFault Detect
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Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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changes at any time without notice to improve the design.
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The datasheet is for reference information only.
Rev. I66
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