HGTD7N60C3S, HGTP7N60C3 Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. • 14A, 600V at TC = 25oC The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Packaging • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . . . 140ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss JEDEC TO-220AB EMITTER COLLECTOR GATE Formerly Developmental Type TA49115. Ordering Information PART NUMBER COLLECTOR (FLANGE) PACKAGE BRAND HGTD7N60C3S TO-252AA G7N60C HGTP7N60C3 TO-220AB G7N60C3 JEDEC TO-252AA NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in tape and reel, i.e. HGTD7N60C3S9A. GATE COLLECTOR (FLANGE) EMITTER Symbol C G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 ©2001 Fairchild Semiconductor Corporation HGTD7N60C3S, HGTP7N60C3 Rev. B HGTD7N60C3S, HGTP7N60C3 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC, Figure 14 . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC HGTD7N60C3S HGTP7N60C3 600 UNITS V 14 7 56 ±20 ±30 40A at 480V 60 0.48 100 -40 to 150 260 1 8 A A A V V W W/oC mJ oC oC µs µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 50Ω. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V Emitter to Collector Breakdown Voltage BVECS IC = 3mA, VGE = 0V 16 30 - V Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge ©2001 Fairchild Semiconductor Corporation ICES VCE(SAT) VCE = BVCES TC = 25oC - - 250 µA VCE = BVCES TC = 150oC - - 2.0 mA IC = IC110, VGE = 15V TC = 25oC - 1.6 2.0 V TC = 150oC - 1.9 2.4 V TC = 25oC 3.0 5.0 6.0 V - - ±250 nA VCE(PK) = 480V 40 - - A VCE(PK) = 600V 6 - - A IC = IC110, VCE = 0.5 BVCES - 8 - V IC = IC110, VCE = 0.5 BVCES VGE = 15V - 23 30 nC VGE = 20V - 30 38 nC VGE(TH) IC = 250µA, VCE = VGE IGES VGE = ±25V SSOA TJ = 150oC RG = 50Ω VGE = 15V L = 1mH VGEP QG(ON) HGTD7N60C3S, HGTP7N60C3 Rev. B HGTD7N60C3S, HGTP7N60C3 Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I TEST CONDITIONS MIN TYP MAX UNITS TJ = 150oC ICE = IC110 VCE(PK) = 0.8 BVCES VGE = 15V RG= 50Ω - 8.5 - ns - 11.5 - ns - 350 400 ns L = 1.0mH - 140 275 ns µJ Current Fall Time tfI Turn-On Energy EON - 165 - Turn-Off Energy (Note 3) EOFF - 600 - µJ 2.1 oC/W Thermal Resistance RθJC - - NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTD7N60C3S and HGTP7N60C3 were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TurnOn losses include diode losses. 40 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves DUTY CYCLE <0.5%, VCE = 10V 35 PULSE DURATION = 250µs 30 25 TC = 150oC 20 TC = 25oC 15 TC = -40oC 10 5 0 4 6 8 10 12 40 PULSE DURATION = 250 µs, 35 DUTY CYCLE <0.5%, TC = 25oC 30 20 9.0V 15 8.5V 10 8.0V 7.5V 5 7.0V 0 0 14 2 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) PULSE DURATION = 250µs 35 DUTY CYCLE <0.5%, VGE = 10V 30 TC = -40oC 20 TC = 150oC TC = 25oC 5 0 0 1 2 3 4 5 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE ©2001 Fairchild Semiconductor Corporation 6 8 10 FIGURE 2. SATURATION CHARACTERISTICS 40 10 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. TRANSFER CHARACTERISTICS 15 10.0V VGE = 15.0V 25 VGE , GATE TO EMITTER VOLTAGE (V) 25 12.0V 40 PULSE DURATION = 250µs DUTY CYCLE <0.5%, VGE = 15V 35 TC = -40oC 30 TC = 25oC 25 20 TC = 150oC 15 10 5 0 0 1 2 3 4 5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE HGTD7N60C3S, HGTP7N60C3 Rev. B HGTD7N60C3S, HGTP7N60C3 ICE , DC COLLECTOR CURRENT (A) 15 VGE = 15V 12 9 6 3 0 25 50 75 100 125 12 10 150 120 ISC 8 100 6 80 4 60 tSC 2 10 11 TC , CASE TEMPERATURE (oC) td(OFF)I , TURN-OFF DELAY TIME (ns) td(ON)I , TURN-ON DELAY TIME (ns) 30 20 VGE = 10V VGE = 15V 10 5 2 5 8 11 17 14 TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V 400 350 VGE = 10V OR 15V 300 250 200 20 2 5 8 11 14 17 20 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 300 TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V 250 100 tfI , FALL TIME (ns) trI , TURN-ON RISE TIME (ns) 40 15 14 450 ICE , COLLECTOR TO EMITTER CURRENT (A) 200 13 FIGURE 6. SHORT CIRCUIT WITHSTAND TIME 500 TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V 40 12 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE TEMPERATURE 50 140 VCE = 360V, RG = 50Ω, TJ = 125oC ISC, PEAK SHORT CIRCUIT CURRENT(A) (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (µS) Typical Performance Curves VGE = 10V VGE = 15V 200 VGE = 10V or 15V 150 10 5 2 5 8 11 14 17 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT ©2001 Fairchild Semiconductor Corporation 20 100 2 5 8 11 14 17 20 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO EMITTER CURRENT HGTD7N60C3S, HGTP7N60C3 Rev. B HGTD7N60C3S, HGTP7N60C3 3000 TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V EOFF , TURN-OFF ENERGY LOSS (µJ) EON , TURN-ON ENERGY LOSS (µJ) 2000 (Continued) 1000 VGE = 10V 500 VGE = 15V 100 40 2 5 8 11 14 17 TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V 1000 VGE = 10V or 15V 500 100 20 2 ICE , COLLECTOR TO EMITTER CURRENT (A) fMAX , OPERATING FREQUENCY (kHz) TJ = 150oC, TC = 75oC RG = 50Ω, L = 1mH 100 VGE = 15V VGE = 10V fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) 10 PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RθJC 1 = 2.1oC/W 2 10 20 30 50 C, CAPACITANCE (pF) CIES 800 600 400 200 COES 0 0 5 10 15 20 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE ©2001 Fairchild Semiconductor Corporation 17 20 40 30 20 10 0 0 100 200 300 400 500 600 25 FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA VCE , COLLECTOR TO EMITTER VOLTAGE (V) FREQUENCY = 1MHz CRES 14 VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT 1000 11 TJ = 150oC, VGE = 15V, RG = 50Ω, L = 1mH ICE, COLLECTOR TO EMITTER CURRENT (A) 1200 8 FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 200 5 ICE , COLLECTOR TO EMITTER CURRENT (A) IG(REF) = 1.044mA, RL = 50Ω, TC = 25oC 600 15 12.5 500 VCE = 600V 400 10 300 7.5 5 200 VCE = 400V VCE = 200V 100 2.5 0 0 5 10 15 20 25 0 30 VGE , GATE TO EMITTER VOLTAGE (V) Typical Performance Curves QG , GATE CHARGE (nC) FIGURE 16. GATE CHARGE WAVEFORMS HGTD7N60C3S, HGTP7N60C3 Rev. B HGTD7N60C3S, HGTP7N60C3 ZθJC , NORMALIZED THERMAL RESPONSE Typical Performance Curves (Continued) 100 0.5 0.2 0.1 10-1 0.05 0.02 t1 0.01 PD DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC SINGLE PULSE 10-2 10-4 10-5 10-3 10-2 10-1 t2 101 100 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE Test Circuit and Waveform L = 1mH 90% RHRD660 10% VGE EOFF RG = 50Ω + - 90% VDD = 480V ICE 10% td(OFF)I trI tfI FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation EON VCE td(ON)I FIGURE 19. SWITCHING TEST WAVEFORMS HGTD7N60C3S, HGTP7N60C3 Rev. B HGTD7N60C3S, HGTP7N60C3 Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Figure 13 is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. tD(OFF)I and tD(ON)I are defined in Figure 19. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 19. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0). 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ©2001 Fairchild Semiconductor Corporation HGTD7N60C3S, HGTP7N60C3 Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4