FAIRCHILD FDPF79N15

UniFET
TM
FDP79N15 / FDPF79N15
150V N-Channel MOSFET
Features
Description
•
•
•
•
•
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
79A, 150V, RDS(on) = 0.03Ω @VGS = 10 V
Low gate charge ( typical 56 nC)
Low Crss ( typical 96pF)
Fast switching
Improved dv/dt capability
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G
G DS
TO-220
FDP Series
TO-220F
GD S
FDPF Series
S
Absolute Maximum Ratings
Symbol
Parameter
FDP79N15
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
EAR
dv/dt
PD
Power Dissipation
FDPF79N15
150
(Note 1)
Unit
V
79
50
79*
50*
A
A
316
316*
A
± 30
V
(Note 2)
1669
mJ
(Note 1)
79
A
Repetitive Avalanche Energy
(Note 1)
46.3
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
(TC = 25°C)
- Derate above 25°C
463
3.7
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
38
0.3
W
W/°C
-55 to +150
°C
300
°C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDP79N15
FDPF79N15
Unit
RθJC
Thermal Resistance, Junction-to-Case
0.27
3.3
°C/W
RθCS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
©2007 Fairchild Semiconductor Corporation
FDP79N15 / FDPF79N15 Rev. B
1
www.fairchildsemi.com
FDP79N15 / FDPF79N15 150V N-Channel MOSFET
April 2007
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDP79N15
FDP79N15
TO-220
-
-
50
FDPF79N15
FDPF79N15
TO-220F
-
-
50
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA, TJ = 25°C
150
--
--
V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250μA, Referenced to 25°C
--
0.15
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 150V, VGS = 0V
VDS = 120V, TC = 125°C
---
---
1
10
μA
μA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250μA
3.0
--
5.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 39.5A
--
0.025
0.03
Ω
gFS
Forward Transconductance
VDS = 40V, ID = 39.5A
--
46
--
S
--
2620
3410
pF
--
730
950
pF
--
96
140
pF
--
50
112
ns
--
200
410
ns
--
55
120
ns
--
38
85
ns
--
56
73
nC
--
18
--
nC
--
21
--
nC
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 75V, ID = 79A
RG = 25Ω
(Note 4, 5)
VDS = 120V, ID = 79A
VGS = 10V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
79
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
316
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 79A
--
--
1.4
V
trr
Reverse Recovery Time
136
--
ns
Reverse Recovery Charge
VGS = 0V, IS = 79A
dIF/dt =100A/μs
--
Qrr
--
2.1
--
μC
(Note 4)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.357mH, IAS = 79A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 79A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDP79N15 / FDPF79N15 Rev. B
2
www.fairchildsemi.com
FDP79N15 / FDPF79N15 150V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
ID, Drain Current [A]
2
10
ID, Drain Current [A]
2
10
1
10
* Notes :
1. 250μs Pulse Test
o
o
150 C
o
25 C
1
10
o
-55 C
2. TC = 25 C
* Notes :
1. VDS = 40V
2. 250μs Pulse Test
0
10
0
-1
0
10
10
1
10
10
2
4
6
8
10
12
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.06
0.05
IDR, Reverse Drain Current [A]
RDS(ON) [Ω],Drain-Source On-Resistance
0.07
VGS = 10V
0.04
VGS = 20V
0.03
o
* Note : TJ = 25 C
0.02
2
10
o
o
150 C
1
10
25 C
* Notes :
1. VGS = 0V
2. 250μs Pulse Test
0
0
25
50
75
100
125
150
175
10
200
0.2
0.4
0.6
ID, Drain Current [A]
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
6000
5000
Coss
4000
Ciss
3000
* Note ;
1. VGS = 0 V
2000
2. f = 1 MHz
Crss
VDS = 30V
10
Crss = Cgd
VGS, Gate-Source Voltage [V]
Capacitances [pF]
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
1000
VDS = 75V
VDS = 120V
8
6
4
2
* Note : ID = 79A
0
0
-1
10
0
10
1
10
10
20
30
40
50
60
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
FDP79N15 / FDPF79N15 Rev. B
0
3
www.fairchildsemi.com
FDP79N15 / FDPF79N15 150V N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
1.1
1.0
* Notes :
1. VGS = 0 V
0.9
2. ID = 250 μA
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2.5
2.0
1.5
1.0
* Notes :
1. VGS = 10 V
0.5
2. ID = 34.5 A
0.8
-100
-50
0
50
100
150
0.0
-100
200
-50
0
o
TJ, Junction Temperature [ C]
50
100
150
200
o
TJ, Junction Temperature [ C]
Figure 9-1. Maximum Safe Operating Area
for FDP79N15
Figure 9-2. Maximum Safe Operating Area
for FDPF79N15
10 μs
100 μs
ID, Drain Current [A]
10 ms
100 ms
1
10
DC
Operation in This Area
is Limited by R DS(on)
0
10
* Notes :
o
1. TC = 25 C
-1
10
10 μs
2
10
1 ms
ID, Drain Current [A]
2
10
100 μs
1 ms
10 ms
1
10
100 ms
Operation in This Area
is Limited by R DS(on)
DC
0
10
* Notes :
-1
10
o
2. TJ = 150 C
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
3. Single Pulse
-2
10
0
1
10
-2
10
2
10
10
0
10
VDS, Drain-Source Voltage [V]
1
10
2
10
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
90
80
ID, Drain Current [A]
70
60
50
40
30
20
10
0
25
50
75
100
125
150
o
TC, Case Temperature [ C]
FDP79N15 / FDPF79N15 Rev. B
4
www.fairchildsemi.com
FDP79N15 / FDPF79N15 150V N-Channel MOSFET
Typical Performance Characteristics (Continued)
FDP79N15 / FDPF79N15 150V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FDP79N15
ZθJC(t), Thermal Response
D=0.5
-1
10
0.2
0.1
-2
10
PDM
0.05
t1
0.02
* Notes :
0
1. ZθJC(t) = 0.27 C/W Max.
0.01
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
single pulse
-5
-4
10
t2
10
-3
10
-2
10
-1
0
10
10
1
10
t1, Square Wave Pulse Duration [sec]
Figure 11-2. Transient Thermal Response Curve for FDPF79N15
ZθJC(t), Thermal Response
D=0.5
0
10
0.2
0.1
PDM
0.05
t1
-1
10
0.02
t2
* Notes :
0
1. ZθJC(t) = 3.3 C/W Max.
0.01
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
single pulse
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
t1, Square Wave Pulse Duration [sec]
FDP79N15 / FDPF79N15 Rev. B
5
www.fairchildsemi.com
FDP79N15 / FDPF79N15 150V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP79N15 / FDPF79N15 Rev. B
6
www.fairchildsemi.com
FDP79N15 / FDPF79N15 150V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDP79N15 / FDPF79N15 Rev. B
7
www.fairchildsemi.com
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.40 ±0.20
10.00 ±0.20
Dimensions in Millimeters
FDP79N15 / FDPF79N15 Rev. B
8
www.fairchildsemi.com
FDP79N15 / FDPF79N15 150V N-Channel MOSFET
Mechanical Dimensions
(Continued)
TO-220F
3.30 ±0.10
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
FDP79N15 / FDPF79N15 Rev. B
9
www.fairchildsemi.com
FDP79N15 / FDPF79N15 150V N-Channel MOSFET
Mechanical Dimensions
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IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
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SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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(a) are intended for surgical implant into the body or (b) support
or sustain life, and (c) whose failure to perform when properly
used in accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a significant
injury of the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or system,
or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to
improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only.
Rev. I25
10
FDP79N15 / FDPF79N15 Rev. B
www.fairchildsemi.com
FDP79N15 / FDPF79N15 150V N-Channel MOSFET
tm