HGTG30N60C3D Data Sheet December 2001 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053. Features • 63A, 600V at TC = 25oC • Typical Fall Time . . . . . . . . . . . . . . . . 230ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Packaging JEDEC STYLE TO-247 The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. E C G Formerly Developmental Type TA49014. Ordering Information PART NUMBER HGTG30N60C3D PACKAGE TO-247 BRAND G30N60C3D NOTE: When ordering, use the entire part number. Symbol C G E FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 ©2001 Fairchild Semiconductor Corporation HGTG30N60C3D Rev. B HGTG30N60C3D Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Average Diode Forward Current at 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I(AVG) Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM Switching Safe Operating Area at TJ = 150oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC HGTG30N60C3D 600 UNITS V 63 30 25 252 ±20 ±30 60A at 600V 208 1.67 -40 to 150 260 4 15 A A A A V V W W/oC oC oC µs µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 25Ω. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V Emitter to Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 15 25 - V - - 250 µA - - 3.0 mA - 1.5 1.8 V - 1.7 2.0 V 3.0 5.2 6.0 V - - ±100 nA VCE(PK) = 480V 200 - - A VCE(PK) = 600V 60 - - A IC = IC110, VCE = 0.5 BVCES - 8.1 - V QG(ON) IC = IC110, VCE = 0.5 BVCES VGE = 15V - 162 180 nC VGE = 20V - 216 250 nC td(ON)I TJ = 150oC, ICE = IC110, VCE(PK) = 0.8 BVCES, VGE = 15V, RG = 3Ω, - 40 - ns - 45 - ns - 320 400 ns - 230 275 ns Collector to Emitter Leakage Current ICES VCE = BVCES VCE = BVCES Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA VCE(SAT) IC = IC110, VGE = 15V VGE(TH) IC = 250µA, VCE = VGE IGES VGE = ±20V SSOA TJ = 150oC, VGE = 15V, RG = 3Ω, TC = 25oC TC = 150oC TC = 25oC TC = 150oC TC = 25oC L = 100µH Gate to Emitter Plateau Voltage On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time VGEP trI td(OFF)I Current Fall Time tfI Turn-On Energy EON - 1050 - µJ Turn-Off Energy (Note 3) EOFF - 2500 - µJ Diode Forward Voltage VEC - 1.75 2.2 V ©2001 Fairchild Semiconductor Corporation L = 100µH IEC = 30A HGTG30N60C3D Rev. B HGTG30N60C3D Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL Diode Reverse Recovery Time trr Thermal Resistance RθJC TEST CONDITIONS MIN TYP MAX UNITS IEC = 30A, dIEC/dt = 100A/µs - 52 60 ns IEC = 1.0A, dIEC/dt = 100A/µs - 42 50 ns IGBT - - 0.6 oC/W Diode - - 1.3 oC/W NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTG30N60C3D was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include diode losses. 150 PULSE DURATION = 250µs DUTY CYCLE <0.5%, VCE = 10V 125 100 TC = 150oC 75 TC = 25oC 50 TC = -40oC 25 0 4 6 8 10 VGE, GATE TO EMITTER VOLTAGE (V) 12 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = 25oC 150 VGE = 15.0V 125 9.5V 100 9.0V 75 8.5V 50 7.0V 7.5V 0 0 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 4 6 8 10 FIGURE 2. SATURATION CHARACTERISTICS TC = -40oC 125 100 TC = 25oC 75 TC = 150oC 50 25 0 1 2 3 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 5 FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE ©2001 Fairchild Semiconductor Corporation 2 VCE , COLLECTOR TO EMITTER VOLTAGE (V) 150 0 8.0V 25 FIGURE 1. TRANSFER CHARACTERISTICS PULSE DURATION = 250µs DUTY CYCLE <0.5%, VGE = 10V 10.0V 12.0V 150 PULSE DURATION = 250µs DUTY CYCLE <0.5% VGE = 15V 125 100 TC = 150oC TC = -40oC TC = 25oC 75 50 25 0 0 1 2 3 4 5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE HGTG30N60C3D Rev. B HGTG30N60C3D (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (µs) ICE , DC COLLECTOR CURRENT (A) 70 VGE = 15V 60 50 40 30 20 10 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) 150 25 450 20 250 10 td(OFF)I , TURN-OFF DELAY TIME (ns) td(ON)I , TURN-ON DELAY TIME (ns) VGE = 10V 50 40 VGE = 15V 20 20 30 40 50 200 tSC 150 5 10 100 11 15 14 VGE , GATE TO EMITTER VOLTAGE (V) TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V 400 VGE = 10V 200 100 10 60 FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT VGE = 15V 300 ICE , COLLECTOR TO EMITTER CURRENT (A) 500 13 12 500 100 10 10 300 15 FIGURE 6. SHORT CIRCUIT WITHSTAND TIME TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V 30 400 ISC 350 FIGURE 5. MAX. DC COLLECTOR CURRENT vs CASE TEMPERATURE 200 500 VCE = 360V, RG = 25Ω, TJ = 125oC ISC, PEAK SHORT CIRCUIT CURRENT (A) Typical Performance Curves 50 20 30 40 ICE , COLLECTOR TO EMITTER CURRENT (A) 60 FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 500 TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V VGE = 10V tfI , FALL TIME (ns) trI , TURN-ON RISE TIME (ns) 400 100 VGE = 15V 10 10 20 30 40 50 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT ©2001 Fairchild Semiconductor Corporation 60 300 VGE = 10V 200 VGE = 15V 100 10 20 30 40 50 60 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO EMITTER CURRENT HGTG30N60C3D Rev. B HGTG30N60C3D 6.0 TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V EOFF , TURN-OFF ENERGY LOSS (mJ) EON , TURN-ON ENERGY LOSS (mJ) 8.0 (Continued) 7.0 6.0 5.0 VGE = 10V 4.0 3.0 2.0 1.0 VGE = 15V 0 10 20 30 40 50 TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V 5.0 4.0 VGE = 10V or 15V 3.0 2.0 1.0 0 10 60 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT fMAX , OPERATING FREQUENCY (kHz) 500 TJ = 150oC, TC = 75oC RG = 3Ω, L = 100µH 100 VGE = 15V fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) 10 VGE = 10V PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RθJC = 0.6oC/W 1 5 10 20 30 40 ICE, COLLECTOR TO EMITTER CURRENT (A) C, CAPACITANCE (pF) CIES 6000 5000 4000 3000 2000 COES 1000 CRES 0 10 15 20 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE ©2001 Fairchild Semiconductor Corporation 200 150 LIMITED BY CIRCUIT 100 50 0 0 100 200 300 400 500 600 25 FIGURE 14. SWITCHING SAFE OPERATING AREA VCE , COLLECTOR TO EMITTER VOLTAGE (V) FREQUENCY = 400kHz 5 TJ = 150oC, VGE = 15V, L = 100µH VCE , COLLECTOR TO EMITTER VOLTAGE (V) 8000 0 250 60 FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT 7000 60 20 30 40 50 ICE , COLLECTOR TO EMITTER CURRENT (A) IG (REF) = 3.54mA, RL = 20Ω, TC = 25oC 600 15 12 480 VCE = 600V 9 360 VCE = 400V 240 6 VCE = 200V 3 120 0 0 40 80 120 QG , GATE CHARGE (nC) 160 VGE , GATE TO EMITTER VOLTAGE (V) Typical Performance Curves 0 200 FIGURE 16. GATE CHARGE WAVEFORMS HGTG30N60C3D Rev. B HGTG30N60C3D ZθJC , NORMALIZED THERMAL RESPONSE Typical Performance Curves (Continued) 100 0.5 0.2 t1 0.1 10-1 PD 0.05 t2 0.02 0.01 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 10-1 101 100 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE 60 200 50 tr , RECOVERY TIMES (ns) IEC , FORWARD CURRENT (A) TC = 25oC, dIEC/dt = 100A/µs 100oC 10 150oC 1 0 25oC trr 40 30 ta 20 tb 10 0 0.5 1.0 1.5 2.0 VEC , FORWARD VOLTAGE (V) 2.5 FIGURE 18. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP 1 3.0 5 10 IEC , FORWARD CURRENT (A) 30 FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT Test Circuit and Waveforms 90% L = 100µH RHRP3060 10% VGE EOFF RG = 3Ω VCE 90% + - VDD = 480V ICE 10% td(OFF)I trI tfI FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation EON td(ON)I FIGURE 21. SWITCHING TEST WAVEFORMS HGTG30N60C3D Rev. B HGTG30N60C3D Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended. ©2001 Fairchild Semiconductor Corporation fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. tD(OFF)I and tD(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 21. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss during turn-off. All tail losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0). HGTG30N60C3D Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4