MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR12BM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR12BM OUTLINE DRAWING Dimensions in mm 10.5 MIN 1.5 MAX 1.3 4 ∗ 3.8 MAX 8.6 TYPE NAME VOLTAGE CLASS 3 1 2 12.5 MIN 1 0.8 0.5 2.5 2.5 1 2 3 4 • IT (AV) ......................................................................... 12A • VDRM ..............................................................400V/600V • IGT ..........................................................................30mA ∗ CATHODE ANODE GATE ANODE 4.5 2.6 Measurement point of case temperature 10.5 TO-220C APPLICATION Automatic strobe flasher MAXIMUM RATINGS Symbol Voltage class Parameter 8 12 Unit VRRM Repetitive peak reverse voltage 400 600 V VRSM Non-repetitive peak reverse voltage 500 720 V VR (DC) DC reverse voltage 320 480 V VDRM Repetitive peak off-state voltage 400 600 V VD (DC) DC off-state voltage 320 480 V Ratings Unit 18.8 A Commercial frequency, sine half wave, 180° conduction, Tc =91°C 12.0 A Surge on-state current 60Hz sine half wave 1 full cycle, peak value, non-repetitive 360 A I2t I2t Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 544 A2s PGM Peak gate power dissipation PG (AV) Average gate power dissipation VFGM Symbol Conditions Parameter IT (RMS) RMS on-state current IT (AV) Average on-state current ITSM for fusing 5 W 0.5 W Peak gate forward voltage 6 V VRGM Peak gate reverse voltage 10 V IFGM Peak gate forward current 2 Tj Junction temperature Storage temperature Tstg — Weight Typical value A –40 ~ +125 °C –40 ~ +125 °C 1.5 g Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR12BM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Parameter Symbol Limits Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125°C, V DRM applied — — 2.0 mA IDRM Repetitive peak off-state current Tj=125°C, V DRM applied — — 2.0 mA VTM On-state voltage Tc=25°C, ITM =40A — — 1.6 V VGT Gate trigger voltage Tj=25°C, VD=6V, IT=1A — — 1.5 V VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.2 — — V IGT Gate trigger current Tj=25°C, VD=6V, IT=1A — — 30 mA IH Holding current mA R th (j-c) R th (j-a) Thermal resistance Tj=25°C, VD=12V — 15 — Junction to case — — 1.2 Junction to ambient — — 70 °C/W MAXIMUM ON-STATE CHARACTERISTICS 103 7 Tc = 25°C 5 3 2 102 7 5 3 2 101 7 5 3 2 100 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT 400 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) PERFORMANCE CURVES 360 320 280 240 200 160 120 80 40 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR12BM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE VFGM = 6V 101 7 5 3 2 PGM = 5W PG(AV) = 0.5W VGT = 1.5V 100 7 5 3 2 IFGM = 2A IGT = 30mA 10–1 VGD = 0.2V 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE TRIGGER CURRENT (Tj=t°C) GATE TRIGGER CURRENT (Tj=25°C) GATE VOLTAGE (V) 3 2 100 (%) GATE CHARACTERISTICS 103 7 5 3 2 TYPICAL EXAMPLE 102 7 5 3 2 101 7 5 3 2 100 –40 –20 0 20 40 60 80 100 120 140 160 GATE CURRENT (mA) JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS GATE TRIGGER VOLTAGE (V) 1.6 1.4 ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, 1.2 DISTRIBUTION TYPICAL EXAMPLE 1.0 0.8 0.6 0.4 0.2 0 –40 –20 0 20 40 60 80 100 120 TRANSIENT THERMAL IMPEDANCE (°C/W) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 102 JUNCTION TO AMBIENT 7 5 3 2 101 7 5 3 2 100 7 5 3 2 JUNCTION TO CASE 10–1 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 TIME (s) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 64 56 θ 48 360° 120° RESISTIVE, 90° INDUCTIVE 60° LOADS 40 32 CASE TEMPERATURE (°C) AVERAGE POWER DISSIPATION (W) JUNCTION TEMPERATURE (°C) 180° θ = 30° 24 16 8 0 0 4 8 12 16 20 24 28 32 AVERAGE ON-STATE CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 RESISTIVE, INDUCTIVE 140 θ LOADS 360° 120 100 80 θ = 30° 60 90° 60° 180° 120° 40 20 0 0 2 4 6 8 10 12 14 16 AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR12BM MEDIUM POWER USE AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 140 θ 360° 120 180° RESISTIVE, 120° INDUCTIVE LOADS 90° 100 80 60 θ = 30° 40 60° 20 0 0 AVERAGE POWER DISSIPATION (W) NON-INSULATED TYPE, GLASS PASSIVATION TYPE 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 64 56 360° 100 RESISTIVE LOADS 80 θ = 30° 60 90° 180° 60° 120° 40 20 0 0 4 8 12 16 20 24 28 16 θ 0 θ 360° 8 0 4 8 12 RESISTIVE LOADS 16 20 24 28 32 140 θ 120 360° 80 θ RESISTIVE LOADS 120° 90° 60 θ = 30° 40 60° 20 0 32 180° 100 AVERAGE ON-STATE CURRENT (A) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE ON-STATE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 64 ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 56 θ 140 48 360° CASE TEMPERATURE (°C) AVERAGE POWER DISSIPATION (W) θ = 30° 24 ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 AMBIENT TEMPERATURE (°C) CASE TEMPERATURE (°C) 120 θ 60° 32 AVERAGE ON-STATE CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 θ 90° 40 AVERAGE ON-STATE CURRENT (A) 140 180° 120° 48 RESISTIVE, INDUCTIVE LOADS 40 32 24 θ = 30° 180° 270° 120° DC 90° 60° 16 8 0 0 4 8 12 16 20 24 28 32 AVERAGE ON-STATE CURRENT (A) θ 120 360° 100 RESISTIVE, INDUCTIVE LOADS 80 θ = 30° 90° 180° 60 DC 60° 120° 270° 40 20 0 0 4 8 12 16 20 24 28 32 AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR12BM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE RESISTIVE, INDUCTIVE LOADS 120 θ DC 270° 60 180° θ = 30° 40 60° 90° 120° 20 0 0 200 180 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 Tj = 125°C TYPICAL 140 EXAMPLE 120 IGT (25°C) # IGT = 10.1mA 100 # 60 40 HOLDING CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT (mA) BREAKOVER VOLTAGE (dv/dt = vV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 100 (%) AVERAGE ON-STATE CURRENT (A) 80 20 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) Ta = 25°C VD = 100V RL = 12Ω TYPICAL EXAMPLE IGT (25°C) # IGT = 11.2mA TURN-ON TIME (µs) 8.0 7.0 6.0 5.0 4.0 3.0 # 2.0 1.0 0 0 10 20 30 40 50 60 70 80 90 100 GATE CURRENT (mA) 100 (%) 10.0 #2 #1 JUNCTION TEMPERATURE (°C) REPETITIVE PEAK REVERSE VOLTAGE (Tj=t°C) REPETITIVE PEAK REVERSE VOLTAGE (Tj=25°C) TURN-ON TIME VS. GATE CURRENT TYPICAL EXAMPLE IGT (25°C) # 1 10.6mA # 2 11.6mA 100 –40 –20 0 20 40 60 80 100 120 140 160 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 9.0 TYPICAL EXAMPLE 160 360° 100 80 100 (%) 140 BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE (T j = t°C) BREAKOVER VOLTAGE (T j = 25°C) AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 200 TYPICAL EXAMPLE 180 160 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR12BM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE 104 7 TYPICAL EXAMPLE 5 3 2 tw 0.1s 103 7 5 3 2 102 7 5 3 2 101 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE CURRENT PULSE WIDTH (µs) DISCHARGING CAPACITOR CM (µF) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH MAXIMUM ALLOWABLE PEAK ON-STATE CURRENT VS. DISCHARGE CAPACITOR 800 700 Ta = 25°C REPETITIVE CYCLE T > 5s 600 500 400 300 200 CM 350V ITM 100 0 0 400 800 1200 1600 2000 PEAK ON-STATE CURRENT (A) Feb.1999