FAIRCHILD 30N6S2

FGH30N6S2 / FGP30N6S2 / FGB30N6S2
600V, SMPS II Series N-Channel IGBT
General Description
Features
The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low
Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with
lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and
reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast
switching times and UIS capability are essential. SMPS II
LGC devices have been specially designed for:
• 100kHz Operation at 390V, 14A
•
•
•
•
•
•
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
• 200kHZ Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 23nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ
• Low Conduction Loss
Formerly Developmental Type TA49367.
Symbol
Package
JEDEC STYLE TO-247
E
JEDEC STYLE TO-220AB
C
E
G
C
JEDEC STYLE TO-263AB
G
C
C
G
E
G
E
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol
BVCES
Parameter
Collector to Emitter Breakdown Voltage
Ratings
600
Units
V
IC25
Collector Current Continuous, TC = 25°C
45
A
IC110
Collector Current Continuous, TC = 110°C
20
A
ICM
Collector Current Pulsed (Note 1)
108
A
VGES
Gate to Emitter Voltage Continuous
±20
V
VGEM
Gate to Emitter Voltage Pulsed
±30
V
SSOA
Switching Safe Operating Area at TJ = 150°C, Figure 2
60A at 600V
EAS
Pulsed Avalanche Energy, ICE = 20A, L = 1.3mH, VDD = 50V
150
PD
Power Dissipation Total TC = 25°C
167
W
Power Dissipation Derating TC > 25°C
1.33
W/°C
TJ
TSTG
mJ
Operating Junction Temperature Range
-55 to 150
°C
Storage Junction Temperature Range
-55 to 150
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2001 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGB30N6S2 Rev. A
FGH30N6S2 / FGP30N6S2 / FGB30N6S2
July 2001
Device Marking
30N6S2
Device
FGH30N6S2
Package
TO-247
Tape Width
-
Quantity
-
30N6S2
FGP30N6S2
TO-220AB
-
-
30N6S2
FGB30N6S2
TO-263AB
24mm
800
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
BVCES
Collector to Emitter Breakdown Voltage
IC = 250µA, VGE = 0
600
-
-
V
BVECS
Emitter to Collector Breakdown Voltage
IC = 10mA, VGE = 0
10
25
-
V
Collector to Emitter Leakage Current
VCE = 600V
ICES
IGES
Gate to Emitter Leakage Current
TJ = 25°C
-
-
100
µA
TJ = 125°C
-
-
2
mA
-
-
±250
nA
VGE = ± 20V
On State Characteristics
VCE(SAT)
Collector to Emitter Saturation Voltage
IC = 12A,
VGE = 15V
TJ = 25°C
-
2.0
2.5
V
TJ = 125°C
-
1.7
2.0
V
IC = 12A,
VCE = 300V
VGE = 15V
-
23
29
nC
VGE = 20V
-
26
33
nC
3.5
4.3
5.0
V
-
6.5
8.0
V
-
-
A
ns
Dynamic Characteristics
QG(ON)
VGE(TH)
VGEP
Gate Charge
Gate to Emitter Threshold Voltage
IC = 250µA, VCE = 600V
Gate to Emitter Plateau Voltage
IC = 12A, VCE = 300V
Switching Characteristics
SSOA
Switching SOA
TJ = 150°C, RG = 10Ω, VGE =
15V, L = 100µH, VCE = 600V
60
td(ON)I
Current Turn-On Delay Time
IGBT and Diode at TJ = 25°C,
ICE = 12A,
VCE = 390V,
VGE = 15V,
RG = 10Ω
L = 200µH
Test Circuit - Figure 20
-
6
-
-
10
-
ns
-
40
-
ns
-
53
-
ns
-
55
-
µJ
-
110
-
µJ
-
100
150
µJ
-
11
-
ns
-
17
-
ns
-
73
100
ns
trI
td(OFF)I
tfI
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
EON1
Turn-On Energy (Note 2)
EON2
Turn-On Energy (Note 2)
EOFF
Turn-Off Energy (Note 3)
td(ON)I
Current Turn-On Delay Time
trI
td(OFF)I
tfI
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
EON1
Turn-On Energy (Note 2)
EON2
Turn-On Energy (Note 2)
EOFF
Turn-Off Energy (Note 3)
IGBT and Diode at TJ = 125°C
ICE = 12A,
VCE = 390V,
VGE = 15V,
RG = 10Ω
L = 200µH
Test Circuit - Figure 20
-
90
100
ns
-
55
-
µJ
-
160
200
µJ
-
250
350
µJ
-
-
0.75
°C/W
Thermal Characteristics
RθJC
Thermal Resistance Junction-Case
NOTE:
2. Values
for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss
of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ
as the IGBT. The diode type is specified in figure 20.
3. Turn-Off
Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of
the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per
JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
©2001 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A
FGH30N6S2 / FGP30N6S2 / FGS30N6S2
Package Marking and Ordering Information
40
30
20
10
0
50
75
100
125
150
70
TJ = 150oC, RG = 10Ω, VGE = 15V, L = 100mH
60
50
40
30
20
10
0
0
100
TC , CASE TEMPERATURE (oC)
fMAX, OPERATING FREQUENCY (kHz)
1000
TC
75oC
VGE = 15V
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
100
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.49oC/W, SEE NOTES
TJ = 125oC, RG = 3Ω, L = 200mH, V CE = 390V
10
20
10
1
30
DUTY CYCLE < 0.5%, VGE = 10V
PULSE DURATION = 250ms
14
12
10
8
6
TJ = 125oC
4
0
0.50
TJ = 25oC
0.75
1.00
1.25
1.50
1.75
2.00
2.25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage
©2001 Fairchild Semiconductor Corporation
700
600
350
VCE = 390V, RG = 10Ω, TJ = 125oC
10
300
8
250
ISC
tSC
6
200
4
150
2
9
10
11
12
13
14
100
16
15
Figure 4. Short Circuit Withstand Time
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
18
2
500
VGE , GATE TO EMITTER VOLTAGE (V)
Figure 3. Operating Frequency vs Collector to
Emitter Current
TJ = 150oC
400
12
ICE, COLLECTOR TO EMITTER CURRENT (A)
16
300
Figure 2. Minimum Switching Safe Operating Area
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
Figure 1. DC Collector Current vs Case
Temperature
VGE = 10V
200
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ISC, PEAK SHORT CIRCUIT CURRENT (A)
25
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE , DC COLLECTOR CURRENT (A)
50
18
DUTY CYCLE < 0.5%, VGE =15V
PULSE DURATION = 250ms
16
14
12
10
8
6
TJ = 150oC
TJ = 125oC
4
TJ = 25oC
2
0
.5
.75
1
1.25
1.50
1.75
2.0
2.25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector to Emitter On-State Voltage
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A
FGH30N6S2 / FGP30N6S2 / FGS30N6S2
Typical Performance Curves
600
EOFF TURN-OFF ENERGY LOSS (µJ)
EON2 , TURN-ON ENERGY LOSS (mJ)
400
RG = 10Ω, L = 500mH, VCE = 390V
350
300
TJ = 125oC, VGE = 10V, VGE = 15V
250
200
150
100
TJ = 25oC, VGE = 10V, VGE = 15V
50
0
0
5
10
15
20
RG = 10Ω, L = 500mH, VCE = 390V
500
400
TJ = 125oC, VGE = 10V, VGE = 15V
300
200
100
TJ = 25oC, VGE = 10V, VGE = 15V
0
25
0
ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
20
25
RG = 10Ω, L = 500mH, VCE = 390V
14
35
12
10
TJ = 25oC, TJ = 125oC, VGE = 10V
8
6
4
30
25
TJ = 125oC, VGE = 15V, VGE = 10V
20
15
10
TJ = 25oC, VGE = 10V, VGE =15V
TJ = 25oC, TJ = 125oC, VGE = 15V
2
0
15
40
RG = 10Ω, L = 500µH, VCE = 390V
trI , RISE TIME (ns)
td(ON)I, TURN-ON DELAY TIME (ns)
10
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
16
5
0
5
10
15
20
0
25
0
ICE , COLLECTOR TO EMITTER CURRENT (A)
5
10
15
20
25
ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
90
120
RG = 10Ω, L = 500µH, VCE = 390V
RG = 10Ω, L = 500µH, VCE = 390V
80
tfI , FALL TIME (ns)
td(OFF) TURN-OFF DELAY TIME (ns)
5
ICE , COLLECTOR TO EMITTER CURRENT (A)
70
60
50
40
100
TJ = 125oC, VGE = 10V OR 15V
80
60
30
TJ = 25oC, VGE = 10V OR 15V
20
40
0
5
10
15
20
25
ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
©2001 Fairchild Semiconductor Corporation
0
5
10
15
20
25
ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 12. Fall Time vs Collector to Emitter
Current
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A
FGH30N6S2 / FGP30N6S2 / FGS30N6S2
Typical Performance Curves (Continued)
DUTY CYCLE < 0.5%, VCE = 10V
VGE, GATE TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
16
175
PULSE DURATION = 250µs
150
125
o
TJ = 25 C
100
75
50
TJ = 125oC
25
o
TJ = -55 C
12
VCE = 600V
10
8
6
VCE = 400V
4
VCE = 200V
2
0
6
5
8
7
10
9
11
12
13
14
15
IG(REF) = 1mA, RL = 25Ω, TJ = 25oC
14
0
16
0
2
4
6
8
RG = 10Ω, L = 500mH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
1.0
ICE = 24A
0.8
0.6
0.4
ICE = 12A
0.2
ICE = 6A
0
25
50
75
100
150
125
o
C, CAPACITANCE (nF)
1.2
1.0
0.8
CIES
0.6
COES
0.2
CRES
20
30
40
50
60
70
80
90
100
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 17. Capacitance vs Collector to Emitter
Voltage
©2001 Fairchild Semiconductor Corporation
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FREQUENCY = 1MHz
10
18
20
22
24
TJ = 125oC, L = 500µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
ICE = 24A
1
ICE = 12A
ICE = 6A
0.1
1.0
10
100
1000
Figure 16. Total Switching Loss vs Gate
Resistance
1.4
0
16
RG, GATE RESISTANCE (Ω)
Figure 15. Total Switching Loss vs Case
Temperature
0.0
14
10
TC , CASE TEMPERATURE ( C)
0.4
12
Figure 14. Gate Charge
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
Figure 13. Transfer Characteristic
1.2
10
QG , GATE CHARGE (nC)
VGE , GATE TO EMITTER VOLTAGE (V)
3.5
DUTY CYCLE < 0.5%
PULSE DURATION = 250µs, TJ = 25oC
3.0
2.5
ICE = 24A
ICE = 12A
2.0
ICE = 6A
1.5
6
7
8
9
10
11
12
13
14
15
16
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A
FGH30N6S2 / FGP30N6S2 / FGS30N6S2
Typical Performance Curves (Continued)
ZθJC , NORMALIZED THERMAL RESPONSE
100
0.50
0.20
t1
0.10
10-1
PD
t2
0.05
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
0.02
0.01
SINGLE PULSE
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1 , RECTANGULAR PULSE DURATION (s)
Figure 19. IGBT Normalized Transient Thermal Impedance, Junction to Case
Test Circuit and Waveforms
FGP30N6S2D
DIODE TA4949390
90%
10%
VGE
EON2
EOFF
L = 200mH
VCE
RG = 10Ω
90%
+
FGP30N6S2
ICE
VDD = 390V
-
10%
td(OFF)I
tfI
trI
td(ON)I
Figure 20. Inductive Switching Test Circuit
©2001 Fairchild Semiconductor Corporation
Figure 21. Switching Test Waveforms
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A
FGH30N6S2 / FGP30N6S2 / FGS30N6S2
Typical Performance Curves (Continued)
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic
discharge of energy through the devices. When
handling these devices, care should be exercised to
assure that the static charge built in the handler’s
body capacitance is not discharged through the
device. With proper handling and application
procedures, however, IGBTs are currently being
extensively used in production by numerous
equipment manufacturers in military, industrial and
consumer applications, with virtually no damage
problems due to electrostatic discharge. IGBTs can
be handled safely if the following basic precautions
are taken:
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or
equivalent.
2. When devices are removed by hand from their
carriers, the hand being used should be
grounded by any suitable means - for example,
with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed
from circuits with power on.
5. Gate Voltage Rating - Never exceed the gatevoltage rating of VGEM. Exceeding the rated VGE
can result in permanent damage to the oxide
layer in the gate region.
6. Gate Termination - The gates of these devices
are essentially capacitors. Circuits that leave the
gate open-circuited or floating should be avoided.
These conditions can result in turn-on of the
device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an
internal monolithic Zener diode from gate to
emitter. If gate protection is required an external
Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating
device performance for a specific application. Other
typical frequency vs collector current (ICE) plots are
possible using the information shown for a typical
unit in Figures 5, 6, 7, 8, 9 and 11. The operating
frequency plot (Figure 3) of a typical device shows
fMAX1 or fMAX2; whichever is smaller at each point.
The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held
to 10% of the on-state time for a 50% duty factor.
Other definitions are possible. td(OFF)I and td(ON)I are
defined in Figure 21. Device turn-off delay can
establish an additional frequency limiting condition
for an application other than TJM . td(OFF)I is important
when controlling output ripple under a lightly loaded
condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2).
The allowable dissipation (PD) is defined by
PD = (TJM - TC)/RθJC. The sum of device switching
and conduction losses must not exceed PD. A 50%
duty factor was used (Figure 3) and the conduction
losses (PC) are approximated by PC = (VCE x ICE)/2.
EON2 and EOFF are defined in the switching
waveforms shown in Figure 21. EON2 is the integral
of the instantaneous power loss (ICE x VCE) during
turn-on and EOFF is the integral of the instantaneous
power loss (ICE x VCE) during turn-off. All tail losses
are included in the calculation for EOFF; i.e., the
collector current equals zero (ICE = 0)
ECCOSORBD is a Trademark of Emerson and Cumming, Inc.
©2001 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A
FGH30N6S2 / FGP30N6S2 / FGS30N6S2
Handling Precautions for IGBTs
3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE
A
E
TERM. 4
ØS
ØP
MAX
MIN
MAX
A
0.180
0.190
4.58
4.82
-
b
0.046
0.051
1.17
1.29
2, 3
b1
0.060
0.070
1.53
1.77
1, 2
b2
0.095
0.105
2.42
2.66
1, 2
c
0.020
0.026
0.51
0.66
1, 2, 3
D
0.800
0.820
20.32
20.82
-
b1
E
0.605
0.625
15.37
15.87
b2
e
ØR
D
L
c
e1
b
1
2
MILLIMETERS
MIN
Q
L1
INCHES
SYMBOL
3
e
e1
3
J1
0.219 TYP
0.438 BSC
J1
0.090
1
L
BACK VIEW
L1
2
5.56 TYP
11.12 BSC
NOTES
4
4
0.105
2.29
2.66
5
0.620
0.640
15.75
16.25
-
0.145
0.155
3.69
3.93
1
ØP
0.138
0.144
3.51
3.65
-
Q
0.210
0.220
5.34
5.58
-
ØR
0.195
0.205
4.96
5.20
-
ØS
0.260
0.270
6.61
6.85
-
NOTES:
1. Lead dimension and finish uncontrolled in L1.
2. Lead dimension (without solder).
3. Add typically 0.002 inches (0.05mm) for solder coating.
4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D.
5. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D.
6. Controlling dimension: Inch.
7. Revision 1 dated 1-93.
©2001 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A
FGH30N6S2 / FGP30N6S2 / FGS30N6S2
TO-247
SURFACE MOUNT JEDEC TO-263AB PLASTIC PACKAGE
E
A
A1
H1
TERM. 4
D
L2
L1
L
1
3
b
b1
e
c
J1
e1
0.450
(11.43)
TERM. 4
L3
b2
3
0.350
(8.89)
0.700
(17.78)
0.150
(3.81)
1
0.080 TYP (2.03)
0.062 TYP (1.58)
MINIMUM PAD SIZE RECOMMENDED FOR
SURFACE-MOUNTED APPLICATIONS
TO-263AB
24mm TAPE REEL
1.5mm
DIA. HOLE
INCHES
MILLIMETERS
NOTE
SYMBOL
MIN
MAX
MIN
MAX
S
A
0.170
0.180
4.32
4.57
0.048
0.052
1.22
1.32
4, 5
A1
b
0.030
0.034
0.77
0.86
4, 5
b1
0.045
0.055
1.15
1.39
4, 5
0.310
7.88
2
b2
c
0.018
0.022
0.46
0.55
4, 5
D
0.405
0.425 10.29
10.79
E
0.395
0.405 10.04
10.28
e
0.100 TYP
2.54 TYP
7
e1
0.200 BSC
5.08 BSC
7
0.045
0.055
1.15
1.39
H1
J1
0.095
0.105
2.42
2.66
L
0.175
0.195
4.45
4.95
L1
0.090
0.110
2.29
2.79
4, 6
L2
0.050
0.070
1.27
1.77
3
0.315
8.01
2
L3
NOTES:
1. These dimensions are within allowable dimensions of
Rev. C of JEDEC TO-263AB outline dated 2-92.
2. L3 and b2 dimensions established a minimum mounting
surface for terminal 4.
3. Solder finish uncontrolled in this area.
4. Dimension (without solder).
5. Add typically 0.002 inches (0.05mm) for solder plating.
6. L1 is the terminal length for soldering.
7. Position of lead to be measured 0.120 inches (3.05mm)
from bottom of dimension D.
8. Controlling dimension: Inch.
9. Revision 10 dated 5-99.
4.0mm
USER DIRECTION OF FEED
2.0mm
1.75mm
C
L
24mm
16mm
COVER TAPE
40mm MIN.
ACCESS HOLE
30.4mm
13mm
330mm
100mm
GENERAL INFORMATION
1. 800 PIECES PER REEL.
2. ORDER IN MULTIPLES OF FULL REELS ONLY.
3. MEETS EIA-481 REVISION "A" SPECIFICATIONS.
©2001 Fairchild Semiconductor Corporation
24.4mm
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A
FGH30N6S2 / FGP30N6S2 / FGS30N6S2
TO-263AB
3 LEAD JEDEC TO-220AB PLASTIC PACKAGE
INCHES
A
E
ØP
A1
Q
H1
TERM. 4
D
45o
E1
D1
L1
b1
L
b
c
60o
1
2
3
e
e1
J1
MILLIMETERS
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
0.170
0.180
4.32
4.57
-
A1
0.048
0.052
1.22
1.32
-
b
0.030
0.034
0.77
0.86
3, 4
b1
0.045
0.055
1.15
1.39
2, 3
c
0.014
0.019
0.36
0.48
2, 3, 4
14.99
15.49
-
4.06
-
D
0.590
0.610
D1
-
0.160
E
0.395
0.410
E1
-
0.030
10.04
-
10.41
-
0.76
-
e
0.100 TYP
2.54 TYP
5
e1
0.200 BSC
5.08 BSC
5
H1
0.235
0.255
5.97
6.47
-
J1
0.100
0.110
2.54
2.79
6
L
0.530
0.550
13.47
13.97
-
L1
0.130
0.150
3.31
3.81
2
ØP
0.149
0.153
3.79
3.88
-
Q
0.102
0.112
2.60
2.84
-
NOTES:
1. These dimensions are within allowable dimensions of Rev. J of JEDEC TO220AB outline dated 3-24-87.
2. Lead dimension and finish uncontrolled in L1.
3. Lead dimension (without solder).
4. Add typically 0.002 inches (0.05mm) for solder coating.
5. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D.
6. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D.
7. Controlling dimension: Inch.
8. Revision 2 dated 7-97.
©2001 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A
FGH30N6S2 / FGP30N6S2 / FGS30N6S2
TO-220AB
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Ensigna™
FACT™
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FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optpelectronics™
Quiet Series™
SILENT SWITCHER®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
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when properly used in accordance with instructions for use
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2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
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Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3