QEE213 Plastic Infrared Light Emitting Diode Features Description ■ ■ ■ ■ ■ The QEE213 is a 940nm GaAs LED encapsulated in a medium angle, thin plastic sidelooker package. Wavelength = 940 nm, GaAs Package Type: Sidelooker Medium Beam Angle, 50° Clear Plastic Package Matched Photosensors: QSE213 and QSE243 Package Dimensions 0.060 (1.50) 0.174 (4.44) R 0.030 (0.76) 0.047 (1.20) 0.224 (5.71) 0.177 (4.51) 0.030 (0.76) 0.5 (12.7) MIN CATHODE Schematic 0.020 (0.51) SQ. (2X) ANODE 0.100 (2.54) CATHODE NOTES: 1. Dimensions for all drawings are in inches (millimeters). 2. Tolerance of ± .010 (.25) on all non nominal dimensions unless otherwise specified. ©2005 Fairchild Semiconductor Corporation QEE213 Rev. 1.0.0 1 www.fairchildsemi.com QEE213 Plastic Infrared Light Emitting Diode May 2005 Parameter Symbol Rating Unit Operating Temperature TOPR -40 to + 100 °C Storage Temperature TSTG -40 to + 100 °C (Iron)(2,3,4) TSOL-I 240 for 5 sec °C Soldering Temperature (Flow)(2,3) TSOL-F 260 for 10 sec °C Continuous Forward Current IF 100 mA Reverse Voltage VR 5 V Soldering Temperature Peak Forward Current(5) Power Dissipation(1) IFP 1 A PD 100 mW Electrical/Optical Characteristics (TA =25°C) Parameter Test Conditions Symbol Min Typ Max Units Peak Emission Wavelength IF = 100 mA lP — 940 — nm Emission Angle IF = 100 mA U — ±25 — Deg. Forward Voltage IF = 100 mA, tp = 20 ms VF — — 1.5 V Reverse Current VR = 5 V IR — — 10 µA Radiant Intensity IF = 100 mA, tp = 20 ms Ie 2 — — mW/sr Rise Time IF = 100 mA tp = 100 µs, T = 10 mS tr — 1 — µs tf — 1 — Fall Time Notes 1. Derate power dissipation linearly 2.67 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6 mm) minimum from housing. 5. Pulse conditions: tp = 100 µs, T = 10 ms. 2 QEE213 Rev. 1.0.0 www.fairchildsemi.com QEE213 Plastic Infrared Light Emitting Diode Absolute Maximum Ratings (TA = 25°C unless otherwise specified) Fig. 2 Forward Voltage vs. Ambient Temperature Fig. 1 Forward Current vs. Forward Voltage 2.0 IF Pulsed tpw = 100 µs TA = 25°C VF - FORWARD VOLTAGE (V) IF - FORWARD CURRENT (mA) 103 102 101 100 0 1 2 3 4 5 IF = 50 mA 1.5 IF = 100 mA 1.0 IF = 20 mA IF Pulsed tpw = 100 µs Duty Cycle = 0.1% 0.5 0.0 6 -40 VF - FORWARD VOLTAGE (V) 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (˚C) Fig. 3 Normalized Radiant Intensity vs. Forward Current IE - NORMALIZED RADIANT INTENSITY -20 Fig. 4 Radiation Diagram 10 Normalized to: IF = 100 mA Pulsed tpw = 100 µs Duty Cycle = 0.1% TA = 25°C 1 120° 110° 100° 90° 80° 70° 60° 50° 130° 40° 140° 0.1 30° 150° 20° 160° 0.01 10° 170° 180° 1.0 0.001 0 10 100 1000 0.8 0.6 0.4 0.2 0 0.2 0.4 0.6 0.8 0° 1.0 IF - FORWARD CURRENT (mA) 3 QEE213 Rev. 1.0.0 www.fairchildsemi.com QEE213 Plastic Infrared Light Emitting Diode Typical Performance Curves The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 4 QEE213 Rev. 1.0.0 www.fairchildsemi.com QEE213 Plastic Infrared Light Emitting Diode TRADEMARKS