CGY 121 A GaAs MMIC Preliminary Datasheet l l l l l l l RF-in; -Vg Variable gain amplifier (MMIC-Amplifier) for mobile communication Typical Gain Control range over 50dB Positive Control Voltage 50Ω input and output matched Low power consumption Operating voltage range: 2.7 to 6 V Frequency range 800 MHz ... 2.5 GHz Vcontrol 6 RF-GND 5 4 3 2 1 Vd1 RF-GND Vd2; RF-out ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package CGY 121 A Y9S Q-62702-G66 MW-6 1) Maximum ratings Characteristics Symbol max. Value Unit Drain voltage VD 8 V Neg. supply voltage VG -8 V Pos. control voltage Vcon 4 V Channel temperature 150 °C Storage temperature range TCh Tstg -55...+150 °C Total power dissipation (TS < 81°C) 2) Ptot 550 mW Characteristics Symbol max. Value Unit Channel-soldering point (GND) RthChS 125 K/W Thermal resistance 1) Dimensions see page 9. Please care for sufficient heat dissipation on the pcb! *) Pin-out changed compared to CGY120: 180° rotation 2) Siemens Aktiengesellschaft 1 Semiconductor Group 1 23.06.98 HL HF PE GaAs1 1998-11-01 CGY 121 A Functional block diagram: VD1 (3) VD2 (1) Pin / -VG(4) Pout (1) Vcon (6) Control Circuit GND (2, 5) Pin # Name Configuration 1 VD2 / Pout Drain voltage 2nd stage / RF-0utput 2 RF-Gnd 3 VD1 4 VG / Pin 5 RF-Gnd 6 Vcontrol Positive voltage for gain control (0V....3V) Drain voltage 1st stage Negative voltage at current control circuit (-4V) / RF-Input Siemens Aktiengesellschaft 2 Semiconductor Group 2 23.06.98 HL HF PE GaAs1 1998-11-01 CGY 121 A Electrical characteristics (TA = 25°C, f = 900 MHz, Vg = -4V, RS = RL = 50 Ω unless otherwise specified) Characteristics Symbol min typ max Unit Power Gain Vd=3V; I=45mA; Vcon=3V G 17 19 - dB Input return loss Vd=3V; I=45mA; Vcon=3V RLin - 11 - dB Output return loss Vd=3V; I=45mA; Vcon=3V RLout - 10 - dB dG 48 53 - dB P1dB - 14 - dBm Gain Control Range Vcon=3 V ... 0V; Vd=3V; I=45mA 1dB gain compression Vd=3V; I=45mA; Vcon=3V Electrical characteristics (TA = 25°C ,f = 1800 MHz, Vg=-4V, RS = RL = 50 Ω unless otherwise specified) Characteristics Symbol min typ max Unit Power Gain Vd=3V; I=45mA; Vcon=3V G 15.5 17.5 - dB Input return loss Vd=3V; I=45mA; Vcon=3V RLin - 10 - dB Output return loss Vd=3V; I=45mA; Vcon=3V RLout - 8.5 - dB dG 48 53 - dB P1dB - 14 - dBm Symbol min typ max Unit Gate current (Pin 4) Vg=-4V Ig - 1.0 - mA Control current (Pin 6) Vg=-4V; Vcon=0V...3V Ic - 0.5 - mA Supply current Vg = -4V; Vcon = 3V Id - 45 - mA Gain Control Range Vcon=3 V ... 0V; Vd=3V; I=45mA 1dB gain compression Vd=3V; I=45mA; Vcon=3V DC characteristics Characteristics Siemens Aktiengesellschaft 3 Semiconductor Group 3 23.06.98 HL HF PE GaAs1 1998-11-01 CGY 121 A Application Circuit f = 900 MHz Vd R3 R2 C3 C4 L1 L2 3 Output Input 4 1 CGY121 50 Ohm C1 6 C2 2,5 50 Ohm R1 C5 Vg Vcontrol GND C1 R1 CGY 121 C5 C3 L1 R2 L2 R3 C2 C4 Siemens Aktiengesellschaft 4 Semiconductor Group 4 23.06.98 HL HF PE GaAs1 1998-11-01 CGY 121 A Parts List Frequency 900 MHz C1, C2 (Siemens Size 0603) 22 pF 0603 C3, C4 (Siemens Size 0603) 100 nF 0603 C5 (Siemens Size 0603) 47 nF 0603 L1 (Coilcraft 0805CS-150XKBC) 15 nH 0805 L2 (Coilcraft 0805CS-270XMBC) 27 nH 0805 R1 (Siemens B 54102-A1271-J60) 270 Ohm 0805 R2 (Siemens B 54102-A1120-J60) 12 Ohm 0805 R3 6.8 Ohm 0805 Application Circuit f = 1900 MHz Vd R3 R2 C3 C4 C6 L1 3 Output Input 4 1 CGY121 50 Ohm C1 6 C2 50 Ohm 2,5 R1 C5 Vg GND Siemens Aktiengesellschaft 5 Semiconductor Group 5 Vcontrol 23.06.98 HL HF PE GaAs1 1998-11-01 CGY 121 A Parts List Frequency 1900 MHz C1, C2 (Siemens size 0603) 12 pF 0603 C3, C4 (Siemens size 0603) 100 nF 0603 C5 (Siemens size 0603) 47 nF 0603 C6 (Siemens size 0603) 1.2 pF 0603 L1 (Coilcraft 0805CS-150XKBC) 15 nH 0805 R1 (Siemens B 54102-A1271-J60) 270 Ohm 0805 R2 (Siemens B 54102-A1120-J60) 12 Ohm 0805 R3 2.7 Ohm 0805 Siemens Aktiengesellschaft 6 Semiconductor Group 6 23.06.98 HL HF PE GaAs1 1998-11-01 CGY 121 A Gain vs. Vcontrol Operating Conditions : Vd=3V, Vg=-4V, f = 1.9GHz, Pin=-10dBm 30 20 Gain [dB] 10 0 -10 -20 Gain [dB] -20° C Gain [dB] +25° C -30 Gain [dB] +70° C -40 0 0,5 1 1,5 2 2,5 3 3,5 Vcontrol [V] Total Power Dissipation Ptot = f(Ts) Ptotmax in mW 700 Power Dissipation in mW 600 P totmax 81°C 500 400 300 200 100 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 Soldering Point Temperature Ts in °C Siemens Aktiengesellschaft 7 Semiconductor Group 7 23.06.98 HL HF PE GaAs1 1998-11-01 CGY 121 A Semiconductor Device Outline MW-6 Published by Siemens AG, Bereich Halbleiter, Marketing-Kommunikation, Balanstraße 73, D-81541 München. copyright Siemens AG 1997. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and cirucits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery, and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Siemens Aktiengesellschaft 8 Semiconductor Group 8 23.06.98 HL HF PE GaAs1 1998-11-01