MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR〉 CR10CY MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR10CY OUTLINE DRAWING Dimensions in mm 2 3 14 1 (16.2) 26 MAX 11 MAX 3 MIN φ8.7 MAX 1.9 MIN 10 MAX 19.5 MAX φ2.0 MIN M6×1 MICA WASHER φ32×φ6×t0.25 1 3 SPACER φ9×φ6.2×t1 SOLDERLESS TERMINAL 2 TELEGRAPH WIRE 1.04~2.63mm2 1 CATHODE 2 ANODE 3 GATE LOCK WASHER M6 BRASS NUT M6×1 • IT (AV) ......................................................................... 10A • VDRM ..............................................................400V/600V • IGT ..........................................................................40mA Note: Mica washer and spacer are provided only upon request. APPLICATION Inverter, DC choppers, DC static switches, pulse generator MAXIMUM RATINGS Symbol Voltage class Parameter 8 12 Unit VRRM Repetitive peak reverse voltage 400 600 V VRSM Non-repetitive peak reverse voltage 500 720 V VDRM Repetitive peak off-state voltage 400 600 V VDSM Non-repetitive peak off-state voltage 500 720 V Ratings Unit 15.5 A 10 A 60Hz sine half wave 1 full cycle, peak value, non-repetitive 200 A I2t for fusing Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 165 A2s di/dt Critical rate of rise of on-state current VD=1/2VDRM, ITM=30A, IG=0.1A, T c=25°C, f=60Hz 100 A/µs PGM Peak gate power dissipation 5.0 W PG (AV) Average gate power dissipation 0.5 W VFGM Peak gate forward voltage 10 V VRGM Peak gate reverse voltage 5 V IFGM Peak gate forward current 2 Tj Junction temperature –30 ~ +125 Tstg Storage temperature –30 ~ +125 Symbol Conditions Parameter IT (RMS) RMS on-state current IT (AV) Average on-state current Commercial frequency, sine half wave, 180°C conduction, Tc=66°C ITSM Surge on-state current I2t — Mounting torque — Weight 30 Typical value A °C °C kg·cm 2.94 N·m 8.8 g Feb.1999 MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR〉 CR10CY MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol Parameter Limits Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125°C, V RRM applied — — 4.0 mA IDRM Repetitive peak off-state current Tj=125°C, V DRM applied — — 4.0 mA VTM On-state voltage Tc=25°C, ITM=30A, Instantaneous value — — 2.5 V dv/dt Critical rate of rise of off-state voltage Tj=125°C, VD=2/3VDRM 100 — — V/µs VGT Gate trigger voltage Tj=25°C, VD=6V, IT=0.5A V VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM IGT Gate trigger current tgt tq — — 2.5 0.25 — — V Tj=25°C, VD=6V, IT=0.5A — — 40 mA Turn-on time Tj=25°C, VD =100V, IT =10A, IG=0.1A — — 10 µs Turn-off time IT=10A, VR =50V, VD =1/2VDRM, Tj =125°C, dv/dt=20V/µs — — 15 µs R th (j-c) Thermal resistance Junction to case — — 2.0 °C/W R th (c-f) Contact thermal resistance Case to fin, greased — — 0.55 °C/W MAXIMUM ON-STATE CHARACTERISTICS 103 7 5 3 2 102 7 5 3 2 Tc = 125°C 101 7 5 3 2 100 1.0 Tc = 25°C 1.5 2.0 2.5 3.0 3.5 ON-STATE VOLTAGE (V) 4.0 RATED SURGE ON-STATE CURRENT 200 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) PERFORMANCE CURVES 180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR〉 CR10CY MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) GATE VOLTAGE (V) 3 2 VFGM = 10V PGM = 5W 101 7 5 VGT = 2.5V PG(AV) = 3 2 0.5W IGT 100 IFGM = Tj = 125°C 7 2A 25°C 5 30°C 3 2 VGD = 0.25V 10–1 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 TRANSIENT THERMAL IMPEDANCE (°C/W) GATE CHARACTERISTICS 10–1 2 3 5 7 100 2.4 2.0 1.6 1.2 0.8 0.4 0 10–4 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 TIME (s) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 40 120° 90° 35 180° 60° 30 θ = 30° 25 20 15 θ 10 360° 5 0 0 2 4 6 8 RESISTIVE, INDUCTIVE LOADS 10 12 14 16 ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 CASE TEMPERATURE (°C) AVERAGE POWER DISSIPATION (W) GATE CURRENT (mA) 140 θ 120 360° 80 60 40 0 RESISTIVE, INDUCTIVE LOADS 100 80 θ = 180° 60 θ = 90° 160 160 t4 40 120 120 t3 ALUMINUM PLATE 20 PAINTED BLACK AND GREASED 0 0 1 2 3 4 5 6 7 8 9 10 AVERAGE ON-STATE CURRENT (A) 0 2 4 6 8 10 12 14 16 AVERAGE ON-STATE CURRENT (A) AVERAGE POWER DISSIPATION (W) AMBIENT TEMPERATURE (°C) 360° 120 θ = 30° 60° 90° 120° 180° 20 AVERAGE ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 NATURAL CONVECTION 140 θ RESISTIVE, INDUCTIVE LOADS 100 MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 40 35 θ 30 360° θ 180° 120° 90° RESISTIVE 60° LOADS θ = 30° 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR〉 CR10CY MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE 140 θ 120 360° θ RESISTIVE LOADS 100 80 60 40 θ = 30° 60° 90° 120° 180° 20 0 0 2 4 6 8 10 12 14 AMBIENT TEMPERATURE (°C) CASE TEMPERATURE (°C) ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 160 160 t4 120 120 t3 140 θ θ ALUMINUM PLATE PAINTED BLACK 360° 120 AND GREASED RESISTIVE 100 LOADS NATURAL 80 CONVECTION θ = 180° 60 90° 40 20 0 16 MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 40 RESISTIVE, INDUCTIVE 35 θ LOADS DC 360° 30 270° 180° 25 120° 90° 20 60° θ = 30° 15 10 5 0 0 2 4 6 8 10 12 14 20 0 0 2 4 6 8 10 12 14 16 AVERAGE ON-STATE CURRENT (A) 10 12 14 16 θ 360° 100 RESISTIVE, INDUCTIVE LOADS 80 60 θ = 30° 60° 90° 40 180° 270° DC 120° 20 0 0 2 4 6 8 10 12 14 16 AVERAGE ON-STATE CURRENT (A) TURN-OFF TIME VS. JUNCTION TEMPERATURE 100 (%) 60 θ = 180° 90° 40 8 120 100 TURN-OFF TIME (Tj=t°C) TURN-OFF TIME (Tj=125°C) AMBIENT TEMPERATURE (°C) DC 80 6 140 AVERAGE ON-STATE CURRENT (A) LOADS NATURAL CONVECTION 4 ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 16 ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 160 160 t4 120 120 t3 140 θ ALUMINUM PLATE PAINTED BLACK 360° 120 AND GREASED RESISTIVE, 100 INDUCTIVE 2 AVERAGE ON-STATE CURRENT (A) CASE TEMPERATURE (°C) AVERAGE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) 0 70 TYPICAL EXAMPLE 90 80 60 50 40 30 IT = 10A, tw = 100µs di/dt = –8A/µs VR = 50V, VD = 1/2VDRM dv/dt = 20V/µs 20 10 0 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR〉 CR10CY MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE TURN-OFF TIME VS. ON-STATE CURRENT 100 (%) 160 140 TURN-OFF TIME (I T = iA ) TURN-OFF TIME (I T = 10A ) 120 TYPICAL EXAMPLE 100 80 60 Tj = 125°C tw = 100µs di/dt = –8A/µs VR = 50V, VD = 1/2VDRM dv/dt = 20V/µs 40 20 0 0 2 4 6 8 10 12 14 16 ON-STATE CURRENT (A) Feb.1999