UniFETTM FDP12N50F / FDPF12N50FT tm N-Channel MOSFET 500V, 11.5A, 0.7Ω Features Description • RDS(on) = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( Typ. 21nC) • Low Crss ( Typ. 11pF) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improve dv/dt capability • RoHS compliant D G G D S TO-220 FDP Series TO-220F FDPF Series GD S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage FDP12N50F FDPF12N50FT 500 Units V ±30 V -Continuous (TC = 25oC) 11.5 11.5* 6.9 6.9* ID Drain Current -Continuous (TC = 100oC) IDM Drain Current - Pulsed EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 11.5 A EAR Repetitive Avalanche Energy (Note 1) 16.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 1) 46* A 456 (Note 3) mJ 4.5 V/ns (TC = 25oC) 165 42 W - Derate above 25oC 1.33 0.33 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL 46 (Note 2) A -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP12N50F FDPF12N50FT RθJC Thermal Resistance, Junction to Case 0.75 3.0 RθCS Thermal Resistance, Case to Sink Typ. 0.5 - RθJA Thermal Resistance, Junction to Ambient 62.5 62.5 ©2007 Fairchild Semiconductor Corporation FDP12N50F / FDPF12N50FT Rev. A1 1 Units o C/W www.fairchildsemi.com FDP12N50F / FDPF12N50FT N-Channel MOSFET December 2007 Device Marking FDP12N50F Device FDP12N50F Package TO-220 Reel Size - Tape Width - Quantity 50 FDPF12N50FT FDPF12N50FT TO-220F - - 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units 500 - - V - 0.5 - V/oC µA Off Characteristics BVDSS ∆BVDSS / ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250µA, VGS = 0V, TJ = 25oC IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V - - 10 VDS = 400V, TC = 125oC - - 100 IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±100 3.0 - 5.0 V - 0.59 0.7 Ω - 12 - S - 1050 1395 pF - 135 180 pF - 11 17 pF - 21 30 nC - 6 - nC - 9 - nC ID = 250µA, Referenced to 25oC nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250µA Static Drain to Source On Resistance VGS = 10V, ID = 6A gFS Forward Transconductance VDS = 40V, ID = 6A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 400V, ID = 11.5A VGS = 10V (Note 4, 5) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250V, ID = 11.5A RG = 25Ω (Note 4, 5) - 21 50 ns - 45 100 ns - 50 110 ns - 35 80 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 11.5 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 46 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 11.5A - - 1.5 V trr Reverse Recovery Time 134 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 11.5A dIF/dt = 100A/µs - 0.37 - µC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 6.9mH, IAS = 11.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 11.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP12N50F / FDPF12N50FT Rev. A1 2 www.fairchildsemi.com FDP12N50F / FDPF12N50FT N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 30 30 ID,Drain Current[A] 10 ID,Drain Current[A] VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 1 o 25 C *Notes: 1. 250µs Pulse Test 0.1 * Notes : 1. VDS = 20V 2. 250µs Pulse Test o 0.05 0.1 2. TC = 25 C 1 VDS,Drain-Source Voltage[V] 1 20 10 4 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 5 6 7 VGS,Gate-Source Voltage[V] 100 IS, Reverse Drain Current [A] 0.8 0.7 VGS = 10V VGS = 20V 0.6 o 150 C 10 o 25 C Notes: 1. VGS = 0V o * Note : TJ = 25 C 0.5 0 6 12 ID, Drain Current [A] 1 0.0 18 2. 250µs Pulse Test 0.5 1.0 1.5 VSD, Body Diode Forward Voltage [V] 2.0 Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 2000 10 1500 Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VGS, Gate-Source Voltage [V] Coss Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.9 RDS(on) [Ω], Drain-Source On-Resistance o 150 C * Note: 1. VGS = 0V 2. f = 1MHz 1000 500 Crss 0 0.1 VDS = 100V VDS = 250V VDS = 400V 8 6 4 2 * Note : ID = 11.5A 0 1 10 VDS, Drain-Source Voltage [V] FDP12N50F / FDPF12N50FT Rev. A1 0 30 3 4 8 12 16 Qg, Total Gate Charge [nC] 20 24 www.fairchildsemi.com FDP12N50F / FDPF12N50FT N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. Maximum Safe Operating Area - FDP12N50F 100 20µs 1.1 100µs ID, Drain Current [A] BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.0 10 DC 1 0.9 Operation in This Area is Limited by R DS(on) * Notes : 0.1 o * Notes : 1. VGS = 0V 2. ID = 250µA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0.01 200 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 9. Maximum Safe Operating Area - FDPF12N50FT Figure 10. Maximum Drain Current vs. Case Temperature 100 14 20µs 12 100µs 10 ID, Drain Current [A] ID, Drain Current [A] 1ms 10ms 1ms 10ms 1 DC Operation in This Area is Limited by R DS(on) * Notes : 0.1 10 8 6 4 o 1. TC = 25 C 2 o 2. TJ = 150 C 3. Single Pulse 0.01 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve - FDP12N50F Thermal Response [ZθJC] 3 1 0.5 0.2 0.1 0.1 PDM 0.05 t1 0.02 0.01 * Notes : Single pulse 1E-3 -5 10 FDP12N50F / FDPF12N50FT Rev. A1 t2 0.01 o 1. ZθJC(t) = 0.75 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 10 -2 -1 0 1 10 10 10 10 Rectangular Pulse Duration [sec] 4 2 10 3 10 www.fairchildsemi.com FDP12N50F / FDPF12N50FT N-Channel MOSFET Typical Performance Characteristics (Continued) FDP12N50F / FDPF12N50FT N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve - FDPF12N50FT Thermal Response [ZθJC] 5 0.5 1 0.2 0.1 PDM 0.05 0.1 t1 0.02 t2 0.01 * Notes : Single pulse o 1. ZθJC(t) = 3 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.01 -4 10 FDP12N50F / FDPF12N50FT Rev. A1 -3 10 -2 -1 0 1 10 10 10 10 Rectangular Pulse Duration [sec] 5 2 10 3 10 www.fairchildsemi.com FDP12N50F / FDPF12N50FT N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP12N50F / FDPF12N50FT Rev. A1 6 www.fairchildsemi.com FDP12N50F / FDPF12N50FT N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDP12N50F / FDPF12N50FT Rev. A1 7 www.fairchildsemi.com FDP12N50F / FDPF12N50FT N-Channel MOSFET Mechanical Dimensions TO-220 FDP12N50F / FDPF12N50FT Rev. A1 8 www.fairchildsemi.com FDP12N50F / FDPF12N50FT N-Channel MOSFET Mechanical Dimensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) 15.87 ±0.20 (1.00x45°) MAX1.47 0.80 ±0.10 ) 0° (3 9.75 ±0.30 15.80 ±0.20 6.68 ±0.20 (0.70) #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters FDP12N50F / FDPF12N50FT Rev. A1 9 www.fairchildsemi.com The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I32 10 FDP12N50F / FDPF12N50FT Rev. A1 www.fairchildsemi.com FDP12N50F / FDPF12N50FT N-Channel MOSFET TRADEMARKS