INFINEON FOA11002A1

P R O D U C T
B R I E F
Semiconductor Solutions for
High Speed Communication
and Fiber Optic Applications
The FOA11002A1 is the industry's lowest power
consuming STM64/OC-192 Transimpedance Amplifier
for SDH/SONET systems in Silicon Germanium technology. This new device is a key component for future high
speed optical communication systems for regional, metropolitan and backbone transport data networks at the
highest speeds up to 10.7 Gbit/s over one single fiber.
It is a member of the complete 10 Gbit/s chipset in the
Silicon Germanium technology.
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FOA11002A1
Typical Applications
Features
Input sensitivity: -18.0 dBm
electrical at BER = 10 -12
Transimpedance: 6 k Ω
Overload: 0 dBm electrical
Single power supply: +5 V
Low power consumption:
170 mW
Internal DC compensation
loop increases dynamic
range
Internal bias generation for
PIN photo diode including
low-pass filter
Operates with PIN photo
diode or APD
Monitor output for mirrored
photodiode current
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Fiber optics telecom and
datacom applications
SONET/SDH OC-192/STM-64
with and without FEC
Preamplifier modules
Optical receiver modules
Main Advantages
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Packing
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Data rate from 9.95 Gbit to
10.7 Gbit/s up to 10.7 Gbit/s
Input sensitivity:
- 18.0 dBm at BER = 10-12
Transimpedance: 6 k Ω
High overload: 1.5 mA pp
maximum input current
Single power supply: +5 V
Low power consumption:
170 mW
Internal DC compensation
loop increases dynamic
range
Type
Sales Code
Package
TIA
FOA11002A
Bare die
Internal bias generation for
PIN photo diode including
low-pass filter
Operates with PIN photo
diode or APD
Monitor output for mirrored
photodiode current
Few external components
necessary
Small chip size of
0.97 x 0.97 mm
(available as bare die)
F O A 1 1 0 0 2 A 1
Tra nsi m p e d a n ce A m pl i f i e r
T I A 9 .9 5 - 1 0 . 7 G b i t / s , 5 . 0 V
N e v e r
s t o p
t h i n k i n g .
P R O D U C T
FOA11002A1
Block Diagram
R BIAS
FOA11002A1
V CC
FIL
V CC
60 Ω
CAP
60 Ω
GND
QH
QL
DC
Compensation
IN
B R I E F
V REF
MONI
Application Example
+5 V
1 kΩ
FIL
Mirrored Photo Diode Current
MONI
V CC
FO A 110 0 2 A
QH
IN
QL
50 Ω
30 nF
DataOUT+
30 nF
DataOUT50 Ω
GND
CAP
560 pF
Data
Processing
MUX+CMU
Laser Driver
FOA41001B1
FOA21002A1
Framer/
Mapper
FOAxxxx
One Chip
Transceiver
Laser 1)
10 Gbit/s
Chipset Overview
FOA6100xB1
DEMUX+CDR
CDR
TIA
FOA51001B1
FOA31002B1
FOA11002A1
PIN 1)
Optional Serial CDR
How to reach us:
http://www.infineon.com
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
81541 München
© Infineon Technologies AG 2002. All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but
not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and
conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our
Infineon Technologies Representatives worldwide.
Published by Infineon Technologies AG
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in
life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human
body, or to support and/or maintain and sustain and/or
protect human life. If they fail, it is reasonable to assume
that the health of the user or other persons may be
endangered.
Ordering No. B168-H7712-G1-X-7600
Printed in Germany
PS 1201.5
NB