QEB363 Subminiature Plastic Infrared Emitting Diode tm Features ■ T-3/4 (2mm) Surface Mount Package ■ Tape & Reel Option (See Tape & Reel Specifications) ■ Lead Form Options: Gullwing, Yoke, Z-Bend ■ Narrow Emission Angle, 24° ■ Wavelength = 940nm, GaAs ■ Clear Water Lens ■ Matched Photosensor: QSB363 ■ High Radiant Intensity Package Dimensions ANODE 0.276 (7.0) MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) 0.074 (1.9) Schematic .118 (3.0) .102 (2.6) .059 (1.5) .051 (1.3) 0.055 (1.4) 0.008 (0.21) 0.004 (0.11) 0.106 (2.7) 0.091 (2.3) ANODE 0.024 (0.6) Notes: 1. Dimensions are in inches (mm). 2. Tolerance of ±.010 (.25) on all non nominal dimensions unless otherwise specified. ©2002 Fairchild Semiconductor Corporation QEB363 Rev. 1.0.0 www.fairchildsemi.com QEB363 Subminiature Plastic Infrared Emitting Diode September 2006 Symbol Parameter TOPR Operating Temperature TSTG Storage Temperature Rating Unit -40 to +100 °C -40 to +100 °C TSOL-I Soldering Temperature (Iron)(2,3,4) 240 for 5 sec °C TSOL-F Soldering Temperature (Flow)(2,3) 260 for 10 sec °C IF Continuous Forward Current 50 mA VR Reverse Voltage 5 V 100 mW PD Power Dissipation(1) Notes: 1. Derate power dissipation linearly 1.33mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6mm) minimum from housing. Electrical/Optical Characteristics (TA = 25°C) Symbol Parameter Test Conditions Min. Typ. Max. Units λP Peak Emission Wavelength IF = 100mA 940 nm Θ Emission Angle IF = 100mA ±12 ° VF Forward Voltage IF = 100mA, tp = 20ms 1.6 V IR Reverse Current VR = 5V 100 µA Ie Radiant Intensity IF = 100mA, tp = 20ms tr Rise Time IF = 100mA 1 µs tf Fall Time tp = 20ms 1 µs ©2002 Fairchild Semiconductor Corporation QEB363 Rev. 1.0.0 8 mW/sr www.fairchildsemi.com 2 QEB363 Subminiature Plastic Infrared Emitting Diode Absolute Maximum Ratings (TA = 25°C unless otherwise specified) Fig. 2 Relative Radiant Intensity vs. Wavelength Fig. 1 Maximum Forward Current vs. Temperature 100 IF = 20 mA TA = 25˚C Relative Radiant Intensity (%) Forward Current IF (mA) 200 160 120 80 40 0 -25 0 25 50 75 85 80 60 40 20 100 0 880 900 920 940 960 980 1000 1020 1040 Ambient Temperature TA (˚C) Wavelength λ (nm) Fig. 4 Forward Current vs. Forward Voltage 500 980 Forward Current IF (mA) Peak Emission Wavelength (nm) Fig. 3 Peak Emission Wavelength vs. Ambient Temperature 960 940 920 900 -25 0 25 50 75 200 100 50 20 10 5 2 100 1 Ambient Temperature TA (˚C) 1 1.0 1.5 2.0 2.5 3.0 3.5 Forward Voltage VF (V) Fig. 5 Relative Radiant Flux vs. Ambient Temperature 20 Fig. 6 Relative Radiant Intensity vs. Angular Displacement 10 30 5 Relative Radiant Intensity Relative Radiant Flux (%) 0.5 2 1 0.5 0.2 0.1 20 10 0 10 20 30 40 40 50 50 60 60 70 70 80 80 90 -25 0 25 50 75 0.4 0.2 0 0.2 0.4 0.6 Ambient Temperature TA (˚C) Ambient Temperature TA (˚C) ©2002 Fairchild Semiconductor Corporation QEB363 Rev. 1.0.0 90 0.6 100 www.fairchildsemi.com 3 QEB363 Subminiature Plastic Infrared Emitting Diode Typical Performance Curves Features ■ Three lead forming options: Gull Wing, Yoke and Z-Bend ■ Compatible with automatic placement equipment ■ Supplied on tape and reel or in bulk packaging ■ Compatible with vapor phase reflow solder processes Gull Wing Lead Configuration Yoke Lead Configuration 0.283 (7.2) 0.166 (4.2) 0.098 (2.5) 0.016 (0.4) 0.016 (0.4) ANODE 0.020 (0.51) ANODE 0.020 (0.5) 0.087 (2.2) 0.071 (1.8) 0.087 (2.2) 0.071 (1.8) 0.074 (1.9) 0.074 (1.9) 0.024 (0.6) .118 (3.0) .102 (2.6) 0.118 (3.0) 0.102 (2.6) 0.031 (0.8) 0.078 (2.0) 0.055 (1.4) 0.055 (1.4) 0.051 (1.3) 0.043 (1.1) 0.008 (0.2) 0.043 (1.1) 0.005 (0.13) 0.106 (2.7) 0.091 (2.3) 0.141 (3.6) Z-Bend Lead Configuration 0.236 (6.0) 0.220 (5.6) 0.177 (4.5) 0.161 (4.1) 0.127 (3.25) 0.112 (2.85) 0.016 (0.4) 0.020 (0.5) ANODE 0.087 (2.2) 0.071 (1.8) 0.074 (1.9) 0.024 (0.6) .118 (3.0) 0.080 (2.0) .102 (2.6) 0.031 (0.8) 0.055 (1.4) 0.043 (1.1) 0.106 (2.7) 0.091 (2.3) Notes: (Applies to all package drawings) 1. Dimensions are in inches (mm). 2. Tolerance of ±.010 (.25) on all non nominal dimensions unless otherwise specified. ©2002 Fairchild Semiconductor Corporation QEB363 Rev. 1.0.0 www.fairchildsemi.com 4 QEB363 Subminiature Plastic Infrared Emitting Diode Surface Mount Options for T-3/4 Package The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 ©2002 Fairchild Semiconductor Corporation QEB363 Rev. 1.0.0 www.fairchildsemi.com 5 QEB363 Subminiature Plastic Infrared Emitting Diode TRADEMARKS