QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor tm Features Description ■ Tight production distribution The QSC112/113/114 is a silicon phototransistor encapsulated in an infrared transparent, black T-1 package. PACKAGE DIMENSIONS ■ Steel lead frames for improved reliability in solder mounting ■ Good optical-to-mechanical alignment ■ Plastic package is infrared transparent black to attenuate visible light ■ Can be used with QECXXX LED ■ Black plastic body allows easy recognition from LED Package Dimensions 0.116 (2.95) REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) EMITTER 0.100 (2.54) NOM Schematic COLLECTOR 0.155 (3.94) 0.018 (0.46) SQ. (2X) Notes: 1. Dimensions of all drawings are in inches (mm). EMITTER 2. Tolerance is ±0.10 (.25) on all non-nominal dimensions unless otherwise specified. ©2005 Fairchild Semiconductor Corporation QSC112, QSC113, QSC114 Rev. 1.0.2 www.fairchildsemi.com QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor April 2007 Symbol Parameter TOPR Operating Temperature TSTG Storage Temperature Rating Units -40 to +100 °C -40 to +100 °C TSOL-I Soldering Temperature (Iron)(2,3,4) 240 for 5 sec °C TSOL-F Soldering Temperature (Flow)(2,3) 260 for 10 sec °C VCE Collector-Emitter Voltage 30 V VEC Emitter-Collector Voltage 5 V 100 mW PD Power Dissipation(1) Notes: 1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6mm) minimum from housing. Electrical/Optical Characteristics (TA =25°C) Symbol Parameter λPS Θ ICEO Test Conditions Min. Typ. Max. Units Peak Sensitivity Wavelength 880 nm Reception Angle ±4 ° Collector-Emitter Dark Current VCE = 10 V, Ee = 0 100 nA BVCEO Collector-Emitter Breakdown IC = 1 mA 30 V BVECO Emitter-Collector Breakdown IE = 100 µA 5 V IC(ON) On-State Collector Current QSC112 Ee = 0.5 mW/cm2, VCE = 5 V(5) On-State Collector Current QSC113 On-State Collector Current QSC114 4 2.40 9.60 mA 4.00 Saturation Voltage Ee = 0.5 mW/cm2, IC = 0.5 mA(5) tr Rise Time VCC = 5 V, RL = 100 Ω, IC = 2 mA tf Fall Time VCE(sat) 1 0.4 5.0 V µs 5.0 Note: 5. λ = 880 nm, AlGaAs. ©2005 Fairchild Semiconductor Corporation QSC112, QSC113, QSC114 Rev. 1.0.2 www.fairchildsemi.com 2 QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor Absolute Maximum Ratings (TA = 25°C unless otherwise specified) Figure 1. Light Current vs. Radiant Intensity 102 Figure 2. Angular Response Curve VCE = 5V GaAs Light Source IC(ON) - Light Current (mA) 110° 100° 90° 80° 70° 120° 60° 130° 50° 1 10 40° 140° 150° 30° 20° 160° 100 10° 170° 180° 1.0 0.6 0.8 0.4 0.2 0.0 0.2 0.4 0.6 0.8 0° 1.0 -1 10 0.1 1 Ee - Radiant Intensity (mW/cm 2) Figure 3. Dark Current vs. Collector - Emitter Voltage Figure 4. Light Current vs. Collector - Emitter Voltage 101 101 I L - Normalized Light Current I CEO - Dark Current (nA) Ie = 1mW/cm 2 100 10-1 10-2 Ie = 0.5mW/cm 2 Ie = 0.2mW/cm 2 100 Ie = 0.1mW/cm 2 10-1 Normalized to: VCE = 5V Ie = 0.5mW/cm 2 TA = 25 oC 10-3 0 5 10 15 20 25 10-2 0.1 30 1 10 VCE - Collector-Emitter Voltage (V) VCE - Collector-Emitter Voltage (V) Figure 5. Dark Current vs. Ambient Temperature 104 I CEO - Normalized Dark Current Normalized to: VCE = 25V 103 VCE = 25V o TA = 25 C VCE = 10V 102 101 100 10-1 25 50 75 100 o TA - Ambient Temperature ( C ) ©2005 Fairchild Semiconductor Corporation QSC112, QSC113, QSC114 Rev. 1.0.2 www.fairchildsemi.com 3 QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor Typical Performance Curves ® ACEx Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ CTL™ Current Transfer Logic™ DOME™ 2 E CMOS™ ® EcoSPARK EnSigna™ FACT Quiet Series™ ® FACT ® FAST FASTr™ FPS™ ® FRFET GlobalOptoisolator™ GTO™ HiSeC™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ MICROCOUPLER™ MicroPak™ MICROWIRE™ Motion-SPM™ MSX™ MSXPro™ OCX™ OCXPro™ ® OPTOLOGIC ® OPTOPLANAR PACMAN™ PDP-SPM™ POP™ ® Power220 ® Power247 PowerEdge™ PowerSaver™ Power-SPM™ ® PowerTrench Programmable Active Droop™ ® QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ ScalarPump™ SMART START™ ® SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ ® The Power Franchise TinyBoost™ TinyBuck™ ® TinyLogic TINYOPTO™ TinyPower™ TinyWire™ TruTranslation™ µSerDes™ ® UHC UniFET™ VCX™ Wire™ ™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Definition Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I26 ©2005 Fairchild Semiconductor Corporation QSC112, QSC113, QSC114 Rev. 1.0.2 www.fairchildsemi.com 4 QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.