HGTP3N60C3D, HGT1S3N60C3DS Data Sheet December 2001 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49113. The diode used in anti-parallel with the IGBT is the development type TA49055. Features • 6A, 600V at TC = 25oC • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 130ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Packaging JEDEC TO-220AB The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. EMITTER COLLECTOR GATE Formerly Developmental Type TA49119. COLLECTOR (FLANGE) Ordering Information PART NUMBER PACKAGE BRAND HGTP3N60C3D TO-220AB G3N60C3D HGT1S3N60C3DS TO-263AB G3N60C3D JEDEC TO-263AB NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e., HGT1S3N60C3DS9A. GATE Symbol COLLECTOR (FLANGE) EMITTER C G E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 ©2001 Fairchild Semiconductor Corporation 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 HGTP3N60C3D, HGT1S3N60C3DS Rev. B HGTP3N60C3D, HGT1S3N60C3DS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTP3N60C3D, HGT1S3N60C3DS UNITS 600 V At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 6 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 3 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 24 A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V Switching Safe Operating Area at TJ = 150oC (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA 18A at 480V Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 33 W 0.27 W/ oC Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -40 to 150 oC Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260 oC Short Circuit Withstand Time (Note 2) at VGE = 10V (Figure 6) . . . . . . . . . . . . . . . . . . . . . tSC 8 µs Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 82Ω. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA SYMBOL BVCES ICES VCE(SAT) VGE(TH) TEST CONDITIONS IC = 250µA, VGE = 0V MIN TYP MAX UNITS 600 - - V - - 250 µA VCE = BVCES TC = 25oC VCE = BVCES TC = 150oC - - 2.0 mA IC = IC110, VGE = 15V TC = 25oC - 1.65 2.0 V TC = 150oC TC = 25oC - 1.85 2.2 V 3.0 5.5 6.0 V - - ±250 nA VCE(PK) = 480V 18 - - A VCE(PK) = 600V 2 - - A IC = 250µA, VCE = VGE IGES VGE = ±25V SSOA TJ = 150oC RG = 82Ω VGE = 15V L = 1mH IC = IC110, VCE = 0.5 BVCES - 8.3 - V On-State Gate Charge QG(ON) IC = IC110, VCE = 0.5 BVCES VGE = 15V - 10.8 13.5 nC VGE = 20V - 13.8 17.3 nC Current Turn-On Delay Time td(ON)I TJ = 150oC ICE = IC110 VCE(PK) = 0.8 BVCES VGE = 15V RG = 82Ω L = 1mH - 5 - ns Gate to Emitter Plateau Voltage Current Rise Time Current Turn-Off Delay Time VGEP trI td(OFF)I - 10 - ns - 325 400 ns - 130 275 ns - 85 - µJ µJ Current Fall Time tfI Turn-On Energy EON Turn-Off Energy (Note 3) EOFF - 245 - Diode Forward Voltage VEC IEC = 3A - 2.0 2.5 V Diode Reverse Recovery Time tRR IEC = 3A, dIEC/dt = 200A/µs - 22 28 ns IEC = 1A, dIEC/dt = 200A/µs - 17 22 ns Thermal Resistance RθJC IGBT - - 3.75 oC/W Diode - - 3.0 oC/W NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTP3N60C3D and HGT1S3N60C3DS were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energ y Loss. Turn-On losses include diode losses. ©2001 Fairchild Semiconductor Corporation HGTP3N60C3D, HGT1S3N60C3DS Rev. B HGTP3N60C3D, HGT1S3N60C3DS 20 DUTY CYCLE <0.5%, VCE = 10V PULSE DURATION = 250µs 16 14 12 10 8 TC = 150oC 6 TC = 25oC TC = -40oC 4 2 0 6 4 8 10 12 14 20 PULSE DURATION = 250µs 18 DUTY CYCLE <0.5% TC = 25oC 16 14 10V VGE = 15V 12 10 8 9.0V 6 8.5V 4 8.0V 2 7.5V 0 7.0V 0 2 VGE, GATE TO EMITTER VOLTAGE (V) 14 12 TC = -40oC 8 TC = 150oC 6 TC = 25oC 4 2 0 0 1 2 3 4 5 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 16 10 PULSE DURATION = 250µs 18 DUTY CYCLE <0.5%, VGE = 15V 16 TC = 25oC 14 12 10 TC = -40oC 8 6 TC = 150oC 4 2 0 0 6 5 4 3 2 1 0 75 100 125 150 TC , CASE TEMPERATURE (oC) FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE TEMPERATURE ©2001 Fairchild Semiconductor Corporation 1 2 3 4 5 FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE tSC , SHORT CIRCUIT WITHSTAND TIME (µS) ICE , DC COLLECTOR CURRENT (A) VGE = 15V 50 10 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE 25 8 20 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 7 6 FIGURE 2. SATURATION CHARACTERISTICS PULSE DURATION = 250µs DUTY CYCLE <0.5%, VGE = 10V 18 4 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. TRANSFER CHARACTERISTICS 20 12V 14 70 VCE = 360V, RG = 82Ω, TJ = 125oC 12 60 50 10 tSC 8 40 ISC 6 30 4 20 2 10 0 10 11 12 13 14 0 15 ISC, PEAK SHORT CIRCUIT CURRENT(A) 18 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 6. SHORT CIRCUIT WITHSTAND TIME HGTP3N60C3D, HGT1S3N60C3DS Rev. B HGTP3N60C3D, HGT1S3N60C3DS Typical Performance Curves 500 TJ = 150oC, RG = 82Ω, L = 1mH, VCE(PK) = 480V td(OFF)I , TURN-OFF DELAY TIME (ns) td(ON)I , TURN-ON DELAY TIME (ns) 20 (Continued) VGE = 10V 10 VGE = 15V 3 TJ = 150oC, RG = 82Ω, L = 1mH, VCE(PK) = 480V 400 300 VGE = 15V VGE = 10V 200 1 2 3 4 5 6 7 8 1 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT 300 4 5 6 7 8 TJ = 150oC, RG = 82Ω, L = 1mH, VCE(PK) = 480V TJ = 150oC, RG = 82Ω, L = 1mH, V CE(PK) = 480V VGE = 10V tfI , FALL TIME (ns) trI , TURN-ON RISE TIME (ns) 3 FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 80 VGE = 15V 10 5 1 2 3 4 5 6 7 200 VGE = 10V or 15V 100 8 1 ICE , COLLECTOR TO EMITTER CURRENT (A) 0.5 0.8 EOFF, TURN-OFF ENERGY LOSS (mJ) 0.4 VGE = 10V 0.3 0.2 VGE = 15V 0.1 0 2 3 4 5 6 7 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT ©2001 Fairchild Semiconductor Corporation 3 4 5 6 7 8 FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO EMITTER CURRENT TJ = 150oC, RG = 82Ω, L = 1mH, VCE(PK) = 480V 1 2 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT EON , TURN-ON ENERGY LOSS (mJ) 2 ICE , COLLECTOR TO EMITTER CURRENT (A) 8 TJ = 150oC, RG = 82Ω, L = 1mH, VCE(PK) = 480V 0.7 0.6 VGE = 10V or 15V 0.5 0.4 0.3 0.2 0.1 0 1 2 3 4 5 6 7 8 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT HGTP3N60C3D, HGT1S3N60C3DS Rev. B HGTP3N60C3D, HGT1S3N60C3DS TJ = 150oC, TC = 75oC RG = 82Ω, L = 1mH 100 VGE = 15V fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RθJC = 3.75oC/W 10 1 VGE = 10V 3 2 5 4 6 20 TJ = 150oC, VGE = 15V, RG = 82Ω, L = 1mH 18 16 14 12 10 8 6 4 2 0 0 500 FREQUENCY = 1MHz C, CAPACITANCE (pF) CIES 300 200 COES 100 CRES 0 0 5 10 15 20 200 400 500 600 25 600 15 480 12 360 9 VCE = 600V VCE = 400V 240 6 VCE = 200V IG(REF) = 1.060mA 120 RL = 200Ω 3 TC = 25oC 0 0 0 2 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 6 8 10 12 14 QG , GATE CHARGE (nC) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE ZθJC , NORMALIZED THERMAL RESPONSE 300 FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT 400 100 VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V) ICE, COLLECTOR TO EMITTER CURRENT (A) VGE, GATE TO EMITTER VOLTAGE (V) fMAX , OPERATING FREQUENCY (kHz) 200 (Continued) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves FIGURE 16. GATE CHARGE WAVEFORMS 100 0.5 0.2 10-1 t1 0.1 PD 0.05 t2 0.02 0.01 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 10-1 100 101 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE ©2001 Fairchild Semiconductor Corporation HGTP3N60C3D, HGT1S3N60C3DS Rev. B HGTP3N60C3D, HGT1S3N60C3DS Typical Performance Curves (Continued) 15 30 12 tR , RECOVERY TIMES (ns) IEC , FORWARD CURRENT (A) TC = 25oC, dI EC/dt = 200A/µs 9 100oC 6 25oC 150oC 3 0 0 0.5 1.0 1.5 2.0 2.5 3.0 25 trr 20 ta 15 10 tb 5 0 0.5 3.5 1 VEC , FORWARD VOLTAGE (V) 4 IEC , FORWARD CURRENT (A) FIGURE 18. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT Test Circuit and Waveforms 90% L = 1mH RHRD460 10% VGE EON EOFF RG = 82Ω VCE + - 90% VDD = 480V ICE 10% td(OFF)I tfI trI td(ON)I FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation FIGURE 21. SWITCHING TEST WAVEFORMS HGTP3N60C3D, HGT1S3N60C3DS Rev. B HGTP3N60C3D, HGT1S3N60C3DS Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ECCOSORBD LD26 or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ©2001 Fairchild Semiconductor Corporation fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 20. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 13) and the conduction losses (P C) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 20. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (I CE = 0). HGTP3N60C3D, HGT1S3N60C3DS Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4