FAIRCHILD FGW15N40A

FGW15N40A
Strobe Flash N-Channel Logic Level IGBT
Features
General Description
„ VCE(SAT) = 4.4V at IC=150A
This N-Channel IGBT is a MOS gated, logic level device
which has been especially tailored for camera flash applications where board space is a premium. These devices have
been designed to offer exceptional power dissipation in a
very small footprint for applications where bigger, more expensive packages are impractical. The gate is ESD protected with a zener diode.
„ tfl = 1.1µs, td(OFF)I = 0.46µs
„ 2kV ESD Protected
„ High Peak Current Density
„ TSSOP - 8 package, small footprint, low profile
(1mm thick)
Applications
„ Camera Strobe
Internal Diagram
4
3
2
1
5
6
7
8
E
E
E
G
C
C
C
C
Pin 1
TSSOP-8
©2005 Fairchild Semiconductor Corporation
FGW15N40A Rev. A2
1
www.fairchildsemi.com
FGW15N40A Strobe Flash N-Channel Logic Level IGBT
August 2005
Symbol
BVCES
Parameter
Collector to Emitter Breakdown Voltage
IC
Collector Current Continuous(DC)
ICP
Collector Current Pulsed(100µs)
Ratings
400
Units
V
8
A
150
A
VGES
Gate to Emitter Voltage Continuous(DC)
±6
V
VGEP
Gate to Emitter Voltage Pulsed
±8
V
PD
Power Dissipation Total TC = 25°C
1.25
W
TJ
Operating Junction Temperature Range
-40 to 150
°C
TSTG
Storage Junction Temperature Range
-40 to 150
°C
ESD
Electrostatic Discharge Voltage at 100pF, 1500Ω
2
kV
Package Marking and Ordering Information
Device Marking
15N40A
Device
FGW15N40A
Package
TSSOP - 8
Tape Width
12mm / 16mm
Quantity
2500
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
BVCES
Collector to Emitter Breakdown Voltage
IC = 1mA, VGE = 0V
400
-
-
V
BVGES
Gate-Emitter Breakdown Voltage
IGES = ± 1mA
±8
-
-
V
ICES
Collector to Emitter Leakage Current
VCE = 400V
TC = +25oC
-
-
10
µA
o
-
-
250
µA
VGE = ± 8V
-
-
±10
µA
IC = 150A, VGE = 4.0V (NOTE 1)
-
4.4
6.0
V
TC = +125 C
IGES
Gate-Emitter Leakage Current
On State Characteristics
VCE(SAT)
Collector to Emitter Saturation Voltage
Dynamic Characteristics
QG(ON)
Gate Charge
IC = 150A, VCE = 300V, VGE = 8V
-
41
-
nC
VGEPL
Gate to Emitter Plateau Voltage
IC = 150A, VCE = 300V
-
3.3
-
V
VGE(TH)
Gate to Emitter Threshold Voltage
IC = 1.0mA,VCE = VGE
0.4
0.61
0.75
V
Input Capacitance
VCE = 10V, VGE = 0V, f = 1MHz
-
1800
-
pF
VCE = 300V, IC = 150A,
-
0.91
-
µs
CIES
Switching Characteristics
tON
Turn-On Time
td(ON)I
Current Turn-On Delay Time
VGE = 4V, RL = 2Ω,
-
0.18
-
µs
trI
Current Rise Time
RG = 51Ω, TJ = 25°C
-
0.73
-
µs
tOFF
Turn-Off Time
-
1.56
-
µs
td(OFF)I
Current Turn-Off Delay Time
-
0.46
-
µs
tfI
Current Fall Time
-
1.1
-
µs
-
80
-
°C/W
Thermal Characteristics
RθJA
Thermal Resistance Junction-Case
TSSOP - 8 (NOTE 2)
Notes:
1. Pulse Duration = 100µsec
2. Mounted on a 1 inch2 1oz copper pad
2
FGW15N40A Rev. A2
www.fairchildsemi.com
FGW15N40A Strobe Flash N-Channel Logic Level IGBT
Device Maximum Ratings TA = 25°C unless otherwise noted
ICE, ICOLLECTOR TO EMITTER CURRENT (A)
ICE, ICOLLECTOR TO EMITTER CURRENT (A)
160
TJ = -40°C
PULSE DURATION = 100µs
140
120
100
80
Waveforms in
descending order
60
VGE = 6.0V
40
VGE = 5.0V
VGE = 4.0V
20
VGE = 3.5V
0
1
1.5
2
2.5
3
3.5
4
160
TJ = 25°C
PULSE DURATION = 100µs
140
120
100
80
Waveforms in
descending order
60
VGE = 6.0V
40
VGE = 5.0V
VGE = 4.0V
20
VGE = 3.5V
0
1
4.5
1.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE, ICOLLECTOR TO EMITTER CURRENT (A)
ICE, ICOLLECTOR TO EMITTER CURRENT (A)
TJ = 70°C
PULSE DURATION = 100µs
120
100
80
Waveforms in
descending order
VGE = 6.0V
40
VGE = 5.0V
VGE = 4.0V
20
VGE = 3.5V
0
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
100
80
Waveforms in
descending order
60
VGE = 6.0V
40
VGE = 5.0V
VGE = 4.0V
20
VGE = 3.5V
0
1.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
5
ICE = 120A
4
ICE = 90A
ICE = 60A
2
1
0
20
40
60
80
100
120
140
2.5
3
3.5
4
4.5
5
5.5
6
7
VGE = 4.5V
PULSE DURATION = 100µs
6
ICE = 150A
5
ICE = 120A
4
ICE = 90A
3
ICE = 60A
2
-40
TC, CASE TEMPERATURE (°C)
-20
0
20
40
60
80
100
120
140
TC, CASE TEMPERATURE (°C)
Figure 5. Collector to Emitter Saturation Voltage
vs Case Temperature
Figure 6. Collector to Emitter Saturation Voltage
vs Case Temperature
3
FGW15N40A Rev. A2
2
Figure 4. Collector to Emitter On-State Voltage vs
Collector Current
ICE = 150A
-20
5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VGE = 4V
PULSE DURATION = 100µs
-40
4.5
120
1
8
3
4
TJ = 125°C
PULSE DURATION = 100µs
140
6
Figure 3. Collector to Emitter On-State Voltage vs
Collector Current
6
3.5
160
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
7
3
Figure 2. Collector to Emitter On-State Voltage vs
Collector Current
160
60
2.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 1. Collector to Emitter On-State Voltage vs
Collector Current
140
2
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FGW15N40A Strobe Flash N-Channel Logic Level IGBT
Typical Characteristics
DUTY CYCLE < 0.5%
PULSE DURATION = 250µs
TJ = -40oC
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
7
6
ICE = 150A
ICE = 120A
5
ICE = 90A
ICE = 60A
4
3
2
0.5
1
1.5
2
2.5
3
3.5
4
7
DUTY CYCLE < 0.5%
PULSE DURATION = 250µs
TJ = 25oC
6
ICE = 150A
ICE = 120A
ICE = 90A
5
ICE = 60A
4
3
2
0.5
1
1.5
VGE, GATE TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%
PULSE DURATION = 250µs
TJ = 70oC
8
ICE = 150A
7
ICE = 120A
ICE = 90A
6
ICE = 60A
5
4
3
3
3.5
4
4.5
5
9
DUTY CYCLE < 0.5%
PULSE DURATION = 250µs
TJ = 125oC
8
ICE = 150A
7
ICE = 120A
ICE = 90A
6
ICE = 60A
5
4
3
2
2
0
1
2
3
4
5
6
0
VGE, GATE TO EMITTER VOLTAGE (V)
0.75
1
2
3
4
5
6
7
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 9. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
Figure 10. Collector to Emitter On-State Voltage
vs Gate to Emitter Voltage
5000
ICE = 1mA
VCE = VGE
FREQUENCY = 1MHz
0.7
CIES
1000
C, CAPACITANCE (pF)
VGE(TH), THRESHOLD VOLTAGE (V)
2.5
Figure 8. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
9
2
VGE, GATE TO EMITTER VOLTAGE (V)
0.65
0.6
0.55
0.5
0.45
0.4
-40
COES
100
CRES
10
4
-20
0
20
40
60
80
100
120
140
0.1
TC, CASE TEMPERATURE (°C)
Figure 11. Gate to Emitter Threshold Voltage vs
Case Temperature
10
100
Figure 12. Capacitance vs Collector to Emitter
Voltage
4
FGW15N40A Rev. A2
1
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
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FGW15N40A Strobe Flash N-Channel Logic Level IGBT
Typical Characteristics (Continued)
6
3
VCC = 300V, VGE = 4V, RGE = 51Ω, TJ = 25oC
VCC = 300V, ICE = 150A, VGE = 4V, TJ = 25oC
SWITCHING TIME (µs)
SWITCHING TIME (µs)
toff
tfall
1
ton
toff
tfall
1
ton
trise
trise
0.1
0.5
0
25
50
75
100
125
150
0
50
100
Figure 13. Switching Time vs Collector Current
250
300
Figure 14. Switching Time vs Gate Resistance
160
IG(REF) = 1mA, VCC = 300V, RL = 2Ω, TJ = 25oC
ICP, COLLECTOR PEAK CURRENT (A)
VGE, GATE TO EMITTER VOLTAGE (V)
200
RG, GATE RESISTANCE (Ω)
ICE, COLLECTOR TO EMITTER CURRENT (A)
8
150
7
6
5
4
3
2
1
0
TJ = 25°C
PULSE DURATION = 100µs
140
120
100
80
60
40
20
0
0
5
10
15
20
25
30
35
40
1
45
1.5
QG, GATE CHARGE (nC)
2
2.5
3
3.5
4
4.5
5
5.5
6
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 15. Gate Charge
Figure 16. Collector Current Limit vs Gate to
Emitter Voltage
ZθJA , NORMALIZED THERMAL RESPONSE
2.0
1.0
0.1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
t1
PD
0.01
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJA X RθJA) + TC
SINGLE PULSE
0.001
10-4
10-3
10-2
10-1
100
101
t1 , RECTANGULAR PULSE DURATION (s)
Figure 17. Normalized Transient Thermal Impedance, Junction to Case
5
FGW15N40A Rev. A2
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FGW15N40A Strobe Flash N-Channel Logic Level IGBT
Typical Characteristics (Continued)
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
6
FGW15N40A Rev. A2
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FGW15N40A Strobe Flash N-Channel Logic Level IGBT
TRADEMARKS