FGW15N40A Strobe Flash N-Channel Logic Level IGBT Features General Description VCE(SAT) = 4.4V at IC=150A This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for camera flash applications where board space is a premium. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where bigger, more expensive packages are impractical. The gate is ESD protected with a zener diode. tfl = 1.1µs, td(OFF)I = 0.46µs 2kV ESD Protected High Peak Current Density TSSOP - 8 package, small footprint, low profile (1mm thick) Applications Camera Strobe Internal Diagram 4 3 2 1 5 6 7 8 E E E G C C C C Pin 1 TSSOP-8 ©2005 Fairchild Semiconductor Corporation FGW15N40A Rev. A2 1 www.fairchildsemi.com FGW15N40A Strobe Flash N-Channel Logic Level IGBT August 2005 Symbol BVCES Parameter Collector to Emitter Breakdown Voltage IC Collector Current Continuous(DC) ICP Collector Current Pulsed(100µs) Ratings 400 Units V 8 A 150 A VGES Gate to Emitter Voltage Continuous(DC) ±6 V VGEP Gate to Emitter Voltage Pulsed ±8 V PD Power Dissipation Total TC = 25°C 1.25 W TJ Operating Junction Temperature Range -40 to 150 °C TSTG Storage Junction Temperature Range -40 to 150 °C ESD Electrostatic Discharge Voltage at 100pF, 1500Ω 2 kV Package Marking and Ordering Information Device Marking 15N40A Device FGW15N40A Package TSSOP - 8 Tape Width 12mm / 16mm Quantity 2500 Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCES Collector to Emitter Breakdown Voltage IC = 1mA, VGE = 0V 400 - - V BVGES Gate-Emitter Breakdown Voltage IGES = ± 1mA ±8 - - V ICES Collector to Emitter Leakage Current VCE = 400V TC = +25oC - - 10 µA o - - 250 µA VGE = ± 8V - - ±10 µA IC = 150A, VGE = 4.0V (NOTE 1) - 4.4 6.0 V TC = +125 C IGES Gate-Emitter Leakage Current On State Characteristics VCE(SAT) Collector to Emitter Saturation Voltage Dynamic Characteristics QG(ON) Gate Charge IC = 150A, VCE = 300V, VGE = 8V - 41 - nC VGEPL Gate to Emitter Plateau Voltage IC = 150A, VCE = 300V - 3.3 - V VGE(TH) Gate to Emitter Threshold Voltage IC = 1.0mA,VCE = VGE 0.4 0.61 0.75 V Input Capacitance VCE = 10V, VGE = 0V, f = 1MHz - 1800 - pF VCE = 300V, IC = 150A, - 0.91 - µs CIES Switching Characteristics tON Turn-On Time td(ON)I Current Turn-On Delay Time VGE = 4V, RL = 2Ω, - 0.18 - µs trI Current Rise Time RG = 51Ω, TJ = 25°C - 0.73 - µs tOFF Turn-Off Time - 1.56 - µs td(OFF)I Current Turn-Off Delay Time - 0.46 - µs tfI Current Fall Time - 1.1 - µs - 80 - °C/W Thermal Characteristics RθJA Thermal Resistance Junction-Case TSSOP - 8 (NOTE 2) Notes: 1. Pulse Duration = 100µsec 2. Mounted on a 1 inch2 1oz copper pad 2 FGW15N40A Rev. A2 www.fairchildsemi.com FGW15N40A Strobe Flash N-Channel Logic Level IGBT Device Maximum Ratings TA = 25°C unless otherwise noted ICE, ICOLLECTOR TO EMITTER CURRENT (A) ICE, ICOLLECTOR TO EMITTER CURRENT (A) 160 TJ = -40°C PULSE DURATION = 100µs 140 120 100 80 Waveforms in descending order 60 VGE = 6.0V 40 VGE = 5.0V VGE = 4.0V 20 VGE = 3.5V 0 1 1.5 2 2.5 3 3.5 4 160 TJ = 25°C PULSE DURATION = 100µs 140 120 100 80 Waveforms in descending order 60 VGE = 6.0V 40 VGE = 5.0V VGE = 4.0V 20 VGE = 3.5V 0 1 4.5 1.5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) ICE, ICOLLECTOR TO EMITTER CURRENT (A) ICE, ICOLLECTOR TO EMITTER CURRENT (A) TJ = 70°C PULSE DURATION = 100µs 120 100 80 Waveforms in descending order VGE = 6.0V 40 VGE = 5.0V VGE = 4.0V 20 VGE = 3.5V 0 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 100 80 Waveforms in descending order 60 VGE = 6.0V 40 VGE = 5.0V VGE = 4.0V 20 VGE = 3.5V 0 1.5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) 5 ICE = 120A 4 ICE = 90A ICE = 60A 2 1 0 20 40 60 80 100 120 140 2.5 3 3.5 4 4.5 5 5.5 6 7 VGE = 4.5V PULSE DURATION = 100µs 6 ICE = 150A 5 ICE = 120A 4 ICE = 90A 3 ICE = 60A 2 -40 TC, CASE TEMPERATURE (°C) -20 0 20 40 60 80 100 120 140 TC, CASE TEMPERATURE (°C) Figure 5. Collector to Emitter Saturation Voltage vs Case Temperature Figure 6. Collector to Emitter Saturation Voltage vs Case Temperature 3 FGW15N40A Rev. A2 2 Figure 4. Collector to Emitter On-State Voltage vs Collector Current ICE = 150A -20 5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VGE = 4V PULSE DURATION = 100µs -40 4.5 120 1 8 3 4 TJ = 125°C PULSE DURATION = 100µs 140 6 Figure 3. Collector to Emitter On-State Voltage vs Collector Current 6 3.5 160 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 7 3 Figure 2. Collector to Emitter On-State Voltage vs Collector Current 160 60 2.5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 1. Collector to Emitter On-State Voltage vs Collector Current 140 2 www.fairchildsemi.com FGW15N40A Strobe Flash N-Channel Logic Level IGBT Typical Characteristics DUTY CYCLE < 0.5% PULSE DURATION = 250µs TJ = -40oC VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) 7 6 ICE = 150A ICE = 120A 5 ICE = 90A ICE = 60A 4 3 2 0.5 1 1.5 2 2.5 3 3.5 4 7 DUTY CYCLE < 0.5% PULSE DURATION = 250µs TJ = 25oC 6 ICE = 150A ICE = 120A ICE = 90A 5 ICE = 60A 4 3 2 0.5 1 1.5 VGE, GATE TO EMITTER VOLTAGE (V) DUTY CYCLE < 0.5% PULSE DURATION = 250µs TJ = 70oC 8 ICE = 150A 7 ICE = 120A ICE = 90A 6 ICE = 60A 5 4 3 3 3.5 4 4.5 5 9 DUTY CYCLE < 0.5% PULSE DURATION = 250µs TJ = 125oC 8 ICE = 150A 7 ICE = 120A ICE = 90A 6 ICE = 60A 5 4 3 2 2 0 1 2 3 4 5 6 0 VGE, GATE TO EMITTER VOLTAGE (V) 0.75 1 2 3 4 5 6 7 VGE, GATE TO EMITTER VOLTAGE (V) Figure 9. Collector to Emitter On-State Voltage vs Gate to Emitter Voltage Figure 10. Collector to Emitter On-State Voltage vs Gate to Emitter Voltage 5000 ICE = 1mA VCE = VGE FREQUENCY = 1MHz 0.7 CIES 1000 C, CAPACITANCE (pF) VGE(TH), THRESHOLD VOLTAGE (V) 2.5 Figure 8. Collector to Emitter On-State Voltage vs Gate to Emitter Voltage VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 7. Collector to Emitter On-State Voltage vs Gate to Emitter Voltage 9 2 VGE, GATE TO EMITTER VOLTAGE (V) 0.65 0.6 0.55 0.5 0.45 0.4 -40 COES 100 CRES 10 4 -20 0 20 40 60 80 100 120 140 0.1 TC, CASE TEMPERATURE (°C) Figure 11. Gate to Emitter Threshold Voltage vs Case Temperature 10 100 Figure 12. Capacitance vs Collector to Emitter Voltage 4 FGW15N40A Rev. A2 1 VCE, COLLECTOR TO EMITTER VOLTAGE (V) www.fairchildsemi.com FGW15N40A Strobe Flash N-Channel Logic Level IGBT Typical Characteristics (Continued) 6 3 VCC = 300V, VGE = 4V, RGE = 51Ω, TJ = 25oC VCC = 300V, ICE = 150A, VGE = 4V, TJ = 25oC SWITCHING TIME (µs) SWITCHING TIME (µs) toff tfall 1 ton toff tfall 1 ton trise trise 0.1 0.5 0 25 50 75 100 125 150 0 50 100 Figure 13. Switching Time vs Collector Current 250 300 Figure 14. Switching Time vs Gate Resistance 160 IG(REF) = 1mA, VCC = 300V, RL = 2Ω, TJ = 25oC ICP, COLLECTOR PEAK CURRENT (A) VGE, GATE TO EMITTER VOLTAGE (V) 200 RG, GATE RESISTANCE (Ω) ICE, COLLECTOR TO EMITTER CURRENT (A) 8 150 7 6 5 4 3 2 1 0 TJ = 25°C PULSE DURATION = 100µs 140 120 100 80 60 40 20 0 0 5 10 15 20 25 30 35 40 1 45 1.5 QG, GATE CHARGE (nC) 2 2.5 3 3.5 4 4.5 5 5.5 6 VGE, GATE TO EMITTER VOLTAGE (V) Figure 15. Gate Charge Figure 16. Collector Current Limit vs Gate to Emitter Voltage ZθJA , NORMALIZED THERMAL RESPONSE 2.0 1.0 0.1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 t1 PD 0.01 t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJA X RθJA) + TC SINGLE PULSE 0.001 10-4 10-3 10-2 10-1 100 101 t1 , RECTANGULAR PULSE DURATION (s) Figure 17. Normalized Transient Thermal Impedance, Junction to Case 5 FGW15N40A Rev. A2 www.fairchildsemi.com FGW15N40A Strobe Flash N-Channel Logic Level IGBT Typical Characteristics (Continued) The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 6 FGW15N40A Rev. A2 www.fairchildsemi.com FGW15N40A Strobe Flash N-Channel Logic Level IGBT TRADEMARKS