INFINEON CGY120

CGY 120
GaAs MMIC
________________________________________________________________________________________________________
Datasheet
* Monolithic microwave IC
(MMIC-Amplifier) for mobile communication
* Variable gain amplifier for GSM/PCN
applications
* Gain Control range over 50dB
* 50Ω input and output matched
* Low power consumption
* Operating voltage range: 2.7 to 6 V
* Frequency range 800 MHz ... 2.5 GHz
ESD:
Vd1
RF-GND
5
Vd2; RF-out
4
6
3
Electrostatic discharge sensitive device,
observe handling precautions!
2
1
RF-GND
RF-in; -Vg
Type
Marking
Ordering code
(taped)
Package 1)
CGY 120
Y8
Q62702-G44
MW-6
Maximum ratings
Symbol
Drain voltage
VD
Vg, Vcon
8
V
-3
V
Channel temperature
TCh
150
°C
Storage temperature range
Tstg
-55...+150
°C
Total power dissipation (TS < 84°C) 2)
Ptot
600
mW
RthchS
< 110
K/W
Negative supply voltage
Vcontrol
Unit
Thermal resistance
Channel-soldering point (GND)
1) Dimensions see chapter Package Outlines
2) Please care for sufficient heat dissipation on the pcb!
Rev 2
Siemens Aktiengesellschaft
pg. 1/7
17.09.96
HL EH PD21/Gü
CGY 120
GaAs MMIC
________________________________________________________________________________________________________
Electrical characteristics
TA = 25°C f = 900 MHz
Characteristics
RS = RL = 50 Ω unless otherwise specified
Symbol
Power Gain
Vd=3V; I=45mA; Vcon=2V
Vd=5V; I=70mA; Vcon=2V
G
Input return loss
Vd=3V; I=45mA; Vcon=2V
Vd=5V; I=70mA; Vcon=2V
RLin
Output return loss
Vd=3V; I=45mA; Vcon=2V
Vd=5V; I=70mA; Vcon=2V
RLout
Gain Control Range
min
max
Unit
dB
-
dG
typ
22
24
dB
-
14
15
dB
-
11
11
-
50
55
-
dB
Vcon=2 V ... -2V; Vd=3V; I=45mA
1dBm gain compression
Vd=3V; I=45mA; Vcon=2V
Vd=5V; I=70mA; Vcon=2V
Electrical characteristics
TA = 25°C f = 1800 MHz
Characteristics
P1dB
RS = RL = 50 Ω unless otherwise specified
Symbol
Power Gain
Vd=3V; I=45mA; Vcon=2V
Vd=5V; I=70mA; Vcon=2V
G
Input return loss
Vd=3V; I=45mA; Vcon=2V
Vd=5V; I=70mA; Vcon=2V
RLin
Output return loss
Vd=3V; I=45mA; Vcon=2V
Vd=5V; I=70mA; Vcon=2V
RLout
Gain Control Range
dBm
14
21
min
max
Unit
dB
-
dG
typ
20
22
dB
-
10
10
dB
-
8
8
-
50
55
-
dB
Vcon=2 V ... -2V; Vd=3V; I=45mA
1dBm gain compression
Vd=3V; I=45mA; Vcon=2V
Vd=5V; I=70mA; Vcon=2V
Siemens Aktiengesellschaft
P1dB
pg. 2/7
dBm
14
20
17.09.96
HL EH PD21/Gü
CGY 120
GaAs MMIC
________________________________________________________________________________________________________
Application Circuit
f=800MHz to 2GHz
Frequency 900 MHz
L1
27 nH
L2
22 nH
C1
12 pF
C2
12 pF
C3
680 pF
C4
22 pF
C5
R1
470 Ohm
R2
510 Ohm
1.8 GHz
27 nH
22 nH
12 pF
12 pF
680 pF
22 pF
680 pF
470 Ohm
510 Ohm
C1 , C2 Siemens B37490-K5120-J62
R1 Siemens B54102-A1471-J60
L1 Coilcraft 0805CS-270XMBC
C4 Siemens B37940-K5220-J62
R2 Siemens B53102-A1511-J60
L2 Coilcraft 0805CS-220XMBC
C3 , C5 Siemens B37940-K5681-J62
For optimized device performance, Vg has to be adapted (Vg ≈ -1V...0V) to I ≈ 45mA at Vd-supply
under condition Vcontrol=+2V.
Gain vs. Vcontrol
Operating Conditions : Vd=3V, Id=45mA, Pin=-20dBm
30
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900MHz
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Gain [dB]
20
-2
-1,5
-1
-0,5
0
0,5
1
1,5
2
Vcontrol [V]
Siemens Aktiengesellschaft
pg. 3/7
17.09.96
HL EH PD21/Gü
CGY 120
GaAs MMIC
________________________________________________________________________________________________________
Test setup for measuring S-parameters
f=10MHz to 3GHz
Ref. Plane
Output
Bias Tee
Bias Tee
Ref. Plane
Input
For optimized device performance, Vg has to be adapted (Vg ≈ -1V...0V) to I ≈ 45mA at Vd-supply
under condition Vcontrol=+2V.
Siemens Aktiengesellschaft
pg. 4/7
17.09.96
HL EH PD21/Gü
CGY 120
GaAs MMIC
________________________________________________________________________________________________________
Measurement conditions: Vd=3V, Id=45mA, Vcon=2V
# GHz S MA R 50
!f GHz S11
S21
!
MAG ANG MAG ANG
0.100 0.84 -31.2 4.97 85.4
0.200 0.68 -60.8 11.53 49.2
0.300 0.51 -80.7 14.66 21.6
0.400 0.41 -96.1 16.30 1.7
0.500 0.34 -110.9 17.39 -15.1
0.600 0.29 -127.3 18.25 -30.4
0.700 0.29 -148.9 19.28 -43.7
0.800 0.24 -179.9 19.69 -60.9
0.900 0.21 146.5 19.56 -78.2
1.000 0.20 120.6 18.58 -94.5
1.100 0.23 93.7 17.31 -110.6
1.200 0.26 71.8 15.51 -125.2
1.300 0.29 55.1 13.62 -138.6
1.400 0.32 42.2 11.80 -150.5
1.500 0.35 31.4 10.12 -160.7
1.600 0.37 22.4 8.55 -170.6
1.700 0.36 13.2 7.46 -174.4
1.800 0.36 9.4
6.65 177.5
1.900 0.36 6.6
5.88 170.8
2.000 0.37 3.9
5.20 164.3
2.100 0.37 1.3
4.59 158.3
2.200 0.37 -1.2
4.13 152.9
2.300 0.37 -3.5
3.67 147.5
2.400 0.37 -5.1
3.31 142.6
2.500 0.37 -6.9
2.95 138.3
2.600 0.36 -10.0 2.74 134.1
2.700 0.35 -13.2 2.51 129.8
2.800 0.33 -14.5 2.34 124.8
2.900 0.32 -16.4 2.16 119.1
3.000 0.30 -17.9 1.97 113.8
Siemens Aktiengesellschaft
S12
MAG ANG
0.00512 155.7
0.01753 100.4
0.02396 71.8
0.02601 57.7
0.02739 51.2
0.02791 46.5
0.02873 41.7
0.02804 40.0
0.02608 40.9
0.02722 43.4
0.02705 43.1
0.02537 44.5
0.02493 49.1
0.02380 55.7
0.02389 63.9
0.02441 69.4
0.02464 79.2
0.02872 87.1
0.03307 90.8
0.03675 94.9
0.04202 97.5
0.04801 99.2
0.05315 100.8
0.05874 101.6
0.06440 101.6
0.07210 102.5
0.07855 102.5
0.08686 103.1
0.09724 102.5
0.10700 101.6
pg. 5/7
S22
MAG ANG
0.31 81.6
0.32
2.9
0.30 -45.5
0.28 -76.5
0.27 -99.4
0.27 -118.4
0.26 -141.0
0.25 -159.3
0.21 -179.2
0.18 169.0
0.16 147.5
0.14 124.4
0.12 100.0
0.12 74.7
0.12 51.9
0.14 31.2
0.12 6.7
0.12 7.1
0.13 2.5
0.14 -0.5
0.15 -2.8
0.16 -4.7
0.17 -8.1
0.17 -10.9
0.17 -12.9
0.17 -14.8
0.16 -18.7
0.15 -20.6
0.15 -21.5
0.15 -25.0
17.09.96
HL EH PD21/Gü
CGY 120
GaAs MMIC
________________________________________________________________________________________________________
Total Power Dissipation Ptot = f(Ts)
Siemens Aktiengesellschaft
pg. 6/7
17.09.96
HL EH PD21/Gü
CGY 120
GaAs MMIC
________________________________________________________________________________________________________
Permissible Pulse Load Ptot_max / Ptot_DC = f(t_p)
Siemens Aktiengesellschaft
pg. 7/7
17.09.96
HL EH PD21/Gü