FUJITSU MB84VD23381FJ

TM
SPANSION MCP
Data Sheet
September 2003
TM
This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and
Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
these products will be offered to customers of both AMD and Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a SPANSION
revisions will occur when appropriate, and changes will be noted in a revision summary.
TM
product. Future routine
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with "Am" and "MBM". To order these
products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about SPANSION
solutions.
TM
memory
FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-50304-3E
Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM
CMOS
64 M ( × 16) FLASH MEMORY &
16 M ( × 16) Mobile FCRAMTM
MB84VD23381FJ-80
■ FEATURES
• Power Supply Voltage of 2.7 V to 3.1 V
• High Performance
70 ns maximum access time (Flash)
80 ns maximum access time (FCRAM)
• Operating Temperature
−30 °C to +85 °C
• Package 65-ball FBGA
(Continued)
■ PRODUCT LINEUP
Flash Memory
FCRAM
VCCf* = 2.7 V to 3.1 V
VCCr* = 2.7 V to 3.1 V
Max Address Access Time (ns)
70
80
Max CE Access Time (ns)
70
80
Max OE Access Time (ns)
30
40
Power Supply Voltage ( V )
*: Both VCCf and VCCr must be the same level when either part is being accessed.
■ PACKAGE
65-ball plastic FBGA
(BGA-65P-M01)
MB84VD23381FJ-80
(Continued)
1. FLASH MEMORY
• 0.17 µm Process Technology
• Simultaneous Read/Write Operations (Dual Bank)
• FlexBankTM*1
Bank A : 8 Mbit (8 KB × 8 and 64 KB × 15)
Bank B : 24 Mbit (64 KB × 48)
Bank C : 24 Mbit (64 KB × 48)
Bank D : 8 Mbit (8 KB × 8 and 64 KB × 15)
Two virtual Banks are chosen from the combination of four physical banks
Host system can program or erase in one bank, and then read immediately and simultaneously from the other
bank with zero latency between read and write operations.
Read-while-erase
Read-while-program
• Single 3.0 V Read, Program, and Erase
Minimized system level power requirements
• Minimum 100,000 Program/Erase Cycles
• Sector Erase Architecture
Sixteen 4 Kword and one hundred twenty-six 32 Kword sectors in word.
Any combination of sectors can be concurrently erased. It also supports full chip erase.
• HiddenROM Region
256 byte of HiddenROM, accessible through a new “HiddenROM Enable” command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP/ACC Input Pin
At VIL, allows protection of “outermost” 2 × 8 Kbytes on both ends of boot sectors, regardless of sector protection/
unprotection status
At VIH, allows removal of boot sector protection
At VACC, increases program performance
• Embedded EraseTM*2 Algorithms
Automatically preprograms and erases the chip or any sector
• Embedded ProgramTM*2 Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit Feature for Detection of Program or Erase Cycle Completion
• Ready/Busy Output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic Sleep Mode
When addresses remain stable, the device automatically switches itself to low power mode.
• Low VCCf Write Inhibit ≤ 2.5 V
• Program Suspend/Resume
Suspends the program operation to allow a read in another byte
• Erase Suspend/Resume
Suspends the erase operation to allow a read data and/or program in another sector within the same device
• Please Refer to “MBM29DL64DF” Datasheet in Detailed Function
(Continued)
2
MB84VD23381FJ-80
(Continued)
2. FCRAMTM*3
• Power Dissipation
Operating
: 20 mA Max
Standby
: 70 µA Max
Power Down
: 10 µA Max
• Power Down Control by CE2r
• Byte Write Control : LB (DQ7 to DQ0) , UB (DQ15 to DQ8)
• 4 words Address Access Capability.
*1: FlexBankTM is a trademark of Fujitsu Limited, Japan.
*2: Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.
*3: FCRAMTM is a trademark of Fujitsu Limited, Japan.
3
MB84VD23381FJ-80
■ PIN ASSIGNMENT
FBGA
(TOP VIEW)
Marking Side
A10
K10
N.C.
N.C.
A9
C9
D9
E9
F9
G9
H9
K9
N.C.
A15
A21
N.C.
A16
Vccf
Vss
N.C.
B8
C8
D8
E8
F8
G8
H8
J8
A11
A12
A13
A14
N.C.
DQ15
DQ7
DQ14
B7
C7
D7
E7
F7
G7
H7
J7
A8
A19
A9
A10
DQ6
DQ13
DQ12
DQ5
B6
C6
D6
G6
H6
J6
WE
CE2r
A20
DQ4
Vccr
N.C.
B5
C5
D5
G5
H5
J5
WP/ACC
RESET
RY/BY
DQ3
Vccf
DQ11
B4
C4
D4
E4
F4
G4
H4
J4
LB
UB
A18
A17
DQ1
DQ9
DQ10
DQ2
B3
C3
D3
E3
F3
G3
H3
J3
A7
A6
A5
A4
VSS
OE
DQ0
DQ8
A2
C2
D2
E2
F2
G2
H2
K2
N.C.
A3
A2
A1
A0
CEf
CE1r
N.C.
A1
B1
K1
N.C.
N.C.
N.C.
(BGA-65P-M01)
4
MB84VD23381FJ-80
■ PIN DESCRIPTION
Pin Name
Function
Input/Output
A19 to A0
Address Inputs (Common)
I
A21, A20
Address Inputs (Flash)
I
DQ15 to DQ0
CEf
Data Inputs/Outputs (Common)
I/O
Chip Enable (Flash)
I
CE1r
Chip Enable (FCRAM)
I
CE2r
Chip Enable (FCRAM)
I
OE
Output Enable (Common)
I
WE
Write Enable (Common)
I
Ready/Busy Outputs (Flash) Open Drain Output
O
UB
Upper Byte Control (FCRAM)
I
LB
Lower Byte Control (FCRAM)
I
Hardware Reset Pin/Sector Protection Unlock (Flash)
I
Write Protect/Acceleration (Flash)
I
RY/BY
RESET
WP/ACC

N.C.
No Internal Connection
VSS
Device Ground (Common)
Power
VCCf
Device Power Supply (Flash)
Power
VCCr
Device Power Supply (FCRAM)
Power
■ BLOCK DIAGRAM
VCCf
VSS
A21 to A0
RY/BY
A21 to A0
WP/ACC
64 M bit
Flash Memory
RESET
CEf
DQ15 to DQ0
DQ15 to DQ0
VCCr
VSS
A19 to A0
LB
UB
WE
OE
CE1r
CE2r
16 M bit
FCRAM
DQ15 to DQ0
5
MB84VD23381FJ-80
■ DEVICE BUS OPERATIONS
User Bus Operations
CEf CE1r CE2r OE WE
Operation *1, *2
Full Standby
Output Disable *3
Read from Flash *4
Write to Flash
5
Read from FCRAM *
Write to FCRAM
LB
UB DQ7 to DQ0 DQ15 to DQ8 RESET WP/ACC*7
H
H
H
X
X
X
X
High-Z
High-Z
H
L
X
H
H
X
X
High-Z
High-Z
L
H
X
H
H
X
X
High-Z
High-Z
L
H
X
L
H
X
X
DOUT
L
H
X
H
L
X
X
H
L
H
L
H
X
H
L
H
H
L
H
X
H
X
DOUT
H
X
DIN
DIN
H
X
X
DOUT
DOUT
H
X
L
L
DIN
DIN
H
L
High-Z
DIN
H
X
L
H
DIN
High-Z
Temporary Sector
Group
Unprotection *6
X
X
X
X
X
X
X
X
X
VID
X
Flash Hardware
Reset
X
H
H
X
X
X
X
High-Z
High-Z
L
X
Boot Block Sector
Write Protection
X
X
X
X
X
X
X
X
X
X
L
FCRAM Power Down*8
X
X
L
X
X
X
X
X
X
X
X
Legend : L = VIL, H = VIH, X = VIL or VIH. See DC Characteristics for voltage levels.
*1: Other operations except for this indicated table are prohibited.
*2: Do not apply CEf = VIL, CE1r = VIL and CE2r = VIH all at once.
*3: FCRAM Output Disable condition should not be kept longer than 1 µs.
*4: WE can be VIL if OE is VIL, OE at VIH initiates the write operations.
*5: FCRAM Byte control at Read operation is not supported.
*6: It is also used for the extended sector group protections.
*7: Protect “outermost” 2 × 8 Kbytes (4 words) on both ends of the boot block sectors.
*8: Power Down mode can be entered from Standby state and all DQ pins are in High-Z state.
6
MB84VD23381FJ-80
■ ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Rating
Unit
Min
Max
Tstg
−55
+125
°C
TA
−30
+85
°C
VIN
−0.3
VCCf + 0.3
V
VOUT
−0.3
VCCr + 0.3
V
VCCf Supply *1
VCCf
−0.2
+3.6
V
1
VCCr
−0.2
+3.6
V
RESET *
VIN
−0.5
+13.0
V
WP/ACC *3
VIN
−0.5
+10.5
V
Storage Temperature
Ambient Temperature with Power Applied
Voltage with Respect to Ground All pins *1
VCCr Supply *
2
*1: Minimum DC voltage on input or I/O pins is –0.3 V. During voltage transitions, input or I/O pins may undershoot
VSS to –1.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is VCCf+0.3 V or VCCr+0.3 V.
During voltage transitions, input or I/O pins may overshoot to VCCf+1.0 V or VCCr+1.0 V for periods of up to 5 ns.
*2: Minimum DC input voltage on RESET pin is –0.5 V. During voltage transitions, RESET pin may undershoot VSS
to –2.0 V for periods of up to 20 ns.
Voltage difference between input and supply voltage (VIN-VCCf or VCCr) does not exceed 9.0 V.
Maximum DC input voltage on RESET pin is +13.0 V which may overshoot to +14.0 V for periods of up to 20 ns.
*3: Minimum DC input voltage on WP/ACC pin is –0.5 V. During voltage transitions, WP/ACC pin may undershoot
Vss to –2.0 V for periods of up to 20 ns. Maximum DC input voltage on WP/ACC pin is +10.5 V which may
overshoot to +10.5 V for periods of up to 20 ns, when VCCf is applied.
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
■ RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Value
Min
Max
Unit
Ambient Temperature
TA
−30
+85
°C
VCCf Supply Voltages
VCCf
+2.7
+3.1
V
VCCr Supply Voltages
VCCr
+2.7
+3.1
V
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the device’s electrical characteristics are warranted when the device is
operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representatives beforehand.
7
MB84VD23381FJ-80
■ ELECTRICAL CHARACTERISTICS
1. DC Characteristics*1,*2,*3
Parameter
Symbol
Test Conditions
Value
Min
Typ
Max
Unit
Input Leakage Current
ILI
VIN = VSS to VCCf, VCCr
–1.0
—
+1.0
µA
Output Leakage Current
ILO
VOUT = VSS to VCCf, VCCr
–1.0
—
+1.0
µA
RESET Inputs Leakage
Current
ILIT
VCCf = VCCf Max,
RESET = 12.5 V
—
—
35
µA
Flash VCC Active Current
(Read) *4
ICC1f
CEf = VIL, OE = VIH
tCYCLE = 5 MHz
—
—
18
mA
tCYCLE = 1 MHz
—
—
4
mA
Flash VCC Active Current
(Program/Erase) *5
ICC2f
CEf = VIL, OE = VIH
—
—
35
mA
Flash VCC Active Current
(Read-While-Program) *6
ICC3f
CEf = VIL, OE = VIH
—
—
53
mA
Flash VCC Active Current
(Read-While-Erase) *8
ICC4f
CEf = VIL, OE = VIH
—
—
53
mA
Flash VCC Active Current
(Erase-Suspend-Program)*8
ICC5f
CEf = VIL, OE = VIH
—
—
40
mA
WP/ACC Acceleration
Program Current
IACC
VCCf = VCCf Max,
WP/ACC = VACC Max
—
—
20
mA
tRC / tWC = Min
—
15
20
FCRAM VCC Active Current
ICC1r
VCCr = VCCr Max,
CE1r = VIL, CE2r = VIH,
VIN = VIH or VIL,
IOUT = 0 mA
tRC / tWC = 1 µs
—
2.5
3.0
Flash VCC Standby Current
ISB1f
VCCf = VCCf Max, CEf = VCCf ± 0.3 V,
RESET = VCCf ± 0.3 V,
WP/ACC = VCCf ± 0.3 V
—
1
5
µA
Flash VCC Standby Current
(RESET)
ISB2f
VCCf = VCCf Max, RESET = VSS ± 0.3 V,
WP/ACC = VCCf ± 0.3 V
—
1
5
µA
Flash VCC Curren
t (Automatic Sleep Mode) *6
ISB3f
VCCf = VCCf Max, CEf = VSS ± 0.3 V,
RESET = VCCf ± 0.3 V,
WP/ACC = VCCf ± 0.3 V,
VIN = VCCf ± 0.3 V or VSS ± 0.3 V
—
1
5
µA
FCRAM VCC Standby Current
ISBr
VCCr = VCCr Max, CE1r = CE2r = VIH,
VIN = VIH or VIL, IOUT = 0 mA
—
0.5
1
mA
FCRAM VCC Standby Current
ISB1r
VCCr = VCCr Max, CE1r > VCCr – 0.2V,
CE2r > VCCr– 0.2V,
VIN < 0.2 V or VIN> VCCr – 0.2 V,
IOUT = 0 mA
—
—
70
µA
FCRAM VCC Standby
Current *9
ISB2r
VCCr = VCCr Max,CE1r > VCCr – 0.2V,
CE2r > VCCr– 0.2V,
VIN Cycle time = tRC Min, IOUT = 0 mA
—
—
5
mA
FCRAM VCC Power Down
Current
IPDr
VCCr = VCCr Max,
VIN > VCCf – 0.2 V or VIN < 0.2 V,
CE2r < 0.2V, IOUT = 0 mA
—
—
10
µA
mA
(Continued)
8
MB84VD23381FJ-80
(Continued)
Parameter
Value
Symbol
Test Conditions
Input Low Level
VIL
—
Input High Level
VIH
Voltage for Autoselect and
Sector Protection (RESET) *7
VID
—
11.5
—
12.5
V
Voltage for WP/ACC Sector
Protection/Unprotection and
Program Acceleration
VACC
—
8.5
9.0
9.5
V
FCRAM Output Low Level
VOL
VCCr = VCCr Min, IOL =1.0 mA
—
—
0.4
V
FCRAM Output High Level
VOH
VCCr = VCCr Min, IOH = –0.5 mA
2.2
—
—
V
Flash Output Low Level
VOL
VCCf = VCCf Min, IOL = 4.0 mA
—
—
0.45
V
Flash Output High Level
VOH
VCCf = VCCf Min, IOH = –0.1 mA
VCCf–0.4
—
—
V
Flash Low VCC Lock-Out
Voltage
VLKO
2.3
2.4
2.5
V
—
Min
Typ
Max
–0.3
—
0.5
Flash
2.0
FCRAM
2.2
—
—
VCCf+0.3
VCCr+0.3
Unit
V
V
*1 : All voltage are referenced to VSS.
*2 : FCRAM DC characteristics are measured after following POWER-UP timing.
*3 : IOUT depends on the output load conditions.
*4 : The ICC current listed includes both the DC operating current and the frequency dependent component.
*5 : ICC active while Embedded Algorithm (program or erase) is in progress.
*6 : Automatic sleep mode enables the low power mode when address remain stable for 150 ns.
*7 : Applicable for only VCC applying.
*8 : Embedded Algorithm (program or erase) is in progress. (@5 MHz)
*9 : ISB2r depends on VIN cycle time. Please refer to ■ APPENDIX A.
9
MB84VD23381FJ-80
2. AC Characteristics
• CE Timing
Parameter
Symbol
Value
Condition
Min
Standard
CE Recover Time

tCCR

0
ns
CE Hold Time

tCHOLD

3
ns
CE1r High to WE Invalid time for
Standby Entry
—
tCHWX
—
20
ns
• Timing Diagram for alternating FCRAM to Flash
CEf
tCCR
tCCR
CE1r
WE
tCHWX
tCCR
CE2r
10
Unit
JEDEC
tCHOLD
tCCR
MB84VD23381FJ-80
■ 64 M FLASH MEMORY CHARACTERISTICS for MCP
1. FLEXIBLE SECTOR-ERASE ARCHITECTURE on FLASH MEMORY
• Sixteen 4K words, and one hundred twenty-six 32 K words.
• Individual-sector, multiple-sector, or bulk-erase capability.
Bank A
Bank B
SA0 : 8KB (4KW)
SA1 : 8KB (4KW)
SA2 : 8KB (4KW)
SA3 : 8KB (4KW)
SA4 : 8KB (4KW)
SA5 : 8KB (4KW)
SA6 : 8KB (4KW)
SA7 : 8KB (4KW)
SA8 : 64KB (32KW)
SA9 : 64KB (32KW)
SA10 : 64KB (32KW)
SA11 : 64KB (32KW)
SA12 : 64KB (32KW)
SA13 : 64KB (32KW)
SA14 : 64KB (32KW)
SA15 : 64KB (32KW)
SA16 : 64KB (32KW)
SA17 : 64KB (32KW)
SA18 : 64KB (32KW)
SA19 : 64KB (32KW)
SA20 : 64KB (32KW)
SA21 : 64KB (32KW)
SA22 : 64KB (32KW)
SA23 : 64KB (32KW)
SA24 : 64KB (32KW)
SA25 : 64KB (32KW)
SA26 : 64KB (32KW)
SA27 : 64KB (32KW)
SA28 : 64KB (32KW)
SA29 : 64KB (32KW)
SA30 : 64KB (32KW)
SA31 : 64KB (32KW)
SA32 : 64KB (32KW)
SA33 : 64KB (32KW)
SA34 : 64KB (32KW)
SA35 : 64KB (32KW)
SA36 : 64KB (32KW)
SA37 : 64KB (32KW)
SA38 : 64KB (32KW)
SA39 : 64KB (32KW)
SA40 : 64KB (32KW)
SA41 : 64KB (32KW)
SA42 : 64KB (32KW)
SA43 : 64KB (32KW)
SA44 : 64KB (32KW)
SA45 : 64KB (32KW)
SA46 : 64KB (32KW)
SA47 : 64KB (32KW)
SA48 : 64KB (32KW)
SA49 : 64KB (32KW)
SA50 : 64KB (32KW)
SA51 : 64KB (32KW)
SA52 : 64KB (32KW)
SA53 : 64KB (32KW)
SA54 : 64KB (32KW)
SA55 : 64KB (32KW)
SA56 : 64KB (32KW)
SA57 : 64KB (32KW)
SA58 : 64KB (32KW)
SA59 : 64KB (32KW)
SA60 : 64KB (32KW)
SA61 : 64KB (32KW)
SA62 : 64KB (32KW)
SA63 : 64KB (32KW)
SA64 : 64KB (32KW)
SA65 : 64KB (32KW)
SA66 : 64KB (32KW)
SA67 : 64KB (32KW)
SA68 : 64KB (32KW)
SA69 : 64KB (32KW)
SA70 : 64KB (32KW)
Word Mode
000000h
001000h
002000h
003000h
004000h
005000h
006000h
007000h
008000h
010000h
018000h
020000h
028000h
030000h
038000h
040000h
048000h
050000h
058000h
060000h
068000h
070000h
078000h
080000h
088000h
090000h
098000h
0A0000h
0A8000h
0B0000h
0B8000h
0C0000h
0C8000h
0D0000h
0D8000h
0E0000h
0E8000h
0F0000h
0F8000h
100000h
108000h
110000h
118000h
120000h
128000h
130000h
138000h
140000h
148000h
150000h
158000h
160000h
168000h
170000h
178000h
180000h
188000h
190000h
198000h
1A0000h
1A8000h
1B0000h
1B8000h
1C0000h
1C8000h
1D0000h
1D8000h
1E0000h
1E8000h
1F0000h
1F8000h
1FFFFFh
Bank C
Bank D
SA71 : 64KB (32KW)
SA72 : 64KB (32KW)
SA73 : 64KB (32KW)
SA74 : 64KB (32KW)
SA75 : 64KB (32KW)
SA76 : 64KB (32KW)
SA77 : 64KB (32KW)
SA78 : 64KB (32KW)
SA79 : 64KB (32KW)
SA80 : 64KB (32KW)
SA81 : 64KB (32KW)
SA82 : 64KB (32KW)
SA83 : 64KB (32KW)
SA84 : 64KB (32KW)
SA85 : 64KB (32KW)
SA86 : 64KB (32KW)
SA87 : 64KB (32KW)
SA88 : 64KB (32KW)
SA89 : 64KB (32KW)
SA90 : 64KB (32KW)
SA91 : 64KB (32KW)
SA92 : 64KB (32KW)
SA93 : 64KB (32KW)
SA94 : 64KB (32KW)
SA95 : 64KB (32KW)
SA96 : 64KB (32KW)
SA97 : 64KB (32KW)
SA98 : 64KB (32KW)
SA99 : 64KB (32KW)
SA100 : 64KB (32KW)
SA101 : 64KB (32KW)
SA102 : 64KB (32KW)
SA103 : 64KB (32KW)
SA104 : 64KB (32KW)
SA105 : 64KB (32KW)
SA106 : 64KB (32KW)
SA107 : 64KB (32KW)
SA108 : 64KB (32KW)
SA109 : 64KB (32KW)
SA110 : 64KB (32KW)
SA111 : 64KB (32KW)
SA112 : 64KB (32KW)
SA113 : 64KB (32KW)
SA114 : 64KB (32KW)
SA115 : 64KB (32KW)
SA116 : 64KB (32KW)
SA117 : 64KB (32KW)
SA118 : 64KB (32KW)
SA119 : 64KB (32KW)
SA120 : 64KB (32KW)
SA121 : 64KB (32KW)
SA122 : 64KB (32KW)
SA123 : 64KB (32KW)
SA124 : 64KB (32KW)
SA125 : 64KB (32KW)
SA126 : 64KB (32KW)
SA127 : 64KB (32KW)
SA128 : 64KB (32KW)
SA129 : 64KB (32KW)
SA130 : 64KB (32KW)
SA131 : 64KB (32KW)
SA132 : 64KB (32KW)
SA133 : 64KB (32KW)
SA134 : 8KB (4KW)
SA135 : 8KB (4KW)
SA136 : 8KB (4KW)
SA137 : 8KB (4KW)
SA138 : 8KB (4KW)
SA139 : 8KB (4KW)
SA140 : 8KB (4KW)
SA141 : 8KB (4KW)
Word Mode
200000h
208000h
210000h
218000h
220000h
228000h
230000h
238000h
240000h
248000h
250000h
258000h
260000h
268000h
270000h
278000h
280000h
288000h
290000h
298000h
2A0000h
2A8000h
2B0000h
2B8000h
2C0000h
2C8000h
2D0000h
2D8000h
2E0000h
2E8000h
2F0000h
2F8000h
300000h
308000h
310000h
318000h
320000h
328000h
330000h
338000h
340000h
348000h
350000h
358000h
360000h
368000h
370000h
378000h
380000h
388000h
390000h
398000h
3A0000h
3A8000h
3B0000h
3B8000h
3C0000h
3C8000h
3D0000h
3D8000h
3E0000h
3E8000h
3F0000h
3F8000h
3F9000h
3FA000h
3FB000h
3FC000h
3FD000h
3FE000h
3FF000h
3FFFFFh
Sector Architecture
11
MB84VD23381FJ-80
FlexBankTM Architecture
Bank 1
Bank 2
Bank
Splits
Volume
Combination
Volume
Combination
1
8 Mbit
Bank A
56 Mbit
Remainder (Bank B, C, D)
2
24 Mbit
Bank B
40 Mbit
Remainder (Bank A, C, D)
3
24 Mbit
Bank C
40 Mbit
Remainder (Bank A, B, D)
4
8 Mbit
Bank D
56 Mbit
Remainder (Bank A, B, C)
Example of Virtual Banks Combination
Bank 1
Bank
Splits Volume Combination
Sector Size
Volume
1
8 Mbit
Bank A
8 × 8 Kbyte/4 Kword
+
56 Mbit
15 × 64 Kbyte/32 Kword
2
16 Mbit
Bank A
+
Bank D
16 × 8 Kbyte/4 Kword
+
48 Mbit
30 × 64 Kbyte/32 Kword
3
24 Mbit
Bank B
48 × 64 Kbyte/32 Kword 40 Mbit
4
32 Mbit
Bank A
+
Bank B
8 × 8 Kbyte/4 Kword
+
32 Mbit
63 × 64 Kbyte/32 Kword
Bank 2
Combination
Sector Size
Bank B
+
8 × 8 Kbyte/4 Kword
Bank C
+
+
111 × 64 Kbyte/32 Kword
Bank D
Bank B
+
96 × 64 Kbyte/32 Kword
Bank C
Bank A
+
16 × 8 Kbyte/4 Kword
+
Bank C
+
78 × 64 Kbyte/32 Kword
Bank D
Bank C
8 × 8 Kbyte/4 Kword
+
+
Bank D
63 × 64 Kbyte/32 Kword
Note : When multiple sector erase over several banks is operated, the system cannot read out of the bank to which
a sector being erased belongs. For example, suppose that erasing is taking place at both Bank A and Bank B,
neither Bank A nor Bank B is read out (they would output the sequence flag once they were selected.)
Meanwhile the system would get to read from either Bank C or Bank D.
Simultaneous Operation
Case
1
2
3
4
5
6
7
Bank 1 Status
Read mode
Read mode
Read mode
Read mode
Autoselect mode
Program mode
Erase mode *
Bank 2 Status
Read mode
Autoselect mode
Program mode
Erase mode *
Read mode
Read mode
Read mode
* : By writing erase suspend command on the bank address of sector being erased, the erase operation gets
suspended so that it enables reading from or programming the remaining sectors.
Note: Bank 1 and Bank 2 are divided for the sake of convenience at Simultaneous Operation. Actually, the Bank
consists of 4 banks, Bank A, Bank B, BankC and Bank D. Bank Address (BA) meant to specify each of the
Banks.
12
MB84VD23381FJ-80
Sector Address Tables
Sector Address
Bank
Bank A
Sector
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
SA8
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
SA19
SA20
SA21
SA22
Bank Address
A21
A20
A19
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Address Range
A18
A17
A16
A15
A14
A13
A12
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
0
0
0
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
0
0
0
0
0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
0
0
0
1
1
1
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
0
1
1
0
0
1
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
1
0
1
0
1
0
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
Word Mode
000000h to 000FFFh
001000h to 001FFFh
002000h to 002FFFh
003000h to 003FFFh
004000h to 004FFFh
005000h to 005FFFh
006000h to 006FFFh
007000h to 007FFFh
008000h to 00FFFFh
010000h to 017FFFh
018000h to 01FFFFh
020000h to 027FFFh
028000h to 02FFFFh
030000h to 037FFFh
038000h to 03FFFFh
040000h to 047FFFh
048000h to 04FFFFh
050000h to 057FFFh
058000h to 05FFFFh
060000h to 067FFFh
068000h to 06FFFFh
070000h to 077FFFh
078000h to 07FFFFh
(Continued)
13
MB84VD23381FJ-80
(Continued)
Sector Address
Bank
Bank B
Sector
SA23
SA24
SA25
SA26
SA27
SA28
SA29
SA30
SA31
SA32
SA33
SA34
SA35
SA36
SA37
SA38
SA39
SA40
SA41
SA42
SA43
SA44
SA45
SA46
SA47
SA48
SA49
SA50
SA51
SA52
SA53
SA54
SA55
SA56
SA57
SA58
SA59
SA60
SA61
SA62
SA63
SA64
SA65
SA66
SA67
SA68
SA69
SA70
Bank Address
A21
A20
A19
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Address Range
A18
A17
A16
A15
A14
A13
A12
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
Word Mode
080000h to 087FFFh
088000h to 08FFFFh
090000h to 097FFFh
098000h to 09FFFFh
0A0000h to 0A7FFFh
0A8000h to 0AFFFFh
0B0000h to 0B7FFFh
0B8000h to 0BFFFFh
0C0000h to 0C7FFFh
0C8000h to 0CFFFFh
0D0000h to 0D7FFFh
0D8000h to 0DFFFFh
0E0000h to 0E7FFFh
0E8000h to 0EFFFFh
0F0000h to 0F7FFFh
0F8000h to 0FFFFFh
100000h to 107FFFh
108000h to 10FFFFh
110000h to 117FFFh
118000h to 11FFFFh
120000h to 127FFFh
128000h to 12FFFFh
130000h to 137FFFh
138000h to 13FFFFh
140000h to 147FFFh
148000h to 14FFFFh
150000h to 157FFFh
158000h to 15FFFFh
160000h to 167FFFh
168000h to 16FFFFh
170000h to 177FFFh
178000h to 17FFFFh
180000h to 187FFFh
188000h to 18FFFFh
190000h to 197FFFh
198000h to 19FFFFh
1A0000h to 1A7FFFh
1A8000h to 1AFFFFh
1B0000h to 1B7FFFh
1B8000h to 1BFFFFh
1C0000h to 1C7FFFh
1C8000h to 1CFFFFh
1D0000h to 1D7FFFh
1D8000h to 1DFFFFh
1E0000h to 1E7FFFh
1E8000h to 1EFFFFh
1F0000h to 1F7FFFh
1F8000h to 1FFFFFh
(Continued)
14
MB84VD23381FJ-80
(Continued)
Sector Address
Bank
Bank C
Sector
SA71
SA72
SA73
SA74
SA75
SA76
SA77
SA78
SA79
SA80
SA81
SA82
SA83
SA84
SA85
SA86
SA87
SA88
SA89
SA90
SA91
SA92
SA93
SA94
SA95
SA96
SA97
SA98
SA99
SA100
SA101
SA102
SA103
SA104
SA105
SA106
SA107
SA108
SA109
SA110
SA111
SA112
SA113
SA114
SA115
SA116
SA117
SA118
Bank Address
A21
A20
A19
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Address Range
A18
A17
A16
A15
A14
A13
A12
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
Word Mode
200000h to 207FFFh
208000h to 20FFFFh
210000h to 217FFFh
218000h to 21FFFFh
220000h to 227FFFh
228000h to 22FFFFh
230000h to 237FFFh
238000h to 23FFFFh
240000h to 247FFFh
248000h to 24FFFFh
250000h to 257FFFh
258000h to 25FFFFh
260000h to 267FFFh
268000h to 26FFFFh
270000h to 277FFFh
278000h to 27FFFFh
280000h to 287FFFh
288000h to 28FFFFh
290000h to 297FFFh
298000h to 29FFFFh
2A0000h to 2A7FFFh
2A8000h to 2AFFFFh
2B0000h to 2B7FFFh
2B8000h to 2BFFFFh
2C0000h to 2C7FFFh
2C8000h to 2CFFFFh
2D0000h to 2D7FFFh
2D8000h to 2DFFFFh
2E0000h to 2E7FFFh
2E8000h to 2EFFFFh
2F0000h to 2F7FFFh
2F8000h to 2FFFFFh
300000h to 307FFFh
308000h to 30FFFFh
310000h to 317FFFh
318000h to 31FFFFh
320000h to 327FFFh
328000h to 32FFFFh
330000h to 337FFFh
338000h to 33FFFFh
340000h to 347FFFh
348000h to 34FFFFh
350000h to 357FFFh
358000h to 35FFFFh
360000h to 367FFFh
368000h to 36FFFFh
370000h to 377FFFh
378000h to 37FFFFh
(Continued)
15
MB84VD23381FJ-80
(Continued)
Sector Address
Bank
Bank D
16
Sector
SA119
SA120
SA121
SA122
SA123
SA124
SA125
SA126
SA127
SA128
SA129
SA130
SA131
SA132
SA133
SA134
SA135
SA136
SA137
SA138
SA139
SA140
SA141
Bank Address
A21
A20
A19
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Address Range
A18
A17
A16
A15
A14
A13
A12
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
1
1
1
1
1
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
1
1
1
1
1
1
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
0
0
0
1
1
1
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
0
1
1
0
0
1
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
1
0
1
0
1
0
1
Word Mode
380000h to 387FFFh
388000h to 38FFFFh
390000h to 397FFFh
398000h to 39FFFFh
3A0000h to 3A7FFFh
3A8000h to 3AFFFFh
3B0000h to 3B7FFFh
3B8000h to 3BFFFFh
3C0000h to 3C7FFFh
3C8000h to 3CFFFFh
3D0000h to 3D7FFFh
3D8000h to 3DFFFFh
3E0000h to 3E7FFFh
3E8000h to 3EFFFFh
3F0000h to 3F7FFFh
3F8000h to 3F8FFFh
3F9000h to 3F9FFFh
3FA000h to 3FAFFFh
3FB000h to 3FBFFFh
3FC000h to 3FCFFFh
3FD000h to 3FDFFFh
3FE000h to 3FEFFFh
3FF000h to 3FFFFFh
MB84VD23381FJ-80
Sector Group Addresses
Sector Group
SGA0
SGA1
SGA2
SGA3
SGA4
SGA5
SGA6
SGA7
A21
0
0
0
0
0
0
0
0
A20
0
0
0
0
0
0
0
0
A19
0
0
0
0
0
0
0
0
A18
0
0
0
0
0
0
0
0
A17
0
0
0
0
0
0
0
0
SGA8
0
0
0
0
0
SGA9
SGA10
SGA11
SGA12
SGA13
SGA14
SGA15
SGA16
SGA17
SGA18
SGA19
SGA20
SGA21
SGA22
SGA23
SGA24
SGA25
SGA26
SGA27
SGA28
SGA29
SGA30
SGA31
SGA32
SGA33
SGA34
SGA35
SGA36
SGA37
SGA38
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
SGA39
1
1
1
1
1
SGA40
SGA41
SGA42
SGA43
SGA44
SGA45
SGA46
SGA47
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
A16
0
0
0
0
0
0
0
0
0
1
1
A15
0
0
0
0
0
0
0
0
1
0
1
A14
0
0
0
0
1
1
1
1
A13
0
0
1
1
0
0
1
1
A12
0
1
0
1
0
1
0
1
Sectors
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
X
X
X
SA8 to SA10
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
SA11 to SA14
SA15 to SA18
SA19 to SA22
SA23 to SA26
SA27 to SA30
SA31 to SA34
SA35 to SA38
SA39 to SA42
SA43 to SA46
SA47 to SA50
SA51 to SA54
SA55 to SA58
SA59 to SA62
SA63 to SA66
SA67 to SA70
SA71 to SA74
SA75 to SA78
SA79 to SA82
SA83 to SA86
SA87 to SA90
SA91 to SA94
SA95 to SA98
SA99 to SA102
SA103 to SA106
SA107 to SA110
SA111 to SA114
SA115 to SA118
SA119 to SA122
SA123 to SA126
SA127 to SA130
0
0
1
1
1
1
1
1
1
1
1
0
1
0
1
1
1
1
1
1
1
1
X
X
X
SA131 to SA133
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
SA134
SA135
SA136
SA137
SA138
SA139
SA140
SA141
17
MB84VD23381FJ-80
Flash Memory Autoselect Codes
Type
A21 to A12
A6
A3
A2
A1
A0
Code (HEX)
Manufacture’s Code
BA
L
L
L
L
L
04h
Device Code
BA
L
L
L
L
H
227Eh
Extended Device
Code *2
BA
L
H
H
H
L
2202h
BA
L
H
H
H
H
2201h
Sector Group
Addresses
L
L
L
H
L
01h*1
Sector Group
Protection
Legend: L = VIL, H = VIH. See DC Characteristics for voltage levels.
*1 : Outputs 01h at protected sector group addresses and outputs 00h at unprotected sector group addresses.
*2 : A read cycle at address (BA) 01h outputs device code. When 227Eh was output, this indicates that there will
require two additional codes, called Extended Device Codes. Therefore the system may continue reading out
these Extended Device Codes at the address of (BA) 0Eh, as well as at (BA) 0Fh.
18
MB84VD23381FJ-80
Flash Memory Command Definitions
Fourth Bus
Read/Write
Cycle
Bus
Write
Cycles
Req’d
First Bus
Write Cycle
Second Bus
Write Cycle
Third Bus
Write Cycle
Fifth Bus
Write Cycle
Sixth Bus
Write Cycle
Addr.
Data
Addr.
Data
Addr.
Data
Addr.
Data
Addr.
Data
Addr.
Data
Read/Reset
1
XXXh
F0h
—
—
—
—
—
—
—
—
—
—
Read/Reset
3
555h
AAh
2AAh
55h
555h
F0h
RA
RD
—
—
—
—
Autoselect
3
555h
AAh
2AAh
55h
(BA)
555h
90h
—
—
—
—
—
—
Program
4
555h
AAh
2AAh
55h
555h
A0h
PA
PD
—
—
—
—
Program
Suspend
1
BA
B0h
—
—
—
—
—
—
—
—
—
—
Program
Resume
1
BA
30h
—
—
—
—
—
—
—
—
—
—
Chip Erase
6
555h
AAh
2AAh
55h
555h
80h
555h
AAh
2AAh
55h
555h
10h
Sector
Erase
6
555h
AAh
2AAh
55h
555h
80h
555h
AAh
2AAh
55h
SA
30h
Erase
Suspend
1
BA
B0h
—
—
—
—
—
—
—
—
—
—
Erase
Resume
1
BA
30h
—
—
—
—
—
—
—
—
—
—
Extended
Sector
Group
Protection *2
4
XXXh
60h
SPA
60h
SPA
40h
SPA
SD
—
—
—
—
Set to
Fast Mode
3
555h
AAh
2AAh
55h
555h
20h
—
—
—
—
—
—
Fast
Program *1
2
XXXh
A0h
PA
PD
—
—
—
—
—
—
—
—
Reset from
Fast Mode *1
2
BA
90h
XXXh
—
—
—
—
—
—
—
—
Query
1
(BA)
55h
98h
—
—
—
—
—
—
—
—
—
—
HiddenROM
Entry
3
555h
AAh
2AAh
55h
555h
88h
—
—
—
—
—
—
HiddenROM
Program *3
4
555h
AAh
2AAh
55h
555h
A0h
(HRA)
PA
PD
—
—
—
—
HiddenROM
Exit *3
4
555h
AAh
2AAh
55h
90h
XXXh
00h
—
—
—
—
Command
Sequence
*4
F0h
(HRBA)
555h
(Continued)
19
MB84VD23381FJ-80
(Continued)
*1: This command is valid while Fast Mode.
*2: This command is valid while RESET = VID.
*3: This command is valid while HiddenROM mode.
*4: The data “00h” is also acceptable.
Notes : • Address bits A21 to A11 = X = “H” or “L” for all address commands except or Program Address (PA),
Sector Address (SA), and Bank Address (BA), and Sector Group Address (SPA).
• Bus operations are defined in ■ DEVICE BUS OPERATION.
• RA
= Address of the memory location to be read
PA
= Address of the memory location to be programmed Addresses are latched on the falling edge
of the write pulse.
SA
= Address of the sector to be erased. The combination of A21, A20, A19, A18, A17, A16, A15, A14, A13,
and A12 will uniquely select any sector.
BA
= Bank Address (A21, A20, A19)
• RD
= Data read from location RA during read operation.
PD
= Data to be programmed at location PA. Data is latched on the falling edge of write pulse.
• SPA = Sector group address to be protected. Set sector group address and (A6, A3, A2, A1, A0) = (0,
0, 0, 1, 0).
SD
= Sector group protection verify data. Output 01h at protected sector group addresses and output
00h at unprotected sector group addresses.
• HRA = Address of the HiddenROM area: 000000h to 00007Fh
• HRBA = Bank Address of the HiddenROM area (A21 = A20 = A19 = VIL)
• The system should generate the following address patterns: 555h or 2AAh to addresses A10 to A0
• Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.
• Command combinations not described in “Flash Memory Command Definitions” are illegal.
20
MB84VD23381FJ-80
2. AC Characteristics
• Read Only Operations Characteristics (Flash)
Symbol
Parameter
JEDEC
Standard
Condition
Value*
Min
Max
Unit
Read Cycle Time
tAVAV
tRC
—
70
—
ns
Address to Output Delay
tAVQV
tACC
CEf = VIL
OE = VIL
—
70
ns
Chip Enable to Output Delay
tELQV
tCEf
OE = VIL
—
70
ns
Output Enable to Output Delay
tGLQV
tOE
—
—
30
ns
Chip Enable to Output High-Z
tEHQZ
tDF
—
—
25
ns
Output Enable to Output High-Z
tGHQZ
tDF
—
—
25
ns
Output Hold Time From Addresses,
CEf or OE, Whichever Occurs First
tAXQX
tOH
—
0
—
ns
—
tREADY
—
—
20
µs
RESET Pin Low to Read Mode
*: Test Conditions–Output Load : 1 TTL gate and 30 pF
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V to VCCf
Timing measurement reference level
Input: 0.5×VCCf
Output: 0.5×VCCf
21
MB84VD23381FJ-80
• Read Operation Timing Diagram (Flash)
tRC
Address
Address Stable
tACC
CEf
tOE
tDF
OE
tOEH
WE
tOH
tCE
High-Z
High-Z
Outputs Valid
Outputs
• Hardware Reset/Read Operation Timing Diagram (Flash)
tRC
Address
Address Stable
tACC
CEf
tRH
tRP
tRH
tCE
RESET
tOH
Outputs
22
High-Z
Outputs Valid
MB84VD23381FJ-80
• Write/Erase/Program Operations (Flash)
Parameter
Symbol
Value
Unit
JEDEC
Standard
Min
Typ
Max
Write Cycle Time
tAVAV
tWC
70


ns
Address Setup Time
tAVWL
tAS
0


ns

tASO
12


ns
tWLAX
tAH
45


ns

tAHT
0


ns
Data Setup Time
tDVWH
tDS
30


ns
Data Hold Time
tWHDX
tDH
0


ns

0


ns
tOEH
10


ns
CEf High During Toggle Bit Polling

tCEPH
20


ns
OE High During Toggle Bit Polling

tOEPH
20


ns
Read Recover Time Before Write
tGHWL
tGHWL
0


ns
Read Recover Time Before Write
tGHEL
tGHEL
0


ns
CEf Setup Time
tELWL
tCS
0


ns
WE Setup Time
tWLEL
tWS
0


ns
CEf Hold Time
tWHEH
tCH
0


ns
WE Hold Time
tEHWH
tWH
0


ns
Write Pulse Width
tWLWH
tWP
35


ns
CEf Pulse Width
tELEH
tCP
35


ns
Write Pulse Width High
tWHWL
tWPH
25


ns
CEf Pulse Width High
tEHEL
tCPH
25


ns
Programming Operation
tWHWH1
tWHWH1

6
60
µs
Sector Erase Operation *1
tWHWH2
tWHWH2

0.2
1
s

tVCS
50


µs
Rise Time to VID *

tVIDR
500


ns
Rise Time to VACC *3

tVACCR
500


ns
Voltage Transition Time *2

tVLHT
4


µs

tWPP
100


µs
Address Setup Time to OE Low During Toggle Bit
Polling
Address Hold Time
Address Hold Time from CEf or OE High During
Toggle Bit Polling
Output
Enable Hold
Time
Read
Toggle and Data Polling
VCCf Setup Time
2
Write Pulse Width *
2
(Continued)
23
MB84VD23381FJ-80
(Continued)
Symbol
Parameter
Unit
JEDEC
Standard
Min
Typ
Max

tOESP
4


µs

tCSP
4


µs
Recover Time from RY/BY

tRB
0


ns
RESET Pulse Width

tRP
500


ns
RESET High Level Period Before Read

tRH
200


ns
Program/Erase Valid to RY/BY Delay

tBUSY


90
ns
Delay Time from Embedded Output Enable

tEOE


70
ns
Erase Time-out Time

tTOW
50

µs
Erase Suspend Transition Time

tSPD

20
µs
OE Setup Time to WE Active *2
CEf Setup Time to WE Active *
2
*1: This does not include preprogramming time.
*2: This timing is for Sector Group Protection operation.
*3: This timing is for Accelerated Program operation.
24
Value

MB84VD23381FJ-80
• Write Cycle (WE control) (Flash)
3rd Bus Cycle
Data Polling
555h
Address
tWC
PA
tAS
PA
tRC
tAH
CEf
tCS
tCH
tCE
OE
tGHWL
tWP
tOE
tWPH
tWHWH1
WE
Data
A0h
tOH
tDF
tDS tDH
PD
DQ7
DOUT
DOUT
Notes : • PA is address of the memory location to be programmed.
• PD is data to be programmed at word address.
• DQ7 is the output of the complement of the data written to the device.
• DOUT is the output of the data written to the device.
• Figure indicates last two bus cycles out of four bus cycle sequence.
25
MB84VD23381FJ-80
• Write Cycle (CEf control) (Flash)
3rd Bus Cycle
Data Polling
555h
Address
tWC
PA
PA
tAS
tAH
WE
tWS
tWH
OE
tGHEL
tCP
tCPH
tWHWH1
CEf
tDS
Data
A0h
tDH
PD
DQ7
DOUT
Notes : • PA is address of the memory location to be programmed.
• PD is data to be programmed at word address.
• DQ7 is the output of the complement of the data written to the device.
• DOUT is the output of the data written to the device.
• Figure indicates last two bus cycles out of four bus cycle sequence.
26
MB84VD23381FJ-80
• AC Waveforms Chip/Sector Erase Operations (Flash)
555h
Address
tWC
2AAh
tAS
555h
555h
2AAh
SA*
tAH
CEf
tCS
tCH
OE
tGHWL
tWP
tWPH
tDS
tDH
WE
AAh
Data
30h for Sector Erase
55h
80h
AAh
55h
10h/
30h
tVCS
VCCf
* : SA is the sector address for Sector Erase. Addresses = 555h (Word) for Chip Erase.
27
MB84VD23381FJ-80
• AC Waveforms for Data Polling during Embedded Algorithm Operations (Flash)
CEf
tCH
tDF
tOE
OE
tOEH
WE
tCE
*
DQ7
Data
DQ7
DQ7 =
Valid Data
High-Z
tWHWH1 or 2
DQ6 to DQ0
DQ6 to DQ0 =
Output Flag
Data
tBUSY
DQ6 to DQ0
Valid Data
tEOE
RY/BY
* : DQ7 = Valid Data (the device has completed the Embedded operation) .
28
High-Z
MB84VD23381FJ-80
• AC Waveforms for Toggle Bit during Embedded Algorithm Operations (Flash)
Address
tAHT tASO
tAHT tAS
CEf
tCEPH
WE
tOEPH
tOEH
tOEH
OE
tDH
DQ6/DQ2
tOE
Toggle
Data
Data
tCE
Toggle
Data
Toggle
Data
*
Stop
Toggling
Output
Valid
tBUSY
RY/BY
* : DQ6 stops toggling (the device has completed the Embedded operation).
29
MB84VD23381FJ-80
• Bank-to-bank Read/Write Timing Diagram (Flash)
Address
Read
Command
Read
Command
Read
Read
tRC
tWC
tRC
tWC
tRC
tRC
BA1
BA2
(555h)
BA1
BA2
(PA)
BA1
BA2
(PA)
tAS
tACC
tAH
tAS
tAHT
tCE
CEf
tOE
tCEPH
OE
tGHWL
tDF
tOEH
tWP
WE
tDS
DQ
Valid
Output
tDH
Valid
Intput
(A0h)
tDF
Valid
Output
Valid
Intput
(PD)
Valid
Output
Status
Note : This is example of Read for Bank 1 and Embedded Algorithm (program) for Bank 2.
BA1 : Address corresponding to Bank 1
BA2 : Address corresponding to Bank 2
30
MB84VD23381FJ-80
• RY/BY Timing Diagram during Write/Erase Operations (Flash)
CEf
Rising edge of the last WE signal
WE
Entire programming
or erase operations
RY/BY
tBUSY
• RESET, RY/BY Timing Diagram (Flash)
WE
RESET
tRP
tRB
RY/BY
tREADY
31
MB84VD23381FJ-80
• Temporary Sector Unprotection (Flash)
VCCf
tVIDR
tVCS
tVLHT
VID
VIH
RESET
CEf
WE
tVLHT
Program or Erase Command Sequence
tVLHT
RY/BY
Unprotection period
• Acceleration Mode Timing Diagram (Flash)
VCCf
tVACCR
tVCS
tVLHT
VACC
VIH
WP/ACC
CEf
WE
tVLHT
Program Command Sequence
RY/BY
Acceleration period
32
tVLHT
MB84VD23381FJ-80
• Extended Sector Group Protection (Flash)
VCCf
tVCS
RESET
tVLHT
tVIDR
tWC
Address
tWC
SPAX
SPAX
SPAY
A6, A3,
A2, A0
A1
CEf
OE
TIME-OUT
tWP
WE
Data
60h
60h
40h
01h
60h
tOE
SPAX : Sector Group Address to be protected
SPAY : Next Sector Group Address to be protected
TIME-OUT : Time-Out window = 250 µs (Min)
33
MB84VD23381FJ-80
■ 64 M FCRAM AC Charactaristics for MCP
• READ OPERATION (FCRAM)
Parameter
Symbol
Value
Min
Max
Unit
Notes
Read Cycle Time
tRC
90

ns
Chip Enable Access Time
tCE

80
ns
*1, *3
Output Enable Access Time
tOE

45
ns
*1
Chip Enable Access Time
tAA

80
ns
*1, *4
Output Data Hold Time
tOH
5

ns
*1
CE1r Low to Output Low-Z
tCLZ
5

ns
*2
OE Low to Output Low-Z
tOLZ
0

ns
*2
CE1r High to Output High-Z
tCHZ

30
ns
*2
OE High to Output High-Z
tOHZ

25
ns
*2
Address Setup Time to CE1r Low
tASC
−5

ns
*5
tASO
45

ns
*3, *6
tASO[ABS]
10

ns
*7
tAX

5
ns
*4
CE1r Low to Address Hold Time
tCLAH
90

ns
*4
OE Low to Address Hold Time
tOLAH
45

ns
*4, *8
CE1r High to Address Hold Time
tCHAH
−5

ns
OE High to Address Hold Time
tOHAH
–5

ns
CE1r Low to OE Low Delay Time
tCLOL
45
1000
ns
*4, *6, *8, *9
OE Low to CE1r High Delay Time
tOLCH
45

ns
*8
tCP
20

ns
tOP
45
1000
ns
*6, *8, *9
tOP[ABS]
20

ns
*7
Address Setup Time to OE
Address Invalid Time
CE1r High Pulse Width
OE High Pulse Width
*1: The output load is 30 pF.
*2: The output load is 5 pF.
*3: The tCE is applicable if OE is brought to Low before CE1r goes Low and is also applicable if actual value of both
or either tASO or tCLOL is shorter than specified value.
*4: Applicable only to A0 and A1 when both CE1r and OE are kept at Low for the address access.
*5: Applicable if OE is brought to Low before CE1r goes Low.
*6: The tASO, tCLOL (Min) and tOP (Min) are reference values when the access time is determined by tOE.
If actual value of each parameter is shorter than specified minimum value, tOE becomes longer by the amount
of subtracting actual value from specified minimum value.
For example, if actual tASO, tASO (actual) , is shorter than specified minimum value, tASO (Min) , during OE control
access (i.e., CE1r stays Low) , the tOE becomes tOE (Max) + tASO (Min) − tASO (actual) .
*7: The tASO[ABS] and tOP[ABS] are the absolute minimum values during OE control access.
*8: If actual value of either tCLOL or tOP is shorter than specified minimum value, both tOLAH and tOLCH become tRC (Min)
− tCLOL (actual) or tRC (Min) − tOP (actual) .
*9: Maximum value is applicable if CE1r is kept at Low.
34
MB84VD23381FJ-80
• WRITE OPERATION (FCRAM)
Parameter
Symbol
Value
Min
Max
Unit
Notes
Write Cycle Time
tWC
90

ns
*1
Address Setup Time
tAS
0

ns
*2
Address Hold Time
tAH
45

ns
*2
CE1r Write Setup Time
tCS
0
1000
ns
CE1r Write Hold Time
tCH
0
1000
ns
WE Setup Time
tWS
0

ns
WE Hold Time
tWH
0

ns
LB and UB Setup Time
tBS
0

ns
LB and UB Hold Time
tBH
−5

ns
OE Setup Time
tOES
0
1000
ns
*3
tOEH
45
1000
ns
*3, *4
tOEH[ABS]
20

ns
*5
OE High to CE1r Low Setup Time
tOHCL
−3

ns
*6
OE High to Address Hold Time
tOHAH
−5

ns
*7
CE1r Write Pulse Width
tCW
60

ns
*1, *8
WE Write Pulse Width
tWP
60

ns
*1, *8
CE1r Write Recovery Time
tWRC
15

ns
*1, *9
WE Write Recovery Time
tWR
15
1000
ns
*1, *3, *9
Data Setup Time
tDS
20

ns
Data Hold Time
tDH
0

ns
CE1r High Pulse Width
tCP
20

ns
OE Hold Time
*9
*1: Minimum value must be equal or greater than the sum of actual tCW (or tWP) and tWRC (or tWR) .
*2: New write address is valid from either CE1r or WE that is brought to High.
*3: Maximum value is applicable if CE1r is kept at Low and both WE and OE are kept at High.
*4: The tOEH is specified from end of tWC (Min) , and is a reference value when access time is determined by tOE.
If actual value is shorter than specified minimum value, tOE becomes longer by the amount of subtracting actual
value from specified minimum value.
*5: The tOEH[ABS] is the absolute minimum value if write cycle is terminated by WE and CE1r stays Low.
*6: tOHCL (Min) must be satisfied if read operation is not performed prior to write operation.
In case OE is disabled after tOHCL (Min) , WE Low must be asserted after tRC (Min) from CE1r Low.
In other words, read operation is initiated if tOHCL (Min) is not satisfied.
*7: Applicable if CE1r stays Low after read operation.
*8: tCW and tWP are applicable if write operation is initiated by CE1r and WE, respectively.
*9: tWRC and tWR are applicable if write operation is terminated by CE1r and WE, respectively.
The tWR (Min) can be ignored if CE1r is brought to High together or after WE is brought to High.
In such a case, the tCP (Min) must be satisfied.
35
MB84VD23381FJ-80
• POWER DOWN PARAMETER (FCRAM)
Parameter
Symbol
Value
Min
Max
Unit
CE2r Low Setup Time for Power Down Entry
tCSP
10

ns
CE2r Low Hold Time after Power Down Entry
tC2LP
100

ns
CE1r High Hold Time following CE2r High after
Power Down Exit
tCHH
350

µs
CE1r High Setup Time following CE2r High after
Power Down Exit
tCHS
10

ns
Note
• OTHER TIMING PARAMETER (FCRAM)
Parameter
Symbol
CE1r High to OE Invalid Time for Standby Entry
Value
Unit
Note
Min
Max
tCHOX
20

ns
CE1r High to WE Invalid Time for Standby Entry
tCHWX
20

ns
*1
CE2r Low Hold Time after Power-up
tC2LH
50

µs
*2
CE2r HIgh Hold Time after Power-up
tC2HL
50

µs
*3
CE1r High Hold Time following CE2r High after
Power-up
tCHH
350

µs
*2
tT
1
25
ns
*4
Input Transition Time
*1: It may write some data into any address location if tCHWX is not satisfied.
*2: Must satisfy tCHH(Min) after tC2LH(Min).
*3: Requires Power Down mode entry and exit after tC2HL.
*4: The Input Transition Time (tT) at AC testing is 5 ns as shown in below. If actual tT is longer than 5 ns,
it may violate some timing parameters of AC specification.
• AC TEST CONDITIONS (FCRAM)
Parameter
Condition
Value
Unit
Input High Level
VIH
VCCr = 2.7 V to 3.1 V
2.3
V
Input Low Level
VIL
VCCr = 2.7 V to 3.1 V
0.4
V
VREF
VCCr = 2.7 V to 3.1 V
1.3
V
tT
Between VIL and VIH
5
ns
Input Timing Measurement Level
Input Transition Time
36
Symbol
Note
MB84VD23381FJ-80
• READ Timing #1 (OE Control Access) (FCRAM)
tRC
Address
tRC
Address Valid
Address Valid
tOHAH
tCE
tASO
tOHAH
CE1r
tOLCH
tCLOL
tOP
tOE
tOE
OE
tASO
tOHZ
tOLZ
tOHZ
tOH
tOH
tOLZ
DQ
(Output)
Valid Data Output
Valid Data Output
Note : CE2r and WE must be High for entire read cycle.
• READ Timing #2 (CE1r Control Access) (FCRAM)
tRC
Address
tRC
Address Valid
tASC
Address Valid
tCE
tCHAH
tCE
tASC
tCHAH
CE1r
tOLCH
tCP
tOE
tCHZ
tCHZ
OE
tOH
tCLZ
tCLZ
tOH
DQ
(Output)
Valid Data Output
Valid Data Output
Note : CE2r and WE must be High for entire read cycle.
37
MB84VD23381FJ-80
• READ Timing #3 (Address Access after OE Control Access) (FCRAM)
tRC
tRC
Address
(A19 to A2)
Address Valid
Address
(A1, A0)
Address Valid
tASO
Address Valid (No change)
Address Valid
tOLAH
tOHAH
tAA
tAX
CE1r
tOE
tOHZ
OE
tOLZ
tOH
tOH
DQ
(Output)
Valid Data Output
Valid Data Output
Note : CE2r and WE must be High for entire read cycle.
• READ Timing #4 (Address Access after CE1r Control Access) (FCRAM)
tRC
Address
(A19 to A2)
Address Valid
Address
(A1, A0)
Address Valid
tASC
tRC
Address Valid (No change)
Address Valid
tCLAH
tAA
tCHAH
tAX
CE1r
tCE
tCHZ
OE
tOH
tCLZ
tOH
DQ
(Output)
Valid Data Output
Note : CE2r and WE must be High for entire read cycle.
38
Valid Data Output
MB84VD23381FJ-80
• WRITE Timing #1 (CE1r Control) (FCRAM)
tWC
Address
Address Valid
tAS
tAH
tAS
CE1r
tCW
tWRC
tWS
tWH
tWS
tBS
tBH
tBS
WE
UB, LB
tOHCL
OE
tDS
tDH
DQ
(Input)
Valid Data Input
Note : CE2r must be High for write cycle.
39
MB84VD23381FJ-80
• WRITE Timing #2-1 (WE Control, Single Write Operation) (FCRAM)
tWC
Address
tOHAH
CE1
Read Address
Write Address
tAS
tAH
tASO
Low
tWP
tWR
tOEH
WE
tOHBH
tBS
tBH
tBSO
UB, LB
tOES
OE
tOHZ
tOH
tDS
tDH
DQ
Read Data Output
Note : CE2r must be High for write cycle.
40
Write Data Input
tOLZ
MB84VD23381FJ-80
• WRITE Timing #2 (WE Control, Continuous Write Operation) (FCRAM)
tWC
Address
Address Valid
tOHAH
tAS
tAH
tAS
CE1r
tOHCL
tCS
tWP
tWR
WE
tBS
tBH
tBS
UB, LB
tOES
OE
tOHZ
tDS
tDH
DQ
(Input)
Valid Data Input
Note : CE2r must be High for write cycle.
41
MB84VD23381FJ-80
• READ/WRITE Timing #1-1 (CE1r Control) (FCRAM)
tWC
Address
Write Address
tCHAH
tAS
Read Address
tAH
tASC
CE1r
tCP
tWRC
tWS
tWH
tCW
tWH
tWS
WE
tBS
tBH
UB, LB
tOHCL
tCLOL
OE
tCHZ
tOH
tDS
tDH
DQ
Read Data Output
Write Data Input
Note : Write address is valid from either CE1r or WE of last falling edge.
42
tOLZ
tCLZ
MB84VD23381FJ-80
• READ/WRITE Timing #1-2 (CE1r Control) (FCRAM)
tRC
Address
Read Address
Write Address
tASC
tCHAH
tAS
tWRC
CE1r
tWRC(Min)
tWH
tCP
tWS
tWH
tWS
WE
tBH
tCE
tBS
UB, LB
tOEH
tOHCL
OE
tCHZ
tDH
tCLZ
tOH
DQ
Write Data Input
Read Data Output
Note : The tOEH is specified from the time satisfied both tWRC and tWR (Min) .
43
MB84VD23381FJ-80
• READ (OE Control) /WRITE (WE Control) Timing #2-1 (FCRAM)
tWC
Address
tOHAH
CE1r
Read Address
Write Address
tAS
tAH
tASO
Low
tWP
tWR
WE
tBS
tBH
UB, LB
tOES
tOEH
OE
tOHZ
tOH
tDS
tDH
DQ
Read Data Output
Write Data Input
Note : CE1r can be tied to Low for WE and OE controlled operation.
When CE1r is tied to Low, output is exclusively controlled by OE.
44
tOLZ
MB84VD23381FJ-80
• READ (OE Control) /WRITE (WE Control) Timing #2-2 (FCRAM)
tRC
Address
Read Address Valid
Write Address
tOHAH
tASO
CE1r
tAS
Low
tWR
WE
tBH
tBS
UB, LB
tOEH
tOE
tOES
OE
tDH
tOHZ
tOH
tOLZ
DQ
Write Data Input
Read Data Output
Note : CE1r can be tied to Low for WE and OE controlled operation.
When CE1r is tied to Low, output is exclusively controlled by OE.
45
MB84VD23381FJ-80
• POWER DOWN Timing (FCRAM)
CE1r
tCHS
CE2r
tCSP
tC2LP
tCHH
High-Z
DQ
Power Down Entry
Power Down Mode
Power Down Exit
• POWER-UP Timing 1 (FCRAM)
CE1r
tCHS
tC2LH
tCHH
*
CE2r
VCCr
VCCr Min
0V
* : It is recommended CE2r to kept at Low during VCCr power-up.
The tC2LH specifies after VCCr reaches specified minimum level.
• POWER-UP Timing 2 (FCRAM)
CE1r
tCHS
tC2HL
tCSP
tC2LP
tCHH
CE2r
tC2HL
VCCr
VCCr Min
0V
* : The tC2LH specifies from CE2r Low to High transition after VCCr reaches specified minimum level.
CE1r must be brought to High prior to or together with CE2r Low to High transition.
46
MB84VD23381FJ-80
• Standby Entry Timing after Read or Write (FCRAM)
CE1r
tCHOX
tCHWX
OE
WE
Active (Read)
Standby
Active (Write)
Standby
Note : Both tCHOX and tCHWX define the earliest entry timing for Standby mode. If either of timing is not satisfied, it
takes tRC (Min) period from either last address transition of A0 and A1, or CE1r Low to High transition.
47
MB84VD23381FJ-80
■ DATA RETENTION CHARACTERISTICS (FCRAM)
Parameter
Symbol
Value
Conditions
Max
Unit
VDR
CE1r = CE2r ≥ VCCr − 0.2 V or,
CE1r = CE2r = VIH,
2.1
3.1
V
IDR
2.3 V ≤ VCCr ≤ 2.7 V,
VIN = VIH*or VIL,
CE1r = CE2r = VIH*, IOUT = 0 mA

1
mA
IDR1
2.3 V ≤ VCCr ≤ 2.7 V,
VIN ≤ 0.2 V or VIN ≥ VCCr − 0.2 V,
CE1r = CE2r ≥ VCCr − 0.2 V,
IOUT = 0 mA

70
µA
Data Retention Setup Time
tDRS
2.7 V ≤ VCCr ≤ 3.1 V
at data retention entry
0

ns
Data Retention Recovery Time
tDRR
2.7 V ≤ VCCr ≤ 3.1 V
after data retention
90

ns
0.5

V/µs
VCCr Data Retention Supply Voltage
VCCr Data Retention Supply Current
∆V/∆t
VCCr Voltage Transition Time
*: 2.0 V ≤ VIH ≤ VCCr + 0.3 V
• Data Retention Timing (FCRAM)
tDRS
tDRR
3.1 V
VCCr
∆V/∆t
∆V/∆t
2.7 V
CE2r
2.1 V
CE1r
CE1r= CE2r > VCCr-0.2 V or
VIH* Min
0.4 V
VSS
Data Retention Mode
Data bus must be in High-Z at data retention entry.
*: 2.0 V ≤ VIH ≤ VCCr + 0.3 V
48
Min
MB84VD23381FJ-80
■ ERASE AND PROGRAMMING PERFORMANCE (Flash)
Value
Parameter
Unit
Remarks
Min
Typ
Max
Sector Erase Time
—
0.5
2
s
Excludes programming time
prior to erasure
Word Programming Time
—
6
100
µs
Excludes system-level
overhead
Chip Programming Time
—
25.2
95
s
Excludes system-level
overhead
100,000
—
—
cycle
Erase/Program Cycle
Note : Typical Erase conditions TA = +25°C, VCCf_1 & VCCf_2 = 2.9V
Typical Program conditions TA = +25°C, VCCf_1 & VCCf_2 = 2.9V
Data= Checker
■ PIN CAPACITANCE
Parameter
Input Capacitance
Symbol
CIN
Test Setup
Value
Unit
Typ
Max
VIN = 0
11
14
pF
Output Capacitance
COUT
VOUT = 0
12
16
pF
Control Pin Capacitance
CIN2
VIN = 0
14
16
pF
WP/ACC Pin Capacitance
CIN3
VIN = 0
21.5
26
pF
Note : Test conditions TA = +25 °C, f = 1.0 MHz
■ HANDLING OF PACKAGE
Please handle this package carefully since the sides of package create acute angles.
■ CAUTION
• The high voltage (VID) cannot apply to address pins and control pins except RESET. Exception is when
autoselect and sector group protect function are used, then the high voltage (VID) can be applied to RESET.
• Without the high voltage (VID) , sector group protection can be achieved by using “Extended Sector Group
Protection” command.
49
MB84VD23381FJ-80
■ ORDERING INFORMATION
MB84VD23381
FJ
-80
PBS
PACKAGE TYPE
PBS = 65-ball FBGA
SPEED OPTION
See Product Selector Guide
Device Revision
DEVICE NUMBER/DESCRIPTION
64 Mega-bit (4 M × 16-bit) Dual Operation Flash Memory
3.0 V-only Read, Program, and Erase
16 Mega-bit (1 M × 16-bit) FCRAM
50
MB84VD23381FJ-80
■ APPENDIX A
• ISB2r vs. VIN Cycle Time
ISB2r vs. VIN Cycle time (VCCr = 3.0V)
2.5
: RT = +25ooC
: LT = −25 oC
: HT = +85 C
ISB2r [mA]
2.0
1.5
1.0
0.5
0.0
0
200
400
600
800
1000
VIN Cycle time [ns]
51
MB84VD23381FJ-80
■ PACKAGE DIMENSION
65-ball plastic FBGA
(BGA-65P-M01)
9.00±0.10(.354±.004)
0.20(.008) S B
+0.15
1.19 –0.10
(Seated height)
+.006
.047 –.004
0.39±0.10
(Stand off)
(.015±.004)
B
0.40(.016)
REF
0.80(.031)
REF
10
0.80(.031)
REF
9
8
7
6
5
4
3
2
1
A
9.00±0.10
(.354±.004)
0.40(.016)
REF
0.10(.004) S
K J H G F E D C B A
INDEX BALL
INDEX-MARK AREA
0.20(.008) S A
S
+0.10
65-Ø0.45 –0.05
+.004
0.08(.003)
M
S A B
65-Ø.018 –.002
0.10(.004) S
C
2001 FUJITSU LIMITED B65001S-c-1-2
Dimensions in mm (inches).
Note: The values in parentheses are reference values.
52
MB84VD23381FJ-80
FUJITSU LIMITED
All Rights Reserved.
The contents of this document are subject to change without notice.
Customers are advised to consult with FUJITSU sales
representatives before ordering.
The information, such as descriptions of function and application
circuit examples, in this document are presented solely for the
purpose of reference to show examples of operations and uses of
Fujitsu semiconductor device; Fujitsu does not warrant proper
operation of the device with respect to use based on such
information. When you develop equipment incorporating the
device based on such information, you must assume any
responsibility arising out of such use of the information. Fujitsu
assumes no liability for any damages whatsoever arising out of
the use of the information.
Any information in this document, including descriptions of
function and schematic diagrams, shall not be construed as license
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Fujitsu assumes no liability for any infringement of the intellectual
property rights or other rights of third parties which would result
from the use of information contained herein.
The products described in this document are designed, developed
and manufactured as contemplated for general use, including
without limitation, ordinary industrial use, general office use,
personal use, and household use, but are not designed, developed
and manufactured as contemplated (1) for use accompanying fatal
risks or dangers that, unless extremely high safety is secured, could
have a serious effect to the public, and could lead directly to death,
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reaction control in nuclear facility, aircraft flight control, air traffic
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extremely high reliability (i.e., submersible repeater and artificial
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Please note that Fujitsu will not be liable against you and/or any
third party for any claims or damages arising in connection with
above-mentioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You
must protect against injury, damage or loss from such failures by
incorporating safety design measures into your facility and
equipment such as redundancy, fire protection, and prevention of
over-current levels and other abnormal operating conditions.
If any products described in this document represent goods or
technologies subject to certain restrictions on export under the
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of those products from Japan.
F0307
 FUJITSU LIMITED Printed in Japan