FAIRCHILD FAN7529

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Application Note AN-6026
Design of Power Factor Correction Circuit Using FAN7529
1. Introduction
FAN7527B; however, the sensing network can cause additional power loss. In the voltage mode, the switch turn-on is
the same as that of the current mode, but the switch turn-off
is determined by an internal ramp signal. The ramp signal is
compared with an error amplifier output and the switch turnon time is controlled to be constant, as shown in Figure 1. If
the turn-on time is constant, the peak inductor current is proportional to the rectified AC line voltage, as shown in Figure
2. In this way, the input current waveform follows the waveform of the input voltage, thereby obtaining a good power
factor. The FAN7529 is a voltage-mode CRM PFC controller. Because the voltage-mode CRM PFC controller does not
need the rectified AC line voltage information, it can save
the power loss of the sensing network.
The FAN7529 is an active power factor correction (PFC)
controller for the boost PFC application that operates in the
critical conduction mode (CRM). The critical conduction
mode boost power factor converter operates at the boundary
of continuous conduction mode and discontinuous conduction mode. The CRM PFC controllers are of two kinds: the
current-mode CRM PFC controller and the voltage-mode
CRM PFC controller. For the current mode, a boost switch is
turned on when the inductor current reaches zero and turned
off when the inductor current meets the desired current reference. In this case, the rectified AC line voltage should be
sensed to generate the current reference, as in the
L
D
VOUT
VOUT
AC
AC
IN
TurnTurn-On
On
S
S
R
R
TurnTurn-Off
Off
Q
Q
OCP
OC P
RSENSE
SENS E
Feedbac
Feedbackk
OVP
OVP
Disable
Ramp
Error Amp
Figure 1. Voltage Mode CRM Boost PFC Circuit
Inductor
Current
MOSFET
Conduction
Gating
Signal
Diode
Conduction
Peak
Inductor
Current
Average
Input
Current
Constant On- time & Variable Off- time
Figure 2. CRM Boost PFC Inductor Current Waveform
© 2006 Fairchild Semiconductor Corporation
Rev. 1.0.4 • 4/25/08
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AN6026
APPLICATION NOTE
Block Diagram
V CC
2.5V
R ef
8
U V LO
V ref
V CC
In ternal
B ias
12V
8.5V
D rive
O utput
D isable
150μ s
Tim er
ZCD
5
1.4V
R
O VP
4
D isable
40k
8pF
0.8V
R am p
S ig nal
3
1
IN V
Q
1.5V
Zero C u rrent
D etector
MOT
OUT
S
6.5V
CS
7
13V
2.675V
0.45V
2.5V
0.35V
C urren t P rotection
C om parator
V ref
1V O ffset
Erro r
A m p lifier
S aw too th
G enerator
Gm
1V~5V
R ange
6
2
GND
COMP
Figure 3. Block Diagram of the FAN7529 showing error amplifier block, zero current detector block, sawtooth
generator block, over-current protection block, and switch drive block
© 2006 Fairchild Semiconductor Corporation
Rev. 1.0.4 • 4/25/09
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2
AN6026
APPLICATION NOTE
2. Device Block Description
the junction capacitor of the MOSFET resonates with the
boost inductor and the auxiliary winding voltage decreases
resonantly. If it reaches 1.4V, the zero current detector turns
on the MOSFET. The ZCD pin is protected internally by two
clamps: the 6.5V HIGH clamp and the 0.65V LOW clamp,
as shown in Figure 5.
2.1 Error Amplifier Block
The error amplifier block consists of a transconductance
amplifier, output OVP comparator, and disable comparator.
For the output voltage control, a transconductance amplifier
is used instead of the conventional voltage amplifier. The
transconductance amplifier (voltage controlled current
source) aids the implementation of OVP and disable function. The output current of the amplifier changes according
to the voltage difference of the inverting input and the noninverting input of the amplifier. The output voltage of the
amplifier is compared with the internal ramp signal to generate the switch turn-off signal. The OVP comparator shuts
down the output drive block when the voltage of the INV pin
is higher than 2.675V and there is 0.175V hysteresis. The
disable comparator disables the operation of the FAN7529
when the voltage of the inverting input is lower than 0.45V
and there is 100mV hysteresis. An external, small-signal
MOSFET can be used to disable the IC, as shown in Figure
4. The IC operating current decreases to under 65µA to
reduce power consumption if the IC is disabled.
Turn-on
Signal
Timer
S
Q
R
VIN
ZCD
5
6.5V
1.4V 1.5V
Zero Current
Detector
Figure 5. Zero Current Detector Block
2.675V
OVP
Disable
0.45V
Gm
2
IPEAK
0.35V
tzero
Inductor
Current
V OUT
Vref (2.5V)
Error
Amp
Figure 6 shows typical ZCD-related waveforms. Because the
ZCD pin has some capacitance, there can be some delay
caused by Rzcd and the turn-on time can be delayed.
2.5V
0A
ton
tdis
INV
toff
1
COMP
INEG
Disable
Signal
n·(V OUT-VIN)
V AUX
0V
-n·VIN
Delay Time
Vclamp
Figure 4. Error Amplifier Block
ZCD
Voltage
V th
2.2 Zero Current Detection Block
R ZCD Delay
OUT
The zero current detector (ZCD) generates the turn-on signal
of the MOSFET when the boost inductor current reaches
zero using an auxiliary winding coupled with the inductor.
Because the polarity of the auxiliary winding is opposite the
inductor winding, the auxiliary winding voltage is negative
and proportional to the rectified AC line voltage when the
MOSFET is turned on. If the MOSFET is turned off, the
voltage becomes positive and proportional to the difference
between VOUT and VIN. If the inductor current reaches zero,
© 2006 Fairchild Semiconductor Corporation
Rev. 1.0.4 • 4/25/09
0V
V OUT
V DS
Minimum
Voltage Turn-on
0V
Figure 6. Zero Current Detector Waveform
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AN6026
APPLICATION NOTE
Ideally, the switch must be turned on when the inductor current reaches zero; but because of the structure of the ZCD
block and Rzcd delay, it is turned on after some delay time.
During this delay time, the stored charge of the COSS (MOSFET output capacitor) is discharged through the path indicated in Figure 7. This charge is transferred into a small filter
capacitor, Cin1, which is connected to the bridge diode.
Therefore, there is no current flow from the input side,
meaning the input current Iin is zero during this period. For
better total harmonic distortion (THD), it is important to
make tzero / TS as small as possible. As shown in Figure 6,
tzero is proportional to L ⋅ C oss but ton and tdis are proportional to L. Therefore tzero / TS is approximately inversely
proportional to L . Therefore THD increases as the inductance decreases. Reducing the inductance can decrease the
inductor size and cost but the switching loss increases
because of the increased switching frequency. In real case,
boost diode’s junction capacitance and boost inductor’s parasitic capacitance should be added to COSS when calculating
tzero. That means it is important to minimize the parasitic
capacitance of the boost inductor and diode junction capacitance for better THD.
iin
L
AC
IN
D
Off Signal
1V Offset
MOT
Sawtooth
Generator
3
2.9V
Error
Amp
Output
Figure 8. Sawtooth Generator Block
2.4 Over-Current Protection Block
The MOSFET current is sensed using an external sense
resistor for over-current protection. If the CS pin voltage is
higher than 0.8V, the over-current protection comparator
generates a protection signal to turn off the MOSFET. An
internal R/C filter has been included to filter switching noise.
OCP
S ig n a l
CS 4
40k
8pF
V OUT
0 .8 V
O v e r-C u rre n t
P ro te c tio n
C o m p a ra to r
iL
C in1
CO
Q
Figure 9. Over-Current Protection Block
C OSS
2.5 Switch Drive Block
The FAN7529 contains a single totem-pole output stage
designed specifically for a direct drive of a power MOSFET.
The drive output is capable of up to 500mA peak sourcing
current and 800mA peak sinking current with a typical rise
and fall time of 50ns with a 1.0nF load. Additional circuitry
has been added to keep the drive output in a sinking mode
whenever the UVLO is active. The output voltage is
clamped at 13V to protect the MOSFET gate even when the
VCC voltage is higher than 13V.
Figure 7. Current Flow During tzero
In the ZCD block, there is an internal timer to provide a
means to start or restart the switching if the drive output has
been low for more than 150µs from the falling edge of the
drive output. Without this timer, the PFC converter does not
work because the inductor current is always zero when the
IC initially starts operation and the ZCD winding voltage
does not become positive without any switching.
2.3 Sawtooth Generator Block
The output of the error amplifier and the output of the sawtooth generator are compared to determine the MOSFET
turn-off instant. The slope of the sawtooth is determined by
an external resistor connected at the maximum on time
(MOT) pin. The voltage of the MOT pin is 2.9V and the
slope is proportional to the current flowing output of the
MOT pin. The maximum on time is determined when the
output of the error amplifier is 5V. When a 40.5kΩ resistor is
connected, the maximum on time is 24µs. As the resistance
increases, the maximum on time increases, because the slope
decreases. The MOSFET on time is zero when the output of
the error amplifier is lower than 1V.
© 2006 Fairchild Semiconductor Corporation
Rev. 1.0.4 • 4/25/09
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AN6026
APPLICATION NOTE
3.Circuit Components Design
3.1 Power Stage Design
4 ⋅ fsw (min)
1) Boost Inductor Design
The boost inductor value is determined by the output power
and the minimum switching frequency. The minimum
switching frequency must be above the audio frequency
(20kHz) to prevent audible noise. The maximum switching
period, TS(max), is a function of Vin(peak) and Vo, the output
voltage. It can have a maximum value at the highest input
voltage or at the lowest input voltage according to Vo. Compare TS(max) at Vin(peak_min) and Vin(peak_max), then select the
higher value for the maximum switching period. The boost
inductor value can be obtained by Equation 6.
ton = L ⋅
IL( peak ) (t )
Vin( peak ) sin(ω t )
= L⋅
= L⋅
toff = L ⋅
= L⋅
2 ⋅ Iin ( peak ) sin(ωt )
Vin( peak ) sin(ω t )
⎞
⎟
⎟
⎠
(6)
The auxiliary winding voltage is lowest at the highest line.
So the turn number of the auxiliary winding can be obtained
by Equation 7. The voltage should be higher than the ZCD
threshold voltage of 1.5V.
1.5V ⋅ NP
Naux >
(1)
(7)
(Vo − 2Vin ( peak _ max) )
3) Input Capacitor Design
The voltage ripple of the input capacitor is maximum when
the line is lowest and the load is heaviest. If fsw(min) >> fac,
the input current can be assumed to be constant during a
switching period.
Vin ( peak )
Inductor
Current
2 ⋅ I in
(2)
Vo − Vin( peak ) sin(ωt )
2 ⋅ Iin ( peak ) sin(ω t )
Input
Current
Vo − Vin( peak ) sin(ω t )
2 ⋅ Vo ⋅ Io
η ⋅ Vin( peak )
I in
t on / 2
(3)
t on
t off
Figure 10. Input Current and Inductor Current Waveform
During a Switch Cycle
TS = ton + toff
⎛
⎞
1
sin(ωt )
= 2 ⋅ L ⋅ Iin( peak ) ⎜
+
⎟ (4)
⎜ Vin ( peak ) Vo − Vin( peak ) sin(ω t ) ⎟
⎝
⎠
Cin ≥
Vin ( peak ) ⋅ sin(ωt ) ⎞
4 ⋅ L ⋅ Vo ⋅ Io ⎛
=
⎜1+
⎟
2 ⎜
η ⋅ Vin( peak ) ⎝ Vo − Vin( peak ) sin(ωt ) ⎟⎠
4 ⋅ L ⋅ Vo ⋅ I o (max) ⎛
Vin ( peak )
=
⎜1+
2
⎜
Vo − Vin ( peak )
η ⋅ Vin ( peak )
⎝
⎛
Vin ( peak )
⋅ Vo ⋅ I o (max) ⎜ 1 +
⎜
V
o − Vin ( peak )
⎝
2) Auxiliary Winding Design
2 ⋅ Iin ( peak )
IL( peak ) (t )
Iin ( peak ) =
TS (max)
η ⋅ Vin ( peak )2
L=
≥
⎞
⎟
⎟
⎠
≥
(5)
2
ton
2
0
ΔVin (max) ∫
Iin( peak _ max)
⎛
⎜⎜ Iin ( peak _ max) − 2
ton
⎝
ton ⋅ Iin ( peak _ max)
2 ⋅ ΔVin (max)
⎞
t ⎟⎟ dt
⎠
(8)
L ⋅ Io2(max) ⋅ Vo2
ΔVin (max) ⋅ Vin3( peak _ min)
The input capacitor must be larger than the value calculated
by Equation 8 and the maximum input capacitance is limited
by the input displacement factor (IDF), defined as IDF≡cosθ.
As shown in Figure 11, the input capacitor generates 90°
© 2006 Fairchild Semiconductor Corporation
Rev. 1.0.4 • 4/25/09
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5
AN6026
APPLICATION NOTE
4) Output Capacitor Design
leading current, which causes phase difference between the
line current and the line voltage. The phase difference
increases as the capacitance of the input capacitor increases.
Therefore, the input capacitor must be smaller than Cin(max)
calculated by Equation 12. Cin(max) is the sum of all the
capacitors connected at the input side.
Va = VA = Vin ( peak ) cos(ω t )
The output capacitor is selected by the relationship between
the input and output power. As shown in Figure 13, the minimum output capacitance is determined by Equation 14.
Iin
ID
+
(9)
+
i A = i a + i c = Ia cos(ω t ) − ω ⋅ Cin ⋅ Vin( peak ) sin(ω t )
LOAD
CO
Vin
ia = Ia cos(ωt )
IO
PFC
−
(10)
VO
−
Figure 12. PFC Configuration
⎛ ω ⋅ Cin ⋅ Vin ( peak ) ⎞
⎟⎟
Ia
⎝
⎠
Ia
=
tan cos−1(IDF )
ω ⋅ Vin( peak )
θ = tan−1 ⎜⎜
Cin (max)
(
=
2 ⋅ Vo ⋅ Io
ω ⋅ Vin2( peak _ max)
(11)
Pin = Iin( rms ) ⋅ Vin ( rms ) ⋅ (1 − cos(2ωt )) = IDVo
)
ID =
(
tan cos−1(IDF )
)
Iin( rms ) ⋅ Vin( rms )
Vo
(1 − cos(2ωt ))
= Io ⋅ (1 − cos(2ω t ) )
(12)
(13)
ID(avg) = IO (1- cos(2ωt))
Lin
iA
ia
iC
+
Cin
VA
−
IO
+
PFC
Circuit
Va
ΔVO =
−
IO
ωCO
VO
Input Filter
Figure 13. Diode Current and Output Voltage Waveform
Im
iA
Co(min) ≥
iC
θ
ia
2π ⋅ fac ⋅ ΔVo(max)
(14)
5) MOSFET and Diode Selection
Re
The maximum MOSFET RMS current is obtained by Equation 15 and the conduction loss of the MOSFET is calculated
by Equation 16. When MOSFET turns on, the MOSFET current rises from zero, so the turn-on loss is negligible. The
MOSFET turn-off loss and the MOSFET discharge loss are
obtained by Equations 17 and 18, respectively. The switching frequency of the critical conduction mode boost PFC
converter varies according to the line and load conditions.
VA
Figure 11. Input Voltage and Current Displacement Due to
Input Filter Capacitance
© 2006 Fairchild Semiconductor Corporation
Rev. 1.0.4 • 4/25/09
Io (max)
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AN6026
APPLICATION NOTE
The switching frequency is the average value during a line
period. The total MOSFET loss can be calculated by Equation 19 and a MOSFET can be selected considering the
MOSFET thermal characteristic.
IQrms = IL( peak _ max)
=
η ⋅ Vin( LL )
1 4 2 ⋅ Vin ( LL )
−
6
9π ⋅ Vo
2
Pon = IQrms
⋅ RDSon
=
R o1
1 4 2 ⋅ Vin ( LL )
−
6
9π ⋅ Vo
2 2 ⋅ Vo ⋅ Io (max)
Pturn −off =
PFC OUT
1
Cp
(15)
4
Coss.Vo ⋅ Vo2 ⋅ fsw
3
+ Pturn −off + Pdisch arg e
Pdisch arg e =
PMOSFET = Pon
Figure 14. Output Voltage Sensing Circuit
(17)
The feedback loop bandwidth must be lower than 20Hz for
the PFC application. If the bandwidth is higher than 20Hz,
the control loop may try to reduce the 120Hz ripple of the
output voltage and the line current may be distorted, decreasing the power factor. A capacitor is connected between
COMP and GND to eliminate the 120Hz ripple voltage by
40dB. If a capacitor is connected between the output of the
error amplifier and the GND, the error amplifier works as an
integrator and the error amplifier compensation capacitor
can be calculated by Equation 23. To improve the power factor, Ccomp must be higher than the calculated value. If the
value is too high, the output voltage control loop may
become slow.
(18)
(19)
The diode average current can be calculated by Equation 20.
The total diode loss can be calculated by Equation 21. Select
a diode considering diode thermal characteristic.
IDavg = Io(max)
(20)
PDiode = Vf ⋅ IDavg
(21)
Ccomp = gm ⋅
3.2 Control Circuit Design
1)
Output Voltage Sensing Resistor and Feedback Loop
Design
© 2006 Fairchild Semiconductor Corporation
Rev. 1.0.4 • 4/25/09
Ro 2
0.01⋅ 2π ⋅ 120Hz ⋅ (Ro1 + Ro 2 )
(23)
To improve the output voltage regulation, a resistor and a
capacitor can be added to a simple integrator, as shown in
Figure 15. The resistor, Rcomp, increases mid-band gain and
the capacitor, Cfilter, which is 1/10~1/5 of the Ccomp, is used
to filter high-frequency noise. The gain of the error amplifier
with the circuit in Figure 15 is shown in Figure 16.
The output voltage sensing resistors, Ro1 and Ro2, are determined by the output voltage at the high line by Equation 22.
The output voltage sensing resistors cause power loss, therefore Ro1 should be higher than 1MΩ. Too high resistance can
cause some delay of the OVP circuit due to internal capacitance (Cp), which may slightly increase the OVP level.
Ro1 Vo _ high − 2.5
=
Ro 2
2.5
R o2
(16)
1
Vo ⋅ IL( peak _ max) ⋅ tf ⋅ fsw
6
2
2 Vo ⋅ Io(max)
⋅ tf ⋅ fsw
3 η ⋅ Vin ( LL )
INV
(22)
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AN6026
APPLICATION NOTE
imize the zero crossing distortion, COSS must be minimized
and a larger inductor should be used. There is a limitation in
minimizing COSS and using a large inductor because a small
MOSFET increases MOSFET conduction loss and a larger
inductor is more expensive.
VOUT
Error
Amp
Ro1
INV
1
Gm
2
INEG =
Ro2
Vref
COMP
IPEAK
Rcomp
Ccomp
Coss
⋅ (Vo − Vin )
L
(25)
tzero
Inductor
Current
Cfilter
0A
ton
tdis
INEG
toff
n·(VOUT-VIN)
Figure 15. Error Amplifier Circuit
VAUX
Integrator
C comp
0V
-n·VIN
Proportional gain
Delay Time
R comp
Vclamp
Freq
ZCD
Voltage
C filter
RZCD Delay
High frequency
Noise filter
Figure 17. ZCD Waveforms
If the RZCD is selected appropriately, the MOSFET can be
turned on when the Vds voltage is minimum to reduce
switching loss. It is recommended to design the RZCD to turn
on the MOSFET when the Vds voltage is minimum.
2) Zero Current Detection Resistor Design
The ZCD current should be less than 10mA; therefore the
zero current detection resistor, RZCD is determined by (24).
To improve the zero crossing distortion, the MOSFET turnon time should be increased near the AC line zero crossing
point. If a resistor is connected between the MOT and the
auxiliary winding, as shown in Figure 19, the function can be
implemented easily. Because the auxiliary winding voltage is
negatively proportional to the input voltage during the MOSFET turn-on time, the current I2 is proportional to the input
voltage (as shown in Figure 19). Therefore, the slope of the
internal ramp changes according to input voltage as the current flowing out of the MOT pin changes, as shown in Figure
20. I2 current is maximum at the highest line voltage and the
zero crossing improvement is best when I2 is 100% ~ 200%
of I1. R2 value should be chosen by experiment.
(24)
Because the ZCD pin has some capacitance, the ZCD resistor and the capacitor cause some delay for ZCD detection, as
shown in Figure 17. Because of this delay, the MOSFET is
not turned on when the inductor current reaches zero and the
MOSFET junction capacitor and the inductor resonate. The
inductor current changes its direction and flows negatively.
The peak value of this negative current is determined by
Equation 25. As shown in Equation 25, the negative current
increases as the input voltage is close to zero and COSS
increases. This negative current decreases average inductor
current and causes zero crossing distortion near the zero
crossing point of the AC line, as shown in Figure 18. To min© 2006 Fairchild Semiconductor Corporation
Rev. 1.0.4 • 4/25/09
0V
OUT
Figure 16. Gain of the Error Amplifier
⎛ N ⋅V
⎞
RZCD = ⎜ aux o − 5.8V ⎟ /10mA
⎜ Np
⎟
⎝
⎠
Vth
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AN6026
APPLICATION NOTE
3) Start-up Circuit Design
To start up the FAN7529, the start-up current must be supplied through a start-up resistor. The resistor value is calculated by Equations 26 and 27. The start-up capacitor must
supply IC operating current before the auxiliary winding
supplies IC operating current, maintaining VCC voltage
higher than the UVLO voltage. The start-up capacitor is
determined by Equation 28.
Output
Voltage
1st
Input
Current
3rd
RST ≤
5th
Vin ( peak _ min) − Vth( st )max
PRST =
CST ≥
Figure 18. Zero Crossing Distortion
(26)
IST max
Vin2( rms _ max)
≤ 1W
(27)
Idcc
2π ⋅ fac ⋅ HY(ST )min
(28)
RST
4) Current Sense Resistor Design
L
AC
IN
VAUX
I2
D
The CS pin voltage is highest when the AC line voltage is
lowest and the output power is maximum. The current sense
resistor is determined by Equations 29 and 31, limiting the
power loss of the resistor to under 1W.
VO
NAUX
RZCD
R2 ZCD
Rsense <
CO
VCC
FAN7529
INV
PRsense
MOT
CS
I1
COMP
R1
0.8V
IL( peak _ max)
η ⋅ Vin( peak _ min)
⎛ Vo ⋅ Io(max)
= 2⋅⎜
⎜ η ⋅ Vin( peak _ min)
⎝
Rsense <
GND
= 0.8V
4 ⋅ Vo ⋅ Io(max)
(29)
2
⎞
⎟ ⋅ Rsense < 1W
⎟
⎠
1 ⎛ η ⋅ Vin ( peak _ min)
⋅⎜
2 ⎜⎝ Vo ⋅ Io (max)
⎞
⎟
⎟
⎠
(30)
2
(31)
Figure 19. Zero Crossing Improvement Circuit
Ramp Slope
Change
Slope
Decrease
VAC
Slope Increase
Veao
On-time Increase
Ramp
Variable On-time
On-time Decrease
Figure 20. On-Time Variation According to VAC
© 2006 Fairchild Semiconductor Corporation
Rev. 1.0.4 • 4/25/09
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AN6026
APPLICATION NOTE
4. Design Example
ZCD pin and the ground to increase the delay time for the
MOSFET minimum voltage turn-on.
A 100W converter is used here to illustrate the design procedure using a design spreadsheet. Enter the system parameters
in the excel file, to get the designed parameters. The system
parameters are as follows:
•
•
•
•
•
•
•
•
•
Maximum output power
Input voltage range
Output voltage
AC line frequency
PFC efficiency
Minimum switching frequency
Input displacement factor (IDF)
Input capacitor ripple voltage
Output voltage ripple
4.7 Start-up Circuit Design
The maximum start-up resistor is 1.63MΩ and the minimum
is 140kΩ, as determined by Equations 26-27. The selection
is 330kΩ. The VCC capacitance must be larger than 7µF, calculated by Equation 28, so the selected value is 47µF.
100W
90Vrms~264Vrms
392V
60Hz
90%
37kHz
0.98
24V
8V
4.8 Current Sense Resistor Design
The maximum current sense resistance is 0.23Ω as a result
of Equation 31 and the selected value is 0.2Ω.
4.9 MOT Resistor Design
The MOT resistor is determined to get the maximum on-time
when the AC line voltage is lowest and the output power is
maximum. The calculated value is 20.44kΩ and the maximum on-time is 12.26µs. To improve THD performance, a
33kΩ resistor is used for the MOT resistor and a 370kΩ
resistor is connected between the MOT pin and the auxiliary
winding. The maximum on-time is determined by Equation
32 and the MOT resistor is determined by Equation 33.
4.1 Inductor Design
The boost inductor is determined by Equation 6. Calculate it
at both the lowest voltage and the highest voltage of the AC
line and choose the lower value. The calculated value in this
example is 403µH. To get the calculated inductor value,
EI30 core is used and the primary winding is 44 turns. The
air gap is 0.6mm at both legs of the EI core. The auxiliary
winding number, determined by Equation 7, is five, but more
windings are used and the number is six.
MOT =
4.2 Input Capacitor Design
2 ⋅ L ⋅ Po
η ⋅ Vin2(rms _ min)
RMOT >
The minimum input capacitance is determined by the input
voltage ripple specification. The calculated minimum input
capacitor value is 0.33µF. The maximum input capacitance
is restricted by the IDF. The calculated value is 0.77µF. The
selected value is 0.63µF (sum of all the capacitors connected
to the input side, C1, C2, C3, C4, and C5).
⋅ 10 −6
MOT
× 1012
600
(32)
(33)
4.10 MOSFET Gate Drive Resistor Design
As shown in Figure 21, noise voltage can be added to the
internal ramp signal during MOSFET turn-on. Because of
this noise, the AC line current waveform can be distorted if
the error amplifier output voltage is close to 1V. It is recommended to use higher resistor for MOSFET turn-on if there
is waveform distortion and use a turn-off diode to speed up
the turn-off process.
4.3 Output Capacitor Design
The minimum output capacitor is determined by Equation 14
and the calculated value is 85µF. The selected value for the
capacitor is 100µF.
4.4 MOSFET and Diode Selection
By calculating Equations 15-19, a 500V/13A MOSFET
FQPF13N50C is selected, and a 600V/1A diode BYV26C is
selected by the result of Equations 20-21.
4.5 Output Voltage Sense Resistor and
Feedback Loop Design
The upper output voltage sense resistor is chosen to be 2MΩ
and the bottom output voltage sense resistor is 12.6kΩ. The
error amplifier compensation capacitance must be larger
than 0.1µF, as calculated by Equation 23. Therefore, 0.22µF
capacitor is used.
Figure 21. Turn-on Noise on Internal Ramp Signal
Figure 22 shows the designed application circuit diagram and
Table 1 shows the 100W demo board components list.
4.6 Zero Current Detection Resistor Design
The calculated value is 3.1kΩ and the selected value is
20kΩ. A 47pF ceramic capacitor is connected between the
© 2006 Fairchild Semiconductor Corporation
Rev. 1.0.4 • 4/25/09
www.fairchildsemi.com
10
AN6026
APPLICATION NOTE
T1
PFC OUTPUT
VAUX
D2
C5
R4
R3
R5
D3
C10
Q1
C11
ZD1
C6
5
R8
C8 C7 R1
ZCD
CS
R11
4
3
MOT
COMP
2
INV
1
C1
F1
C9
FAN7529
R2
V1
GND
C2
LF1
6
7
VCC
8
C3 C4
R6
D1
OUT
NTC
R10
R9
BD
R7
AC INPUT
Figure 22. Application Circuit Schematic
© 2006 Fairchild Semiconductor Corporation
Rev. 1.0.4 • 4/25/09
www.fairchildsemi.com
11
AN6026
APPLICATION NOTE
Table 1. 100W Demo Board Part List (400µH, Wide Input Range Application)
PART#
VALUE
NOTE
PART#
VALUE
Fuse
F1
V1
RT1
NOTE
Capacitor
250V/3A
C1
150nF/275VAC
Box Capacitor
TNR
C2
470nF/275VAC
Box Capacitor
C3,C4
2.2nF/3kV
Ceramic Capacitor
NTC
C6
47µF/25V
Electrolytic Capacitor
10D-9
C7
47nF/50V
Ceramic Capacitor
Resistor
C8
220nF
MLCC
471
470V
R1
42kΩ
1/4W
C9
100µF/450V
Electrolytic Capacitor
R2
370kΩ
1/4W
C10
12nF/100V
Film Capacitor
R3
330kΩ
1/2W
C11
56pF/50V
Ceramic Capacitor
R4
150Ω
1W
R5
20kΩ
1/4W
BD
KBL06
Fairchild
R6
100Ω
1/4W
D1
1N4148
Fairchild
R7
0.2Ω
1/2W
D2
BYV26C
600V/1A
R8
10kΩ
1/4W
D3
SB140
Fairchild
R9
10kΩ
1/4W
ZD1
1N4746
Fairchild
R10
2MΩ
1/4W
R11
12.6kΩ
1/4W
IC1
LF1
Diode
Inductor
T1
400µH(44T:6T)
EI3026
IC
Primary: 0.2φ*10, from Pin 5 to Pin 3
FAN7529
Secondary: 0.2φ, from Pin 2 to Pin 4
Line Filter
MOSFET
38mH
Wire 0.45mm
Q1
FQPF13N50C
500V/13A
Table 2. Performance Data
100W
50W
85VAC
115VAC
230VAC
265VAC
PF
0.998
0.998
0.991
0.985
THD
3.97%
4.43%
5.25%
5.47%
Efficiency
90.3%
92.7%
94.7%
95.2%
PF
0.998
0.997
0.974
0.956
THD
4.81%
5.28%
6.74%
7.67%
Efficiency
90.1%
90.8%
91.7%
92.5%
© 2006 Fairchild Semiconductor Corporation
Rev. 1.0.4 • 4/25/09
www.fairchildsemi.com
12
AN6026
APPLICATION NOTE
Table 3. 100W Demo Board Part List (600µH, Wide Input Range Application)
PART#
VALUE
NOTE
PART#
VALUE
Fuse
F1
V1
RT1
NOTE
Capacitor
250V/3A
C1
150nF/275VAC
Box Capacitor
TNR
C2
470nF/275VAC
Box Capacitor
C3,C4
2.2nF/3kV
Ceramic Capacitor
NTC
C6
47µF/25V
Electrolytic Capacitor
10D-9
C7
100nF/50V
Ceramic Capacitor
Resistor
C8
1µF
MLCC
471
470V
R1
56kΩ
1/4W
C9
100µF/450V
Electrolytic Capacitor
R2
820kΩ
1/4W
C10
12nF/100V
Film Capacitor
R3
330kΩ
1/2W
C11
56pF/50V
Ceramic Capacitor
R4
150Ω
1/2W
R5
20kΩ
1/4W
BD
KBL06
Fairchild
R6
100Ω
1/4W
D1
1N4148
Fairchild
R7
0.2Ω
1/2W
D2
BYV26C
600V/1A
R8
10kΩ
1/4W
D3
SB140
Fairchild
R9
10kΩ
1/4W
ZD1
1N4746
Fairchild
R10
2MΩ
1/4W
R11
12.6kΩ
1/4W
IC1
LF1
Diode
Inductor
T1
600µH(58T:8T)
EI3026
IC
Primary: 0.1φ*30, from Pin 5 to Pin 3
FAN7529
Secondary: 0.2φ, from Pin 2 to Pin 4
Line Filter
MOSFET
38mH
Wire 0.45mm
Q1
FQPF13N50C
500V/13A
Table 4. Performance Data
100W
75W
50W
25W
85VAC
115VAC
230VAC
265VAC
PF
0.998
0.998
0.991
0.985
THD
5.35%
5.64%
5.49%
6.24%
Efficiency
90%
92.8%
94.8%
95.2%
PF
0.999
0.998
0.986
0.977
THD
4.81%
5.28%
6.74%
7.67%
Efficiency
90.7%
92.5%
93.8%
94.4%
PF
0.998
0.997
0.974
0.956
THD
4.37%
4.95%
5.88%
6.22%
Efficiency
90.4%
91.1%
91.8%
92.4%
PF
0.995
0.991
0.925
0.879
THD
7.94%
8.58%
7.86%
8.15%
Efficiency
86.8%
86.3%
86.2%
87.1%
© 2006 Fairchild Semiconductor Corporation
Rev. 1.0.4 • 4/25/09
www.fairchildsemi.com
13
AN6026
APPLICATION NOTE
Table 5. 32W Wide Input Range Application Part List
PART#
VALUE
NOTE
PART#
VALUE
Fuse
F1
V1
RT1
NOTE
Capacitor
250V/1A
C1
47nF/275VAC
Box Capacitor
TNR
C2
220nF/275VAC
Box Capacitor
C3,C4
2.2nF/3kV
Ceramic Capacitor
NTC
C6
22µF/25V
Electrolytic Capacitor
10D-9
C7
47nF/50V
Ceramic Capacitor
Resistor
C8
220nF
MLCC
471
470V
R1
56kΩ
1/4W
C9
33µF/450V
Electrolytic Capacitor
R2
600kΩ
1/4W
C10
12nF/100V
Film Capacitor
R3
330kΩ
1/2W
C11
47pF/50V
Ceramic Capacitor
R4
150Ω
1/2W
R5
33kΩ
1/4W
BD
KBP06M
Fairchild
R6
100Ω
1/4W
D1
1N4148
Fairchild
R7
0.62Ω
1/2W
D2
BYV26C
600V/1A
R8
10kΩ
1/4W
D3
SB140
Fairchild
R9
10kΩ
1/4W
ZD1
1N4746
Fairchild
R10
2MΩ
1/4W
R11
12.6kΩ
1/4W
IC1
LF1
Diode
Inductor
T1
1.88mH(156T:18T)
EI2519
IC
Primary: 0.3φ, from Pin 4 to Pin 2
FAN7529
Secondary: 0.2φ, from Pin 1 to Pin 3
Line Filter
MOSFET
90mH
Wire 0.25mm
Q1
FQPF3N50C
500V/3A
Table 6. Performance Data
32W
24W
16W
8W
85VAC
115VAC
230VAC
265VAC
PF
0.998
0.997
0.987
0.978
THD
5.4%
3.94%
4.59%
5.11%
Efficiency
87.8%
90%
91.5%
92.1%
PF
0.999
0.998
0.98
0.966
THD
3.74%
4.02%
4.93%
4.7%
Efficiency
87.5%
88.8%
89.7%
90.5%
PF
0.998
0.996
0.963
0.937
THD
5.19%
5.28%
5.71%
6.21%
Efficiency
85.7%
86%
86.1%
86.9%
PF
0.994
0.989
0.899
0.836
THD
8.13%
8.6%
8.68%
9.62%
Efficiency
78.4%
77.3%
77%
78.3%
© 2006 Fairchild Semiconductor Corporation
Rev. 1.0.4 • 4/25/09
www.fairchildsemi.com
14
AN6026
APPLICATION NOTE
Table 7. 32W 220VAC Input Application Part List
PART#
VALUE
NOTE
PART#
Fuse
F1
V1
RT1
VALUE
NOTE
Capacitor
250V/1A
C1
47nF/275VAC
Box Capacitor
TNR
C2
267nF/275VAC
Box Capacitor
C3,C4
2.2nF/3kV
Ceramic Capacitor
NTC
C6
22µF/25V
Electrolytic Capacitor
10D-9
C7
47nF/50V
Ceramic Capacitor
Resistor
C8
220nF
MLCC
471
470V
R1
33kΩ
1/4W
C9
33µF/450V
Electrolytic Capacitor
R2
220kΩ
1/4W
C10
12nF/100V
Film Capacitor
R3
330kΩ
1/2W
C11
47pF/50V
Ceramic Capacitor
R4
150Ω
1/2W
R5
31kΩ
1/4W
BD
KBP06M
Fairchild
R6
100Ω
1/4W
D1
1N4148
Fairchild
R7
1.3Ω
1/2W
D2
BYV26C
600V/1A
R8
10kΩ
1/4W
D3
SB140
Fairchild
R9
10kΩ
1/4W
ZD1
1N4746
Fairchild
R10
2MΩ
1/4W
R11
12.6kΩ
1/4W
IC1
LF1
Diode
Inductor
T1
1.88mH(84T:11T)
EI2218
IC
Primary: 0.3φ, from Pin 4 to Pin 2
FAN7529
Secondary: 0.2φ, from Pin 1 to Pin 3
Line Filter
MOSFET
73mH
Wire 0.25mm
Q1
FQPF3N50C
500V/3A
Table 8. Performance Data
176VAC
220VAC
265VAC
PF
0.994
0.989
0.979
THD
6.03%
6.48%
6.62%
Efficiency
90.6%
91.1%
92.2%
PF
0.992
0.984
0.969
THD
6.3%
5.74%
4.2%
Efficiency
88.8%
89.3%
90.5%
PF
0.987
0.97
0.94
THD
5.44%
3.84%
4.11%
Efficiency
85.3%
85.8%
87.5%
PF
0.963
0.917
0.836
THD
4.75%
5.9%
9.64%
Efficiency
76.8%
77.7%
80.5%
32W
24W
16W
8W
© 2006 Fairchild Semiconductor Corporation
Rev. 1.0.4 • 4/25/09
www.fairchildsemi.com
15
AN6026
APPLICATION NOTE
Table 9. 64W Wide Input Range Application Part List
PART#
VALUE
NOTE
PART#
VALUE
Fuse
F1
V1
RT1
NOTE
Capacitor
250V/2A
C1
47nF/275VAC
Box Capacitor
TNR
C2
330nF/275VAC
Box Capacitor
C3,C4
2.2nF/3kV
Ceramic Capacitor
NTC
C6
22µF/25V
Electrolytic Capacitor
10D-9
C7
47nF/50V
Ceramic Capacitor
Resistor
C8
220nF
MLCC
471
470V
R1
56kΩ
1/4W
C9
68µF/450V
Electrolytic Capacitor
R2
820kΩ
1/4W
C10
12nF/100V
Film Capacitor
R3
330kΩ
1/2W
C11
47pF/50V
Ceramic Capacitor
R4
150Ω
1/2W
R5
20kΩ
1/4W
BD
2KBP06M
Fairchild
R6
100Ω
1/4W
D1
1N4148
Fairchild
R7
0.3Ω
1/2W
D2
BYV26C
600V/1A
R8
10kΩ
1/4W
D3
SB140
Fairchild
R9
10kΩ
1/4W
ZD1
1N4746
Fairchild
R10
2MΩ
1/4W
R11
12.6kΩ
1/4W
IC1
LF1
Diode
Inductor
T1
944µH(75T:11T)
EI2820
IC
Primary: 0.3φ, from Pin 5 to Pin 3
FAN7529
Secondary: 0.2φ, from Pin 2 to Pin 4
Line Filter
MOSFET
73mH
Wire 0.35mm
Q1
FQPF6N50
500V/6A
Table 10. Performance Data
64W
48W
32W
16W
85VAC
115VAC
230VAC
265VAC
PF
0.999
0.999
0.992
0.987
THD
3.88%
3.37%
4.61%
5.16%
Efficiency
87.5%
90.5%
92.7%
93.4%
PF
0.999
0.998
0.989
0.981
THD
3.75%
3.66%
4.24%
4.92%
Efficiency
87.9%
89.6%
91.1%
92%
PF
0.998
0.997
0.979
0.964
THD
5.19%
5.28%
5.71%
6.21%
Efficiency
86.9%
87.4%
88.1%
89.4%
PF
0.996
0.993
0.939
0.897
THD
6.86%
7.08%
7.73%
8.6%
Efficiency
81.3%
80.3%
80.9%
82.6%
© 2006 Fairchild Semiconductor Corporation
Rev. 1.0.4 • 4/25/09
www.fairchildsemi.com
16
AN6026
APPLICATION NOTE
Table 11. 64W 220VAC Input Application Part List
PART#
VALUE
NOTE
PART#
Fuse
F1
V1
RT1
VALUE
NOTE
Capacitor
250V/2A
C1
47nF/275VAC
Box Capacitor
TNR
C2
330nF/275VAC
Box Capacitor
C3,C4
2.2nF/3kV
Ceramic Capacitor
NTC
C6
22µF/25V
Electrolytic Capacitor
10D-9
C7
47nF/50V
Ceramic Capacitor
Resistor
C8
220nF
MLCC
471
470V
R1
30kΩ
1/4W
C9
68µF/450V
Electrolytic Capacitor
R2
220kΩ
1/4W
C10
12nF/100V
Film Capacitor
R3
330kΩ
1/2W
C11
56pF/50V
Ceramic Capacitor
R4
150Ω
1/2W
R5
22kΩ
1/4W
BD
2KBP06M
Fairchild
R6
100Ω
1/4W
D1
1N4148
Fairchild
R7
0.7Ω
1/2W
D2
BYV26C
600V/1A
R8
10kΩ
1/4W
D3
SB140
Fairchild
R9
10kΩ
1/4W
ZD1
1N4746
Fairchild
R10
2MΩ
1/4W
R11
12.6kΩ
1/4W
IC1
LF1
Diode
Inductor
T1
944µH(84T:13T)
EI2519
IC
Primary: 0.3φ, from Pin 4 to Pin 2
FAN7529
Secondary: 0.2φ, from Pin 1 to Pin 3
Line Filter
MOSFET
73mH
Wire 0.35mm
Q1
FQPF6N50
500V/6A
176VAC
220VAC
265VAC
PF
0.994
0.991
0.987
THD
8.69%
8.5%
7.24%
Efficiency
91.9%
92.5%
93.4%
PF
0.994
0.99
0.982
THD
7.68%
6.92%
5.17%
Efficiency
90.5%
91.1%
92.2%
PF
0.991
0.983
0.965
THD
6.16%
4.58%
3.57%
Efficiency
87.7%
88.3%
89.9%
PF
0.978
0.949
0.894
THD
4.68%
5.22%
9.44%
Efficiency
80.4%
81.3%
83.8%
Table 12. Performance Data
64W
48W
32W
16W
© 2006 Fairchild Semiconductor Corporation
Rev. 1.0.4 • 4/25/09
www.fairchildsemi.com
17
AN6026
APPLICATION NOTE
Table 13. 100W 220VAC Input Application Part List
PART#
VALUE
NOTE
PART#
Fuse
F1
V1
RT1
VALUE
NOTE
Capacitor
250V/3A
C1
150nF/275VAC
Box Capacitor
TNR
C2
470nF/275VAC
Box Capacitor
C3,C4
2.2nF/3kV
Ceramic Capacitor
NTC
C6
22µF/25V
Electrolytic Capacitor
10D-9
C7
47nF/50V
Ceramic Capacitor
Resistor
C8
220nF
MLCC
471
470V
R1
20kΩ
1/4W
C9
100µF/450V
Electrolytic Capacitor
R2
220kΩ
1/4W
C10
12nF/100V
Film Capacitor
R3
330kΩ
1/2W
C11
47pF/50V
Ceramic Capacitor
R4
150Ω
1/2W
R5
22kΩ
1/4W
BD
KBL06
Fairchild
R6
100Ω
1/4W
D1
1N4148
Fairchild
R7
0.44Ω
1/2W
D2
BYV26C
600V/1A
R8
10kΩ
1/4W
D3
SB140
Fairchild
R9
10kΩ
1/4W
ZD1
1N4746
Fairchild
R10
2MΩ
1/4W
R11
12.6kΩ
1/4W
IC1
LF1
Diode
Inductor
T1
600µH(36T:5T)
EI2519
IC
Primary: 0.35φ, from Pin 5 to Pin 3
FAN7529
Secondary: 0.2φ, from Pin 2 to Pin 4
Line Filter
MOSFET
38mH
Wire 0.45mm
Q1
FQPF13N50C
500V/13A
Table 14. Performance Data
176VAC
220VAC
265VAC
PF
0.996
0.992
0.987
THD
6.18%
6.37%
6.52%
Efficiency
94%
94.6%
95.4%
PF
0.994
0.989
0.980
THD
5.73%
5.48%
4.96%
Efficiency
93.5%
94%
94.9%
PF
0.991
0.980
0.961
THD
5.25%
4.32%
4.84%
Efficiency
91.9%
92.5%
93.4%
PF
0.972
0.938
0.880
THD
6.93%
7.57%
9.1%
Efficiency
87.2%
87.6%
88.9%
100W
75W
50W
25W
© 2006 Fairchild Semiconductor Corporation
Rev. 1.0.4 • 4/25/09
www.fairchildsemi.com
18
AN6026
APPLICATION NOTE
Table 15. 150W Wide Input Range Application Part List
PART#
VALUE
NOTE
PART#
VALUE
Fuse
F1
V1
RT1
NOTE
Capacitor
250V/3A
C1
150nF/275VAC
Box Capacitor
TNR
C2
470nF/275VAC
Box Capacitor
C3,C4
2.2nF/3kV
Ceramic Capacitor
NTC
C6
22µF/25V
Electrolytic Capacitor
10D-9
C7
47nF/50V
Ceramic Capacitor
Resistor
C8
220nF
MLCC
471
470V
R1
56kΩ
1/4W
C9
150µF/450V
Electrolytic Capacitor
R2
720kΩ
1/4W
C10
12nF/100V
Film Capacitor
R3
330kΩ
1/2W
C11
47pF/50V
Ceramic Capacitor
R4
150Ω
1/2W
R5
20kΩ
1/4W
BD
KBU06K
Fairchild
R6
100Ω
1/4W
D1
1N4148
Fairchild
R7
0.11Ω
1/2W
D2
SUF15J
600V/1.5A
R8
10kΩ
1/4W
D3
SB140
Fairchild
R9
10kΩ
1/4W
ZD1
1N4746
Fairchild
R10
2MΩ
1/4W
R11
12.6kΩ
1/4W
IC1
LF1
Diode
Inductor
T1
400µH(64T:10T)
EI3530
IC
Primary: 0.65φ, from Pin 5 to Pin 3
FAN7529
Secondary: 0.2φ, from Pin 2 to Pin 4
Line Filter
MOSFET
33mH
Wire 0.65mm
Q1
FQPF13N50C
500V/13A
Table 16. Performance Data
150W
112.5W
75W
37.5W
85VAC
115VAC
230VAC
265VAC
PF
0.998
0.998
0.994
0.991
THD
5.32%
4.63%
6.23%
7.39%
Efficiency
90.5%
93.3%
95.1%
95.6%
PF
0.999
0.998
0.992
0.989
THD
3.77%
4.28%
5.88%
6.19%
Efficiency
91.3%
93%
94.4%
94.9%
PF
0.999
0.998
0.987
0.977
THD
3.5%
4.58%
4.73%
5.1%
Efficiency
91.2%
91.7%
92.5%
93.4%
PF
0.997
0.996
0.962
0.934
THD
5.372%
5.967%
5.768%
6.487%
Efficiency
87.7%
87.1%
87.4%
88.8%
© 2006 Fairchild Semiconductor Corporation
Rev. 1.0.4 • 4/25/09
www.fairchildsemi.com
19
AN6026
APPLICATION NOTE
Table 17. 150W 220VAC Input Application Part List
PART#
VALUE
NOTE
PART#
Fuse
F1
V1
RT1
VALUE
NOTE
Capacitor
250V/3A
C1
150nF/275VAC
Box Capacitor
TNR
C2
470nF/275VAC
Box Capacitor
C3,C4
2.2nF/3kV
Ceramic Capacitor
NTC
C6
22µF/25V
Electrolytic Capacitor
10D-9
C7
47nF/50V
Ceramic Capacitor
Resistor
C8
220nF
MLCC
471
470V
R1
38kΩ
1/4W
C9
150µF/450V
Electrolytic Capacitor
R2
330kΩ
1/4W
C10
12nF/100V
Film Capacitor
R3
330kΩ
1/2W
C11
47pF/50V
Ceramic Capacitor
R4
150Ω
1/2W
R5
20kΩ
1/4W
BD
KBU06K
Fairchild
R6
100Ω
1/4W
D1
1N4148
Fairchild
R7
0.3Ω
1/2W
D2
BYV26C
600V/1A
R8
10kΩ
1/4W
D3
SB140
Fairchild
R9
10kΩ
1/4W
ZD1
1N4746
Fairchild
R10
2MΩ
1/4W
R11
12.6kΩ
1/4W
IC1
LF1
Diode
Inductor
T1
400µH(28T:4T)
EI3026
IC
Primary: 0.45φ, from Pin 5 to Pin 3
FAN7529
Secondary: 0.2φ, from Pin 2 to Pin 4
Line Filter
MOSFET
38mH
Wire 0.45mm
Q1
FQPF9N50
500V/9A
176VAC
220VAC
265VAC
PF
0.996
0.993
0.99
THD
7.55%
8.24%
8.74%
Efficiency
94.3%
95%
95.8%
PF
0.995
0.992
0.988
THD
7.1%
7.3%
7.49%
Efficiency
93.5%
94.3%
95.1%
PF
0.994
0.989
0.979
THD
6.03%
6.18%
5.47%
Efficiency
92.1%
93.3%
93.7%
PF
0.985
0.968
0.936
THD
6.85%
6.19%
7.12%
Efficiency
88%
88.6%
89.7%
Table 18. Performance Data
150W
112.5W
75W
37.5W
© 2006 Fairchild Semiconductor Corporation
Rev. 1.0.4 • 4/25/09
www.fairchildsemi.com
20
AN6026
APPLICATION NOTE
Table 19. 200W Wide Input Range Application Part List
PART#
VALUE
NOTE
PART#
Fuse
F1
V1
RT1
VALUE
NOTE
Capacitor
250V/5A
C1
470nF/275VAC
Box Capacitor
TNR
C2
470nF/275VAC
Box Capacitor
C3,C4
2.2nF/3kV
Ceramic Capacitor
NTC
C6
47µF/25V
Electrolytic Capacitor
10D-9
C7
47nF/50V
Ceramic Capacitor
Resistor
C8
220nF
MLCC
471
470V
R1
37kΩ
1/4W
C9
220µF/450V
Electrolytic Capacitor
R2
250kΩ
1/4W
C10
12nF/100V
Film Capacitor
R3
330kΩ
1/2W
C11
47pF/50V
Ceramic Capacitor
R4
150Ω
1/2W
R5
20kΩ
1/4W
BD
KBU8K
Fairchild
R6
100Ω
1/4W
D1
1N4148
Fairchild
R7
0.1Ω
1W
D2
SUF30J
600V/3A
R8
10kΩ
1/4W
D3
SB140
Fairchild
R9
10kΩ
1/4W
ZD1
1N4746
Fairchild
R10
2MΩ
1/4W
R11
12.6kΩ
1/4W
IC1
LF1
Diode
Inductor
T1
200µH(30T:3T)
EI3026
IC
Primary: 0.1φ*100, from Pin 5 to Pin 3
FAN7529
Secondary: 0.2φ, from Pin 2 to Pin 4
Line Filter
MOSFET
22mH
Wire 0.7mm
Q1
FDPF20N50
Fairchild
Table 20. Performance Data
200W
150W
100W
85VAC
115VAC
230VAC
265VAC
PF
0.999
0.998
0.993
0.990
THD
3.8%
4.3%
6.5%
6.5%
Efficiency
91.8%
94.8%
96.9%
97.3%
PF
0.999
0.998
0.990
0.985
THD
4.7%
5.2%
7.0%
6.9%
Efficiency
93.3%
95.5%
96.9%
97.0%
PF
0.997
0.996
0.981
0.971
THD
6.5%
7.4%
9.0%
8.5%
Efficiency
94.3%
95.3%
96.2%
96.0%
© 2006 Fairchild Semiconductor Corporation
Rev. 1.0.4 • 4/25/09
www.fairchildsemi.com
21
AN6026
APPLICATION NOTE
Nomenclature
Ccomp: compensation capacitance
Naux: auxiliary winding turn number
CIN: input capacitance
NP: boost inductor turn number
COUT: output capacitance
Pin: input power
CST: start-up capacitance
PO(max): maximum output power
fac: AC line frequency
PO: output power
fsw(max): maximum switching frequency
Rsense: current sense resistance
fsw(min): minimum switching frequency
RST: start-up resistance
fsw: switching frequency
Rzcd: zero current detection resistance
HY(ST) min: minimum UVLO hysteresis
tf: MOSFET current falling time
ID: boost diode current
toff: switch off time
IDavg: diode average current
ton: switch on time
IDrms: diode RMS current
TS: switching period
Iin (peak): input current peak value
Vin (peak): input voltage peak value
Iin (peak_max): maximum of the input current peak value
Vin (peak_low): input voltage peak value at low line
Iin (rms): input current RMS value
Vin (peak_max): maximum input voltage peak value
Iin (t): input current
Vin (peak_min): minimum input voltage peak value
IL (t): inductor current
Vin (rms): input voltage RMS value
IL(peak) (t): inductor current peak value during one switching
Vin (rms_max): maximum input voltage RMS value
cycle
Vin (rms_min): minimum input voltage RMS value
IL(peak): inductor current peak value during one AC line
Vin (t): input voltage
cycle
VO or VOUT: output voltage
IL(peak_max): maximum inductor current peak value
IO (max): maximum output current
ΔVin (max): maximum input voltage ripple
IO: output current
ΔVO (max): maximum output voltage ripple
IQrms: MOSFET RMS current
η: converter efficiency
ω: AC line angular frequency
ISTmax: maximum start-up supply current
L: boost inductance
© 2006 Fairchild Semiconductor Corporation
Rev. 1.0.4 • 4/25/09
www.fairchildsemi.com
22
AN6026
APPLICATION NOTE
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS
WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used
herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or
(b) support or sustain life, or
(c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reason
ably expected to result in significant injury to the user.
© 2006 Fairchild Semiconductor Corporation
Rev. 1.0.4 • 4/25/08
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
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23