HERMETIC SILICON PHOTOTRANSISTOR L14G1 L14G2 L14G3 PACKAGE DIMENSIONS 0.230 (5.84) 0.209 (5.31) 0.195 (4.95) 0.178 (4.52) 0.255 (6.47) 0.225 (5.71) 0.030 (0.76) NOM 0.500 (12.7) MIN 0.100 (2.54) 0.050 (1.27) SCHEMATIC 2 1 (CONNECTED TO CASE) COLLECTOR 3 3 0.038 (0.97) 0.046 (1.16) 0.036 (0.92) Ø0.020 (0.51) 3X 45° BASE 2 NOTES: 1 EMITTER 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. DESCRIPTION The L14G1/L14G2/L14G3 are silicon phototransistors mounted in a narrow angle, TO-18 package. FEATURES • Hermetically sealed package • Narrow reception angle 2001 Fairchild Semiconductor Corporation DS300307 6/01/01 1 OF 4 www.fairchildsemi.com HERMETIC SILICON PHOTOTRANSISTOR L14G1 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdwon Voltage Power Dissipation (TA = 25°C)(1) Power Dissipation (TC = 25°C)(2) L14G2 L14G3 (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCEO VCBO VEBO PD PD Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 45 45 5 300 600 Unit °C °C °C °C V V V mW mW NOTE: 1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient. 2. Derate power dissipation linearly 6.00 mW/°C above 25°C case. 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip 1/16” (1.6mm) minimum from housing. 6. As long as leads are not under any stress or spring tension. 7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm. 8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 3.0 mW/cm2 is approximately equivalent to a tungsten source, at 2870°K, of 10 mW/cm2. ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER Collector-Emitter Breakdown Emitter-Base Breakdown Collector-Base Breakdown Collector-Emitter Leakage Reception Angle at 1/2 Sensitivity On-State Collector Current L14G1 On-State Collector Current L14G2 On-State Collector Current L14G3 Turn-On Time Turn-Off Time Saturation Voltage www.fairchildsemi.com (TA =25°C) (All measurements made under pulse conditions) TEST CONDITIONS SYMBOL MIN IC = 10 mA, Ee = 0 IE = 100 µA, Ee = 0 IC = 100 µA, Ee = 0 VCE = 10 V, Ee = 0 BVCEO BVEBO BVCBO ICEO θ IC(ON) IC(ON) IC(ON) ton toff VCE(SAT) 45 5.0 45 — Ee = 0.5 mW/cm2, VCE = 5 V(7,8) Ee = 0.5 mW/cm2, VCE = 5 V(7,8) Ee = 0.5 mW/cm2, VCE = 5 V(7,8) IC = 2 mA, VCC = 10 V, RL =100 Ω IC = 2 mA, VCC = 10 V, RL =100 Ω IC = 1.0 mA, Ee = 3.0 mW/cm2(7,8) 2 OF 4 TYP MAX UNITS — — — 100 0.40 V V V nA Degrees mA mA mA µs µs V 6/01/01 DS300307 ±10 1.0 0.5 2.0 — 8 7 — HERMETIC SILICON PHOTOTRANSISTOR L14G1 L14G3 Figure 2. Light Current vs. Temperature Figure 1. Light Current vs. Collector to Emitter Voltage 10 IL, NORMALIZED LIGHT CURRENT 10 IL, NORMALIZED LIGHT CURRENT L14G2 Ee = 20 mW/cm2 Ee = 10 mW/cm2 1 Ee = 5 mW/cm2 Ee = 2 mW/cm2 .1 Ee = 1 mW/cm2 NORMALIZED TO: Ee = 10 mW/cm2 VCE = 5 V 1 .1 NORMALIZED TO: VCE = 5 V Ee = 10 mW/cm2 .01 .1 1 10 100 Ee - TOTAL IRRADIANCE IN mW/cm2 .01 .01 .1 1 10 100 VCE , COLLECTOR TO EMITTER VOLTAGE (V) Figure 4. Switching Times vs. Output Current ton and toff , NORMALIZED TURN ON AND TURN OFF TIMES 10 Figure 3. Normalized Light Current vs. Temperature IL, NORMALIZED LIGHT CURRENT 10 1 NORMALIZED TO: VCE = 5 V Ee = 10 mW/cm2 TA = 25°C 0.1 -50 0 50 100 RL = 1 KΩ 1 .01 150 RL = 100 Ω NORMALIZED TO: VCE = 10 V IL = 2 mA Ion = Ioff = 5 µsec RL = 100 Ω .1 RL = 10 Ω 1.0 TA, TEMPERATURE (°C) Figure 6. Normalized Light Current vs. Temperature Both Emitter (LED 55B) and Detector (L14G) at Same Temperature Figure 5. Dark Current and Temperature 1.4 105 1.2 104 IL, NORMALIZED LIGHT CURRENT ID, NORMALIZED DARK CURRENT 100 IL, OUTPUT CURRENT (mA) 106 103 102 NORMALIZED TO: ID@ 25°C VCEO = 10 V 10 1 .1 10 0 25 50 75 100 125 L14G LED 55B 1.0 .8 .6 NORMALIZED TO: LED 55B INPUT = 10 mA VCE = 10 V IL = 100 µA TA = 25°C .4 150 .2 TA, TEMPERATURE (°C) .0 55 35 15 5 25 45 65 85 105 TA, TEMPERATURE (°C) DS300307 6/01/01 3 OF 4 www.fairchildsemi.com HERMETIC SILICON PHOTOTRANSISTOR L14G1 L14G2 L14G3 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. DS300307 6/01/01 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 4 OF 4 www.fairchildsemi.com