CGY 96 GaAs MMIC l l l l l l Power amplifier for GSM class 4 phones 3.2 W (35dBm) output power at 3.5 V Overall power added efficiency 50 % Fully integrated 3 stage amplifier Power ramp control Input matched to 50 ohms, simple output match ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package CGY 96 CGY 96 Q62702G63 MW 16 Maximum ratings Characteristics Symbol max. Value Unit Positive supply voltage VD 9 V Supply current ID 4 A TCh Tstg 150 °C -55...+150 °C PPulse tbd W Ptot tbd W Characteristics Symbol max. Value Unit Channel-soldering point RthChS tbd K/W Channel temperature Storage temperature Pulse peak power dissipation duty cycle 12.5%, ton=0.577ms Total power dissipation (Ts ≤ 80 °C) Ts: Temperature at soldering point Thermal Resistance Siemens Aktiengesellschaft Semiconductor Group 1 1 23.07.1998 HL HF1998-11-01 PE GaAs CGY 96 Functional block diagramm: VD1(1) Vcontrol(8) VD2(2) CGY96 Vneg(13) current control circuit VD3/RFout(4,5,6) RFin(16) GND2(17) GND1(14,15) Pin # Name 1 VD1 Drain voltage 1st stage 2 VD2 Drain voltage 2nd stage 3 n.c. - 4,5,6 VD3 / RFout 7 n.c. 8 Configuration Drain 3rd stage and RF-output - Vcontrol Control voltage for power ramping 9,10,11, 12 n.c. - 13 Vneg negative voltage for current control circuit 14,15 Gnd1 Ground pin 1st stage 16 RFin RF Input (17) GND2 Ground (backside of MW16 package) Siemens Aktiengesellschaft Semiconductor Group 2 2 23.07.1998 HL HF1998-11-01 PE GaAs CGY 96 Electrical characteristics (TA = 25°C, Vneg=-5V, Vcontrol=2.2V; duty cycle 12.5%, ton=577µsec) Characteristics Frequency range Supply current Pin=0dBm Supply current neg. voltage gener. Vaux=3.5V Gain (small signal) Power gain Pin=0dBm Output Power Pin=0dBm, Vcontrol=2.0V.....2.5V) Overall Power added Efficiency Pin=0dBm Dynamic range output power Vcontrol = 0.2...2.2V Harmonics Pin=0dBm Noise Power in RX (935-960MHz) Pin=0dBm, Pout=35dBm, 100kHz RBW Stability all spurious outputs < -60dBc, VSWR load, all phase angles Input VSWR Siemens Aktiengesellschaft Semiconductor Group Symbol f ID min 880 - typ 1.8 max 915 - Unit MHz A IAUX - 10 - mA G GP - 40 35 - dB dB POUT - 35 - dBm η - 50 - % - 80 - dB - -40 -43 -44 -81 - dBc dBc dBc dBm - 10 : 1 - - - 1.7 : 1 - - H(2f0) H(3f0) H(4f0) NRX 3 3 23.07.1998 HL HF1998-11-01 PE GaAs CGY 96 Output Power and PAE vs. Input Power (Vd=3.5V, Vcontrol=2.2V, f=900MHz, duty cycle 12.5%, ton=577µs) Po ut [d B m] 38 75 37 70 36 65 35 60 34 55 33 50 32 45 31 40 PA E 35 [% 30 ] 30 29 28 25 Pout [dBm] 27 20 PAE [%] 26 15 25 10 24 5 23 0 -16 -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 Pin [dBm] 40 100 30 90 20 80 10 70 0 60 -10 50 -20 40 -30 30 Pout [dBm] -40 PAE [%] Pout [dBm] Output Power and PAE vs. Control Voltage: (Vd=3.5V, Pin=0dBm, f=900MHz, duty cycle 12.5%, ton=577µs) 20 PAE [%] -50 10 -60 0 0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 1,8 2 2,2 2,4 2,6 2,8 3 Vcontrol [V] Siemens Aktiengesellschaft Semiconductor Group 4 4 23.07.1998 HL HF1998-11-01 PE GaAs CGY 96 Power Gain and Input Return Loss vs. Frequency (Vd=3.5V, Vcontrol=2.2V, Pin=5dBm, duty cycle 12.5%, ton=577µs) 35,0 34,0 Powergain [dB] 33,0 32,0 31,0 30,0 29,0 28,0 27,0 26,0 25,0 0,880 0,885 0,890 0,895 0,900 0,905 0,910 0,915 0,905 0,910 0,915 Freq [GHz] -10,0 -10,5 Input Return Loss [dB] -11,0 -11,5 -12,0 -12,5 -13,0 -13,5 -14,0 -14,5 -15,0 0,880 0,885 0,890 0,895 0,900 Freq [GHz] Siemens Aktiengesellschaft Semiconductor Group 5 5 23.07.1998 HL HF1998-11-01 PE GaAs CGY 96 Output Power vs. Drain Voltage (matched for VD=3.5V, Vcontrol=2.2V, Pin=0dBm, duty cycle 12.5%, ton=577µs) 40 39 38 Pot [dBm] 37 36 35 34 33 32 31 30 2,2 2,4 2,6 2,8 3,0 3,2 3,4 3,6 3,8 4,0 4,2 4,4 4,6 4,8 5,0 5,2 VD [V] Output Power at different Temperatures (Vd=3.5V, Vcontrol=2.2V, f=900MHz, duty cycle 12.5%, ton=577µs) 36,0 35,5 35,0 -20°C 34,5 +20°C 34,0 +70°C 33,5 Pout [dBm] 33,0 32,5 32,0 31,5 31,0 30,5 30,0 29,5 29,0 28,5 28,0 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 Pin [dBm] Siemens Aktiengesellschaft Semiconductor Group 6 6 23.07.1998 HL HF1998-11-01 PE GaAs CGY 96 PAE at different Temperatures (Vd=3.5V, Vcontrol=2.2V, f=900MHz, duty cycle 12.5%, ton=577µs) 55 50 -20°C 45 +20°C +70°C 40 PAE [%] 35 30 25 20 15 10 5 0 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 Pin [dBm] Siemens Aktiengesellschaft Semiconductor Group 7 7 23.07.1998 HL HF1998-11-01 PE GaAs CGY 96 CGY 96 Evaluation Board R11 C14 R12 C11 T1 L11 C13 C12 CLK D1 C3 C G Y96 Vcon Vaux C4 L3 C2 L1 L2 C1 C5 R1 (Size 34mm x 27mm) Connections: • • • • Vd Vaux Vcontrol CLK 2.7 to 6VDC, pulsed (GSM: 12,5% duty cycle, ton=0.577ms) 2.7 to 6VDC 0.2 to 2.2 VDC (0.2V: min Pout, 2.2V: max Pout) 5 MHz to 15 MHz (with a 10uH inductor) or 150 kHz to 250 kHz (with a 100uH inductor instaed of the 10uH) (rectangular signal, 50% duty, 0 Volt to Vd voltage level) Power on sequence: 1. continuous clock (CLK) on 2. turn on Vaux ==> check negative voltage at pin#13 (-5......-10V) 3. turn on Vcontrol (may be at the same time as 2) turn on Drainvoltage Vd turn on Input Power Operation without using the negative voltage generator: Operation without using the on board negative voltage generator is possible. In that case apply -5....-8 V directly at pin#13 (Vneg-Pin). The decvices in front of pin 13 are not necessary in that case. Siemens Aktiengesellschaft Semiconductor Group 8 8 23.07.1998 HL HF1998-11-01 PE GaAs CGY 96 Vaux R11 C14 CLK C11 L11 (Vneg) C12 D1.2 T1 D1.1 C13 R12 Vcontrol Vd C5 Vcon L3 RFout CGY96 RFout Vneg RFout C3 RF OUT C4 GND1 RF IN GND1 VD2 RFin VD1 C2 L2 L1 R1 C1 Part List: CGY96 L1 L2 L3 C1 C2 C3 C4 C5 R1 33nH 33nH 33nH* 1nF 12pF 10pF** 2.2pF** 1nF 3.3Ohm Negative Voltage Generator D1 BAS40-04W T1 BC848B L11 10uH C11 1nF C12 1nF C13 47nF C14 1nF R11 3.8kOhm 680Ohm R12 * 33nH SMD-Inductor for drain3: Part Number BV1250 distribution by Horst David GmbH, 85375 Neufarn, Germany Phone-No ..8165/9548-0 , Fax-No ..8165/9548-28 ** for maximum efficiency use high quality capacitors for the output matching: Part Number ACCU-P0603 distribution by AVX GmbH, 85757 Karlsfeld, Germany Phone-No ..8131/9004-0 Siemens Aktiengesellschaft Semiconductor Group 9 9 23.07.1998 HL HF1998-11-01 PE GaAs CGY 96 Published by Siemens AG, Bereich Bauelemente, Vertrieb, Produkt-Information, Balanstraße 73, D-81541 München copyright Siemens AG 1996. All Rights Reserved As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Siemens Aktiengesellschaft Semiconductor Group 10 10 23.07.1998 HL HF1998-11-01 PE GaAs