INFINEON CGY98

CGY 98
GaAs MMIC
l
l
l
l
l
l
Broadband Power Amplifier [ 800..2000 Mhz ]
GSM,AMPS or PCN
Operating voltage range: 2.7 to 5.0 V
Pout = 35.0dBm at Vd=3.5V
Overall power added efficiency 55 %
Easy external matching
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
Marking
Ordering code
(taped)
Package
CGY98
t.b.d.
t.b.d.
SCT595
Maximum ratings
Characteristics
Symbol
max. Value
Unit
Positive supply voltage
VD
6
V
Supply current stage 1
ID
0.6
A
Supply current stage 2
ID
1.8
A
Channel temperature
150
°C
Storage temperature
TCh
Tstg
-55...+150
°C
Total power dissipation (Ts < 81 °C)
Ptot
2.0
W
PPulse
4.0
W
Characteristics
Symbol
max. Value
Unit
Channel-soldering point
RthChS
35
K/W
Ts: Temperature at soldering point
Pulse peak power
Thermal Resistance
Siemens Aktiengesellschaft
Semiconductor Group
1
1
12.03.1998
HL HFD1998-11-01
PE GaAs
CGY 98
Functional Block Diagram
(3)
VD1
(4)
(1)
RFout / VD2
RFin/Vg
(2,5)
(2,5)
GND
GND
Pin #
Configuration
1
RFin/VG
2
GND
RF and DC ground
3
VD1
Pos. drain voltage 1st stage
4
5
RF input power + Gate voltage
RFout/VD2 RF output power / Pos. drain voltage 2nd stage
GND
RF and DC ground
GSM-Operation
Siemens Aktiengesellschaft
Semiconductor Group
2
2
12.03.1998
HL HFD1998-11-01
PE GaAs
CGY 98
Electrical characteristics [Inside Application: PCB-Layout t.b.d.]
(TA = 25°C, ZS=ZL=50 Ohm, duty cycle 12.5%, ton=577us unless otherwise specified)
Characteristics
Frequenzy range
Supply current
VD=3.5V; Pin = +12 dBm
Power Gain
VD=3.5V; Pin = +12 dBm
Output Power
VD=3.5V; Pin = +12 dBm
Overall Power added Efficiency
VD=3.5V; Pin = +12 dBm
Harmonics
2f0
3f0
Input VSWR
VD=3.5V or Vd=4.8V
Load mismatch
Pin=10dBm , VD≤4.6V , ZS=50 Ohm,
Load VSWR = 20:1 for all phase,
Stability
Pin=10dBm, VD=4.6V, ZS=50 Ohm,
Load VSWR = 3:1 for all phase
Siemens Aktiengesellschaft
Semiconductor Group
Symbol
min
typ
max
Unit
f
880
-
1.6
915
-
MHz
A
IDD
G
23
dB
Po
35.0
dBm
PAE
55
-
%
-
dBc
-
-
-42
-42
-
-
2:1
No module damage
for 10 sec.
-
All spurious output
more than 70 dB below
desired signal level
3
3
12.03.1998
HL HFD1998-11-01
PE GaAs
CGY 98
PCN(DCS1800)-Operation
Electrical characteristics [Inside Application: PCB-Layout t.b.d.]
(TA = 25°C, ZS=ZL=50 Ohm, duty cycle 12.5%, ton=577us unless otherwise specified)
Characteristics
Frequenzy range
Supply current
VD=3.5V; Pin = +15 dBm
Power Gain
VD=3.5V; Pin = +15 dBm
Output Power
VD=3.5V; Pin = +15 dBm
Overall Power added Efficiency
VD=3.5V; Pin = +15 dBm
Harmonics
2f0
3f0
Input VSWR
VD=3.5V or Vd=4.8V
Load mismatch
Pin=10dBm , VD≤4.6V , ZS=50 Ohm,
Load VSWR = 20:1 for all phase,
Stability
Pin=10dBm, VD=4.6V, ZS=50 Ohm,
Load VSWR = 3:1 for all phase
Siemens Aktiengesellschaft
Semiconductor Group
Symbol
min
f
1710
-
IDD
typ
max
Unit
1.6
1785
-
MHz
A
G
19
dB
Po
34.0
dBm
PAE
45
-
%
-
dBc
-
-
-42
-42
-
-
2:1
No module damage
for 10 sec.
-
All spurious output
more than 70 dB below
desired signal level
4
4
12.03.1998
HL HFD1998-11-01
PE GaAs
CGY 98
Published by Siemens AG, Bereich Halbleiter, Marketing-Kommunikation,
Balanstraße 73, D-81541 München.
copyright Siemens AG 1996. All Rights Reserved.
As far as patents or other rights of third parties are concerned, liability is only assumed for
components per se, not for applications, processes and cirucits implemented within
components or assemblies.
The information describes the type of component and shall not be considered as assured
characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery, and prices please contact the Offices of
Semiconductor Group in Germany or the Siemens Companies and Representatives
worldwide (see address list).
Due to technical requirements components may contain dangerous substances. For
information on the type in question please contact your nearest Siemens Office,
Semiconductor Group.
Siemens AG is an approved CECC manufacturer.
Siemens Aktiengesellschaft
Semiconductor Group
5
5
12.03.1998
HL HFD1998-11-01
PE GaAs