FJN965 FJN965 For Output Amplifier of Electronic Flash Unit • Low Collector-Emitter Saturation Voltage • High Performance at Low Supply Voltage TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings 40 Units V VCEO VEBO Collector-Emitter Voltage 20 V Emitter-Base Voltage 7 V IC Collector Current 5 A PC Collector Dissipation 0.75 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Voltage Test Condition IC=1mA, IB=0 Min. 20 Typ. Max. Units V 0.1 µA BVEBO Emitter Base Voltage IC=100µA, IC=0 ICBO Collector Cut-off Current VCB=10V, IE=0 ICEO Collector Cut-off Current VCE=10V, IB=0 1 µA IEBO Emitter Cut-off Current VEB=7V, IC=0 0.1 µA hFE1 hFE2 DC Current Gain VCE=2V, IC=0.5A VCE=2V, IC=2A VCE (sat) Collector-Emitter Saturation Voltage IC=3A, IB=0.1A fT Current Gain Band Width Product VCE=6V, IC=50mA 150 MHz Cob Collector Output Capacitance VCB=20V, IE=0, f=1MHz 23 pF ©2002 Fairchild Semiconductor Corporation 7 V 230 150 600 1 V Rev. A2, August 2002 FJN965 Typical Characteristics 14 1.8 IB=200mA IC[A], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT VCE=2V 1.6 12 1.4 10 1.2 8 o Ta=125 C 1.0 o o 25 C -40 C 0.8 6 0.6 IB=20mA 4 0.4 2 0.2 0 0 2 4 6 8 0.0 0.0 10 0.2 VCE[V], COLLECTOR-EMITTER VOLTAGE 0.4 0.6 0.8 1.0 Figure 1. Static Characteristic 10 IC=30IB VCE=2V VCE(sat)[V], SATURATION VOLTAGE o Ta=125 C o hFE, DC CURRENT GAIN Ta=25 C o Ta=-40 C 100 10 0.01 0.1 1 10 1 0.1 o Ta=125 C o 0.01 Ta=25 C o Ta=-40 C 1E-3 0.01 100 IC[A], COLLECTOR CURRENT 1 10 Figure 4. Collector-Emitter Saturation Voltage 10 100 IE=0,f=1MHZ IC=30IB Cob[pF], OUTPUT CAPACITANCE VBE(sat)[V], SATURATION VOLTAGE 0.1 IC[A], COLLECTOR CURRENT Figure 3. DC current Gain 0.1 0.01 1.4 Figure 2. Base-Emitter On Voltage 1000 1 1.2 VBE[V], BASE-EMITTER VOLTAGE 0 Ta=-40 C 0 Ta=25 C 0 Ta=125 C 80 60 40 20 0 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 5. Base-Emitter On Voltage ©2002 Fairchild Semiconductor Corporation 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 6. Collector Output Capacitance Rev. A2, August 2002 FJN965 Typical Characteristics (Continued) 1.0 100 SinglePulse o Ta=25 C 0.8 10 ICP IC [A], COLLECTORCURRENT PC [W], POWERDISSIPATION t =10ms 0.6 0.4 0.2 0.0 0 25 50 75 100 125 o Ta [ C], AMBIENTTEMPERATURE Figure 7. Power Derating ©2002 Fairchild Semiconductor Corporation 150 IC t =1s 1 0.1 0.01 0.1 1 10 100 VCE [V], SATURATIONVOLTAGE Figure 8. Forward Bias Safe Operating Area Rev. A2, August 2002 FJN965 ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 FJN965 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1