MITSUBISHI IGBT MODULES CM50DY-28H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C F K Q - DIA. (2 TYP.) E2 G2 F M J C2E1 E2 N C1 G1 E1 D R S - M5 THD (3 TYP.) (3 TYP.) R R H TAB#110 t=0.5 H L P E G G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 3.70 94.0 K 0.67 17.0 B 3.150±0.01 80.0±0.25 L 0.63 16.0 C 1.57 40.0 M 0.51 13.0 D 1.34 34.0 N 0.47 12.0 E 1.22 Max. 31.0 Max. P 0.28 7.0 F 0.90 23.0 Q 0.256 Dia. Dia. 6.5 G 0.85 21.5 R 0.16 4.0 H 0.79 20.0 S M5 Metric M5 J 0.71 18.0 Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM50DY-28H is a 1400V-(VCES), 50 Ampere Dual IGBT Module. Type CM Current Rating Amperes VCES Volts (x 50) 50 28 Sep.1998 MITSUBISHI IGBT MODULES CM50DY-28H MEDIUM POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM50DY-28H Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1400 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 50 Amperes ICM 100* Amperes IE 50 Amperes Peak Emitter Current** IEM 100* Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) Pc 400 Watts Mounting Torque, M5 Main Terminal – 1.47 ~ 1.96 N·m Mounting Torque, M6 Mounting – 1.96 ~ 2.94 N·m – 190 Grams Viso 2500 Vrms Collector Current (TC = 25°C) Peak Collector Current Emitter Current** (TC = 25°C) Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – Gate Leakage Current IGES VGE = VGES, VCE = 0V – Gate-Emitter Threshold Voltage VGE(th) IC = 5mA, VCE = 10V 5.0 Collector-Emitter Saturation Voltage VCE(sat) IC = 50A, VGE = 15V – IC = 50A, VGE = 15V, Tj = 150°C Total Gate Charge QG VCC = 800V, IC = 50A, VGE = 15V Emitter-Collector Voltage VEC IE = 50A, VGE = 0V Typ. Max. Units – 1.0 mA – 0.5 µA 6.5 8.0 Volts 3.1 4.2** Volts – 2.95 – Volts – 255 – nC – – 3.8 Volts Test Conditions Min. Typ. Max. Units – – 10 VGE = 0V, VCE = 10V – – ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes nF 3.5 nF 2.0 nF Reverse Transfer Capacitance Cres – – Resistive td(on) – – 100 ns Turn-on Delay Time Load Rise Time Switching Turn-off Delay Time Times Fall Time tr VCC = 800V, IC = 50A, – – 250 ns td(off) VGE1 = VGE2 = 15V, RG = 6.3Ω – – 150 ns – – 500 ns Diode Reverse Recovery Time trr tf IE = 50A, diE/dt = –100A/µs – – 300 ns Diode Reverse Recovery Charge Qrr IE = 50A, diE/dt = –100A/µs – 0.5 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.31 °C/W Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.70 °C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.075 °C/W Sep.1998 MITSUBISHI IGBT MODULES CM50DY-28H MEDIUM POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) 100 11 60 40 10 9 20 7 80 60 40 20 0 2 4 6 8 10 4 8 12 16 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 10 1 0 20 40 60 100 80 COLLECTOR-CURRENT, IC, (AMPERES) CAPACITANCE VS. VCE (TYPICAL) 102 IC = 50A 4 2 IC = 20A 8 12 16 100 1.0 20 1.5 2.0 2.5 3.0 3.5 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 104 REVERSE RECOVERY TIME, t rr, (ns) 103 td(off) tf 102 td(on) VCC = 800V VGE = ±15V RG = 6.3Ω Tj = 125°C tr 101 COLLECTOR CURRENT, IC, (AMPERES) Cies 100 Coes Cres 10-1 102 t rr 100 di/dt = -100A/µsec Tj = 25°C 101 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE Irr 101 100 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 101 102 10-2 10-1 4.0 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 101 VGE = 0V 0 4 101 10-1 102 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 6 CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) IC = 100A 100 100 2 Tj = 25°C 8 103 3 20 102 Tj = 25°C 0 VGE = 15V Tj = 25°C Tj = 125°C 4 0 0 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VCE = 10V Tj = 25°C Tj = 125°C 8 0 SWITCHING TIME, (ns) 5 12 13 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 15 Tj = 25oC VGE = 20V COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 100 80 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) IC = 50A 16 VCC = 600V VCC = 800V 12 8 4 0 0 100 200 300 400 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM50DY-28H TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 10-2 10-1 100 101 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.31°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) MEDIUM POWER SWITCHING USE INSULATED TYPE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 10-2 10-1 100 101 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.7°C/W 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) Sep.1998