SUBMINIATURE PLASTIC SILICON PHOTOTRANSISTOR QSB363C PACKAGE DIMENSIONS EMITTER 0.276 (7.0) MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) 0.074 (1.9) .059 (1.5) .051 (1.3) .118 (3.0) .102 (2.6) 0.055 (1.4) 0.008 (0.21) 0.004 (0.11) 0.106 (2.7) 0.091 (2.3) SCHEMATIC 0.024 (0.6) COLLECTOR NOTES: 1. Dimensions are in inches (mm). 2. Tolerance of ± .010 (.25) on all non nominal dimensions unless otherwise specified. EMITTER DESCRIPTION The QSB363C is a silicon phototransistor encapsulated in a clear transparent T-3/4 package. FEATURES • NPN Silicon Phototransistor • T-3/4 (2mm) Surface Mount Package • Medium Wide Beam Angle, 24° • Clear Plastic Package • Matched Emitters: QEB363 or QEB373 • Tape & Reel Option (See Tape & Reel Specifications) • Lead Form Options: Gullwing, Yoke, Z-Bend 2001 Fairchild Semiconductor Corporation DS300233 8/2/01 1 OF 5 www.fairchildsemi.com SUBMINIATURE PLASTIC SILICON PHOTOTRANSISTOR QSB363C ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Operating Temperature Symbol Rating Unit TOPR -40 to +85 °C Storage Temperature TSTG -40 to +85 °C Soldering Temperature (Iron)(2,3,4) TSOL-I 240 for 5 sec °C (Flow)(2,3) Soldering Temperature TSOL-F 260 for 10 sec °C Collector Emitter Voltage VCE 30 V Emitter Collector Voltage VEC 5 V Power Dissipation(1) PD 100 mW NOTES 1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Pulse conditions: tp = 100 µs, T = 10 ms. 5. D = 940 nm, GaAs. ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS Peak Sensitivity Wavelength Reception Angle Dark Current Collector-Emitter Breakdown Emitter-Collector Breakdown On-State Collector Current (TA =25°C) SYMBOL MIN. TYP. MAX. UNITS DPS — 880 — nm 0 — ±12 — Deg. VCE = 10 V, Ee = 0 ID — — 100 nA IC = 1 mA BVCEO 30 — — V IE = 100 µA BVECO 4 — — V Ee = 0.5 mW/cm2 IC(on) 0.7 — — mA VCE (SAT) — — 0.4 V VCE = 5 V(5) Saturation Voltage Ee = 0.5 mW/cm2 IC = 0.1 mA(5) Rise Time VCC = 5 V, RL = 100 1 tr — 5 — µs Fall Time IC = 0.2 mA tf — 5 — µs www.fairchildsemi.com 2 OF 5 8/2/01 DS300233 SUBMINIATURE PLASTIC SILICON PHOTOTRANSISTOR QSB363C TYPICAL PERFORMANCE CURVES Fig. 2 Collector Dark Current vs. Ambient Temperature Fig. 1 Collector Power Dissipation vs. Ambient Temperature 106 5 100 Collector Dark Current (A) Collector Power Dissipation (mW) 90 80 70 60 50 40 30 20 2 107 5 2 108 5 2 109 5 10 2 1010 0 -25 0 25 50 75 85 0 100 20 VCE = 5 V Ee=1 mW/cm2 VCE = 5 V TA = 25˚ 10 Collector Current IC (mA) Relative Collector Current (%) 100 Fig. 4 Collector Current vs. Irradiance 120 100 80 60 40 20 5 2 1 0.5 0.2 0 0.1 0 10 20 30 40 50 60 0.1 70 0.2 0.5 2 1 5 10 20 Irradiance Ee (mW/cm2) Ambient Temperature TA (˚C) Fig. 5 Spectral Sensitivity Fig. 6 Collector Current vs. Collector Emitter Voltage 100 7 6 80 Collector Current IC (mA) Relative Sensitivity (%) 75 Fig. 3 Relative Collector Current vs. Ambient Temperature 140 60 40 20 0 5 4 3 2 1 0 400 500 600 700 800 900 1000 0 1100 Wavelength D(nm) 8/2/01 50 Ambient Temperature TA (˚C) 160 DS300233 25 Ambient Temperature TA (˚C) 1 2 3 4 Collector Emitter Voltage VCE (V) 3 OF 5 www.fairchildsemi.com SUBMINIATURE PLASTIC SILICON PHOTOTRANSISTOR QSB363C GULL WING LEAD CONFIGURATION FEATURES • Three lead forming options: Gull Wing, Yoke and Z-Bend 0.166 (4.2) • Compatible with automatic placement equipment • Supplied on tape and reel or in bulk packaging 0.016 (0.4) • Compatible with vapor phase reflow solder processes ANODE 0.020 (0.51) 0.087 (2.2) 0.071 (1.8) 0.074 (1.9) 0.024 (0.6) .118 (3.0) .102 (2.6) 0.078 (2.0) 0.055 (1.4) 0.043 (1.1) 0.005 (0.13) 0.106 (2.7) 0.091 (2.3) NOTES: (Applies to all package drawings) 1. Dimensions are in inches (mm). 2. Tolerance of ± .010 (.25) on all non nominal dimensions unless otherwise specified. YOKE LEAD CONFIGURATION Z-BEND LEAD CONFIGURATION 0.236 (6.0) 0.220 (5.6) 0.177 (4.5) 0.161 (4.1) 0.283 (7.2) 0.098 (2.5) 0.127 (3.25) 0.112 (2.85) 0.016 (0.4) 0.016 (0.4) ANODE 0.020 (0.5) ANODE 0.020 (0.5) 0.087 (2.2) 0.071 (1.8) 0.087 (2.2) 0.071 (1.8) 0.074 (1.9) 0.074 (1.9) 0.118 (3.0) 0.102 (2.6) 0.031 (0.8) 0.024 (0.6) 0.055 (1.4) .118 (3.0) 0.080 (2.0) .102 (2.6) 0.031 (0.8) 0.051 (1.3) 0.008 (0.2) 0.043 (1.1) 0.043 (1.1) 0.141 (3.6) www.fairchildsemi.com 0.055 (1.4) 0.106 (2.7) 0.091 (2.3) 4 OF 5 8/2/01 DS300233 SUBMINIATURE PLASTIC SILICON PHOTOTRANSISTOR QSB363C DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. DS300233 8/2/01 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 5 OF 5 www.fairchildsemi.com