MCC BC846A THRU BC848C omponents 21201 Itasca Street Chatsworth !"# $ % !"# Features NPN Small l Ideally Suited for Automatic Insertion l 150 C Junction Temperature l For Switching and AF Amplifier Applications Signal Transistor o 310mW Mechanical Data l Case: SOT-23, Molded Plastic SOT-23 l Terminals: Solderable per MIL-STD-202, Method 208 l Polarity: See Diagram A l Weight: 0.008 grams ( approx.) Type BC846A BC846B BC847A BC847B D Marking Code (Note 2) Marking Type 1A BC847C 1B BC848A 1E BC848B 1F BC848C Marking 1G 1J 1K 1L C F B E H G J Maximum Ratings @ 25oC Unless Otherwise Specified DIMENSIONS Charateristic Collector-Base Voltage Symbol Unit IC Value 80 50 30 65 45 30 6.0 5.0 100 Peak Collector Current IC M 200 mA Peak Emitter Current IEM 200 mA Pd 310 mW BC846 BC847 BC848 Collector-Emitter Voltage BC846 BC847 BC848 Emitter-Base Voltage BC846,BC847 BC848 Collector Current o Power Dissipation@T s =50 C(Note1) Operating & Storage Temperature VC B O VC E O V EBO Tj, T S T G -55~150 V V V DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE .031 .800 .035 .900 C .079 2.000 Note: 1. Package mounted on ceramic substrate 0.7mm X 2.5cm2 area. 2. Current gain subgroup “C” is not available for BC846. MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 Suggested Solder Pad Layout mA o MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 .037 .950 www.mccsemi.com .037 .950 inches mm MCC BC846A thru BC848C Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Min Typ Max Unit BC846 BC847 V(BR)CBO BC848 80 50 30 — — — — — — V IC = 10mA, IB = 0 Collector-Emitter Breakdown Voltage (Note 3) BC846 BC847 V(BR)CEO BC848 65 45 30 — — — — — — V IC = 10mA, IB = 0 6 5 — — V IE = 1mA, IC = 0 hfe hfe hfe hie hie hie hoe hoe hoe hre hre hre — — — — — — — — — — — — 220 330 600 2.7 4.5 8.7 18 30 60 1.5x10-4 2x10-4 3x10-4 — — — — — — — — — — — — — — — kW kW kW µS µS µS — — — — 110 200 420 180 290 520 220 450 800 — Thermal Resistance, Junction to Substrate Backside RqS — — 320 °C/W Note 1 Thermal Resistance, Junction to Ambient Air RqJA — — 400 °C/W Note 1 250 600 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Collector-Base Breakdown Voltage (Note 3) Emitter-Base Breakdown Voltage (Note 3) Symbol BC846 BC847 V(BR)EBO BC848 H-Parameters Small Signal Current Gain Current Gain Group A B C Input Impedance Current Gain Group A B C Output Admittance Current Gain Group A B C Reverse Voltage Transfer Ratio A Current Gain Group B C DC Current Gain Current Gain Group A B (Note 3) C Test Condition VCE = 5.0V, IC = 2.0mA, f = 1.0kHz VCE = 5.0V, IC = 2.0mA Collector-Emitter Saturation Voltage (Note 3) VCE(SAT) — 90 200 Base-Emitter Saturation Voltage (Note 3) VBE(SAT) — 700 900 — mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Voltage (Note 3) VBE(ON) 580 — 660 — 700 770 mV VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 10mA ICES ICES ICES ICBO ICBO — — — — — — — — — — 15 15 15 15 5.0 nA nA nA nA µA VCE = 80V VCE = 50V VCE = 30V VCB = 40V VCB = 30V, TA = 150°C fT 100 300 — MHz CCBO — 3.0 — pF NF — 2 10 dB Collector-Cutoff Current (Note 3) Gain Bandwidth Product Collector-Base Capacitance Noise Figure Notes: BC846 BC847 BC848 1. Package mounted on ceramic substrate 0.7mm x 2.5cm2 area. 2. Current gain subgroup “C” is not available for BC846. 3. Short duration pulse test to minimize self-heating effect. www.mccsemi.com VCE = 5.0V, IC = 10mA, f = 100MHz VCB = 10V, f = 1.0MHz VCE = 5V, IC = 200µA, RS = 2.0kW, f = 1.0kHz, Df = 200Hz