MITSUBISHI TRANSISTOR MODULES QM15KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM15KD-HB • • • • • IC Collector current .......................... 15A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 250 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders. OUTLINE DRAWING & CIRCUIT DIAGRAM 11 11 11 12.5 10.5 10.5 18.5 R6 Dimensions in mm 2–φ5.5 BuP BvP BwP K P A T S 42 W 30 V 9 18 K P U N BuN BvN BwN R 18 18 15 BuP R S T 8 93 A U BvP V BwP W BvN BwN BuN N 6.5 LABEL (23.6) 15 (24.45) 110 Tab#110, t=0.5 Tab#250, t=0.8 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM15KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Inverter part, Tj=25°C) Parameter Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 600 V VCEX Collector-emitter voltage VEB=2V 600 V VCBO Collector-base voltage Emitter open 600 V VEBO Emitter-base voltage Collector open 7 V IC Collector current DC 15 A –IC Collector reverse current DC (forward diode current) 15 A PC Collector dissipation TC=25°C 76 W IB Base current DC 1 A –ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 150 A ABSOLUTE MAXIMUM RATINGS Symbol Conditions (Converter part, Tj=25°C) Parameter Conditions Ratings Unit VRRM Repetitive peak reverse voltage 800 V VRSM Non-repetitive peak reverse voltage 900 V Ea Recommended AC input voltage 220 V IO DC output current Three phase full wave rectifying circuit, Tc=79°C 30 A IFSM Surge (non-repetitive) forward current One half cycle at 60 Hz, peak value 300 A I2t I2t for fusing Value for one cycle of surge current 375 A2s ABSOLUTE MAXIMUM RATINGS (Common) Parameter Ratings Unit Tj Junction temperature –40~150 °C Tstg Storage temperature –40~125 °C Viso Isolation voltage Symbol Conditions Charged part to case, AC for 1 minute — Mounting torque Mounting screw M5 — Weight Typical value ELECTRICAL CHARACTERISTICS Symbol 2500 V 1.47~1.96 N·m 15~20 kg·cm 125 g (Inverter part, Tj=25°C) Test conditions Parameter Limits Min. Typ. Max. Unit ICEX Collector cutoff current VCE=600V, VEB=2V — — 1.0 mA ICBO Collector cutoff current VCB=600V, Emitter open — — 1.0 mA IEBO Emitter cutoff current VEB=7V — — 40 mA VCE (sat) Collector-emitter saturation voltage — — 2.0 V VBE (sat) Base-emitter saturation voltage — — 2.5 V –VCEO Collector-emitter reverse voltage –IC=15A (diode forward voltage) — — 1.5 V hFE DC current gain IC=15A, VCE=2V 250 — — — — — 1.5 µs Switching time VCC=300V, IC=15A, IB1=90mA,–IB2=0.3A — — 10 µs — — 2.0 µs Transistor part (per 1/6 module) — — 1.65 °C/ W Diode part (per 1/6 module) — — 2.8 °C/ W Conductive grease applied — — 0.35 °C/ W IC=15A, IB=60mA ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) ELECTRICAL CHARACTERISTICS Symbol (Converter part, Tj=25°C) Parameter Test conditions Limits Min. Typ. Max. Unit IRRM Repetitive peak reverse current VR=VRRM, Tj=150°C — — 5.0 VFM Forward voltage drop IF=30A — — 1.3 V Rth (j-c) Thermal resistance Junction to case — — 0.9 °C/ W Rth (c-f) Contact thermal resistance Case to fin, conductive grease applied — — 0.35 °C/ W mA Feb.1999 MITSUBISHI TRANSISTOR MODULES QM15KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 3 2 50 DC CURRENT GAIN hFE 40 IB=0.6A 30 IB=200mA IB=60mA 20 IB=40mA 10 0 IB=20mA 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) 10 0 7 5 4 3 2 VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) VCE=2.0V Tj=25°C 10 –1 7 5 4 3 2 10 –2 1.2 1.6 2.0 2.4 2.8 BASE-EMITTER VOLTAGE 3.2 10 3 7 5 4 3 2 3 2 IC=15A 1 IC=10A 0 10 –3 2 3 5 710 –2 2 3 5 710 –1 2 3 5 7 10 0 BASE CURRENT IB (A) 2 3 4 5 7 10 2 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 IB=60mA Tj=25°C 5 Tj=125°C 4 3 2 VBE(sat) 10 0 7 5 4 3 2 VCE(sat) 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (µs) 4 2 3 4 5 7 10 1 COLLECTOR CURRENT IC (A) SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) VCE=2.0V VBE (V) Tj=25°C Tj=125°C IC=5A VCE=5.0V 10 2 7 5 4 3 10 0 COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 5 Tj=25°C Tj=125°C COLLECTOR CURRENT IC (A) SATURATION VOLTAGE COLLECTOR CURRENT IC (A) Tj=25°C 10 1 7 5 4 3 2 ts tf 10 0 7 5 4 3 2 10 –1 10 0 ton VCC=300V IB1=90mA IB2=–300mA Tj=25°C Tj=125°C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM15KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE 10 2 7 5 4 3 2 REVERSE BIAS SAFE OPERATING AREA 32 Tj=125°C VCC=300V IB1=90mA IC=15A Tj=25°C Tj=125°C COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (µs) SWITCHING TIME VS. BASE CURRENT (TYPICAL) ts 10 1 7 5 4 3 2 tf 10 0 10 –2 2 3 4 5 7 10 –1 28 BASE REVERSE CURRENT –IB2 (A) 16 12 8 4 s 0µ 50 s 1m ms 10 10 0 7 5 3 2 10 –1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 DERATING FACTOR (%) s 80 70 60 COLLECTOR DISSIPATION 50 40 30 20 10 0 0 VCE (V) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10 –3 2 3 5 710 –2 2 3 5 710 –1 2 3 5 7 10 0 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT –IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 5 710 1 2.0 TIME (s) SECOND BREAKDOWN AREA 90 0µ VCE (V) DERATING FACTOR OF F. B. S. O. A. 10 tw= COLLECTOR CURRENT IC (A) 100 200 300 400 500 600 700 800 100 COLLECTOR-EMITTER VOLTAGE Zth (j–c) (°C/ W) 0 COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 2 7 TC=25°C 5 NON-REPETITIVE 3 2 DC 10 1 7 5 3 2 IB2=–3.0A 20 0 2 3 4 5 7 10 0 IB2=–0.5A 24 10 2 7 5 4 3 2 TC (°C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Tj=25°C Tj=125°C 10 1 7 5 4 3 2 10 0 0.4 0.8 1.2 1.6 2.0 2.4 COLLECTOR-EMITTER REVERSE VOLTAGE –VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM15KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 180 160 140 120 100 80 60 40 20 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 –1 10 0 10 1 Irr 10 0 Qrr trr 2 3 4 5 7 10 1 trr (µs) 200 Irr (A), Qrr (µc) SURGE COLLECTOR REVERSE CURRENT –ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) VCC=300V IB1=90mA IB2=–300mA Tj=25°C Tj=125°C 10 –1 2 3 4 5 7 10 2 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 5 7 10 1 3.2 2.8 Zth (j–c) (°C/ W) 2.4 2.0 1.6 1.2 0.8 0.4 0 10 –3 2 3 5 7 10 –2 2 3 5 7 10 –1 2 3 5 7 10 0 TIME (s) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM15KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES (Diode parts) 10 3 7 5 3 2 500 Tj=25°C 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.8 1.2 1.6 2.0 2.4 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60HZ) MAXIMUM POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. DC OUTPUT CURRENT 160 TC (°C) RESISTIVE, INDUCTIVE LOAD 80 60 40 20 0 400 FORWARD VOLTAGE DROP VF (V) CASE TEMPERATURE POWER DISSIPATION P (W) 100 0 ALLOWABLE SURGE (NON-REPETITIVE) FORWARD CURRENT SURGE (NON-REPETITIVE) FORWARD CURRENT IFSM (A) FORWARD CURRENT IF (A) MAXIMUM FORWARD CHARACTERISTIC 8 16 24 DC OUTPUT CURRENT 32 IO (A) 40 RESISTIVE, INDUCTIVE LOAD 140 120 100 80 60 0 8 16 24 DC OUTPUT CURRENT 32 40 IO (A) Feb.1999