QED422, QED423 Plastic Infrared Light Emitting Diode Features Description ■ ■ ■ ■ ■ ■ ■ The QED422/423 is an 880 nm AlGaAs LED encapsulated in a clear, purple tinted, plastic TO-46 package. λ= 880 nm Chip material = AlGaAs Package type: Plastic TO-46 Matched Photosensor: QSD722/723/724 Medium Wide Emission Angle, 30° High Output Power Package material and color: clear, purple tinted, plastic Package Dimensions 0.190 (4.83) 0.178 (4.52) REFERENCE SURFACE 0.220 (5.59) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) CATHODE 0.100 (2.54) NOM Ø 0.215 (5.46) NOM Schematic 0.020 (0.51) SQ. (2X) 45° R 0.022 (0.56) ANODE NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. ©2005 Fairchild Semiconductor Corporation QED422, QED423 Rev. 1.0.0 CATHODE 1 www.fairchildsemi.com QED422, QED423 Plastic Infrared Light Emitting Diode August 2005 Parameter Symbol Rating Unit Operating Temperature TOPR -40 to + 100 °C Storage Temperature TSTG -40 to + 100 °C (Iron)(2,3,4) TSOL-I 240 for 5 sec °C Soldering Temperature (Flow)(2,3) TSOL-F 260 for 10 sec °C Continuous Forward Current IF 100 mA Reverse Voltage VR 5 V PD 200 mW Soldering Temperature Power Dissipation(1) Notes: 1. Derate power dissipation linearly 2.67 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6 mm) minimum from housing Electrical/Optical Characteristics (TA =25°C) Parameter Test Conditions Symbol Min Typ Max Units Peak Emission Wavelength IF = 100 mA λPE — 880 — nm Emission Angle IF = 100 mA 2Θ1/2 — 30 — Deg. Forward Voltage IF = 100 mA, tp = 20 ms VF — — 1.8 V Reverse Current VR = 5 V IR — — 10 µA Radiant Intensity QEC422 IF = 100 mA, tp = 20 ms IE 10 — 40 mW/sr Radiant Intensity QEC423 IF = 100 mA, tp = 20 ms IE 20 — — mW/sr IF = 100 mA tr — 800 — ns tf — 800 — ns Rise Time Fall Time 2 QED422, QED423 Rev. 1.0.0 www.fairchildsemi.com QED422, QED423 Plastic Infrared Light Emitting Diode Absolute Maximum Ratings (TA = 25°C unless otherwise specified) 2.0 IF = 50 mA Normalized to: IF = 100 mA Pulsed tpw = 100 µs Duty Cycle = 0.1 % TA = 25°C 1 VF - FORWARD VOLTAGE (V) Ie - NORMALIZED RADIANT INTENSITY 10 0.1 0.01 IF = 100 mA 1.5 0.5 1 10 100 Normalized to: IF Pulsed tpw = 100 µs Duty Cycle = 0.1 % 0.0 -40 0.001 1000 IF = 10 mA IF = 20 mA 1.0 -20 0 IF - FORWARD CURRENT (mA) 20 40 60 80 100 TA - AMBIENT TEMPERATURE (°C) Fig. 3 Normalized Radiant Intensity vs. Wavelength Fig. 4 Radiation Diagram NORMALIZED RADIANT INTENSITY 1.0 0.9 110 0.8 100 90 80 70 120 0.7 60 130 50 0.6 140 40 0.5 150 0.4 30 160 0.3 0.2 20 170 10 0.1 180 775 800 825 850 875 900 925 0 1.0 950 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 1.0 λ(nm) 3 QED422, QED423 Rev. 1.0.0 www.fairchildsemi.com QED422, QED423 Plastic Infrared Light Emitting Diode Fig. 2 Forward Voltage vs. Ambient Temperature Fig. 1 Normalized Radiant Intensity vs. Forward Current The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ i-Lo™ EnSigna™ ImpliedDisconnect™ FACT™ IntelliMAX™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET SuperSOT™-8 SyncFET™ TinyLogic QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 4 QED422, QED423 Rev. 1.0.0 www.fairchildsemi.com QED422, QED423 Plastic Infrared Light Emitting Diode TRADEMARKS