CGY 62 GaAs MMIC ________________________________________________________________________________________________________ Datasheet * Two-stage microwave broadband amplifier IC * 50 Ω input / output * Operating voltage range: 2.7 to 5 V * High gain and output power (typ.: G=20 dB, P-1dB =17,5 dBm @ 4.5V, 1GHz ) * Frequency range 200 MHz ... 2.5 GHz IN GND 4 5 GND 6 3 Interstage 2 ESD: 1 Electrostatic discharge sensitive device, observe handling precautions! GND OUT Type Marking Ordering code (taped) Package 1) CGY 62 Y6s Q68000-A8787 MW-6 Maximum ratings Symbol Unit 6 V Channel temperature VD TCh 150 °C Storage temperature range Tstg -55...+150 °C Total power dissipation (TS < 70°C) 2) Ptot 800 mW RthChS RthJA < 100 K/W < 180 K/W Drain voltage Thermal resistance Channel-soldering point (GND) Junction-ambient 3) 1) Dimensions see chapter Package Outlines 2) Please care for sufficient heat dissipation on the pcb! 3) Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm Siemens Aktiengesellschaft pg. 1/5 15.01.96 HL EH PD 21 CGY 62 GaAs MMIC ________________________________________________________________________________________________________ Electrical characteristics TA = 25°C VD = 4,5 V RS = RL = 50 Ω unless otherwise specified Characteristics Symbol min typ max Unit Drain current ID - 130 175 mA Power Gain G f = 200 MHz to 1800 MHz f = 2500 MHz ∆G Gain flatness dB 18 - 19 15 - - 2 3.5 dB f = 200 MHz to 1800 MHz F Noise figure f = 200 MHz to 1800 MHz Input return loss f = 200 MHz to 500 MHz f = 500 MHz to 2500 MHz Output return loss f = 200 MHz to 2500 MHz Third order intercept point two-tone intermodulation test f 1= 806 MHz dB - RLin RLout 3.5 4.0 dB 10 8 15 - 10 13 - dB IP3 f2 = 810 MHz dBm - 30 - Po = -10 dBm (both carriers) Output power at 1dB gain compression P-1dB dBm - 17.5 - f = 200 MHz to 1800 MHz Siemens Aktiengesellschaft pg. 2/5 15.01.96 HL EH PD 21 CGY 62 GaAs MMIC ________________________________________________________________________________________________________ Electrical characteristics at TA = 25°C RS = RL = 50 Ω VD = 4.5 V unless otherwise specified Noise figure F=f(f) VS = 4.5V Power gain G=f(f) VS = 4.5V 24 5 G [dB] F [dB] 4 20 typ. 16 3 typ. 12 2 8 1 4 0 0 0.1 0.6 1.1 1.6 2.1 0.1 2.6 1.1 1.6 2.1 2.6 f [GHz] f [GHz] Siemens Aktiengesellschaft 0.6 pg. 3/5 15.01.96 HL EH PD 21 CGY 62 GaAs MMIC ________________________________________________________________________________________________________ Typical S-Parameters ( VD = 4.5 V f/GHz 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 S11 Zo = 50 Ω ) VG = 0 V MAG ANG MAG S21 ANG MAG ANG S22 MAG ANG 0.81 0.41 0.28 0.21 0.17 0.13 0.11 0.08 0.06 0.04 0.03 0.05 0.07 0.09 0.11 0.14 0.16 0.18 0.18 0.19 -42 -84 -105 -118 -124 -128 -129 -131 -134 -141 -141 -172 163 152 149 149 150 150 151 156 6.64 10.06 10.75 10.82 10.66 10.37 9.95 9.41 8.80 8.10 7.29 6.61 6.04 5.46 4.92 4.45 4.00 3.61 3.21 2.84 48 4 -19 -38 -54 -71 -86 -101 -116 -130 -143 -155 -166 -178 172 161 152 142 132 126 0.006 0.010 0.011 0.011 0.012 0.013 0.013 0.014 0.015 0.015 0.015 0.016 0.018 0.019 0.021 0.022 0.024 0.026 0.027 0.028 107.0 40.0 30.0 31.0 30.0 31.0 33.0 33.0 34.0 33.0 39.0 42.0 44.0 44.0 45.0 45.0 45.0 44.0 44.0 43.0 0.29 0.21 0.18 0.17 0.17 0.17 0.16 0.16 0.17 0.19 0.20 0.20 0.19 0.19 0.18 0.17 0.16 0.15 0.16 0.17 Siemens Aktiengesellschaft S12 pg. 4/5 -19 -31 -34 -32 -32 -29 -24 -17 -9 -2 -3 0 3 4 4 1 -4 -10 -17 -29 15.01.96 HL EH PD 21 CGY 62 GaAs MMIC ________________________________________________________________________________________________________ Application Circuit f = 800 MHz to 1800 MHz 1 nF Vs 27 nH 39 nH 3 Input 50 Ohm 100 pF Interstage 4 100 pF 1 Output 50 Ohm CGY62 OUT IN GND 2,5,6 50 Ohm Microstripline Pin assignment: Pin 1 OUT Pin 2 GND Siemens Aktiengesellschaft Pin 3 Interstage Pin 4 IN pg. 5/5 Pin 5 GND Pin 6 GND 15.01.96 HL EH PD 21