UniFET TM FDP79N15 / FDPF79N15 150V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 79A, 150V, RDS(on) = 0.03Ω @VGS = 10 V Low gate charge ( typical 56 nC) Low Crss ( typical 96pF) Fast switching Improved dv/dt capability This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G G DS TO-220 FDP Series TO-220F GD S FDPF Series S Absolute Maximum Ratings Symbol Parameter FDP79N15 VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR dv/dt PD Power Dissipation FDPF79N15 150 (Note 1) Unit V 79 50 79* 50* A A 316 316* A ± 30 V (Note 2) 1669 mJ (Note 1) 79 A Repetitive Avalanche Energy (Note 1) 46.3 mJ Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns (TC = 25°C) - Derate above 25°C 463 3.7 TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 38 0.3 W W/°C -55 to +150 °C 300 °C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP79N15 FDPF79N15 Unit RθJC Thermal Resistance, Junction-to-Case 0.27 3.3 °C/W RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W ©2007 Fairchild Semiconductor Corporation FDP79N15 / FDPF79N15 Rev. B 1 www.fairchildsemi.com FDP79N15 / FDPF79N15 150V N-Channel MOSFET April 2007 Device Marking Device Package Reel Size Tape Width Quantity FDP79N15 FDP79N15 TO-220 - - 50 FDPF79N15 FDPF79N15 TO-220F - - 50 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 150 -- -- V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25°C -- 0.15 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 150V, VGS = 0V VDS = 120V, TC = 125°C --- --- 1 10 μA μA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 39.5A -- 0.025 0.03 Ω gFS Forward Transconductance VDS = 40V, ID = 39.5A -- 46 -- S -- 2620 3410 pF -- 730 950 pF -- 96 140 pF -- 50 112 ns -- 200 410 ns -- 55 120 ns -- 38 85 ns -- 56 73 nC -- 18 -- nC -- 21 -- nC (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 75V, ID = 79A RG = 25Ω (Note 4, 5) VDS = 120V, ID = 79A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 79 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 316 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 79A -- -- 1.4 V trr Reverse Recovery Time 136 -- ns Reverse Recovery Charge VGS = 0V, IS = 79A dIF/dt =100A/μs -- Qrr -- 2.1 -- μC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.357mH, IAS = 79A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 79A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP79N15 / FDPF79N15 Rev. B 2 www.fairchildsemi.com FDP79N15 / FDPF79N15 150V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ID, Drain Current [A] 2 10 ID, Drain Current [A] 2 10 1 10 * Notes : 1. 250μs Pulse Test o o 150 C o 25 C 1 10 o -55 C 2. TC = 25 C * Notes : 1. VDS = 40V 2. 250μs Pulse Test 0 10 0 -1 0 10 10 1 10 10 2 4 6 8 10 12 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.06 0.05 IDR, Reverse Drain Current [A] RDS(ON) [Ω],Drain-Source On-Resistance 0.07 VGS = 10V 0.04 VGS = 20V 0.03 o * Note : TJ = 25 C 0.02 2 10 o o 150 C 1 10 25 C * Notes : 1. VGS = 0V 2. 250μs Pulse Test 0 0 25 50 75 100 125 150 175 10 200 0.2 0.4 0.6 ID, Drain Current [A] 0.8 1.0 1.2 1.4 1.6 1.8 VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 12 6000 5000 Coss 4000 Ciss 3000 * Note ; 1. VGS = 0 V 2000 2. f = 1 MHz Crss VDS = 30V 10 Crss = Cgd VGS, Gate-Source Voltage [V] Capacitances [pF] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd 1000 VDS = 75V VDS = 120V 8 6 4 2 * Note : ID = 79A 0 0 -1 10 0 10 1 10 10 20 30 40 50 60 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] FDP79N15 / FDPF79N15 Rev. B 0 3 www.fairchildsemi.com FDP79N15 / FDPF79N15 150V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2. ID = 250 μA Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 0.5 2. ID = 34.5 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 o TJ, Junction Temperature [ C] 50 100 150 200 o TJ, Junction Temperature [ C] Figure 9-1. Maximum Safe Operating Area for FDP79N15 Figure 9-2. Maximum Safe Operating Area for FDPF79N15 10 μs 100 μs ID, Drain Current [A] 10 ms 100 ms 1 10 DC Operation in This Area is Limited by R DS(on) 0 10 * Notes : o 1. TC = 25 C -1 10 10 μs 2 10 1 ms ID, Drain Current [A] 2 10 100 μs 1 ms 10 ms 1 10 100 ms Operation in This Area is Limited by R DS(on) DC 0 10 * Notes : -1 10 o 2. TJ = 150 C o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 3. Single Pulse -2 10 0 1 10 -2 10 2 10 10 0 10 VDS, Drain-Source Voltage [V] 1 10 2 10 VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 90 80 ID, Drain Current [A] 70 60 50 40 30 20 10 0 25 50 75 100 125 150 o TC, Case Temperature [ C] FDP79N15 / FDPF79N15 Rev. B 4 www.fairchildsemi.com FDP79N15 / FDPF79N15 150V N-Channel MOSFET Typical Performance Characteristics (Continued) FDP79N15 / FDPF79N15 150V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve for FDP79N15 ZθJC(t), Thermal Response D=0.5 -1 10 0.2 0.1 -2 10 PDM 0.05 t1 0.02 * Notes : 0 1. ZθJC(t) = 0.27 C/W Max. 0.01 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) single pulse -5 -4 10 t2 10 -3 10 -2 10 -1 0 10 10 1 10 t1, Square Wave Pulse Duration [sec] Figure 11-2. Transient Thermal Response Curve for FDPF79N15 ZθJC(t), Thermal Response D=0.5 0 10 0.2 0.1 PDM 0.05 t1 -1 10 0.02 t2 * Notes : 0 1. ZθJC(t) = 3.3 C/W Max. 0.01 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) single pulse -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Square Wave Pulse Duration [sec] FDP79N15 / FDPF79N15 Rev. B 5 www.fairchildsemi.com FDP79N15 / FDPF79N15 150V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP79N15 / FDPF79N15 Rev. B 6 www.fairchildsemi.com FDP79N15 / FDPF79N15 150V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDP79N15 / FDPF79N15 Rev. B 7 www.fairchildsemi.com TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters FDP79N15 / FDPF79N15 Rev. B 8 www.fairchildsemi.com FDP79N15 / FDPF79N15 150V N-Channel MOSFET Mechanical Dimensions (Continued) TO-220F 3.30 ±0.10 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters FDP79N15 / FDPF79N15 Rev. B 9 www.fairchildsemi.com FDP79N15 / FDPF79N15 150V N-Channel MOSFET Mechanical Dimensions TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Across the board. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Rev. I25 10 FDP79N15 / FDPF79N15 Rev. B www.fairchildsemi.com FDP79N15 / FDPF79N15 150V N-Channel MOSFET tm