HERMETIC SILICON PHOTODARLINGTON L14F1 L14F2 PACKAGE DIMENSIONS 0.230 (5.84) 0.209 (5.31) 0.195 (4.95) 0.178 (4.52) 0.255 (6.47) 0.225 (5.71) 0.030 (0.76) NOM 0.500 (12.7) MIN 0.100 (2.54) SCHEMATIC 0.050 (1.27) (CONNECTED TO CASE) COLLECTOR 3 2 1 3 0.038 (0.97) 0.046 (1.16) 0.036 (0.92) Ø0.020 (0.51) 3X BASE 2 45° NOTES: 1 EMITTER 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. DESCRIPTION The L14F1/L14F2 are silicon photodarlingtons mounted in a narrow angle, TO-18 package. FEATURES • Hermetically sealed package • Narrow reception angle 2001 Fairchild Semiconductor Corporation DS300306 6/01/01 1 OF 4 www.fairchildsemi.com HERMETIC SILICON PHOTODARLINGTON L14F1 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdwon Voltage Power Dissipation (TA = 25°C)(1) Power Dissipation (TC = 25°C)(2) L14F2 (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCEO VCBO VEBO PD PD Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 25 25 12 300 600 Unit °C °C °C °C V V V mW mW NOTE: 1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient. 2. Derate power dissipation linearly 6.00 mW/°C above 25°C case. 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip 1/16” (1.6mm) minimum from housing. 6. As long as leads are not under any stress or spring tension. 7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm. 8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 0.05 mW/cm2 is approximately equivalent to a tungsten source, at 2870°K, of 0.2 mW/cm2. ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER Collector-Emitter Breakdown Emitter-Base Breakdown Collector-Base Breakdown Collector-Emitter Leakage Reception Angle at 1/2 Sensitivity On-State Collector Current L14F1 On-State Collector Current L14F2 Rise Time Fall Time www.fairchildsemi.com (TA =25°C) (All measurements made under pulse conditions) TEST CONDITIONS SYMBOL MIN IC = 10 mA, Ee = 0 IE = 100 µA, Ee = 0 IC = 100 µA, Ee = 0 VCE = 12 V, Ee = 0 BVCEO BVEBO BVCBO ICEO θ IC(ON) IC(ON) tr tf 25 12 25 — Ee = .125 mW/cm2, VCE = 5 V(7) Ee = .125 mW/cm2, VCE = 5 V(7) IC = 10 mA, VCC = 5 V, RL =100 Ω IC = 10 mA, VCC = 5 V, RL =100 Ω 2 OF 4 TYP MAX UNITS — — — 100 V V V nA Degrees mA mA µs µs ±8 7.5 2.5 — 300 250 6/01/01 DS300306 HERMETIC SILICON PHOTODARLINGTON L14F1 Figure 2. Relative Light Current vs. Ambient Temperature Figure 1. Light Current vs. Collector to Emitter Voltage 5.0 mW/cm2 IL / IL @25°C, RELATIVE LIGHT CURRENT IL, NORMALIZED LIGHT CURRENT 100 2.0 1.0 10 .5 .2 1.0 .1 .05 NORMALIZED TO: VCE = 5 V Ee = .2 mW/cm2 0.1 0 5 10 15 20 25 30 10 8 6 4 2 1.0 .8 .6 .4 .2 .1 .08 .06 .04 VCE = 5 V H = .2 mW/cm2 .02 .01 -50 35 -25 0 0.9 100 0.8 90 0.7 0.6 0.5 0.4 0.3 60 50 40 30 20 10 800 900 1000 125 70 0.1 700 100 80 0.2 600 75 Figure 4. Angular Response 110 RELATIVE AMPLITUDE RELATIVE SPECTRAL RESPONSE Figure 3. Spectral Response 1.0 500 50 25 T, TEMPERATURE (°C) VCE , COLLECTOR TO EMITTER VOLTAGE (V) 0 400 L14F2 1100 0 -90° 1200 -70° -30° -50° λ, WAVE LENGTH (NANOMETERS) 10° -10° 50° 30° 70° 90° DEGREES Figure 6. Light Current vs. Relative Switching Speed 100 VCC OUTPUT PULSE INPUT LED56 10% LED td RL OUTPUT tf tr ts IL, LIGHT CURRENT (mA) 90% L14F I LOAD RESISTANCE 10 Ω 1.0 V 100 Ω 10 1000 Ω 1.0 INPUT PULSE tOFF = ts + tf tON = td + tr NORMALIZED TO: RL = 100 Ω IL = 10 mA VCC = 10 V 0.1 0.01 Figure 5. Test Circuit and Voltage Waveforms 0.1 1.0 10 100 RELATIVE SWITCHING SPEED td + tr + ts + tf DS300306 6/01/01 3 OF 4 www.fairchildsemi.com HERMETIC SILICON PHOTODARLINGTON L14F1 L14F2 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. DS300306 6/01/01 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 4 OF 4 www.fairchildsemi.com