IRFF420 Data Sheet March 1999 1.6A, 500V, 3.000 Ohm, N-Channel Power MOSFET • 1.6A, 500V Formerly developmental type TA17405. Ordering Information PACKAGE 1891.4 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. PART NUMBER File Number • rDS(ON) = 3.000Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol BRAND D IRFF420 TO-205AF IRFF420 NOTE: When ordering, include the entire part number. G S Packaging JEDEC TO-205AF SOURCE DRAIN (CASE) GATE 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFF420 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg IRFF420 500 500 1.6 6.5 ±20 20 0.16 210 -55 to 150 UNITS V V A A V W W/oC mJ oC 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specified Electrical Specifications MIN TYP MAX UNITS Drain to Source Breakdown Voltage PARAMETER SYMBOL BVDSS VGS = 0V, ID = 250µA (Figure 10) 500 - - V Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2.0 - 4.0 V - - 25 µA Zero-Gate Voltage Drain Current On-State Drain Current (Note 2) IDSS ID(ON) Gate to Source Leakage IGSS Drain to Source On Resistance (Note 2) rDS(ON) Forward Transconductance (Note 2) Turn-On Delay Time gfs td(ON) Rise Time tr Turn-Off Delay Time td(OFF) Fall Time tf Total Gate Charge (Gate to Source + Gate to Drain) Qg(TOT) Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS TEST CONDITIONS VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS , VGS = 0V, TJ = 125oC - - 250 µA VDS > ID(ON) x rDS(ON)MAX , VGS = 10V (Figure 7) 1.6 - - A VGS = ±20V - - ±100 nA VGS = 10V, ID = 1.0A (Figures 8, 9) - 2.5 3.000 Ω 1.5 2.5 - S VDD = 0.5 x Rated BVDSS, RG = 9.1Ω, VGS = 10V, ID ≈ 1.6A (Figures 17, 18), RL = 152Ω for VDSS = 250V, RL = 137Ω for VDSS = 225V, MOSFET Switching Times are Essentially Independent of Operating Temperature - 30 60 ns - 25 50 ns - 30 60 ns - 15 30 ns VGS = 10V, ID = 1.6A, VDS = 0.8 x Rated BVDSS, IG(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature. - 11 15 nC - 5.0 - nC - 6.0 - nC - 300 - pF - 75 - pF - 20 - pF - 5.0 - nH - 15 - nH - - 6.25 oC/W - - 175 oC/W VDS ≥ 10V, ID = 2.0A (Figure 12) VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) Internal Drain Inductance LD Measured from the Drain Lead, 5mm (0.2in) from Header to Center of Die Internal Source Inductance LS Measured from the Source Lead, 5mm (0.2in) from Header and Source Bonding Pad Modified MOSFET Symbol Showing the Internal Device Inductances D LD G LS S Thermal Resistance Junction to Case RθJC Thermal Resistance Junction to Ambient RθJA 2 Free Air Operation IRFF420 Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current ISD Pulse Source to Drain Current (Note 3) ISM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Rectifier D MIN TYP MAX UNITS - - 1.6 A - - 6.5 A G S Source to Drain Diode Voltage (Note 2) VSD TJ trr TJ QRR TJ Reverse Recovery Time Reverse Recovered Charge = 25oC, ISD = 1.6A, VGS = 0V (Figure 13) = 150oC, ISD = 1.6A, dISD/dt = 100A/µs = 150oC, ISD = 1.6A, dISD/dt = 100A/µs - - 1.4 V - 600 - ns - 3.5 - µC NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, start TJ = 25oC, L = 143.5mH, RG = 25Ω, peak IAS = 1.6A (Figures 15,16). Typical Performance Curves 2.0 ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 0 50 100 1.6 1.2 0.8 0.4 0 25 150 50 TC , CASE TEMPERATURE (oC) 75 100 125 150 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE THERMAL IMPEDANCE 2 ZθJC, NORMALIZED POWER DISSIPATION MULTIPLIER 1.2 1.0 0.5 0.2 PDM 0.1 0.1 t1 0.05 t2 0.02 0.01 0.01 10-5 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 10-4 10-3 10-2 0.1 t1, RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 3 1 10 IRFF420 Typical Performance Curves (Continued) 10 5 10µs 80µs PULSE TEST ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100µs 1ms 1.0 OPERATION IN THIS AREA IS LIMITED BY rDS(ON) 10ms 100ms 0.05 DC TC = 25oC TJ = MAX RATED 4 VGS = 7.5V VGS = 6V 3 VGS = 5.5V 2 VGS = 5V 1 0 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 1000 0 VGS = 10V 80µs PULSE TEST 5 VGS = 7V ID, DRAIN CURRENT (A) VGS = 6.5V 4 VGS = 6V 3 VGS = 5.5V 2 VGS = 5V 1 VGS = 4V 100 150 200 250 FIGURE 5. OUTPUT CHARACTERISTICS VGS = 4.5V ID, ON-STATE DRAIN CURRENT (A) 5 50 VGS = 4.5V VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA VDS > ID(ON) x rDS(ON) MAX 80µs PULSE TEST 4 3 TJ = 125oC 2 TJ = -25oC TJ = -55oC 1 0 0 0 4 8 12 16 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 20 FIGURE 6. SATURATION CHARACTERISTICS 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 FIGURE 7. TRANSFER CHARACTERISTICS 2.6 2µs PULSE TEST VGS = 10V TJ = 25oC 8 NORMALIZED DRAIN TO SOURCE ON RESISTANCE 9 rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) VGS = 6.5V VGS = 4V 0.01 1 VGS = 7V VGS = 20V 7 6 5 4 3 2.2 1.8 1.4 1.0 0.6 0.2 2 0 2 4 6 8 10 ID, DRAIN CURRENT (A) 12 14 ID = 1A VGS = 10V -40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) NOTE: Heating effect of 2µs pulse is minimal. FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 4 FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 160 IRFF420 Typical Performance Curves (Continued) 1000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD ID = 250µA 1.15 C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.25 1.05 0.95 0.85 800 600 400 CISS 200 COSS CRSS 0.75 -40 0 40 80 0 160 120 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 100 ISD, SOURCE TO DRAIN CURRENT (A) 80µs PULSE TEST 4 TJ = -50oC 3 TJ = 25oC TJ = 125oC 2 1 80µs PULSE TEST TJ = 25oC TJ = 150oC 10 TJ = 150oC TJ = 25oC 1 0 0 1 2 3 ID , DRAIN CURRENT (A) 4 0 5 FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT VGS , GATE TO SOURCE VOLTAGE (V) gfs, TRANSCONDUCTANCE (S) 5 50 1 3 2 VSD , SOURCE TO DRAIN VOLTAGE (V) FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE 20 ID = 1.6A VDS = 100V VDS = 250V VDS = 400V 15 10 5 0 0 4 8 12 16 20 Qg(TOT) , TOTAL GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 5 4 IRFF420 Test Circuits and Waveforms VDS BVDSS L tP VARY tP TO OBTAIN + RG REQUIRED PEAK IAS - VGS VDS IAS VDD VDD DUT tP 0V IAS 0 0.01Ω tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 18. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 0.2µF 50% PULSE WIDTH 10% FIGURE 17. SWITCHING TIME TEST CIRCUIT 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G IG(REF) 0 S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 19. GATE CHARGE TEST CIRCUIT 6 IG(REF) 0 FIGURE 20. GATE CHARGE WAVEFORMS IRFF420 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. 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